IEC 60747-16-3-2002 Semiconductor devices - Part 16-3 Microwave integrated circuits Frequency converters《半导体器件.第16-3部分 微波集成电路.频率变压器》.pdf

1、INTERNATIONALSTANDARDIEC60747-16-3First edition2002-05Semiconductor devices Part 16-3:Microwave integrated circuits Frequency convertersDispositifs semiconducteurs Partie 16-3:Circuits intgrs hyperfrquences Convertisseurs de frquenceReference numberIEC 60747-16-3:2002(E)Copyright International Elect

2、rotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-Publication numberingAs from 1 January 1997 all IEC publications are issued with a designation in the60000 series. For example, IEC 34-1 is now referred to as

3、 IEC 60034-1.Consolidated editionsThe IEC is now publishing consolidated versions of its publications. For example,edition numbers 1.0, 1.1 and 1.2 refer, respectively, to the base publication, thebase publication incorporating amendment 1 and the base publication incorporatingamendments 1 and 2.Fur

4、ther information on IEC publicationsThe technical content of IEC publications is kept under constant review by the IEC,thus ensuring that the content reflects current technology. Information relating tothis publication, including its validity, is available in the IEC Catalogue ofpublications (see be

5、low) in addition to new editions, amendments and corrigenda.Information on the subjects under consideration and work in progress undertakenby the technical committee which has prepared this publication, as well as the listof publications issued, is also available from the following: IEC Web Site (ww

6、w.iec.ch) Catalogue of IEC publicationsThe on-line catalogue on the IEC web site (www.iec.ch/catlg-e.htm) enablesyou to search by a variety of criteria including text searches, technicalcommittees and date of publication. On-line information is also available onrecently issued publications, withdraw

7、n and replaced publications, as well ascorrigenda. IEC Just PublishedThis summary of recently issued publications (www.iec.ch/JP.htm) is alsoavailable by email. Please contact the Customer Service Centre (see below) forfurther information. Customer Service CentreIf you have any questions regarding t

8、his publication or need further assistance,please contact the Customer Service Centre:Email: custserviec.chTel: +41 22 919 02 11Fax: +41 22 919 03 00Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without

9、 license from IHS-,-INTERNATIONALSTANDARDIEC60747-16-3First edition2002-05Semiconductor devices Part 16-3:Microwave integrated circuits Frequency convertersDispositifs semiconducteurs Partie 16-3:Circuits intgrs hyperfrquences Convertisseurs de frquence IEC 2002 Copyright - all rights reservedNo par

10、t of this publication may be reproduced or utilized in any form or by any means, electronic ormechanical, including photocopying and microfilm, without permission in writing from the publisher.International Electrotechnical Commission, 3, rue de Varemb, PO Box 131, CH-1211 Geneva 20, SwitzerlandTele

11、phone: +41 22 919 02 11 Telefax: +41 22 919 03 00 E-mail: inmailiec.ch Web: www.iec.chRFor price, see current cataloguePRICE CODECommission Electrotechnique InternationaleInternational Electrotechnical Commission Copyright International Electrotechnical Commission Provided by IHS under license with

12、IECNot for ResaleNo reproduction or networking permitted without license from IHS-,- 2 60747-16-3 IEC:2002(E)CONTENTSFOREWORD.31 Scope.42 Normative references .43 Terms and definitions .44 Abbreviated terms 65 Essential ratings and characteristics.65.1 General .65.2 Application description 75.3 Spec

13、ification of the function 85.4 Limiting values (absolute maximum rating system) 95.5 Operating conditions (within the specified operating temperature range) .115.6 Electrical characteristics115.7 Mechanical and environmental ratings, characteristics and data125.8 Additional information126 Measuring

14、methods 136.1 General .136.2 Conversion gain (Gc) .146.3 Conversion gain flatness (Gc)166.4 LO/IF isolation (PLO /PLO(IF) .186.5 LO/RF isolation (PLO /PLO(RF).196.6 RF/IF isolation.206.7 Image rejection (Po /Po(im) 246.8 Sideband suppression (Po /Po(U).266.9 Output power (Po)286.10 Output power at 1

15、dB conversion compression (Po(1dB) 296.11 Noise figure (F) .306.12 Intermodulation distortion (Pn /P1)326.13 Output power at the intercept point (for intermodulation products) (Pn(IP) .356.14 LO port return loss (Lret(LO) 366.15 RF port return loss (Lret(RF) 376.16 IF port return loss (Lret(IF).39F

16、igure 1 Electrical terminal symbols.9Figure 2 Circuit diagram for the measurement of conversion gain 14Figure 3 Circuit diagram for the measurement of the LO/IF isolation 18Figure 4 Circuit diagram for the measurement of the LO/RF isolation.19Figure 5 Circuit diagram for the measurement of the RF/IF

17、 isolation for type A 21Figure 6 Circuit diagram for the measurement of the RF/IF isolation for type B 23Figure 7 Circuit diagram for measurement of noise figure 30Figure 8 Circuit for the measurement of intermodulation distortion .33Figure 9 Circuit for the measurement of the LO port return loss .3

18、6Figure 10 Circuit for the measurement of the RF/IF port return loss .38Table 1 Function of terminal.8Table 2 Electrical limiting values 10Table 3 Electrical characteristics12Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or ne

19、tworking permitted without license from IHS-,-60747-16-3 IEC:2002(E) 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION_SEMICONDUCTOR DEVICES Part 16-3: Microwave integrated circuits Frequency convertersFOREWORD1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardi

20、zation comprisingall national electrotechnical committees (IEC National Committees). The object of the IEC is to promoteinternational co-operation on all questions concerning standardization in the electrical and electronic fields. Tothis end and in addition to other activities, the IEC publishes In

21、ternational Standards. Their preparation isentrusted to technical committees; any IEC National Committee interested in the subject dealt with mayparticipate in this preparatory work. International, governmental and non-governmental organizations liaisingwith the IEC also participate in this preparat

22、ion. The IEC collaborates closely with the InternationalOrganization for Standardization (ISO) in accordance with conditions determined by agreement between thetwo organizations.2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, aninternational cons

23、ensus of opinion on the relevant subjects since each technical committee has representationfrom all interested National Committees.3) The documents produced have the form of recommendations for international use and are published in the formof standards, technical specifications, technical reports o

24、r guides and they are accepted by the NationalCommittees in that sense.4) In order to promote international unification, IEC National Committees undertake to apply IEC InternationalStandards transparently to the maximum extent possible in their national and regional standards. Anydivergence between

25、the IEC Standard and the corresponding national or regional standard shall be clearlyindicated in the latter.5) The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for anyequipment declared to be in conformity with one of its standards.6) Attention is dr

26、awn to the possibility that some of the elements of this International Standard may be the subjectof patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.International Standard IEC 60747-16-3 has been prepared by subcommittee 47E: Discretesemiconductor d

27、evices, of IEC technical committee 47: Semiconductor devices.The text of this standard is based on the following documents:FDIS Report on voting47E/212/FDIS 47E/219/RVDFull information on the voting for the approval of this standard can be found in the report onvoting indicated in the above table.Th

28、is publication has been drafted in accordance with the ISO/IEC Directives, Part 3.The committee has decided that the contents of this publication will remain unchanged until2008. At this date, the publication will be reconfirmed; withdrawn; replaced by a revised edition, or amended.Copyright Interna

29、tional Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,- 4 60747-16-3 IEC:2002(E)SEMICONDUCTOR DEVICES Part 16-3: Microwave integrated circuits Frequency converters1 ScopeThis part of IEC 60747 provides

30、 new measuring methods, terminology and letter symbols, aswell as essential ratings and characteristics for integrated circuit microwave frequencyconverters.2 Normative referencesThe following referenced documents are indispensable for the application of this document.For dated references, only the

31、edition cited applies. For undated references, the latest editionof the referenced document (including any amendments) applies.IEC 60617-12, Graphical symbols for diagrams Part 12: Binary logic elementsIEC 60617-13, Graphical symbols for diagrams Part 13: Analogue elementsIEC 60747-1:1983, Semicondu

32、ctor devices Discrete devices and integrated circuits Part 1:GeneralIEC 60748-2:1997, Semiconductor devices Integrated circuits Part 2: Digital integratedcircuitsIEC 60748-3, Semiconductor devices Integrated circuits Part 3: Analogue integrated circuitsIEC 60748-4, Semiconductor devices Integrated c

33、ircuits Part 4: Interface integrated circuits3 Terms and definitionsFor the purpose of this part of IEC 60747, the following terms and definitions apply:3.1conversion gain, Gcratio of the desired converted output power to the input powerNOTE Usually, the conversion gain is expressed in decibels.3.2c

34、onversion gain flatness, Gcdifference between the maximum and the minimum conversion gain for a specified inputpower in a specified frequency range3.3LO/RF isolation, PLO/PLO(RF)ratio of the incident local power to the local leakage power at the RF port with the IF portterminated in a specified impe

35、danceCopyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-60747-16-3 IEC:2002(E) 5 3.4LO/IF isolation, PLO/PLO(IF)ratio of the incident local power to the local leakage power at the

36、IF port with the RF portterminated in a specified impedance3.5RF/IF isolation, PRF/PRF(IF)ratio of the incident RF power to the RF feedthrough power at the IF port for a specifiedlocal powerNOTE Usually, the RF/IF isolation is applied to the down-converter.3.6IF/RF isolation, PIF/PIF(RF)ratio of the

37、 incident IF power to the IF feedthrough power at the RF port for a specifiedlocal powerNOTE Usually, the IF/RF isolation is applied to the up-converter.3.7image rejection, Po/Po(im)ratio of the output power when the RF signal is applied, to the output power when the imagesignal is appliedNOTE Usual

38、ly, the image rejection is applied to the down-converter.3.8sideband suppression, Po/Po(U)ratio of the output power of the desired sideband to the output power of the undesiredsidebandNOTE Usually, the sideband suppression is applied to the up-converter.3.9LO port return loss, Lret(LO)ratio of the s

39、pecified incident power at the LO port to the reflected power at the LO port, withthe RF port and the IF port terminated in each specified impedance3.10RF port return loss, Lret(RF)ratio of the incident power at the RF port to the reflected power at the RF port for a specifiedlocal power, with the I

40、F port terminated in a specified impedance3.11IF port return loss, Lret(IF)ratio of the incident power at the IF port to the reflected power at the IF port for a specifiedlocal power, with the RF port terminated in a specified impedance3.12output power, Posee IEC 60747-16-2, 3.313.13output power at

41、1-dB conversion compression, Po(1dB)output power where the conversion gain decreases by 1 dB compared with the linearconversion gain1IEC 60747-16-2:2001, Semiconductor devices Part 16-2: Microwave integrated circuits Frequency prescalersCopyright International Electrotechnical Commission Provided by

42、 IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,- 6 60747-16-3 IEC:2002(E)3.14noise figure, Fsee IEC 60747-1 Chapter IV, 5.4.43.15intermodulation distortion, Pn/P1ratio of the output power of the nth order component to the output power of th

43、e fundamentalcomponent, at a specified input power3.16output power at the intercept point (for intermodulation products), Pn(IP)output power at the intersection between the extrapolated output powers of the fundamentalcomponent and the nth order intermodulation components, when the extrapolation is

44、carriedout in a diagram showing the output power of the components (in decibels) as a function ofthe input power (in decibels)4 Abbreviated termsThe abbreviations used in this part of IEC 60747 are as follows:RF Radio Frequency;IF Intermediate Frequency;LO Local Oscillator.5 Essential ratings and ch

45、aracteristics5.1 GeneralThis clause gives ratings and characteristics required for specifying integrated circuitmicrowave frequency converters.5.1.1 Circuit identification and types5.1.1.1 Designation and typesThe identification of type (device name), the category of circuit and technology applied s

46、hallbe given.Microwave frequency converters are divided into two categories: type A: down-converter; type B: up-converter.5.1.1.2 General function descriptionA general description shall be made of the function performed by the integrated circuitmicrowave frequency converters and the features for the

47、 application.5.1.1.3 Manufacturing technologyThe manufacturing technology, for example, semiconductor monolithic integrated circuit, thinfilm integrated circuit, micro-assembly, shall be stated. This statement shall include detailsof the semiconductor technologies such as Schottoky-barrier diode, ME

48、SFET, Si bipolartransistor, HBT.Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-60747-16-3 IEC:2002(E) 7 5.1.1.4 Package identificationThe following shall be stated:a) chip or packaged form;b) IEC and/or national reference number of the outline drawing, or of drawing of non-standardpackage including terminal numbering;c) principal package material, for example, metal, ceramic, plastic;d) for chip for