IEC 62047-17-2015 Semiconductor devices - Micro-electromechanical devices - Part 17 Bulge test method for measuring mechanical properties of thin films《半导体器件 微型机电装置 第17部分 测量薄膜机械性能的膨胀试验方法》.pdf

1、 IEC 62047-17 Edition 1.0 2015-03 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Micro-electromechanical devices Part 17: Bulge test method for measuring mechanical properties of thin films Dispositifs semiconducteurs Dispositifs microlectromcaniques Partie 17: Mthode dessai de re

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20、IONALE Semiconductor devices Micro-electromechanical devices Part 17: Bulge test method for measuring mechanical properties of thin films Dispositifs semiconducteurs Dispositifs microlectromcaniques Partie 17: Mthode dessai de renflement pour la mesure des proprits mcaniques des couches minces INTER

21、NATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE ICS 31.080.99 ISBN 978-2-8322-2295-9 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale Warning! Make sure that you obtained this publicati

22、on from an authorized distributor. Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agr. colour inside 2 IEC 62047-17:2015 IEC 2015 CONTENTS FOREWORD . 4 1 Scope 6 2 Normative references 6 3 Terms, definitions and symbols 6 3.1 Terms and definitions 6 3.2 S

23、ymbols 7 4 Principle of bulge test 7 5 Test apparatus and environment 8 5.1 General . 8 5.2 Apparatus . 9 5.2.1 Pressuring device 9 5.2.2 Bulge (pressure) chamber 9 5.2.3 Height measurement units . 9 5.3 Test environment 10 6 Specimen 10 6.1 General . 10 6.2 Shape and dimension of specimen 10 6.3 Me

24、asurement of test piece dimension . 10 7 Test procedure and analysis 11 7.1 Test procedure 11 7.2 Data analysis 12 8 Test report . 13 Annex A (informative) Determination of mechanical properties . 14 A.1 General . 14 A.2 Determination of mechanical properties using stress-strain curve . 14 A.3 Deter

25、mination of mechanical properties using analysis of load-deflection 16 Annex B (informative) Deformation measurement techniques . 19 B.1 General . 19 B.2 Laser interferometry technique 19 B.3 Capacitance type measurement 19 Annex C (informative) Example of test piece fabrication: MEMS process . 25 C

26、.1 Test piece fabrication 25 C.2 Measurement of shape of specimen 26 Bibliography 27 Figure 1 Typical example of bulge specimen 7 Figure 2 Membrane window bulged by pressure . 8 Figure 3 Typical example of bulge test apparatus 8 Figure 4 Bulge membrane window shapes . 10 Figure 5 Example of typical

27、pressure-height curve obtained from bulge test . 12 Figure A.1 Determination of biaxial modulus in the stress-strain curve obtained from bulge test 18 Figure B.1 Typical example of laser interferometer configuration . 21 IEC 62047-17:2015 IEC 2015 3 Figure B.2 Typical fringe patterns obtained from l

28、aser Michelson interferometry and ESPI system . 22 Figure B.3 Typical example of the measurement system using a photo detector 23 Figure B.4 Schematic of capacitance bulge tester 23 Figure B.5 Typical example of relationship between bulge height and capacitance change 24 Figure C.1 Example of fabric

29、ation procedure for bulge test piece . 25 Table 1 Symbols and designations of a specimen 7 Table A.1 Examples of various expressions of parameters, C 1and C 2 (), for thin square films 17 Table A.2 Examples of various expressions of parameters, C 1and C 2 (), for thin spherical films . 17 4 IEC 6204

30、7-17:2015 IEC 2015 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 17: Bulge test method for measuring mechanical properties of thin films FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardiz

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40、n to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not

41、be held responsible for identifying any or all such patent rights. International Standard IEC 62047-17 has been prepared by subcommittee 47F: Micro- electromechanical systems, of IEC technical committee 47: Semiconductor devices. The text of this standard is based on the following documents: FDIS Re

42、port on voting 47F/210/FDIS 47F/215/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. IEC 62047-17:2015 IEC 2015 5 A list of all

43、parts in the IEC 62047 series, published under the general title Semiconductor devices Micro-electromechanical devices, can be found in the IEC website. The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC web site under

44、“http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. IMPORTANT The colour inside logo on the cover page of this publication indicates that it contains colours which are consid

45、ered to be useful for the correct understanding of its contents. Users should therefore print this document using a colour printer. 6 IEC 62047-17:2015 IEC 2015 SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 17: Bulge test method for measuring mechanical properties of thin films 1 Scope

46、This part of IEC 62047 specifies the method for performing bulge tests on the free-standing film that is bulged within a window. The specimen is fabricated with micro/nano structural film materials, including metal, ceramic and polymer films, for MEMS, micromachines and others. The thickness of the

47、film is in the range of 0,1 m to 10 m, and the width of the rectangular and square membrane window and the diameter of the circular membrane range from 0,5 mm to 4 mm. The tests are carried out at ambient temperature, by applying a uniformly-distributed pressure to the testing film specimen with bul

48、ging window. Elastic modulus and residual stress for the film materials can be determined with this method. 2 Normative references The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the editi

49、on cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 62047-2:2006, Semiconductor devices Micro-electromechanical devices Part 2: Tensile testing method of thin film materials 3 Terms, definitions and symbols 3.1 Terms and definitions For the purposes of this document, the following terms and defini