1、 IEC 62047-14 Edition 1.0 2012-02 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Micro-electromechanical devices Part 14: Forming limit measuring method of metallic film materials Dispositifs semiconducteurs Dispositifs microlectromcaniques Partie 14: Mthode de mesure des limites
2、de formage des matriaux couche mtallique IEC62047-14:2012 THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2012 IEC, Geneva, Switzerland All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form or by any means, electronic or mechanical,
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16、 IEC 62047-14 Edition 1.0 2012-02 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Micro-electromechanical devices Part 14: Forming limit measuring method of metallic film materials Dispositifs semiconducteurs Dispositifs microlectromcaniques Partie 14: Mthode de mesure des limites
17、 de formage des matriaux couche mtallique INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE Q ICS 31.080.99 PRICE CODE CODE PRIX ISBN 978-2-88912-938-6 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechni
18、que Internationale Warning! Make sure that you obtained this publication from an authorized distributor. Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agr. 2 62047-14 IEC:2012 CONTENTS FOREWORD . 3 1 Scope . 5 2 Normative references . 5 3 Terms, definiti
19、ons and symbols 5 3.1 Terms and definitions 5 3.2 Symbols 6 4 Testing method . 6 4.1 General . 6 4.2 Equipment . 6 4.3 Specimen 7 5 Test procedure and analysis . 8 5.1 Test procedure 8 5.2 Data analysis 9 6 Test report 10 Annex A (informative) Principles of the forming limit diagram . 11 Annex B (in
20、formative) Grid marking method . 13 Annex C (informative) Gripping method . 15 Annex D (informative) Strain measuring method 17 Figure 1 Equipment and tools for forming limit tests . 7 Figure 2 Rectangular specimens with six kinds of aspect ratio . 8 Figure 3 Strain for forming limit measurement 9 F
21、igure 4 Construct the forming limit diagram by plotting the major and minor strains 9 Figure A.1 Forming limit diagram . 11 Figure A.2 Hemispherical punch for forming limit measurement . 11 Figure A.3 Grid for forming limit measurement . 12 Figure A.4 Loading path of the specimen with various aspect
22、 ratios . 12 Figure B.1 Procedure of a photographic grid marking method 13 Figure B.2 Procedure for an inkjet grid marking method . 14 Figure C.1 Gripping of the specimen using a ring shaped die . 15 Figure C.2 Gripping of the specimen using adhesive bonding 16 Figure D.1 Set up for strain measureme
23、nt using digital camera 17 Figure D.2 Example of pixel converting image of deformed specimen 17 Table 1 List of letter symbols . 6 62047-14 IEC:2012 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 14: Forming limit measuring method of metallic
24、 film materials FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standa
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34、 to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 62047-14 has been prepared by subcommittee 47F: Micro-electromechanical systems, of I
35、EC technical committee 47: Semiconductor devices. The text of this standard is based on the following documents: FDIS Report on voting 47F/108/FDIS 47F/118/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This pub
36、lication has been drafted in accordance with the ISO/IEC Directives, Part 2. 4 62047-14 IEC:2012 A list of all parts of IEC 62047 series, published under the general title Semiconductor devices Micro-electromechanical devices, can be found on the IEC website. The committee has decided that the conte
37、nts of this publication will remain unchanged until the stability date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. 62047-14 IEC:20
38、12 5 SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 14: Forming limit measuring method of metallic film materials 1 Scope This part of IEC 62047 describes definitions and procedures for measuring the forming limit of metallic film materials with a thickness range from 0,5 m to 300 m. The
39、 metallic film materials described herein are typically used in electric components, MEMS and micro-devices. When metallic film materials used in MEMS (see 2.1.2 of IEC 62047-1:2005) are fabricated by a forming process such as imprinting, it is necessary to predict the material failure in order to i
40、ncrease the reliability of the components. Through this prediction, the effectiveness of manufacturing MEMS components by a forming process can also be improved, because the period of developing a product can be reduced and manufacturing costs can thus be decreased. This standard presents one of the
41、 prediction methods for material failure in imprinting process. 2 Normative references The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, th
42、e latest edition of the referenced document (including any amendments) applies. IEC 62047-1:2005, Semiconductor devices Micro-electromechanical devices Part 1: Terms and definitions 3 Terms, definitions and symbols 3.1 Terms and definitions For the purposes of this document, the terms and definition
43、s given in IEC 62047-1 and the following apply. 3.1.1 circular grid grid used for measuring the localized deformation of the specimens within the circle 3.1.2 grid patterns pattern marked on the surface of the testing material permitting immediate and direct measurement of the formability for the me
44、tallic film materials Note 1 to entry The grid consists of a pattern of small circles or rectangles. 3.1.3 major axis longest line of the deformed elliptical shape, which passes through both focuses of the ellipse 6 62047-14 IEC:2012 3.1.4 minor axis longest line of the deformed elliptical shape, wh
45、ich is perpendicular to the major axis 3.1.5 square grid grid used for measuring the overall deformation of the testing material 3.2 Symbols For the purpose of this document, letter symbols given in Table 1 are used. Table 1 List of letter symbols Name and designation Letter symbol Grid size initial
46、 diameter of the grid before deformation diameter of the grid along the major axis after deformation diameter of the grid along the minor axis after deformation d0d1d2Strain major strain minor strain 12Equipment, tool and specimen size diameter of the hemispherical punch inner diameter of the die ho
47、le diameter of the bead ring fillet radius of the upper die edge thickness of the testing specimen height of the testing specimen width of the testing specimen Dpunch Ddie Dbead rdet h w 4 Testing method 4.1 General The forming limit diagram (FLD) is determined by pressing the micro film material us
48、ing a hemispherical punch. This pressing process is performed until the film material fractures. The major and minor strains of a deformed specimen can be measured in many ways, for example, by using a digital camera module or an optical device. However, using a digital camera module with sufficient
49、 resolution and a high magnifying power lens is recommended. NOTE See Annex A for principles of forming limit diagram. 4.2 Equipment Micro press equipment is utilized as the loading equipment for FLD tests as described in Figure 1. A hemispherical punch is attached to the micro press to stretch the film material to measure the forming limits of the specimen. Conven
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