1、 IEC TR 63072-1 Edition 1.0 2017-05 TECHNICAL REPORT Photonic integrated circuits Part 1: Introduction and roadmap for standardization IEC TR 63072-1:2017-05(en) colour inside THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2017 IEC, Geneva, Switzerland All rights reserved. Unless otherwise specif
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10、wish to give us your feedback on this publication or need further assistance, please contact the Customer Service Centre: csciec.ch. IEC TR 63072-1 Edition 1.0 2017-05 TECHNICAL REPORT Photonic integrated circuits Part 1: Introduction and roadmap for standardization INTERNATIONAL ELECTROTECHNICAL CO
11、MMISSION ICS 33.180.99 ISBN 978-2-8322-4279-7 Registered trademark of the International Electrotechnical Commission Warning! Make sure that you obtained this publication from an authorized distributor. colour inside 2 IEC TR 63072-1:2017 IEC 2017 CONTENTS FOREWORD . 5 1 Scope 7 2 Normative reference
12、s 7 3 Terms and definitions 7 4 Photonic integrated circuit (PIC) 9 4.1 Overview. 9 4.2 PIC families 11 4.2.1 General . 11 4.2.2 Silicon photonics . 12 4.2.3 III-V photonics . 12 4.2.4 Silica and silicon nitride PICs. 12 4.3 Manufacturing capabilities. 13 4.4 Global market . 13 4.5 Global government
13、 investment in PIC research and development . 13 4.5.1 General . 13 4.5.2 United States of America . 13 4.5.3 Europe. 13 4.5.4 Japan 13 5 Silicon photonics . 14 5.1 Overview. 14 5.2 Integration schemes 14 5.2.1 General . 14 5.2.2 Heterogeneous integration . 15 5.2.3 Homogenous integration 15 5.3 Non
14、-linear behaviour . 15 6 III-V photonics . 15 6.1 Indium phosphide (InP) photonics . 15 7 PIC transceiver A simple example 17 7.1 Overview. 17 7.2 Transmitter section . 17 7.3 Receiver section . 18 8 Optical sources 19 8.1 Overview. 19 8.2 Advances in III-V integration onto silicon PICs 19 8.3 Verti
15、cal cavity surface emitting lasers (VCSELs) . 20 9 Optical receivers 20 10 Modulators 21 10.1 Overview. 21 10.2 Common modulator structures 21 10.3 Plasma dispersion effect . 22 10.4 Plasmonics . 23 10.5 Silicon organic hybrid 23 11 Switches 24 11.1 Overview. 24 11.2 Mach-Zehnder interferometers (MZ
16、I) . 24 11.3 Micro-ring resonator (MRR) . 24 IEC TR 63072-1:2017 IEC 2017 3 11.4 Double-ring assisted MZI (DR-MZI) . 25 12 3D integration 25 12.1 Optochip . 25 12.2 Through-silicon-vias (TSVs) 25 12.3 Hybrid integration process example 26 12.4 Flip-chip bonding 26 12.5 State of the art in 3D researc
17、h and development . 27 13 Commercial state of the art 27 13.1 Overview. 27 13.2 Luxtera . 27 13.3 Intel 28 13.4 Mellanox . 28 13.5 Oracle . 29 13.6 IBM . 29 13.7 Photonics Electronics Technology Research Association (PETRA) . 29 14 PIC coupling interfaces 30 14.1 Overview. 30 14.2 Grating coupler .
18、30 14.3 Adiabatic coupling . 33 14.4 Butt coupling . 35 14.5 Orthogonal chip-to-fibre coupling 35 15 Electrical interface . 36 16 Packaging . 37 17 Standardization roadmap . 37 Bibliography 39 Figure 1 Examples of PICs 1 11 Figure 2 Optical beam forming network fabricated in TriPleX (silicon nitride
19、) 12 Figure 3 Typical silicon waveguides 6 14 Figure 4 Heterogeneous integration by flip chip and copper pillars . 15 Figure 5 Indium phosphide PIC with many structures, including AWG 16 Figure 6 Combined InP and TriPleX microwave photonic beam-forming network 17 Figure 7 Schematic of four channel P
20、IC transceiver by Luxtera 6 . 18 Figure 8 Schematic view of 3D assembly of PIC + EIC electro-optical assembly 6 . 20 Figure 9 Example of Ge-on-Si photodetector formed by germanium selective epitaxy 6 21 Figure 10 High speed PN modulator 6 22 Figure 11 PETRA optical I/O core chip modulation scheme 23
21、 Figure 12 Silicon organic hybrid . 24 Figure 13 4 x 4 switching matrix PIC attached to PCB with wire bonds on the EU FP7 PhoxTroT project . 25 Figure 14 EU FP7 project PhoxTroT 3D integrated optochip concept . 26 Figure 15 LIFT principle . 27 Figure 16 PETRA optical I/O core performance at 25 Gb/s
22、. 29 Figure 17 Examples of vertical grating couplers 6 31 Figure 18 Coupling efficiency of single polarization grating coupler (SPGC) at 1 310 nm and 1 490 nm 91 . 32 4 IEC TR 63072-1:2017 IEC 2017 Figure 19 Composite coupling interfaces on PETRA optical I/O core 32 Figure 20 Assembly for adiabatic
23、optical coupling between Si photonics chip and SM polymer waveguide . 33 Figure 21 Flip-chipped silicon photonic chip onto polymer waveguide substrate using adiabatic coupling . 34 Figure 22 Bidirectional optical coupling between SOI waveguides and single polymer waveguides . 35 Figure 23 Design of
24、the mirror plug assembly 36 Figure 24 Typical operative framework of silicon-photonics modules 37 Figure 25 PIC standardization roadmap . 38 IEC TR 63072-1:2017 IEC 2017 5 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ PHOTONIC INTEGRATED CIRCUITS Part 1: Introduction and roadmap for standardization FO
25、REWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the e
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35、ty that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. The main task of IEC technical committees is to prepare International Standards. However, a technical committee may propose the p
36、ublication of a technical report when it has collected data of a different kind from that which is normally published as an International Standard, for example “state of the art“. IEC TR 62072-1, which is a Technical Report, has been prepared by subcommittee 86C: Fibre optic systems and active devic
37、es, of IEC technical committee 86: Fibre optics. The text of this Technical Report is based on the following documents: Enquiry draft Report on voting 86C/1428/DTR 86C/1441/RVDTR Full information on the voting for the approval of this technical report can be found in the report on voting indicated i
38、n the above table. 6 IEC TR 63072-1:2017 IEC 2017 This document has been drafted in accordance with the ISO/IEC Directives, Part 2. A list of all parts in the IEC 63072-1 series, published under the general title Photonic integrated circuits, can be found on the IEC website. The committee has decide
39、d that the contents of this document will remain unchanged until the stability date indicated on the IEC website under “http:/webstore.iec.ch“ in the data related to the specific document. At this date, the document will be reconfirmed, withdrawn, replaced by a revised edition, or amended. A bilingu
40、al version of this publication may be issued at a later date. IMPORTANT The colour inside logo on the cover page of this publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore print this document using a
41、colour printer. IEC TR 63072-1:2017 IEC 2017 7 PHOTONIC INTEGRATED CIRCUITS Part 1: Introduction and roadmap for standardization 1 Scope This part of IEC 63072, which is a Technical Report, provides an introduction to photonic integrated circuits (PICs) and describes a roadmap for the standardizatio
42、n of PIC technology over the next decade. NOTE The trademarks and trade names mentioned in this document are given for the convenience of users of this document; this does not constitute an endorsement by IEC of these companies. 2 Normative references There are no normative references in this docume
43、nt. 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. ISO and IEC maintain terminological databases for use in standardization at the following addresses: IEC Electropedia: available at http:/www.electropedia.org/ ISO Online browsing platform: avai
44、lable at http:/www.iso.org/obp 3.1 photonic integrated circuit PIC integrated circuit that contains optical structures to guide and process optical signals 3.2 III-V three-five compound semiconductor formed of materials from the third and fifth column of the periodic table EXAMPLE 1 Indium phosphide
45、 EXAMPLE 2 Gallium arsenide 3.3 through-silicon-via TSV metallised hole (via) through a silicon wafer enabling electrical conductivity from one surface of the silicon to the other 3.4 silicon photonics structure or system of structures fabricated into a silicon wafer to guide light and enable passiv
46、e and active optical processes to be carried out at the integrated circuit level 8 IEC TR 63072-1:2017 IEC 2017 3.5 silicon-on-insulator SOI structure or system of structures fabricated into a silicon wafer to guide light and enable passive and active optical processes to be carried out at the integ
47、rated circuit level 3.6 vertical cavity surface emitting laser VCSEL semiconductor laser diode with direction of laser emission perpendicular to top surface 3.7 Mach-Zehnder interferometer MZI waveguide structure whereby an incident optical signal is split into two paths and allowed to recombine int
48、o an output signal and on which the phase variance between the two recombined signals can be manipulated to allow modulation of the output signal or switching between two or more input and output signals 3.8 ring resonator closed optical path in which the optical radiation circulates in an optical l
49、oop in the same direction Note 1 to entry: Standing waves are possible to exist at particular wavelengths. 3.9 micro-ring resonator MRR closed ring resonator waveguide structure on a PIC Note 1 to entry: When located near a waveguide, the MRR will selectively couple out of the waveguide optical radiation only at the wavelengths m , which satisfy the following resonance condition: MRR optical path length = 2 n eff= m m , where n e
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