IEC 60749-44-2016 Semiconductor devices - Mechanical and climatic test methods - Part 44 Neutron beam irradiated single event effect (SEE) test method for semic.pdf

1、 IEC 60749-44 Edition 1.0 2016-07 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Mechanical and climatic test methods Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices Dispositifs semiconducteurs Mthodes dessais mcaniques et climatiqu

2、es Partie 44: Mthode dessai des effets dun vnement isol (SEE) irradi par un faisceau de neutrons pour des dispositifs semiconducteurs IEC 60749-44:2016-07(en-fr) colour inside THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2016 IEC, Geneva, Switzerland All rights reserved. Unless otherwise specif

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20、NATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Mechanical and climatic test methods Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices Dispositifs semiconducteurs Mthodes dessais mcaniques et climatiques Partie 44: Mthode dessai des effets

21、dun vnement isol (SEE) irradi par un faisceau de neutrons pour des dispositifs semiconducteurs INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE ICS 31.080.01 ISBN 978-2-8322-3541-6 Registered trademark of the International Electrotechnical Commission Marque dpose

22、de la Commission Electrotechnique Internationale Warning! Make sure that you obtained this publication from an authorized distributor. Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agr. colour inside 2 IEC 60749-44:2016 IEC 2016 CONTENTS FOREWORD . 4 1 S

23、cope 6 2 Normative references. 6 3 Terms and definitions 6 4 Test apparatus 9 4.1 Measurement equipment . 9 4.2 Radiation source . 10 4.3 Test sample 10 5 Procedure neutron irradiated soft error test 10 5.1 Surface preparation . 10 5.2 Power supply voltage 10 5.3 Ambient temperature . 11 5.4 Core cy

24、cle time . 11 5.5 Data pattern 11 5.6 Number of measurement samples 11 5.7 Calculations for time required in the beam . 11 6 Evaluation . 11 6.1 Measurement and failure rate estimation . 11 6.2 Determination of MCU and MBU cross sections . 12 6.3 Determination of device FIT (event rate) from cross s

25、ection . 12 7 Summary . 12 Annex A (informative) Additional information for the applicable procurement specification 13 A.1 General . 13 A.2 Description of the beam source . 13 A.3 Description of the sample and test vehicle . 13 A.3.1 Sample size . 13 A.3.2 Vehicle description . 13 A.4 Test descript

26、ion 14 A.5 Test results . 14 Annex B (informative) White neutron test apparatus . 16 Annex C (informative) Failure rate calculation . 18 C.1 An influence of soft error for actual semiconductor devices 18 C.1.1 General . 18 C.1.2 Duty derating . 18 C.1.3 Utility derating 18 C.1.4 Critically derating

27、 19 C.2 Failure rate calculation including derating 19 Bibliography . 20 Figure B.1 Typical white neutron spectra with different shield (polyethylene) thickness 16 Figure B.2 Typical neutron spectrum 17 Figure B.3 Comparison of LANSCE (WNR) and TRIUMF neutron spectra with terrestrial neutron spectr

28、um 17 IEC 60749-44:2016 IEC 2016 3 Figure C.1 Schematic image of duty derating 18 Figure C.2 Schematic image of memory effective area for utility derating 19 4 IEC 60749-44:2016 IEC 2016 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MECHANICAL AND CLIMATIC TEST METHODS Part 44: N

29、eutron beam irradiated single event effect (SEE) test method for semiconductor devices FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is t

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39、e for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 60749-44 has

40、been prepared by IEC technical committee 47: Semiconductor devices. The text of this standard is based on the following documents: FDIS Report on voting 47/2303/FDIS 47/2312/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the abo

41、ve table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. IEC 60749-44:2016 IEC 2016 5 A list of all the parts in the IEC 60749 series, published under the general title Semiconductor devices Mechanical and climatic test methods, can be found on the IEC website.

42、The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC website under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revis

43、ed edition, or amended. IMPORTANT The colour inside logo on the cover page of this publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore print this document using a colour printer. 6 IEC 60749-44:2016 IE

44、C 2016 SEMICONDUCTOR DEVICES MECHANICAL AND CLIMATIC TEST METHODS Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices 1 Scope This part of IEC 60749 establishes a procedure for measuring the single event effects (SEEs) on high density integrated circuit s

45、emiconductor devices including data retention capability of semiconductor devices with memory when subjected to atmospheric neutron radiation produced by cosmic rays. The single event effects sensitivity is measured while the device is irradiated in a neutron beam of known flux. This test method can

46、 be applied to any type of integrated circuit. NOTE 1 Semiconductor devices under high voltage stress can be subject to single event effects including SEB, single event burnout and SEGR single event gate rupture, for this subject which is not covered in this document, please refer to IEC 62396-4 2.

47、NOTE 2 In addition to the high energy neutrons some devices can have a soft error rate due to low energy (1 eV) thermal neutrons. For this subject which is not covered in this document, please refer to IEC 62396-5 3. 2 Normative references The following documents, in whole or in part, are normativel

48、y referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. None. 3 Terms and definitions For the purposes of this document, th

49、e following terms and definitions apply. 3.1 critical charge Qcrit smallest charge that will cause a SEE if injected or deposited in the sensitive volume 3.2 single-event upset SEU in a semiconductor device when the radiation absorbed by the device is sufficient to change a cells logic state Note 1 to entry: After a new write cycle, the original state can be recovered. 3.3 multiple bi