IEC 60747-5-5 Edition 1.1-2013 Semiconductor devices - Discrete devices - Part 5-5 Optoelectronic devices - Photocouplers《半导体器件.分立器件.第5-5部分 光电器件.光电耦合器》.pdf

1、 IEC 60747-5-5 Edition 1.1 2013-05 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Discrete devices Part 5-5: Optoelectronic devices Photocouplers Dispositifs semiconducteurs Dispositifs discrets Partie 5-5: Dispositifs optolectroniques Photocoupleurs IEC60747-5-5:2007+A1:2013 colo

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16、STANDARD NORME INTERNATIONALE Semiconductor devices Discrete devices Part 5-5: Optoelectronic devices Photocouplers Dispositifs semiconducteurs Dispositifs discrets Partie 5-5: Dispositifs optolectroniques Photocoupleurs INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATI

17、ONALE ICS 31.080.01; 31.260 ISBN 978-2-8322-0814-4 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale Warning! Make sure that you obtained this publication from an authorized distributor. Attention! Veuillez vous assure

18、r que vous avez obtenu cette publication via un distributeur agr. colourinside 2 60747-5-5 IEC:2007+A1:2013 CONTENTS FOREWORD . 6 1 Scope . 8 2 Normative references . 8 3 Photocoupler 9 3.1 Semiconductor material . 9 3.2 Details of outline and encapsulation 9 3.2.1 IEC and/or national reference numb

19、er of the outline drawing . 9 3.2.2 Method of encapsulation: glass/metal/plastic/other 9 3.2.3 Terminal identification and indication of any connection between a terminal and the case 9 3.3 Type of photocouplers . 9 3.3.1 DC input photocoupler . 9 3.3.2 AC input photocoupler . 9 3.3.3 Phototransisto

20、r photocoupler . 9 3.3.4 Photodarlington photocoupler 9 3.3.5 Photothyristor photocoupler . 9 3.3.6 Phototriac photocoupler . 10 3.3.7 IC photocoupler . 10 3.3.8 FET photocoupler 10 3.3.9 Photodiode photocoupler . 10 3.3.10 IC input photocoupler 10 3.3.11 Solid state opto relay . 10 4 Terms related

21、to ratings and characteristics for photocouplers . 10 4.1 Current transfer ratio . 10 4.1.1 Static value of the (forward) current transfer ratio hF(ctr). 10 4.1.2 Small-signal short-circuit (forward) current transfer ratio hf(ctr). 10 4.2 Cut-off frequency fco. 10 4.3 Input-to-output capacitance CIO

22、10 4.4 Isolation resistance RIO10 4.5 Isolation voltage 10 4.5.1 DC isolation voltage VIO11 4.5.2 Repetitive peak isolation voltage VIORM. 11 4.5.3 Surge isolation voltage VIOSM11 4.6 Terms related to photocouplers with phototriac output and/or solid state opto-relay with triac output 11 4.6.1 Repet

23、itive peak voltage . 11 4.6.2 Repetitive peak off-state voltage VDRM. 11 4.6.3 Repetitive peak reverse voltage VRRM11 4.6.4 RMS on-state current IT(RMS)11 4.6.5 Peak off-state current IDRM11 4.6.6 Peak on-state voltage VTM11 4.6.7 DC off-state current IBD11 60747-5-5 IEC:2007+A1:2013 3 4.6.8 DC on-s

24、tate voltage VT. 11 4.6.9 Holding current IH. 11 4.6.10 Critical rate of rise of off-state voltage dV/dt 11 4.6.11 Trigger input current IFT12 4.7 Common mode transient immunity CMTI . 12 5 Terms for photocoupler providing protection against electrical shock 12 5.1 Safety ratings of a photocoupler f

25、or reinforced isolation 12 5.2 Electrical safety requirements of a photocoupler for reinforced isolation 12 5.2.1 Partial discharge pd. 12 5.2.2 Apparent charge qpd, q . 12 5.2.3 Threshold apparent charge qpd(TH), qTH12 5.2.4 Test voltages for the partial-discharge test of a photocoupler 12 5.2.5 Te

26、st voltage Vpd(t), Vt. 12 5.2.6 Partial discharge test voltage Vpd(t)13 5.2.7 Initial test voltage Vpd(ini), Vini. 13 5.2.8 Apparent charge measuring voltage Vpd(m), Vm. 13 5.2.9 Partial-discharge inception voltage Vpd(i), Vi. 13 5.2.10 Partial-discharge extinction voltage Vpd(e), Ve13 5.2.11 Time i

27、ntervals of the test voltage . 13 5.3 Isolation voltages and isolation test voltages for photocouplers providing protection against electrical shock . 16 5.3.1 Rated isolation voltage 16 5.4 Limiting values (absolute maximum system) over the operating temperature range, unless otherwise stated 16 5.

28、4.1 Minimum and maximum storage temperatures Tstg. 16 5.4.2 Minimum and maximum ambient or reference-point operating temperatures Tambor Tref16 5.4.3 Maximum soldering temperature Tsld16 5.4.4 Maximum continuous (direct) reverse input voltage VR16 5.4.5 Maximum collector-emitter voltage, with the ba

29、se open-circuited VCEO16 5.4.6 Maximum collector-base voltage, where an external base connection is present, with the emitter open-circuited VCBO. 16 5.4.7 Maximum emitter-base voltage, where an external base connection is present, with the collector open-circuited VEBO16 5.4.8 Maximum emitter-colle

30、ctor voltage, where no external base connection is present VECO16 5.4.9 Maximum continuous (direct) or repetitive peak isolation voltage VIOor VIORM16 5.4.10 Where appropriate, maximum surge isolation voltage VIOSM16 5.4.11 Maximum continuous collector current IC17 5.4.12 Maximum continuous forward

31、input current IFat an ambient or reference-point temperature of 25 C and derating curve or derating factor . 17 5.4.13 Maximum peak forward input current IFMat an ambient or reference-point temperature of 25 C and under specified pulse conditions 17 4 60747-5-5 IEC:2007+A1:2013 5.4.14 Maximum power

32、dissipation Ptrnof the output transistor at an ambient or reference-point temperature of 25 C and a derating curve or derating factor . 17 5.4.15 Maximum total power dissipation of the package Ptotat an ambient or reference-point temperature of 25 C and derating curve or derating factor . 17 6 Elect

33、rical characteristics . 17 6.1 Phototransistor output photocoupler 17 6.2 Phototriac output photocoupler or solid state opto-relay 19 7 Photocouplers providing protection against electrical shock 19 7.1 Type 19 7.2 Ratings (have to be mentioned in a special section in the manufacturers data sheet) 1

34、9 7.2.1 Safety ratings 19 7.2.2 Functional ratings 19 7.2.3 Rated isolation voltages 19 7.3 Electrical safety requirements . 20 7.4 Electrical, environmental and/or endurance test information (supplementary information) . 20 8 Measuring methods for photocouplers 27 8.1 Current transfer ratio hF(ctr)

35、27 8.2 Input-to-output capacitance CIO28 8.3 Isolation resistance between input and output RIO29 8.4 Isolation test 30 8.5 Partial discharges of photocouplers . 31 8.6 Collector-emitter saturation voltage VCE(sat)of a photocoupler 34 8.6.1 Collector-emitter saturation voltage (d.c. method) 34 8.6.2

36、Collector-emitter saturation voltage (pulse method) . 35 8.7 Switching times ton, toff of a photocoupler 36 8.8 Peak off-state current IDRM37 8.9 Peak on-state voltage VTM. 39 8.10 DC off-state current IBD41 8.11 DC on-state voltage VT. 42 8.12 Holding current IH. 43 8.13 Critical rate of rise of of

37、f-state voltage dV/dt 43 8.14 Trigger input current IFT46 8.15 Measuring methods of common mode transient immunity (CMTI) for photocoupler . 47 9 Testing methods of electrical rating for phototriac coupler 49 9.1 Repetitive peak off-state voltage VDRM49 9.2 DC off-state voltage VBD50 Annex A (normat

38、ive) Input/output safety test 51 Bibliography 52 60747-5-5 IEC:2007+A1:2013 5 Figure 1a Time intervals for method a) . 14 Figure 1b Time intervals for method b) . 15 Figure 1 Time intervals of the test voltage 15 Figure 2 Test voltage . 17 Figure 3 Measurement circuit . 27 Figure 4 Measurement circu

39、it for input to output capacitance . 29 Figure 5 Measurement circuit for isolation resistance . 29 Figure 6 Test circuit for withstanding isolation voltage . 30 Figure 7 Partial discharge test circuit . 31 Figure 8 Complete test arrangement connections for calibration 32 Figure 9 DC measurement circ

40、uit . 34 Figure 10 Pulse measurement circuit . 35 Figure 11 Switching time measurement circuit . 36 Figure 12 Switching times 37 Figure 13 Measurement circuit for peak off-state current 38 Figure 14 Waveforms of the peak off-state voltage and current 39 Figure 15 Measurement circuit for peak on-stat

41、e voltage . 40 Figure 16 Waveforms of the peak on-state voltage and current 41 Figure 17 Measurement circuit for d.c. off-state current . 41 Figure 18 Measurement circuit for d.c. on-state voltage . 42 Figure 19 Measurement circuit for holding current 43 Figure 20 Measurement circuit for critical ra

42、te of rise of off-state voltage . 44 Figure 21 Exponential waveform of the off-voltage (VD) . 45 Figure 22 Linear pulse form of the off-voltage (VD) . 45 Figure 23 Measurement circuit for the trigger input current 46 Figure 24 Output terminal voltage versus input forward current 46 Figure 25 Common

43、mode transient immunity (CMTI) measurement circuit for photocoupler . 47 Figure 26 Typical waveforms of the common mode pulse (VCM) and optocoupler output (VO) . 49 Figure A.1 Circuit diagram . 51 Table 1 Datasheet characteristics 20 Table 2 Tests and test sequence for photocoupler providing protect

44、ion against electrical shock . 26 Table 3 Test conditions 27 6 60747-5-5 IEC:2007+A1:2013 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES DISCRETE DEVICES Part 5-5: Optoelectronic devices Photocouplers FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide o

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