IEC 60749-34-2010 Semiconductor devices - Mechanical and climatic test methods - Part 34 Power cycling《半导体器件.机械和环境测试方法.第34部分 电力循环》.pdf

1、 IEC 60749-34 Edition 2.0 2010-10 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Mechanical and climatic test methods Part 34: Power cycling Dispositifs semiconducteurs Mthodes dessais mcaniques et climatiques Partie 34: Cycles en puissance IEC 60749-34:2010 THIS PUBLICATION IS CO

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16、Email: csciec.ch Tl.: +41 22 919 02 11 Fax: +41 22 919 03 00 IEC 60749-34 Edition 2.0 2010-10 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Mechanical and climatic test methods Part 34: Power cycling Dispositifs semiconducteurs Mthodes dessais mcaniques et climatiques Partie 34:

17、Cycles en puissance INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE L ICS 31.080.01 PRICE CODE CODE PRIX ISBN 978-2-88912-232-5 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale 2 6

18、0749-34 IEC:2010 CONTENTS FOREWORD.3 1 Scope and object5 2 Normative references .5 3 Terms and definitions .5 4 Test apparatus .6 5 Procedure 7 6 Test conditions.7 7 Precautions 8 8 Measurements9 9 Failure criteria 9 10 Summary9 Bibliography10 Figure 1 Typical load power P and temperature cycle test

19、 condition 28 Table 1 Test conditions8 60749-34 IEC:2010 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MECHANICAL AND CLIMATIC TEST METHODS Part 34: Power cycling FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization com

20、prising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Sta

21、ndards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate in this pre

22、paratory work. International, governmental and non- governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between the two orga

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25、ion by any end user. 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications transparently to the maximum extent possible in their national and regional publications. Any divergence between any IEC Publication and the corresponding national or reg

26、ional publication shall be clearly indicated in the latter. 5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any services carried out

27、 by independent certification bodies. 6) All users should ensure that they have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and members of its technical committees and IEC National Committees

28、 for any personal injury, property damage or other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications. 8) Attention is drawn to the

29、Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held r

30、esponsible for identifying any or all such patent rights. International Standard IEC 60749-34 has been prepared by IEC technical committee 47: Semiconductor devices. This second edition cancels and replaces the first edition published in 2004 and constitutes a technical revision. The significant cha

31、nges with respect from the previous edition include: the specification of tighter conditions for more accelerated power cycling in the wire bond fatigue mode; information that under harsh power cycling conditions high current densities in a thin die metalization might initiate electromigration effec

32、ts close to wire bonds. 4 60749-34 IEC:2010 The text of this standard is based on the following documents: FDIS Report on voting 47/2068/FDIS 47/2079/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publicati

33、on has been drafted in accordance with the ISO/IEC Directives, Part 2. A list of all parts in the IEC 60749 series, under the general title Semiconductor devices Mechanical and climatic test methods, can be found on the IEC website. The committee has decided that the contents of this publication wil

34、l remain unchanged until the stability date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. 60749-34 IEC:2010 5 SEMICONDUCTOR DEVICES

35、MECHANICAL AND CLIMATIC TEST METHODS Part 34: Power cycling 1 Scope and object This part of IEC 60749 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and inter

36、nal connectors. This happens when low- voltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature. The power cycling test is intended to simulate typical applications in power electronics and is complementary to high tem

37、perature operating life (see IEC 60749-23). Exposure to this test may not induce the same failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature using the two-fluid-baths method. This test causes wear-out and is considered destructive. NOTE It is not the

38、intention of this specification to provide prediction models for lifetime evaluation. 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of

39、the referenced document (including any amendments) applies. IEC 60747-1:2006, Semiconductor devices Part 1: General IEC 60747-2:2000, Semiconductor devices Discrete devices and integrated circuits Part 2. Rectifier diodes IEC 60747-6:2000, Semiconductor devices Part 6: Thyristors IEC 60749-3, Semico

40、nductor devices Mechanical and climatic test methods Part 3: External visual examination IEC 60749-23, Semiconductor devices Mechanical and climatic test methods Part 23: High temperature operating life 3 Terms and definitions For the purposes of this document the following terms and definitions app

41、ly. NOTE Further terms and definitions concerning semi-conductor devices are contained in the IEC 60747 and IEC 60748 series. 3.1 3.2 load current current to which the devices are subjected to produce power loss P case temperature T c temperature of the base of the device under test facing the heat

42、sink 6 60749-34 IEC:2010 3.3 3.4 3.5 3.6 3.7 3.8 3.9 sink temperature T s temperature of the heat sink measured in close proximity to the device under test junction temperature excursion T vj difference between maximum and minimum virtual junction temperature of the device under test during one powe

43、r cycle case temperature excursion T c difference between maximum and minimum case temperature during one power cycle on-time time interval while device under test is conducting load current power loss P power dissipation of the devices under test as calculated from current waveform during on- time

44、and from characteristic data in the procurement documents off-time time interval for cooling down cycle period sum of on-time and off-time 4 Test apparatus The apparatus required for this test shall consist of heat sinking for a group of devices or alternatively for each individual device under test

45、 with the purpose of dissipating the forward conduction losses and of controlling on- and off-times. The heat sinking can be selected from natural or forced air convection or liquid cooling. Pre-selected temperature excursions of the device ground plates and of the die junctions, as well as on- and

46、off-times determine heat sinking set-up and parameters. Sockets or other mounting means shall be provided so that reliable electrical contact can be made without excessive heat transfer to the device terminals. Power supplies shall be capable of maintaining the specified operating conditions through

47、out the testing period despite normal variations in line voltage or ambient temperatures. On- and off-switching of load currents should be provided by the test circuit independent of any (gate-) control functions of the devices under test. On- and off-times (cycle period) shall be controlled by moni

48、toring either heat sink T sor case temperature T c . Alternatively, the cycle period can also be controlled by fixed time settings, if appropriate. The test circuit should also be designed so that the existence of abnormal or failed devices does not alter the specified conditions for other units on

49、test (e.g. the latter might be accomplished by exchanging defective units with new ones). Care should be taken to avoid possible damage from transient voltage spikes or other conditions that might result in electrical, thermal or mechanical overstress. 60749-34 IEC:2010 7 5 Procedure When special mounting or heat sinking is required, the details shall be specified in the applicable