SAE GEIA-STD-0008-2011 Derating of Electronic Components (Formerly TechAmerica GEIA-STD-0008).pdf

1、 TechAmerica Standard Derating of Electronic Components GEIA-STD-0008 August 2011 GEIA-STD-0008 ANSI/GEIA STD-0008-2012 Approved: Feb 9, 2012 NOTICE TechAmerica Engineering Standards and Publications are designed to serve the public interest by eliminating misunderstandings between manufacturers and

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5、ublication. This TechAmerica Standard is considered to have International Standardization implications, but the ISO/IEC activity has not progressed to the point where a valid comparison between the TechAmerica Standard and the ISO/IEC document can be made. This Standard does not purport to address a

6、ll safety problems associated with its use or all applicable regulatory requirements. It is the responsibility of the user of this Standard to establish appropriate safety and health practices and to determine the applicability of regulatory limitations before its use. (Formulated under the cognizan

7、ce of the TechAmerica G-12 Solid State Devices Committee.) This document is maintained under the ANSI/TechAmerica continuous maintenance program. Changes may be submitted at any time on any part of the standard using the TechAmerica Document Improvement Proposal at the back of this document or a sim

8、ilar method containing the same information. These comments shall be acted on for revision of the standard at the first meeting following working group resolution of the comment. Published by 2011 TechAmerica Standards & Technology Department 601 Pennsylvania Ave., NW North Building, Suite 600 Washi

9、ngton, DC 20004-2650 All rights reserved - Printed in U.S.A. PLEASE! DONT VIOLATE THE LAW! This document is copyrighted by TechAmerica and may not be reproduced without permission. Organizations may obtain permission to reproduce a limited number of copies by entering into a license agreement with o

10、ur distributors. For distributor information please see our web site www. techamerica.org/ or contact TechAmerica at 703-284-5355 TechAmerica Derating of Electronic Components GEIA-STD-0008 Revision Description of change Date - Initial Release Aug 2011 GEIA-STD-0008 i ACKNOWLEDGEMENTS Members of Tas

11、k Group GTG03-02 of the TechAmerica G-12 Solid State Devices Committee developed this document. The Task Group and Committee would like to recognize the principle contributors shown below and to extend gratitude to the many others who assisted in the evolution of this Standard. Ken Finney - Boeing W

12、es Hubbell - Raytheon John Nirschl - Rockwell-Collins Jeff Jarvis - ARMY Redstone Arsenal Dan Quearry - NAVY Crane Joe Flarity - Boeing FOREWORD Derating is a method of reducing stress and/or making quantitative allowances for a components functional degradation. Consequently, derating is a means of

13、 reducing failures, extending component life, and increasing reliability. In addition, derating helps protect components from unforeseen application anomalies and overstresses. Component derating may sometimes be difficult to achieve in some instances but is critical for systems being used in severe

14、 environments. When uncontrolled components are employed they often need protection from environmental conditions and/or need derating more than controlled components. GEIA-STD-0008 ii Contents Acknowledgements i Foreword i 1 PURPOSE . 1 1.1 Definitions 1 1.2 Scope . 1 1.3 Use of this Standard 1 1.4

15、 Components not addressed in this standard . 1 2 REFERENCE DOCUMENTS 2 3 REQUIREMENTS 2 Tables 1 Integrated Circuits 3 2 Semiconductors . 4 3 Optoelectronics 6 4 Resistors 7 5 Capacitors 8 6 Magnetics . 9 7 Fuses . 10 8 Contacts (switches/relays) . 11 9 Connectors, Wire, and Cable . 12 GEIA-STD-0008

16、 1 1 PURPOSE This document is generated to provide an industry standard for derating of electronic components. For the purposes of this document, the following definitions apply: 1.1 Definitions Controlled/Uncontrolled See paragraph 3 herein. Derate To reduce the rating(s) of a component to improve

17、its reliability or to permit operation at high ambient temperatures. Derating The reduction in rating of a component. Derating limits The maximum nominal stresses that a component is allowed to experience in an application. The Derating Limits are always less than the components rated maximum stress

18、es. 1.2 Scope This Standard specifies the minimum derating requirements for using electronic components in moderately severe environments. These environments are assumed to include Airborne Inhabited Cargo (AIC), Airborne Inhabited Fighter (AIF), Ground Mobile (GM), and Naval Sheltered (NS) environm

19、ents specified in MIL-HDBK-217. This Standard is intended to supersede the derating limits contained in Defense Standardization Program Office (DSPO) Standardization Directive SD-18, Naval Standard TE000-AB-GTP-010, and Air Force ESD-TR-85-148. It is intended that a future revision of this Standard

20、will include additional requirements for derating for other environments (e.g. Airborne Uninhabited Cargo). Since this Standard specifies the minimum derating requirements, (sub)contractors may derate in excess of these requirements. This Standard is not intended for use in space or launch system ap

21、plications, which have their own existing derating standards, and shall not be used for such applications unless specifically allowed by contract. 1.3 Use of this Standard It is intended that this Standard be called out in contractual documents, and that the call-out specify what to do in case the d

22、erating limits herein cannot be met in certain cases. 1.3.1 Sample contract language: The (sub)contractor shall derate electronic components in accordance with GEIA-STD-0008. In the event the (sub)contractor intends to exceed a derating limit, the (sub)contractor shall obtain customer approval of th

23、at exception. NOTE: JEP149 may be used as the basis of the engineering evaluations, which include the component supplier in determining alternate derating criteria that will meet the application reliability requirements. The customer may want to grant blanket approval of all derating exceptions that

24、 are successfully addressed by JEP149 engineering evaluations. 1.4 Components not addressed in this standard When a component is being used that is not addressed by this standard, the user is strongly encouraged to contact the appropriate TechAmerica chairperson (G-12 Chair for solid state component

25、s, G-11 Chair for passive components) from the www.techamerica.org website (under Committees, Systems Standards and Technology Committee for determination of a value to be used and included in the next revision of this Standard. GEIA-STD-0008 2 2 REFERENCE DOCUMENTS MILITARY SD-18 Part Requirement a

26、nd Application Guide MIL-HDBK-217 Reliability Prediction of Electronic Equipment TE000-AB-GTP-010 Part Derating Requirements and Application Manual for Navy Electronic Equipment ESD-TR-85-148 Derated Application of Parts for ESD Systems Development TechAmerica GEIA-STD-0001 Aerospace Qualified Elect

27、ronic Components, Volume 1: Integrated Circuits and Semiconductors INDUSTRY Automotive Electronics Council Q100 Stress Qualification For Integrated Circuits Q101 Stress Test Qualification For Discrete Semiconductors Q200 Stress Test Qualification For Passive Components JEDEC JEP149 Application Therm

28、al Derating Methodologies Society of Automotive Engineers AS 50881 Wiring Aerospace Vehicle 3 REQUIREMENTS Components shall be derated in accordance with the Tables herein so that the stresses the component experiences in the application shall not exceed the limits specified. Military specification

29、components, automotive grade components qualified in accordance with AEC Q100 (or AEC Q101, or Q200, as appropriate), or AQEC components qualified in accordance with GEIA-STD-0001 shall be derated in accordance with the limits under the Controlled column in the Tables. All other components shall be

30、derated in accordance with the limits in the Uncontrolled column of the Tables. Hybrids shall not be derated, but analysis of the individual elements within the hybrid may use the information in the Tables herein for guidance. Monolithic Microwave Integrated Circuits (MMICs) shall be derated in acco

31、rdance with the part listed herein they are the most similar to. GEIA-STD-0008 3 Table 1 Integrated Circuits Derating Parameter Controlled Uncontrolled Sub-Type MOS - Digital Supply Voltage (1) +/-10% +/-5% Frequency 90% 80% Output Current ( Io ) 80% 70% Junction Temp. ( TJ ) (2) TJmax-40C TJmax-50C

32、 Bipolar - Digital Supply Voltage (1) +/-10% +/-5% Frequency 90% 80% Output Current ( Io ) 80% 70% Junction Temp. ( TJ ) (2) TJmax-40C TJmax-50C MOS - Linear Supply Voltage 80% 80% Input Voltage 80% 70% Frequency 90% 80% Output Current ( Io ) 80% 70% Junction Temp. ( TJ ) TJmax-40C TJmax-50C Bipolar

33、 - Linear Supply Voltage 80% 80% Input Voltage 70% 70% Frequency 90% 80% Output Current ( Io ) 80% 70% Junction Temp. ( TJ ) (2) TJmax-40C TJmax-50C MOS - Microprocessor Supply Voltage (1) +/-10% +/-5% Frequency 90% 80% Output Current ( Io ) 80% 70% Junction Temp. ( TJ ) TJmax-40C TJmax-50C Bipolar

34、- Microprocessor Supply Voltage (1) +/-10% +/-5% Frequency 90% 80% Output Current ( Io ) 80% 70% Junction Temp. ( TJ ) (2) TJmax-40C TJmax-50C MOS - Memories Supply Voltage +/-10% +/-5% Frequency 90% 80% Output Current ( Io ) 80% 70% Junction Temp. (TJ ) TJmax-40C TJmax-50C Bipolar - Memories Supply

35、 Voltage +/-10% +/-5% Frequency 90% 80% Output Current ( Io ) 80% 70% Junction Temp. ( TJ ) (2) TJmax-40C TJmax-50C Note 1 Tolerance specified is around device specifications nominal recommended voltage. Note 2 For devices with a maximum junction temperature of 125C, derate both controlled and uncon

36、trolled to a maximum of 100C. GEIA-STD-0008 4 Table 2 Semiconductors Derating Parameter Controlled Uncontrolled Sub-Type Silicon Diode (General Purpose) Forward Current (IF) 70% 60% Power 70% 50% Reverse Voltage (VR) 70% 60% Surge Current (IFSM) 70% 60% Junction Temp. ( TJ ) (1) TJmax-40C TJmax-50C

37、Power Rectifier Forward Current (IF) 70% 60% Power 70% 50% Reverse Voltage (VR) 70% 60% Surge Current (IFSM) 70% 60% Junction Temp. ( TJ ) (1) TJmax-40C TJmax-50C Schottky-PIN Power Dissipation (PD) 70% 60% Forward Current (If) 50% 50% Reverse Voltage (VR) 70% 60% Junction Temp. ( TJ ) (1) TJmax-40C

38、 TJmax-50C Voltage Regulator/Reference Power Dissipation (PD) 70% 60% Junction Temp. ( TJ ) (1) TJmax-40C TJmax-50C Transient Voltage Suppress Power Dissipation (PD) 70% 60% Average Current (IO) 70% 60% Junction Temp. ( TJ ) (1) TJmax-40C TJmax-50C Thyristor On-State Current (It) 70% 60% Off-State V

39、oltage (VDM) 70% 60% Junction Temp. ( TJ ) (1) TJmax-40C TJmax-50C Microwave Power Dissipation (PD) 70% 60% Reverse Voltage (VR) 70% 60% Junction Temp. ( TJ ) (1) TJmax-40C TJmax-50C Transistors (Bipolar) Power Dissipation (PD) 70% 60% Breakdown Voltage (VBR) 70% 60% Collector Current (IC) 70% 60% J

40、unction Temp. ( TJ ) (1) TJmax-40C TJmax-50C Transistors (FET) Power Dissipation (PD) 70% 60% Breakdown Voltage (VBR) 70% 60% Junction Temp. ( TJ ) (1) TJmax-40C TJmax-50C Transistor (JFET) Power Dissipation (PD) 70% 60% Breakdown Voltage (VBR) 70% 60% Drain Current (Ids) 70% 60% Junction Temp. ( TJ

41、 ) (1) TJmax-40C TJmax-50C GEIA-STD-0008 5 Table 2 Semiconductors (Contd) Derating Parameter Controlled Uncontrolled Sub-Type GaAs Transistor MESFET (Low noise) Drain Source Voltage (Vds) 70% 60% Gate to Source Voltage (Vgs) 70% 60% Drain Current (Ids) 70% 60% Gate Current (Igsf) 90% 80% Reverse Gat

42、e Current (Igsr) 70% 60% Power Dissipation (Pd) 70% 60% Channel Temperature (Tch) Tch-20C Tch-30C Transistors PHEMT (Low noise) Drain Source Voltage (Vds) 70% 60% Gate to Source Voltage (Vgs) 70% 60% Drain Current (Ids) 70% 60% Forward Gate Current (Igsf) 90% 80% Power Dissipation (Pd) 70% 60% Chann

43、el Temperature (Tch) Tch-20C Tch-30C Transistors MESFET (Power) Drain Source Voltage (Vds) 70% 60% Gate to Source Voltage (Vgs) 70% 60% Drain Current (Ids) 70% 60% Forward Gate Current (Igsf) 90% 80% Reverse Gate Current (Igsr) 70% 60% Power Dissipation (Pd) 70% 60% Channel Temperature (Tch) Tch-20C

44、 Tch-30C Transistors HEMT/PHEMT (Power) Drain Source Voltage (Vds) 70% 60% Gate to Source Voltage (Vgs) 70% 60% Drain Current (Ids) 70% 60% Gate Current (Igs) 90% 80% Power Dissipation (Pd) 70% 60% Channel Temperature (Tch) Tch-20C Tch-30C Diodes (Schottky) Reverse Voltage (Vr) 70% 60% Forward Curre

45、nt (If) 70% 60% Power Dissipation (Pd) 70% 60% Junction Temp. ( TJ ) TJ-20C TJ-30C Note 1 For devices with a maximum junction temperature of 125C, derate both controlled and uncontrolled to a maximum of 100C. GEIA-STD-0008 6 Table 3 Optoelectronics Derating Parameter Controlled Uncontrolled Sub-Type

46、 Light Emitting Diodes (LEDs) (1) Forward Current (IF) 70% 60% Junction Temp. ( TJ ) (2) TJmax-20C TJmax-30C Power Dissipation (Pd) 70% 60% Photodiodes Forward Current (IF) 70% 60% Junction Temp. ( TJ ) (2) TJmax-20C TJmax-30C Voltage 70% 60% Power Dissipation (Pd) 70% 60% Phototransistors Forward C

47、urrent (IF) 70% 60% Junction Temp. ( TJ ) (2) TJmax-20C TJmax-30C Voltage (BVCBO) 70% 60% Voltage (BVCEO) 70% 60% Power Dissipation (Pd) 70% 60% Optocouplers Forward Current (IF) 70% 60% Junction Temp. ( TJ ) (2) TJmax-20C TJmax-30C Voltage (BVCBO) 70% 60% Voltage (BVCEO) 70% 60% Power Dissipation (

48、Pd) 70% 60% Note 1 For red, yellow, and green type LEDs, derate power linearly from +25C at 1.4mW/C. For red, yellow and green LEDs with internal current regulation requiring no external resistors for operation on any voltage from 3Vdc to 30Vdc, derate power at 3.0mW/C above +25C. Infrared light-emi

49、tting diodes should be current de-rated at 50% to +65C and above +65C, de-rated linearly to +125C at 0.67milliamps/C. Due to widely differing types of construction being offered for blue and white LEDs, general derating information cannot be given. Consult the part manufacturer of the specific type of construction being used for recommendations. Note 2 For devices with a maximum junction temperature of 125C, derate both controlled and uncontrolled to a maximum of 100C. G