1、 IEC/TR 62632 Edition 1.0 2013-09 TECHNICAL REPORT Nanoscale electrical contacts and interconnects IEC/TR 62632:2013(E) THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2013 IEC, Geneva, Switzerland All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or ut
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9、 PRICE CODE ISBN 978-2-8322-1113-7 Registered trademark of the International Electrotechnical Commission Warning! Make sure that you obtained this publication from an authorized distributor. 2 TR 62632 IEC:2013(E) CONTENTS FOREWORD . 4 INTRODUCTION . 6 1 Scope 9 2 Normative references 9 3 Terms and
10、definitions 9 4 Framework of the technical report: . 10 5 Analysis of state-of-the-art nanoscale contacts and nano-interconnect technologies 12 5.1 Nanotubes and nanowires 12 Type and configuration of the nanoscale contacts formed . 12 5.1.1Requirements of the nanoscale contacts in products. 12 5.1.
11、2Fabrication technologies, processes, and process controls 5.1.3 used to make the nanoscale contacts . 13 Characterization techniques used to quantify a nanoscale 5.1.4 contact . 14 Functionality and performance of the nanoscale contacts . 14 5.1.5Reliability of the nanoscale contacts in the product
12、 . 17 5.1.6Expectations of when the product and the associated 5.1.7 nanoscale contacts will reach the market 17 5.2 Via interconnects using CNTs and CNFs 17 Type and configuration of the nanoscale interconnects formed . 17 5.2.1Requirements of the nanoscale interconnects in products . 17 5.2.2Fabri
13、cation technologies, processes, and process controls 5.2.3 used to make the nanoscale interconnects . 17 Characterization techniques used to quantify a nanoscale 5.2.4 interconnect 18 Functionality and performance of the nanoscale interconnects . 18 5.2.5Reliability of the nanoscale interconnects in
14、 the product . 19 5.2.6Expectations of when the product and the associated 5.2.7 nanoscale contacts will reach the market 19 5.3 Surface (lateral) interconnects using CNTs and CNFs 19 Type and configuration of the nanoscale interconnects formed . 19 5.3.1Requirements of nanoscale interconnects in pr
15、oducts . 20 5.3.2Fabrication technologies, processes, and process controls 5.3.3 used to make the nanoscale interconnects . 20 Characterization techniques used to quantify a nanoscale 5.3.4 interconnects 20 Functionality and performance of the nanoscale interconnects . 20 5.3.5Reliability of the nan
16、oscale interconnects in the product . 22 5.3.6Expectations of when the product and the associated 5.3.7 nanoscale contacts will reach the market 22 5.4 Graphene . 22 General 22 5.4.1Type and configuration of the nanoscale contacts formed: 23 5.4.2Requirements of the nanoscale contacts in the product
17、s: 24 5.4.3Fabrication technologies, processes, and process controls 5.4.4 used to make the nanoscale contacts: 24 Characterization techniques used to quantify a nanoscale 5.4.5 contact . 27 TR 62632 IEC:2013(E) 3 Functionality and performance of the nanoscale contacts . 27 5.4.6Reliability of the n
18、anoscale contacts in the product . 27 5.4.7Expectations of when the product and the associated 5.4.8 nanoscale contacts will reach the market 28 5.5 Organic devices . 29 5.6 Nanoscale contacts to GaAs Functionality and performance . 29 5.7 Magnetic nanoscale contacts . 29 Type and configuration of t
19、he nanoscale contacts formed . 29 5.7.1Fabrication technologies, processes, and process controls 5.7.2 used to make the nanoscale contacts . 30 6 Standardization needs to support commercialisation 30 7 Summary . 31 Bibliography 34 4 TR 62632 IEC:2013(E) INTERNATIONAL ELECTROTECHNICAL COMMISSION _ NA
20、NOSCALE ELECTRICAL CONTACTS AND INTERCONNECTS FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on a
21、ll questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publ
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31、However, a technical committee may propose the publication of a technical report when it has collected data of a different kind from that which is normally published as an International Standard, for example “state of the art“. IEC 62632, which is a technical report, has been prepared by IEC technic
32、al committee 113: Nanotechnology standardization for electrical and electronic products and systems. The text of this technical report is based on the following documents: Enquiry draft Report on voting 113/135/DTR 113/167/RVC Full information on the voting for the approval of this technical report
33、can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. TR 62632 IEC:2013(E) 5 The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on t
34、he IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. A bilingual version of this publication may be issued at a later date. 6 TR 62632 IEC:2013(E) INTROD
35、UCTION The purpose of this technical report is to assess the current status of nanoscale contacts and interconnects, and to provide a basis for establishing international standards with the goal of accelerating innovation in nano-electrotechnology. Nanoscale contacts and interconnects are expected t
36、o constitute challenges for many applications of nano-electrotechnology. The commercial success of many nanoscale electrotechnical subassemblies for electrical, optical, and magnetic products and systems will require contacts or connections to micro- and macroscale devices and systems. Present instr
37、umentation used to characterize and view nanoscale contacts in three dimensions is not adequate for accelerating innovation and therefore commercialization. The standards and measurement methods associated with such instrumentation, and the theories used to interpret measurement results make it diff
38、icult to assess performance, reliability, and durability of subassemblies with enhanced functionalities based on nano-electrotechnology. Nano-electrotechnology stakeholders tend to prefer those standards for nanoscale contacts that are technology- and material-neutral. Promoting standards that are t
39、oo nano- electromaterial- and process-specific may impede creativity and innovation. Those developing nano-electrotechnology standards will face challenges to achieve balances among standards for nanoscale contacts that are applicable to many applications (DC, AC, and RF) and that are applicable to
40、only a few specific materials with limited applications (e.g. digital). Nano-electrotechnology is part of nanotechnology. They are often cross-sectional technologies with the potential for many cross-disciplinary applications. From the perspective of the International Electrotechnical Commission (IE
41、C), nano-electrotechnologies include the following areas at the nanoscale: nanostructured sensors; nano-electronics, nano-materials, and nano-devices; optoelectronics; optical materials and devices; organic (opto)-electronics; magnetic materials and devices; radio frequency devices, components and s
42、ystems; electrodes with nanostructured surfaces; electrotechnical properties of nanotubes/nanowires; analytical equipment and techniques for measurement of electrotechnical properties; patterning equipment and techniques; masks and lithography; performance, durability, and reliability assessment for
43、 nanoelectronics; fuel cells; and bio-electronic applications. The economic significance of nanoscale contacts and interconnects is considerable. Introducing integrated circuits (IC) with higher density increases computing speed and reduces the cost of components for computing and a wide range of ap
44、plications. If the rate of technology innovation were to slow dramatically due perhaps to the performance, reliability, and durability of nanoscale contacts, there could be a slowing in the introduction of new computing and consumer electronics. This could in turn reduce growth in the semiconductor
45、sector and could have a negative ripple effect in other sectors that depend on semiconductors. Such a decline could have considerable productivity implications for all global economic sectors that rely on semiconductors. Furthermore, if the nanoscale contact processes have unacceptable variations, t
46、he yield for circuits may become too low for traditional business models. This would dramatically increase the cost of products, make the new technology more costly, and reverse the 4-decade-old deflationary trend in the semiconductor industry namely, the substantial decrease in cost per function wi
47、th each new technology generation. The development of standards for nano-scale contacts and interconnects will often occur in the context of one or more of the following business models for nano-technologies: a) Traditional business model Research and development supported in part by grants lead to
48、new technologies for prototype product development followed by building manufacturing capacity, deployment, and commercialization. This model may not be appropriate for nano-electrotechnologies because it is very capital intensive and takes too long for commercialization with investors, who often wa
49、nt financial success (positive returns on their investments) quickly. TR 62632 IEC:2013(E) 7 b) Solution-looking-for-a-problem-or-market business model Research and development leads to new technology that may have phenomenal commercial success or more likely may remain as an interesting technology sitting on a shelf. Commercialization challenges include, in part, the following: 1) it usually takes a very long time to integrate a specific nano-electromaterial into large- scale industrial processes that customers apprecia
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