1、Q / GDW ICS CCS Q/GDW 498 2010 GuideforConditionEvaluationofHVDCConverterValve 2010 -12-27 2010-12-27 Q/GDWQ / GDW I II 1 1 2 1 3 1 4 2 5 3 A 5 B 8 9Q / GDW II A B Q / GDW 1 660kV GB/T 13498 GB/T 20990.1 1 IEC 60700-1 1998 GB/T 20992 GB/T 21420 DL/T 664 Q/GDW168 criteria minor criteria major criteri
2、a component conditionofcomponent normalcondition attentive condition abnormalcondition Q / GDW 2 seriouscondition BOD Breakover Diode TCU BOD BOD ETT Electric trigthyristor LTT Lighting trig thyristor RPU Recoveryprotectionunit LTT du/dt , RPU TCU Thyristor Control Unit ETT LTT , TCU ThyristorContro
3、l Unit TE ThyristorControl Unit GU GateUnit THM Thyristor Monitor ETT TVM Thyristor VoltageMonitoring TE VBE Valve baseelectronic LTT RPU VCU ValveControl Unit ETT TCU TCU Q / GDW 3 1 2 3 4 1 2 3 4 1 2 3 4 2 4 8 10 1 1 2 3 4 2 2 4 6 8 4 4 8 12 16 8 8 16 24 32 10 10 20 30 40 a) 4 2 b) 2 Q / GDW 4 c)
4、2 d) 2 30 12 30 12 16 20 24 30 20 12 20 12 16 20 24 30 20 12 20 12 16 20 24 30 Q / GDW 5 A X 8 10 2 8 1 8 1 8 1 8 2 4 10K 8 80% 3 4 IP IP 2 4 2 4 IP PF IP PF 3 PF 4 3 4 3 (VCU, TVM VBE) 8 2 4 2 4 3 T E TCU GU 8 3Q / GDW 6 X 4 2 4 2 RPU 8 3 4 2 8 3 8 5% 3 8 3 4 2 10 4 4 2 10 3 8 3 8 3% 3 8 5% 3 8 5% 3 8 2 4 5% 3 8 3 X 8 10 2 8 1 8 3 8 2 4 4Q / GDW 7 8 20% 3 4 2 8 3 8 10 2 8 1 8 2 8 8 2 4 10K 3 8 55K 80 2 8 80K 95 3 2 1 8 3 10 1 8 2 8 2Q / GDW 8 B 660kV / / Q / GDW 9 Q / GDW 10 11 11 11 11 .12 .12Q / GDW 11 Q/GDW168 1. 2. 1. 660kV 1. GB/T13498-2007 2.
