1、 IEC 60747-15 Edition 2.0 2010-12 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Discrete devices Part 15: Isolated power semiconductor devices Dispositifs semiconducteurs Dispositifs discrets Partie 15: Dispositifs de puissance semiconducteurs isols IEC 60747-15:2010 THIS PUBLICA
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16、ctez-nous: Email: csciec.ch Tl.: +41 22 919 02 11 Fax: +41 22 919 03 00 IEC 60747-15 Edition 2.0 2010-12 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Discrete devices Part 15: Isolated power semiconductor devices Dispositifs semiconducteurs Dispositifs discrets Partie 15: Dispos
17、itifs de puissance semiconducteurs isols INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE T ICS 31.080.99 PRICE CODE CODE PRIX ISBN 978-2-88912-310-0 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechniq
18、ue Internationale 2 60747-15 IEC:2010 CONTENTS FORE WORD 4 1 Scop e 6 2 Normative references 6 3 Terms and definitions 7 4 Letter symbols 8 4.1 Gene ra l . 8 4.2 Additional subscripts/symbols 8 4.3 List letter symbols 8 4.3.1 Voltages and currents 8 4.3.2 Mechanical symbols 8 4.3.3 Other symbols 9 5
19、 Essential ratings (limiting values) and characteristics . 9 5.1 Gene ra l . 9 5.2 Ratings (limiting values) 9 5.2.1 Isolation voltage (V isol ) 9 5.2.2 Peak case non-rupture current (I RSMCor I CNR ) (where appropriate) 9 5.2.3 Terminal current (I tRMS ) (where appropriate), . 9 5.2.4 Total power d
20、issipation (P tot ) 9 5.2.5 Temperatures . 9 5.2.6 Mechanical ratings 10 5.2.7 Climatic ratings (where appropriate) 10 5.3 Characteristics . 10 5.3.1 Mechanical characteristics . 10 5.3.2 Parasitic inductance (L p ) 11 5.3.3 Parasitic capacitances (C p ) 11 5.3.4 Partial discharge inception voltage
21、V iMor V i(RMS) ) (where appropriate) 11 5.3.5 Partial discharge extinction voltage (V eM or V e(RMS) ) (where appropriate) 11 5.3.6 Thermal resistances 11 5.3.7 Transient thermal impedance (Z th ) 12 6 Measurement methods 12 6.1 Verification of isolation voltage rating between terminals and base p
22、late (V isol ) 12 6.2 Methods of measurement 13 6.2.1 Partial discharge inception and extinction voltages (V i ) (V e ) 13 6.2.2 Parasitic inductance (L p ) 13 6.2.3 Parasitic capacitance terminal to case (C p ) 15 6.2.4 Thermal characteristics 16 7 Acceptance and reliability 18 7.1 General requirem
23、ents . 18 7.2 List of endurance tests . 19 7.3 Acceptance defining criteria 19 7.4 Type tests and routine tests 19 7.4.1 Type tests 19 7.4.2 Routine tests 20 Annex A (informative) Test method of peak case non-rupture current 21 60747-15 IEC:2010 3 Annex B (informative) Measuring method of the thickn
24、ess of thermal compound paste . 24 Bibliography . 25 Figure 1 Basic circuit diagram for isolation breakdown withstand voltage test (“high pot test”) with V isol12 Figure 2 Circuit diagram for measurement of parasitic inductances (L p ) . 14 Figure 3 Wave forms 15 Figure 4 Circuit diagram for measure
25、ment of parasitic capacitance C p16 Figure 5 Cross-section of an isolated power device with reference points for temperature measurement of T cand T s17 Figure A.1 Circuit diagram for test of peak case non-rupture current I CNR21 Figure B.1 Example of a measuring gauge for a layer of thermal compoun
26、d paste of a thickness between 5 mm and 150 mm . 24 Table 1 Endurance tests . 19 Table 2 Acceptance defining characteristics for endurance and reliability tests 19 Table 3 Minimum type and routine tests for isolated power semiconductor devices . 20 4 60747-15 IEC:2010 INTERNATIONAL ELECTROTECHNICAL
27、COMMISSION _ SEMICONDUCTOR DEVICES DISCRETE DEVICES Part 15: Isolated power semiconductor devices FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object
28、of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications
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34、ide any attestation of conformity. Independent certification bodies provide conformity assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any services carried out by independent certification bodies. 6) All users should ensure that they have the lat
35、est edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and members of its technical committees and IEC National Committees for any personal injury, property damage or other damage of any nature whatsoever, whe
36、ther direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications. 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is i
37、ndispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 60
38、747-15 has been prepared by subcommittee 47E: Discrete semiconductor devices, of IEC technical committee 47: Semiconductor devices. This second edition of IEC 60747-15 cancels and replaces the first edition published in 2003. The main changes with respect to previous edition are listed below. a) Cla
39、use 3, 4 and 5 were re-edited and some of them were combined to other sub clauses. b) Clause 6, 7 were re-edited as a part of “Measuring methods” with amendment of suitable addition and deletion. c) Clause 8 was amended by suitable addition and deletion. d) Annex C, D and Bibliography were deleted.
40、60747-15 IEC:2010 5 The text of this standard is based on the following documents: FDIS Report on voting 47E/403/FDIS 47E/407/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in a
41、ccordance with the ISO/IEC Directives, Part 2. This International Standard is to be read in conjunction with IEC 60747-1:2006. A list of all the parts in the IEC 60747 series, under the general title Semiconductor devices Discrete devices, can be found on the IEC website. The committee has decided t
42、hat the contents of this publication will remain unchanged until the stability date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. 6
43、60747-15 IEC:2010 SEMICONDUCTOR DEVICES DISCRETE DEVICES Part 15: Isolated power semiconductor devices 1 Scope This part of IEC 60747 gives the requirements for isolated power semiconductor devices excluding devices with incorporated control circuits. These requirements are additional to those given
44、 in other parts of IEC 60747 for the corresponding non-isolated power devices. 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the ref
45、erenced document (including any amendments) applies. IEC 60270, High-voltage test techniques Partial discharge measurements IEC 60664-1:2007, Insulation coordination for equipment within low-voltage systems Part 1: Principles, requirements and tests IEC 60721-3-3:1994, Classification of environmenta
46、l conditions Part 3-3: Classification of groups of environmental parameters and their severities Stationary use at weather protected locations IEC 60747-1:2006, Semiconductor devices Part 1: General IEC 60747-2, Semiconductor devices Discrete devices and integrated circuits Part 2: Rectifier diodes
47、IEC 60747-6, Semiconductor devices Part 6: Thyristors IEC 60747-7, Semiconductor discrete devices and integrated circuits Part 7: Bipolar transistors IEC 60747-8, Semiconductor devices Part 8: Field-effect transistors IEC 60747-9, Semiconductor devices Discrete devices Part 9: Insulated-gate bipolar
48、 transistors (IGBTs) IEC 60749-5, Semiconductor devices Mechanical and climatic test methods Part 5: Steady-state temperature humidity bias life test IEC 60749-6, Semiconductor devices Mechanical and climatic test methods Part 6: Storage at high temperature IEC 60749-10, Semiconductor devices Mechan
49、ical and climatic test methods Part 10: Mechanical shock IEC 60749-12, Semiconductor devices Mechanical and climatic test methods Part 12: Vibration, variable frequency 60747-15 IEC:2010 7 IEC 60749-15, Semiconductor devices Mechanical and climatic test methods Part 15: Resistance to soldering temperature for through-hole mounted devices IEC 60749-21,
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