1、 IEC 62047-18 Edition 1.0 2013-07 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Micro-electromechanical devices Part 18: Bend testing methods of thin film materials Dispositifs semiconducteurs Dispositifs microlectromcaniques Partie 18: Mthodes dessai de flexion des matriaux en c
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16、ition 1.0 2013-07 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Micro-electromechanical devices Part 18: Bend testing methods of thin film materials Dispositifs semiconducteurs Dispositifs microlectromcaniques Partie 18: Mthodes dessai de flexion des matriaux en couche mince INTE
17、RNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE M ICS 31.080.99 PRICE CODE CODE PRIX ISBN 978-2-8322-0982-0 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale Warning! Make sure that you
18、 obtained this publication from an authorized distributor. Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agr. colourinside 2 62047-18 IEC:2013 CONTENTS FOREWORD . 3 1 Scope . 5 2 Normative references . 5 3 Symbols and designations 6 4 Test piece 6 4.1 De
19、sign of test piece . 6 4.2 Preparation of test piece . 7 4.3 Test piece width and thickness 7 4.4 Storage prior to testing 7 5 Testing method . 7 5.1 General . 7 5.2 Method for mounting of test piece 9 5.3 Method for loading. 9 5.4 Speed of testing 9 5.5 Displacement measurement 9 5.6 Test environme
20、nt . 9 5.7 Data analysis 9 5.8 Material for test pieces 10 6 Test report 10 Annex A (informative) Precautions for the test piece/substrate interface . 11 Annex B (informative) Precautions necessary for the force displacement relationship 12 Figure 1 Schematically shown test piece with substrate . 6
21、Figure 2 Measurement method . 8 Figure A.1 Finishing angle of substrate contact area with test piece . 11 Figure B.1 Cantilever type bend test piece of metallic glass in accordance with IEC 62047-18 12 Figure B.2 Typical example of relationship between force and displacement 13 Table 1 Symbols and d
22、esignation of test piece . 6 62047-18 IEC:2013 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 18: Bend testing methods of thin film materials FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for stan
23、dardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes In
24、ternational Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may particip
25、ate in this preparatory work. International, governmental and non-governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement betwee
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29、ational or regional publication shall be clearly indicated in the latter. 5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any servic
30、es carried out by independent certification bodies. 6) All users should ensure that they have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and members of its technical committees and IEC Natio
31、nal Committees for any personal injury, property damage or other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications. 8) Attention is
32、 drawn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall
33、 not be held responsible for identifying any or all such patent rights. International Standard IEC 62047-18 has been prepared by subcommittee 47F: Micro-electromechanical systems, of IEC technical committee 47: Semiconductor devices. The text of this standard is based on the following documents: FDI
34、S Report on voting 47F/155/FDIS 47F/162/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. A list of all parts in the IEC 62047 se
35、ries, published under the general title Semiconductor devices Micro-electromechanical devices, can be found on the IEC website. 4 62047-18 IEC:2013 The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC web site under “http
36、:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. IMPORTANT The colour inside logo on the cover page of this publication indicates that it contains colours which are considered
37、to be useful for the correct understanding of its contents. Users should therefore print this document using a colour printer. 62047-18 IEC:2013 5 SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 18: Bend testing methods of thin film materials 1 Scope This part of IEC 62047 specifies the m
38、ethod for bend testing of thin film materials with a length and width under 1 mm and a thickness in the range between 0,1 m and 10 m. Thin films are used as main structural materials for Micro-electromechanical Systems (abbreviated as MEMS in this document) and micromachines. The main structural mat
39、erials for MEMS, micromachines, etc., have special features, such as a few micron meter size, material fabrication by deposition, photolithography, and/ or non-mechanical machining test piece. This International Standard specifies the bend testing and test piece shape for micro-sized smooth cantilev
40、er type test pieces, which enables a guarantee of accuracy corresponding to the special features. 2 Normative references The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited a
41、pplies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 62047-6:2009, Semiconductor devices Micro-electromechanical devices Part 6: Axial fatigue testing methods of thin film materials 6 62047-18 IEC:2013 3 Symbols and designations Symbol
42、s and corresponding designations are given in Table 1. Table 1 Symbols and designation of test piece Symbol Unit Designation W m Width of test piece L m Length of test piece S m Thickness of test piece LPALPB, LPCm Distance between loading point, A, B or C, and root of the test piece respectively P
43、N Force m Displacement IZ(m)4Moment of inertia of area E MPa Elastic modulus of cantilever material Figure 1 below shows a typical shape of cantilever beam test piece. 3 4 W L S 1 2 IEC 1712/13 Key 1 Top view 3 Substrate 2 Side view 4 Test piece Figure 1 Schematically shown test piece with substrate
44、 4 Test piece 4.1 Design of test piece The test pieces are of a shape of cantilever beam as shown in Figure 1 and the shape of their cross-section shall be simple , in order to facilitate calculation of the moment of inertia of area. The shape of the cross-section of the test piece should be simple,
45、 for example rectangular or trapezoid. The relation between test piece length (L) of the parallel part of the test piece, the width (W) and thickness (S) should be 10 L/W 5 and 100 L/S 10. The fixed end of the test piece shall be placed within a substrate as shown in Figure 1. Contact point of the t
46、est piece with substrate is important to avoid plastic deformation and/or 62047-18 IEC:2013 7 fracture at the contact point of test piece root and substrate because of stress concentration (see Annex A). When a different shape of test piece is used which elastic deformation behavior does not follow
47、Equation (1), the different shape of test piece and the equation in place of Equation (1) shall be recorded. In order to minimize the influence of size, the size of test piece should have the same order as that of the objective device component. 4.2 Preparation of test piece The test piece should be
48、 fabricated using the same process as when the thin film is applied to actual devices, because the mechanical properties depend on the fabrication processes. The test piece also shall be fabricated following the procedures specified in IEC 62047-6:2009, Clause 4.2 Preparation of test piece. The subs
49、trate removal process should be carefully chosen to prevent damaging the supporting part of the substrate (see Annex A) and the supporting part of the test piece. The thin film, which has internal stress distribution along the thickness, cannot be tested due to curling after release from the substrate. 4.3 Test piece width and thickness The width and thickness of each test piece shall be me
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