IEEE C62 11-2012 en Metal-Oxide Surge Arresters for AC Power Circuits ( 1 kV)《交流电(AC)电源电路用金属氧化物放电管IEEE标准(1 kV)》.pdf

1、IEEE Standard for Metal-Oxide Surge Arresters for AC Power Circuits (1 kV) Sponsored by the Surge Protective Devices Committee IEEE 3 Park Avenue New York, NY 10016-5997 USA 20 December 2012 IEEE Power and Energy Society IEEE Std C62.11-2012(Revision of IEEE Std C62.11-2005)IEEE Std C62.11-2012 (Rev

2、ision of IEEE Std C62.11-2005) IEEE Standard for Metal-Oxide Surge Arresters for AC Power Circuits (1 kV) Sponsor Surge Protective Devices Committee of the IEEE Power and Energy Society Approved 19 October 2012 IEEE-SA Standards Board Abstract: Metal-oxide surge arresters (MOSAs) designed to repeate

3、dly limit the voltage surges on 48 Hz to 62 Hz power circuits ( 1000 V) by passing surge discharge current and automatically limiting the flow of system power current are addressed in this standard. This standard applies to devices for separate mounting and to devices supplied integrally with other

4、equipment. The tests demonstrate that an arrester is able to survive the rigors of reasonable environmental conditions and system phenomena while protecting equipment and/or the system from damaging overvoltages caused by lightning, switching, and other undesirable surges. Keywords: discharge curren

5、t, discharge voltage, duty-cycle voltage rating, IEEE C62.11, lightning protection, maximum continuous operating voltage, MCOV, metal-oxide surge arrester, MOSA, surge arrester, varistor The Institute of Electrical and Electronics Engineers, Inc. 3 Park Avenue, New York, NY 10016-5997, USA Copyright

6、 2012 by The Institute of Electrical and Electronics Engineers, Inc. All rights reserved. Published 20 December 2012. Printed in the United States of America. IEEE is a registered trademark in the U.S. Patent +1 978 750 8400. Permission to photocopy portions of any individual standard for educationa

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18、egal validity or scope of Patents Claims, or determining whether any licensing terms or conditions provided in connection with submission of a Letter of Assurance, if any, or in any licensing agreements are reasonable or non-discriminatory. Users of this standard are expressly advised that determina

19、tion of the validity of any patent rights, and the risk of infringement of such rights, is entirely their own responsibility. Further information may be obtained from the IEEE Standards Association. Copyright 2012 IEEE. All rights reserved. vi Participants At the time this IEEE standard was complete

20、d, the 3.3.11 Working Group had the following membership: Michael G. Comber, Chair Dilip Biswas Steve Brewer Mike Champagne Tom Field Reinhard Goehler Christine Goldsworthy Steve Hensley Ray Hill Volker Hinrichsen Bengt Johnnerfelt Jeff Kester Joseph L. Koepfinger Chris Kulig Senthil Kumar Gerald Le

21、e Denny Lenk Jody Levine Paul Lindemulder Brian McGowan Mark McVey Iuda Morar Patrick OConnor Joe Osterhout Emanuel Petrache Joe Osterhout Emanuel Petrache Mike Ramarge Tom Rozek Tim Smity Keith Stump Eva Tarasiewicz Rao Thallam Mike Valenza Arnie Vitols Larry Vogt James Wilson Jon WoodwortThe follo

22、wing members of the individual balloting committee voted on this standard. Balloters may have voted for approval, disapproval, or abstention. Satish Aggarwal Roy Alexander Saleman Alibhay Ficheux Arnaud Carlo Arpino Senthil Kumar Asok Kumar George Becker W. J. Bill Bergman Steven Bezner Wallace Bind

23、er Thomas Bishop Thomas Blackburn William Bloethe Kenneth Bow Chris Brooks Gustavo Brunello Thomas Callsen Paul Cardinal Michael Champagne Arvind K Chaudhary Weijen Chen Bill Chiu Robert Christman Michael Comber Stephen Conrad Jerry Corkran Chuanyou Dai Gary Donner Randall Dotson Edgar Dullni Gearol

24、d O. H. Eidhin Fred Elliott C. Erven Dan Evans Jorge Fernandez Daher Doaa Galal David Gilmer Waymon Goch Jalal Gohari Edwin Goodwin James Graham Thomas Grebe Randall Groves John Harder Richard Harp David Harris Wolfgang Haverkamp Timothy Hayden Jeffrey Helzer William Henning Steven Hensley Raymond H

25、ill Ronald Hotchkiss Charles Jensen Farris Jibril Bengt Johnnerfelt Andrew Jones Laszlo Kadar John Kay Gael Kennedy Sheldon Kennedy Jeffrey Kester Yuri Khersonsky James Kinney Joseph L. Koepfinger Boris Kogan Jim Kulchisky Christopher Kulig Chung-Yiu Lam Michael Lauxman Dennis Lenk Paul Lindemulder

26、Greg Luri Michael Maytum Omar Mazzoni William McBride Mark Mcvey Georges Montillet Charles Morgan Jerry Murphy Ryan Musgrove Arthur Neubauer Michael S. Newman Charles Ngethe Joe Nims Ted Olsen Lorraine Padden Mirko Palazzo Donald Parker Bansi Patel David Peelo Emanuel Petrache Alvaro Portillo Lewis

27、Powell Gustav Preininger Iulian Profir Michael Ramarge Reynaldo Ramos John Randolph Michael Roberts Charles Rogers John Rossetti Marnie Roussell Thomas Rozek Steven Sano Bartien Sayogo Devki Sharma Stephen Shull Gil Shultz Michael Smalley James Smith Copyright 2012 IEEE. All rights reserved. vii Jer

28、emy Smith Jerry Smith Wayne Stec Gary Stoedter Keith Stump John Sullivan William Taylor Peter Tirinzoni Donald Turner Eric Udren Michael Valenza John Vergis Loren Wagenaar Peter Walsh Daniel Ward Yingli Wen Donald Wengerter Steven Whisenant Kenneth White James Wilson John Wilson Jonathan Woodworth J

29、ian Yu Janusz Zawadzki When the IEEE-SA Standards Board approved this standard on 19 October 2012, it had the following membership: Richard H. Hulett, Chair John Kulick, Vice Chair Robert M. Grow, Past Chair Konstantinos Karachalios, Secretary Satish Aggarwal Masayuki Ariyoshi Peter Balma William Ba

30、rtley Ted Burse Clint Chaplin Wael Diab Jean-Philippe Faure Alexander Gelman Paul Houz Jim Hughes Young Kyun Kim Joseph L. Koepfinger* John Kulick David J. Law Thomas Lee Hung Ling Oleg Logvinov Ted Olsen Gary Robinson Jon Walter Rosdahl Mike Seavey Yatin Trivedi Phil Winston Yu Yuan *Member Emeritu

31、s Also included are the following nonvoting IEEE-SA Standards Board liaisons: Richard DeBlasio, DOE Representative Michael Janezic, NIST Representative Krista Gluchoski IEEE Project Manager, Professional Services Michelle Turner IEEE Standards Program Manager, Document Development Malia Zaman IEEE S

32、tandards Program Manager, Technical Program Development Copyright 2012 IEEE. All rights reserved. viii Introduction This introduction is not part of IEEE Std C62.11-2012, IEEE Standard for Metal-Oxide Surge Arresters for AC Power Circuits (1 kV). Metal-oxide surge arresters (MOSAs) described in this

33、 standard represent the most predominant surge arrester technology applied on ac power systems above 1 kV. This standard presents minimum criteria for the testing of such surge arresters. Matters of application of this type of surge arrester are covered in IEEE Std C62.22.aTesting and application of

34、 older technology silicon carbide surge arresters are covered in IEEE Std C62.1 and ANSI C62.2, respectively. For testing and application of surge protective devices for use in low-voltage circuits (1 kV and below), other standards in the C62 series are available. IEEE Std C62.11-2012 contains the f

35、ollowing significant changes from IEEE Std C62.11-2005: Revision of subclause 8.2 Discharge-voltage characteristics test (formerly 8.3) to: (1) remove references to shunt-gapped arresters, (2) modify method of determining front-of-wave discharge voltage, and (3) add requirements for verifying that p

36、ublished arrester discharge voltages are not exceeded Removal of optional 5000 h test from subclause 8.7 Accelerated aging test of polymer-housed arresters with exposure to salt fog Revision of subclause 8.8 Contamination test to apply only to multi-unit station or intermediate class arresters Revis

37、ion of subclause 8.10 Radio-influence (RIV) test to limit the test to high voltage arresters above 90 kV rated voltage, and to add requirements for evaluation of RIV over a range of voltages Revision of subclause 8.12 High-current short-duration withstand test to change allowed delay between the sec

38、ond high-current impulse and application of recovery voltage from 5 min to 100 ms Deletion of subclause 8.13.1 Transmission line discharge test for station and intermediate arresters (replaced by new Switching surge energy capability verification test), and renumbering of remaining sub-clauses under

39、 subclause 8.13 Revision of subclause 8.13.1 (formerly 8.13.2) Low-current long-duration test for distribution arresters to change the 18-discharge application from three groups of six to six groups of three, and to eliminate the subsequent heating of the sample and application of discharges 19 and

40、20 Addition of new Switching surge energy capability verification test as subclause 8.14 Addition of new Single impulse withstand capability test as Clause 15 Revision of subclause 8.16 Duty-cycle test (formerly 8.14) to remove point-on-wave timing of initiating surges for gapless arresters Revision

41、 of subclause 8.17 Temporary overvoltage (TOV) test (formerly subclause 8.15) to reduce the number of test samples from five to four, and to require one test per sample instead of five tests per sample at each of the selected time ranges Deletion of former subclauses 8.16 Pressure-relief test for st

42、ation and intermediate arresters, 8.17 Short-circuit test for porcelain-housed distribution arresters, and 8.18 Short-circuit test for polymer-housed distribution arresters Addition of short circuit test procedure of IEEE Std C62.11a-2008 as new subclause 8.18, to replace deleted former subclauses 8

43、16, 8.17, and 8.18 aInformation on references can be found in Clause 2. Copyright 2012 IEEE. All rights reserved. ix Revision of subclause 8.19 Failure mode test for liquid-immersed arresters to modify requirements for sample preparation to align with requirements for other arresters prescribed in

44、new subclause 8.18 Revision of subclause 8.19 Deadfront arrester failure mode test (formerly subclause 8.20) to add sample preparation requirements and modify procedure requirements to align with requirements for other arresters prescribed in new subclause 8.1 Removal of Clause 9 Conformance tests A

45、ddition of new Annex A to provide example of use of the procedure of the discharge voltage test Removal of Annex C Accelerated aging tests for polymer-housed arresters Addition of new Annex D Rationale for tests prescribed by this standard Less significant changes include: Change of title of Clause

46、1 from Scope to Overview, add 1.1 Scope and 1.2 Purpose Removal of definitions for terms not used in the standard. Renumbering of tests beyond subclause 8.13 to accommodate addition of new tests and deletion of old tests, and renumbering of clauses beyond Clause 8 to accommodate removal of previous

47、Clause 9 Replacement of all instances of “valve element” with “varistor;” added definition for varistor Minor editorial changes to correct grammatical and typographical errors Copyright 2012 IEEE. All rights reserved. x Contents 1. Overview 1 1.1 Scope . 1 1.2 Purpose 1 2. Normative references 2 3.

48、Definitions 3 4. Service conditions 8 4.1 Usual service conditions 8 4.2 Unusual service conditions 9 5. Standard voltage ratings: duty-cycle voltage and maximum continuous operating voltage (MCOV) . 10 6. Performance characteristics and tests . 10 7. Test requirements . 12 7.1 Complete arrester tes

49、t samples 12 7.2 Prorated section . 12 7.3 Test measurements 16 7.4 Impulse test-wave tolerances . 16 7.5 Power-frequency test voltages . 16 8. Design tests . 16 8.1 Arrester insulation withstand test 16 8.2 Discharge-voltage characteristics test 19 8.3 Power-frequency sparkover test for arresters equipped with gaps . 22 8.4 Impulse protective level voltage-time characteristic test for arresters equipped with gaps . 22 8.5 Accelerated aging test of varistors . 26 8.6 Accelerated aging test of polymer-ho