BS QC 750106-1993 Specification for harmonized system of quality assessment for electronic components Semiconductor discrete devices Blank detail specification Field-effect transis.pdf

1、BRITISH STANDARD BS QC 750106:1993 IEC747-8-2: 1993 Specification for Harmonized system of quality assessment forelectronic components Semiconductor discrete devices Blank detail specification Field-effect transistors for case-rated power amplifier applicationsBSQC750106:1993 BSI 01-2000 ISBN 0 580

2、34163 1 Amendments issued since publication Amd. No. Date CommentsBSQC750106:1993 BSI 01-2000 i Contents Page National foreword ii Introduction 1 Short description 2 Mechanical description 2 Categories of assessed quality 2 Reference data 2 4 Limiting values (absolute maximum system) 3 5 Electrical

3、characteristics 4 6 Marking 6 7 Ordering information 6 8 Test conditions and inspection requirements 6 9 Group D Qualification approval tests 14 10 Additional information (not for inspection purposes) 14BSQC750106:1993 ii BSI 01-2000 National foreword This BritishStandard has been prepared under the

4、 direction of the Electronic Components Standards Policy Committee. It is identical with IEC747-8-2:1993:QC750106 Semiconductor devices Discrete devices Part8: Field-effect transistors Section2. Blank detail specification for field-effect transistors for case-rated power amplifier applications, publ

5、ished by the International Electrotechnical Commission (IEC). A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standards are responsible for their correct application. Compliance with a British Standard does not of itself confer immunity fro

6、m legal obligations. Cross-references International Standard a Corresponding BritishStandard IEC68-2-17:1978 BS2011 Environmental testing Part2.1Q:1981 Test Q. Sealing (Identical) IEC191-2:1966 BS3934 Mechanical standardization of semiconductor devices Part2:1992 Schedule of international drawings g

7、iving dimensions (Identical) IEC747-1:1983 BS6493 Semiconductor devices Section1.1:1984 General (Identical) IEC747-2:1983 Section1.2:1984 Recommendations for rectifier diodes (Identical) IEC747-8:1984 Section1.8:1985 Recommendations for field-effect transistors (Identical) IEC747-8-1:1988 BSQC750112

8、:1988 Specification for harmonized system of quality assessment for electronic components. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to5W and1GHz (Identical) IEC747-10/ QC700000:1981 BSQC700000:1991 Harm

9、onized system of quality assessment for electronic components. Semiconductor devices. Generic specification for discrete devices and integrated circuits (Identical) IEC747-11/ QC750000:1985 BSQC750000:1986 Harmonized system of quality assessment for electronic components. Discrete semiconductor devi

10、ces. Sectional specification (Identical) IEC749:1984 BS6493 Semiconductor devices Part3:1985 Mechanical and climatic test methods (Identical) a Some standards are undated in the text. Summary of pages This document comprises a front cover, an inside front cover, pagesi and ii, pages1to14 and a back

11、cover. This standard has been updated (see copyright date) and may have had amendments incorporated. This will be indicated in the amendment table on the inside front cover.BSQC750106:1993 BSI 01-2000 1 Introduction The IEC quality assessment system for electronic components is operated in accordanc

12、e with the statutes of the IEC and under the authority of the IEC. The object of this system is to define quality assessment procedures in such a manner that electronic components released by one participating country as conforming with the requirements of an applicable specification are equally acc

13、eptable in all other participating countries without the need for further testing. This blank detail specification is one of a series of blank detail specifications for semiconductor devices and shall be used with the following IEC publications: 747-10/QC700000:1991, Semiconductor devices. Discrete

14、devices Part10: Generic specification for discrete devices and integrated circuits. 747-11/QC750100:1985, Semiconductor devices. Discrete devices Part11: Sectional specification for discrete devices. Required information Numbers shown in brackets on this and the following page correspond to the foll

15、owing items of required information, which should be entered in the spaces provided. Identification of the detail specification 1 The name of the national standards organization under whose authority the detail specification is issued. 2 The IECQ number of the detail specification. 3 The numbers and

16、 issue numbers of the generic and sectional specifications. 4 The national number of the detail specification, date of issue and any further information, if required by the national system. Identification of the component 5 Type of component. 6 Information on typical construction and applications. I

17、f a device is designed to satisfy several applications, this shall be stated here. Characteristics, limits and inspection requirements for these applications shall be met. If a device is electrostatic sensitive, or contains hazardous materials, e.g.beryllium oxide, a caution statement shall be added

18、 in the detail specification. 7 Outline drawing and/or reference to the relevant document for outlines. 8 Category of assessed quality. 9 Reference data on the most important properties to permit comparison between component types. Throughout this standard, the texts given in square brackets are int

19、ended for guidance to the specification writer and shall not be included in the detail specification. Throughout this standard, when a characteristic or rating applies, “” denotes that a value shall be inserted in the detail specification.BSQC750106:1993 2 BSI 01-2000 Name (address) of responsible N

20、AI (and possibly of body from which specification is available). 1 Number of IECQ detail specification, plus 2 issue number and/or date. ELECTRONIC COMPONENT OF ASSESSED QUALITY IN ACCORDANCE WITH: Generic specification: Publication747-10/QC700000 Sectional specification: Publication747-11/QC750100

21、and national references if different. 3 National number of detail specification. 4 This box need not be used if national number repeats IECQ number. DETAIL SPECIFICATION FOR: FIELD-EFFECT TRANSISTORS FOR CASE-RATED POWER AMPLIFIER APPLICATION Type number(s) of the relevant device(s). Ordering inform

22、ation: see clause7 of this standard. 5 Mechanical description Outline references: IEC191-2 mandatory if available and/or national if there is no IEC outline. Outline drawing may be transferred to or given with more details in clause10 of this standard. Terminal identification drawing showing pin ass

23、ignments, including graphical symbols. Marking: letters and figures, or colour code. The detail specification shall prescribe the information to be marked on the device, if any. See subclause2.5 of generic specification and/or clause6 of this standard. Polarity indication, if a special method is use

24、d. 7 Short description Case-rated field-effect transistors for power amplifier applications. Device type: Type A: Junction or Schottky gate Type B: Insulated-gate depletion Type C: Insulated-gate enhancement Semiconductor material: Si Polarity: N-channel or P-channel Encapsulation: cavity or non-cav

25、ity. CAUTION: Observe precautions for handling electrostatic sensitive devices if applicable. 6 Categories of assessed quality From subclause2.6 of the generic specification. 8 Reference data plus any important quick reference data: T amb , T case , voltage. 9 Information about manufacturers who hav

26、e components qualified to this detail specification is available in the current Qualified Products List.BSQC750106:1993 BSI 01-2000 3 4 Limiting values (absolute maximum system) These values apply over the operating temperature range, unless otherwise specified. Repeat only subclause numbers used, w

27、ith title. Any additional values shall be given at the appropriate place, but without subclause number(s). Curves should preferably be given under clause10 of this standard. Subclause Limiting values Symbol Type A Type B Type C Min. Max. Min. Max. Min. Max. 4.1 Minimum and maximum operating case tem

28、perature T case 4.2 Minimum and maximum storage temperatures T stg 4.3 Maximum drain-source voltage under specified conditions V DSX or V DSS or V DSR 4.4 4.5 4.6 4.7 4.8 4.8.1 4.8.2 4.9 4.10 4.10.1 4.10.2 4.10.3 Maximum reverse gate-source voltage (with V DS =0) and, where appropriate, Maximum forw

29、ard gate-source voltage, with V DS =0 Maximum gate-drain voltage with source open-circuited Maximum forward gate current Maximum drain current Power dissipation Special requirements for ventilation and/or mounting shall be specified. Maximum total power dissipation as a function of temperature over

30、the specified range of operating case temperatures or Maximum virtual junction temperature/channel temperature and absolute limit of power dissipation see note Safe operating area For insulated-gate devices with separate source and substrate terminals: (in general, devices that include gate-protecti

31、on diodes do not require this to be specified). Maximum gate-substrate voltage under specified conditions Maximum drain-substrate voltage under specified conditions Maximum source-substrate voltage under specified conditions V GSS V GSS (F) V GDO I GF I D P totmax. T vjmax. P totabs. SOAR V GB V DB

32、V SB NOTEWhen T vj max. and P totabs. are specified R th(j-case)and, where appropriate, Z th(j-case)shall also be specified (see5.7 and5.8). BSQC750106:1993 4 BSI 01-2000 5 Electrical characteristics See clause 8 of this standard for inspection requirements. Repeat only subclause numbers used, with

33、title. Any additional characteristics shall be given at appropriate place but without subclause number(s). When several devices are defined in the same detail specification, the relevant values shall be given on successive lines, avoiding repeating identical values. Curves should preferably be given

34、 under clause10 of this standard. Subclause Characteristics and conditions at T case = 25 C unless otherwise specified (see clause4 of the generic specification) Symbol Types Tested A B C 5.1 5.2 5.3 5.4 5.5 5.6 Either: Maximum gate cut-off/leakage current with source open-circuited, preferably at m

35、aximum rated gate-drain voltage V GDO or: Maximum gate cut-off/leakage current with drain short-circuited to source, preferably at maximum rated gate-source voltage V GSS or: Maximum gate cut-off/leakage current at specified V DS , and specified V GSor I D Either: Maximum gate cut-off/leakage curren

36、t with source open-circuited, at V GDpreferably between65% and85% of maximum rated V GDOand at a high temperature or: Maximum gate cut-off/leakage current with drain short-circuited to source at V GDpreferably between65% and85% of maximum rated V GSSand at a high temperature Minimum and maximum gate

37、-source cut-off voltage at specified V DSand I D Minimum and maximum gate-source threshold voltage at specified V DSand I D Maximum drain-source voltage at specified V GSand I D Minimum and maximum drain current at V GS =0 and at specified V DSd.c. or pulse as specified Minimum and maximum drain cur

38、rent at specified V GSand V DS Maximum drain cut-off current at specified V GSand V DS I GDO(1) I GSS(1) I GSX I GDO(2) I GSS(2) V GS(off) V GS(TO) V DSon I DSS I D I DSX A2b A2b A2b C2b C2b A2b A2b A2b A2b A2b A2bBSQC750106:1993 BSI 01-2000 5 Subclause Characteristics and conditions at T case = 25

39、C unless otherwise specified (see clause4 of the generic specification) Symbol Types Tested A B C 5.7 5.8 5.9 Maximum thermal resistance channel-to-case when virtual channel temperature is quoted as a rating Maximum transient thermal impedance channel-to-case when virtual channel temperature is quot

40、ed as a rating Maximum small-signal common-source capacitances at specified frequency, V DSand either V GSor I D R th(j-case) Z th(j-case) C2d C2d 5.9.1 5.9.2 5.9.3 Input capacitance Output capacitance Reverse transfer capacitance C iss C oss C rss C2a 5.10 5.11 Minimum and maximum small-signal forw

41、ard transconductance at specified frequency, V DSand either V GSor I D Modulus of the common-source y-parameters at specified frequency, V DSand either V GSor I D g fs A3 5.11.1 5.11.2 Where appropriate: Minimum and maximum input admittances Where appropriate: Minimum and maximum output admittances

42、y is y os C2a 5.11.3 5.12 5.13 Where appropriate: Reverse transfer admittance Minimum and maximum small-signal common-source output conductances at specified frequency, V DSand either V GS , or I D Minimum output power at specified frequency, input power and biases y rs g oss P out C2a B8 BSQC750106

43、:1993 6 BSI 01-2000 6 Marking Any particular information other than that given in box7 (clause1) and/or2.5 of the generic specification shall be given here. 7 Ordering information The following minimum information is necessary to order a specific device, unless otherwise specified: precise type refe

44、rence (and nominal voltage value, if required); IECQ reference of detail specification with issue number and/or date when relevant; category of assessment quality as defined in3.7 of sectional specification and, if required, screening sequence as defined in3.6 of sectional specification; any other p

45、articulars. 8 Test conditions and inspection requirements These are given in the following tables, where the values and exact test conditions to be used shall be specified as required for a given type, and as required by the relevant tests in the relevant publication. The choice between alternative

46、tests or test methods shall be made when a detail specification is written. when several devices are included in the same detail specification, the relevant conditions and/or values should be given on successive lines, avoiding, where possible, repeating identical conditions and/or values. Throughou

47、t the following text, reference to subclause numbers is made with respect to the generic specification unless otherwise stated and test methods are quoted from clause4 of the sectional specification. For sampling requirements, either refer to, or reproduce, values of3.7 of sectional specification, a

48、ccording to applicable category(ies) of assessed quality. For group A, the choice between AQL or LTPD system shall be made in the detail specification. BSQC750106:1993 BSI 01-2000 7Group A Lot-by-lot LSL=Lower specification limit USL=Upper specification limit Inspection or test Symbol Reference Conditions at T case =25 C unless otherwise specified (see clause4 of the generic specification) Inspection requirements limits Type A Type B Type C L