BS QC 790132-1992 Specification for harmonized system of quality assessment for electronic components Semiconductor devices Integrated circuits Blank detail specification Bipolar m.pdf

1、BRITISH STANDARD BS QC 790132:1992 Specification for Harmonized system of quality assessment for electronic components Semiconductor devices Integratedcircuits Blank detail specification Bipolar monolithic digital integrated circuit gates (excluding uncommitted logic arrays)BSQC790132:1992 BSI09-199

2、9 ISBN 0 580 35528 4 Amendments issued since publication Amd. No. Date CommentsBSQC790132:1992 BSI 09-1999 i Contents Page National foreword ii Introduction 1 1 Marking and ordering information 2 2 Application related description 3 3 Specification of the function 3 4 Limiting values (absolute maximu

3、m rating system) 3 5 Operating conditions (within the specified operating temperature range) 4 6 Electrical characteristics 4 7 Programming 6 8 Mechanical and climate ratings, characteristics and data 6 9 Additional information 6 10 Screening (if required) 7 11 Quality assessment procedures 7 12 Str

4、uctural similarity procedures 7 13 Test conditionS and inspection requirements 7 4Additional measurement method 11 Table I Group A (see note6) Lot-by-lot 8 Table II Group B Lot-by-lot 9 Table III Group C Periodic 10 Table IV Group D Qualification approval tests 11BSQC790132:1992 ii BSI 09-1999 Natio

5、nal foreword This British Standard has been prepared under the direction of the Electronic Components Standards Policy Committee, ECL/-. It is identical with IEC Publication748-2-1 QC790132 Semiconductor devices. Integrated circuits. Part2: Digital integrated circuits. Section 1: Blank detail specif

6、ication for bipolar monolithic digital integrated circuit gates excluding uncommitted logic arrays published by the International Electrotechnical Commission IEC and is a harmonized specification with the IECQ system of quality assessment for electronic components. This blank detail specification is

7、 one of a series of blank detail specifications for semiconductor devices to be used with BS QC700000 “Generic specification for discrete devices and integrated circuits”. Cross-references International Standard a Corresponding British Standard IEC68-2-17 BS2011 Environmental testing Part2.1 Q:1981

8、Test Q. Sealing Identical IEC617-12 BS3939 Guide for graphical symbols for electrical power, telecommunications and electronics diagrams Part12:1985 Binary logic elements Identical IEC747-10 BSQC700000:1991 Harmonized system of quality assessment for electronic components. Semiconductor devices. Gen

9、eric specification for discrete devices and integrated circuits Identical BS6493 Semiconductor devices Part2: Integrated circuits IEC748-1 Section2.1:1985 General Identical IEC748-2 Section2.2:1986 Recommendations for digital integrated circuits Identical IEC748-11 BS QC790100:1991 Harmonized system

10、 of quality assessment for electronic components. Semiconductor devices. Sectional specification for semiconductor integrated circuits excluding hybrid circuits Identical IEC749 BS6493 Semiconductor devices Part3:1985 Mechanical and climatic tests methods Identical QC001002 BS QC001002: Rules of Pro

11、cedure of the IEC Quality Assessment System for Electronic Components IECQ Identical a Undated in the textBSQC790132:1992 BSI 09-1999 iii A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standards are responsible for their correct applicatio

12、n. Compliance with a British Standard does not of itself confer immunity from legal obligations. Summary of pages This document comprises a front cover, an inside front cover, pagesi to iv, pages1to11 and a back cover. This standard has been updated (see copyright date) and may have had amendments i

13、ncorporated. This will be indicated in the amendment table on the inside front cover.iv blankBSQC790132:1992 BSI 09-1999 1 Introduction The IEC Quality Assessment System for Electronic Components is operated in accordance with the statutes of the IEC and under the authority of the IEC. The object of

14、 this system is to define quality assessment procedures in such a manner that electronic components released by one participating country as conforming with the requirements of an applicable specification are equally acceptable in all other participating countries without the need for further testin

15、g. This blank detail specification is one of a series of blank detail specifications for semiconductor devices and shall be used with the following IEC Publication: 747-10/QC700000, Semiconductor devices. Part 10: Generic specification for discrete devices and integrated circuits. Required informati

16、on Numbers shown in brackets on this and the following pages correspond to the following items of required information, which should be entered in the spaces provided. Identification of the detail specification The clauses given in square brackets on the next page of this standard, which forms the f

17、ront page of the detail specification, are intended for guidance to the specification writer and shall not be included in the detail specification. When confusion may arise as to whether a paragraph is only instruction to the writer or not, the paragraph shall be indicated between brackets. 1 The na

18、me of the National Standards Organization under whose authority the detail specification is issued. 2 The IECQ number of the detail specification. 3 The numbers and issue numbers of the generic and sectional specifications. 4 The national number of the detail specification, date of issue and any fur

19、ther information, if required by the national system. Identification of the component 5 Main function and type number. 6 Information on typical construction (materials, the main technology) and the package. If the device has several kinds of derivative products, those differences shall be indicated,

20、 e.g.feature of characteristics in a comparison table. If the device is sensitive to electrostatic charges, a caution statement shall be added in the detail specification. 7 Outline drawing, terminal identification, marking and/or reference to the relevant document for outlines. 8 Category of assess

21、ed quality according to subclause 2.6 of the generic specification. 9 Reference data.BSQC790132:1992 2 BSI 09-1999 1 Marking and ordering Information 1.1 Marking Any particular information other than that given in box7 and/or subclause 2.5 of the generic specification. 1.2 Ordering information The f

22、ollowing minimum information is necessary to order a specific device, unless otherwise specified: precise type reference (and nominal voltage value, if required); IECQ reference of detail specification with issue number and/or date when relevant; category of assessed quality as defined in subclause

23、2.6 of the generic specification and in clause9 of the sectional specification and, if required, screening sequence as defined in clause8 of the sectional specification; any other particulars. Name (address) of responsible NAI 1 Number of IECQ detail specification, plus issue number and/or date. QC7

24、90132-. 2 (and possibly of body from which specification is available). ELECTRONIC COMPONENT OF ASSESSED QUALITY IN ACCORDANCE WITH: Generic specification: Publication747-10/QC700000 Sectional specification: Publication748-11/QC790100 and national references if different. 3 National number of detail

25、 specification 4 This box need not be used if national number repeats IECQ number. DETAIL SPECIFICATION FOR BIPOLAR MONOLITHIC INTEGRATED CIRCUIT GATES Type number(s) of the relevant device(s). Ordering information: see subclause 1.2 of this standard. 5 Mechanical description Outline references: Sta

26、ndard package reference should be given, IEC number (mandatory if available) and/or national number. 7 Short description Application: see clause6 of this standard Function: see clause3 of this standard Typical construction: Si. Encapsulation: cavity or non-cavity. 6 Outline drawing may be transferre

27、d to or given with more details in clause8 of this standard. Comparison table of characteristic for variant products. CAUTION: Electrostatic sensitive devices. Terminal identification drawing showing pin assignments, including graphical symbols. Categories of assessed quality from subclause 2.6 of t

28、he generic specification. 8 Marking: letters and figures, or colour code. The detail specification shall prescribe the information to be marked on the device, if any. See subclause 2.5 of generic specification and/or subclause1.1 of this standard. Reference data Reference data on the most important

29、properties to permit comparison between types. 9 Information about manufacturers who have components qualified to this detail specification is available in the current Qualified Products List.BSQC790132:1992 BSI 09-1999 3 2 Application related description See information given in box6. 3 Specificati

30、on of the function 3.1 Detailed block diagram A detailed block diagram of the device shall be given. The graphical symbol for the function shall be given. This may be obtained from a catalogue of standards of graphical symbols, or designed according to the rules of IEC Publication617-12. 3.2 Identif

31、ication and function of terminals All terminals shall be identified on the block diagram (supply terminals, input or output terminals, input/output terminals). The terminal function shall be indicated in a table as follows: 3.3 Functional description 3.3.1 A function table shall be given here. 3.3.2

32、 Boolean equation. 4 Limiting values (absolute maximum rating system) These values apply over the operating temperature range, unless otherwise specified. Repeat only subclause numbers used, with title. Any additional values shall be given at the appropriate place, but without subclause number(s). C

33、urves shall preferably be given under clause9 of this standard. Terminal number Terminal symbol Terminal designation Function Function of terminal input/output identification Type of output circuit Subclause Parameters Symbol Value Min. Max. 4.1 4.1.1 4.1.2 4.2 4.2.1 4.2.2 4.2.3 4.3 4.3.1 4.3.2 Temp

34、eratures Operating ambient temperatures Storage temperatures Voltages (note1) Supply voltage Input voltage Input voltage between multiple-emitter transistor inputs Currents (note1) Input current Output current T amb T stg V CC V EE V I V II I I I o x x x x x x x x x x x x x NOTE 1If the values quote

35、d above may be exceeded under transient conditions, then the permissible excess values and their duration should be stated. BSQC790132:1992 4 BSI 09-1999 5 Operating conditions (within the specified operating temperature range) 6 Electrical characteristics See clause13 of this standard for inspectio

36、n requirements. Repeat only subclause numbers used, with title. Any additional characteristics shall be given at the appropriate place, but without subclause number(s). When several devices are defined in the same detail specification, the relevant values should be given on successive lines, avoidin

37、g repeating identical values. Curves should preferably be given under clause9 of this standard. Subclause Conditions Symbol Value Tested Min. Max. 5.1 5.1.1 5.1.2 5.1.3 5.1.4 5.1.5 Voltages and currents Supply voltage High-level input voltage Low-level input voltage High-level output current (note2)

38、 Low level output current (note3) V CC V EE V IH V IL I oH I oL x x x x x x x x NOTE 2Does not apply to open-collector devices. NOTE 3Does not apply to open-emitter devices. BSQC790132:1992 BSI 09-1999 5 6.1 Static characteristics They apply over the operating temperature range, unless otherwise spe

39、cified. Subclause Characteristics and conditions Symbol Value Min. Max. 6.1.1 6.1.2 6.1.3 6.1.4 6.1.5 6.1.6 6.1.7 6.1.8 6.1.9 6.1.10 High-level output voltage V CC =min. V IHB V ILA I OH =specified Low-level output voltage V CC =Min. V IHB V ILA I OL =specified Input clamping voltage V CC =min. I IK

40、 =specified, each input in turn High-level output current (only for open-collector devices) (note4) V CC =min. V ILA V OHA High-level input current (note4) V CC =max. V IH =specified, one input V IL =specified Low-level input current V CC =max. V IH =specified V IL = specified, one input Short-circu

41、it output current (note4) V CC = min. and max. V OH = 0 on each output in turn t = specified Output off-state current (only for three-state devices) (note4) V CC =max. V IHB V ILA High-level supply current V CC= max. V I = specified, all inputs Low-level supply current V CC = max. V I = specified, a

42、ll inputs V OH V OL V IK I OH I IH I IL I OS I OZ I CCH I CCL x x x x x x x x x x x x x x NOTE 4In cases where the minimal and maximum values are required for a parameter, it is necessary to choose the worst cases condition of V CCfor each one.BSQC790132:1992 6 BSI 09-1999 6.2 Dynamic characteristic

43、s 6.3 Timing diagrams Not appropriate. 6.4 Capacitances Not appropriate. 7 Programming Not applicable. 8 Mechanical and climatic ratings, characteristics and data See subclause 12.2 of the sectional specification. Any specific mechanical and/or climatic ratings applicable should be required here in

44、accordance with subclause 10.8 of chapter VI of Amendment1 of IEC Publication748-1. (See also IEC Publication747-1, chapterVI, clause 7.) 9 Additional Information The information here is not for inspection purposes. 9.1 To be given only as far as necessary for the specification and use of the device

45、, for instance: temperature derating curves referred to in the limiting values; complete definition of a circuit for measurement, or of an additional method; detailed outline drawing. 9.2 Measurement of static characteristics Any particular information other than that given in the sectional specific

46、ation or in IEC Publication748-2 shall be given here. 9.3 Measurement of dynamic characteristics 9.3.1 Basic electrical test circuit To be specified in the detail specification. Subclause Characteristics and conditions Symbol Value Min. Max. 6.2.1 6.2.2 6.2.3 6.2.4 Propagation times t PLH : V CC =mi

47、n. t PLH : V IHB /V ILA C L =50pF Transition times same as above Propagation times (three-state outputs) same as above (only for three-state) Transition times (three-state outputs) same as above (only for three-state) t PLH t PHL t TLH t THL t PHZ t PZH t PLZ t PZL t THZ t TZH t TLZ t TZL x x x x x

48、x x x x x x xBSQC790132:1992 BSI 09-1999 7 9.3.2 Loading circuit To be specified in the detail specification. 9.4 Electrical endurance loading circuits To be specified in the detail specification. 9.5 Supply noise voltage 9.6 Input loading factor 9.7 Output capacity 9.8 Handling precautions 10 Scree

49、ning (if required) See clause8 of the sectional specification. 11 Quality assessment procedures 11.1 Qualification approval procedure See clause3 of the generic specification and subclause 5.1 of the sectional specification. 11.2 Capability approval procedure Under consideration. 12 Structural similarity procedures See clause6 of the sectional specification. 13 Test co