TIA-455-130-2001 Elevated Temperature Life Test for Laser Diodes.pdf

1、 TIA-455-130-2001 APPROVED: MARCH 13, 2001 REAFFIRMED: NOVEMBER 15, 2007 REAFFIRMED: OCTOBER 6, 2014 TIA-455-130 March 2001Elevated Temperature Life Test for Laser Diodes NOTICE TIA Engineering Standards and Publications are designed to serve the public interest through eliminating misunderstandings

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20、TP-130 ELEVATED TEMPERATURE LIFE TEST FOR LASER DIODES Table of Contents 1 INTRODUCTION 3 2 APPLICABLE DOCUMENTS 4 3 APPARATUS 5 4 SAMPLING 6 5 PROCEDURE. 6 6 CALCULATIONS 8 7 DOCUMENTATION 9 TIA/EIA-455-130 2THIS PAGE LEFT BLANKTIA/EIA-455-130 3ELEVATED TEMPERATURE LIFE TEST FOR LASER DIODES 1 Intr

21、oduction 1.1 Intent The procedure is intended to characterize the gradual degradation modes present in telecommunication laser diodes. The data generated will be analyzed following standard procedures of EIA/TIA-610. 1.2 Scope Although the test is intended as a means to obtain a set of parameters th

22、at describe the reliability of the device population, the determination of an activation energy due to either temperature or current density is beyond the scope of this FOTP. This test is directed toward semiconductor laser diodes used in telecommunication applications for transmission or pumping pu

23、rposes. Unless otherwise noted, this procedure applies to all semiconductor laser diodes that can be operated in a CW mode of operation; this includes pump lasers, direct and externally modulated lasers for both digital and analog applications. Also, this test is intended for sub-mounted (unpackaged

24、) devices. 1.3 Background Semiconductor lasers are commonly prone to gradual degradation mechanisms that are accelerated by both temperature and optical power. Present day lasers have median lifetimes of several years even at elevated temperatures. However, devices may have material and structural d

25、efects, therefore careful purge and burn-in procedures and screening tests should be employed to eliminate potentially unreliable product from the device population. 1.4 Hazards Eye Safey Warning Care should be exercised to avoid possible eye damage from looking into the end of an energized fiber fr

26、om a laser source. Especially, personnel should avoid looking into any energized fiber using any type of magnification device. 1.5 Summary The laser diode is thermally, electrically, and mechanically attached to a mount/submount/header which has had its parameters characterized. The TIA/EIA-455-130

27、4optical detectors used to monitor the laser facet powers are to be configured to minimize reflections back into the laser diode. The laser diode is driven in a Continuous Wave (CW) DC mode of operation at a specified laser facet power and at a specified laser submount temperature. The laser diode i

28、s driven either with an Automatic Power Control (APC) circuit in which the facet power is maintained at a constant value, or with an Automatic Current Control (ACC) circuit in which the laser diode current is maintained at a constant value. Measurements of the specified device parameters should be p

29、erformed periodically at room temperature (23 C +/-2 C). This data will be the basis for producing a set of descriptive reliability parameters for the product population, including the median degradation rate and lognormal standard deviation of the monitored parameter degradation rate. Care should b

30、e taken so the test atmosphere does not affect the laser diode. 2 Applicable documents Test of inspection requirements may include, but are not limited to, the most recent edition of the following documents: EIA/TIA-455-A Standard Test Procedures for Fiber Optic Fibers, Cables, Transducers, Sensors,

31、 Connecting and Terminating devices and Other Fiber Optic Components. FOTP 127 Spectral Characterization of Multimode Laser Diodes. (EIA/TIA-455-127) FOTP 128 Procedures for Determining Threshold Current of Semiconductor (EIA/TIA-455-128) Lasers. (to be issued). EIA/TIA-610 Procedures for Calculatin

32、g Optoelectronic Device Reliability. ANSI Z136.1 Safe Use of Lasers TIA/EIA-455-130 53 Apparatus 3.1 Fixture The apparatus used to hold the diode mount/submount/header assembly shall be temperature controlled to within +/- 2 C for the duration of the test. Figure 1 shows a schematic diagram of the t

33、emperature measurements points. Figure 1. Schematic of a Typical Laser Test Configuration 3.2 Control Circuitry The laser diode control circuit shall drive the laser bias in one of the following modes: Method A Automatic Power Control (APC) Method B Automatic Current Control (ACC) TIA/EIA-455-130 6T

34、he preferred method of control is the APC mode since the device is typically operated in that fashion in use conditions. A photo detector is required to monitor the laser facet power level to provide feedback in the APC control mode. It is recommended that the control circuit for the device include

35、protection features such as current limits, soft start circuitry, ESD protection, and isolation, both electrically and thermally, from neighboring devices. 3.3 Optical Detectors The optical detectors for monitoring the facet output power over time shall be appropriate for the specific application. 3

36、.4 Characterization Test Set A test set capable of measuring the required parameters in-situ shall be available to characterize the laser at specified intervals during the test. 4 Sampling Specimens are selected by a random sampling so as to represent the standard manufactured product. Appropriate h

37、andling precautions shall be used. The minimum sample size for an aging study is 10 devices for 10,000 hours. Otherwise, the minimum sample shall be 25 devices. Larger sample sizes are recommended for improved confidence in the estimated reliability calculations. 5 Procedure 5.1 Initial Characteriza

38、tion The laser diode shall be fully tested in accordance with the detailed test specification. The laser diode shall be initially tested on a calibrated test set traceable to National Institute of Standards and Technology (NIST). This test set shall be available upon the completion of the aging test

39、. This test is a complete characterization of the device in accordance with aforementioned detailed test specification and is typically only done before and after the aging test. A method for TIA/EIA-455-130 7determining the change, in time, of the test set shall be established to compensate for any

40、 test set drift affecting the aging data. 5.2 Aging procedure and interim measurements The device shall be attached to an external heat sink. Thermal compound may be required to provide adequate contact to the heat sink fixture. The laser diode shall be biased to the specified operating point. The d

41、evice and heat sink/source shall be brought to thermal equilibrium at the specified heat sink temperature. The device shall be operated isothermally in a DC mode and data acquired at specified time intervals. If only one facet is in-situ monitored, either the facet with the highest light level or th

42、e facet to be coupled to the optical fiber shall be monitored. As a minimum the following parameters shall be measured at specified intervals (not less than one measurement every 24 hours): If Laser forward current Pa Facet a power level Pb Facet b power level Tdevice Device Temperature time Time un

43、der test The complete list of parameters to be measured shall be specified in the appropriate detail test specification. The device temperature, Tdevice, should be measured as close to the laser diode as possible, and it is advantageous to measure the temperature of each device under test. 5.3 Final

44、 characterization The laser shall be removed from the aging rack after the required length of time. If the in-situ data acquisition method is used, a final data point shall be recorded before removing the laser from the aging rack. The device shall be retested using the same test set as used for the

45、 initial test, along with the same set of controls or standards, if functional performance data other than the degradation parameters are required. 5.4 Measurements The appropriate number of points to be taken during the duration of the test shall be TIA/EIA-455-130 8sufficient to perform a linear r

46、egression fit of the monitored parameter vs time and obtain an estimate of the degradation rate for each device. The determination of the number of data points to take during the life test should take into account the noise of the measurement, and noise of the control circuitry, such that a low agin

47、g rate can be resolved. 5.5 Test Conditions The test shall be performed according to Table 1, below, for the duration at the temperature specified under the specific condition. For example the conditions specified for an 85 C test for 10,000 hours would be “Bc“ TABLE 1: AGING CONDITIONS 6 Calculatio

48、ns _ The acquired data shall be analyzed according to the method described in EIA/TIA-610. CONDITION TEMP ( C) A 70 B 85 C Customer Specified or per detail spec. CONDITION Specified TIME (HOURS) a 2,000 b 5,000 c 10,000 d Customer Specified or detail spec. TIA/EIA-455-130 97 Documentation 7.1 The fo

49、llowing data shall be supplied for sample tested and for each laser diode at the conclusion of each life test. For the sample tested: 7.1.1 Test condition (Time and Temperature from Table 1) 7.1.2 Date, title of test, FOTP used, specimen ID 7.1.3 Control mode for life testing (APC or ACC) 7.1.4 Parameters measured at intermediate points in time 7.1.5 Frequency of data monitoring 7.1.6 Facet optical power 7.1.7 Duration of test 7.1.8 Aging temperature C (temperature under which aging is tests are conducted) 7.