ANSI IEEE 300-1988 Standard Test Procedures for Semiconductor Charged-Particle Detectors《半导体带电粒子检测器的试验程序》.pdf

1、Recognized as anAmerican National Standard (ANSI) Copyright 1988 byThe Institute of Electrical and Electronics Engineers, Inc345 East 47th Street, New York, NY 10017, USANo part of this publication may be reproduced in any form, in an electronic retrieval system or otherwise, without the prior writt

2、en permission of the publisherIEEE Std 300-1988(R2006)(Revision of IEEE Std 300-1982)IEEE Standard Test Procedures forSemiconductor Charged-ParticleDetectorsSponsorNuclear Instruments and Detectors Committeeof theIEEE Nuclear and Plasma Sciences SocietyReaffirmed March 30, 2006Approved June 9, 1988I

3、EEE Standards BoardApproved February 7, 1989American National Standards InstituteIEEE Standardsdocuments are developed within the Technical Committees of the IEEE Societies and the StandardsCoordinating Committees of the IEEE Standards Board. Members of the committees serve voluntarily and withoutco

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10、rpretation has also received the concurrence of a balance of interests. For this reasonIEEE and the members of its technical committees are not able to provide an instant response to interpretation requestsexcept in those cases where the matter has previously received formal consideration.Comments o

11、n standards and requests for interpretations should be addressed to:Secretary, IEEE Standards Board345 East 47th StreetNew York, NY 10017USAIEEE Standards documents are adopted by the Institute of Electrical and Electronics Engineers without regard towhether their adoption may involve patents on art

12、icles, materials, or processes. Such adoption does not assumeany liability to any patent owner, nor does it assume any obligation whatever to parties adopting the standardsdocuments.iiiForeword(This Foreword is not a part of IEEE Std 300-1988, IEEE Standard Test Procedures for Semiconductor Charged-

13、Particle Detectors.)This standard provides standard test procedures for semiconductor charged-particle detectors for ionizing radiation. Itsupersedes the previous edition, ANSI/IEEE Std 300-1982. The standard has been modied and rened based on theexperience gained in using the earlier edition over a

14、 number of years, taking into account advances in the technology.Companion documents are ANSI/IEEE Std 301-1988, Test Procedures for Ampliers and Preampliers Used withDetectors of Ionizing Radiation, and ANSI/ IEEE Std 759-1984, IEEE Standard Test Procedures for Semiconductor X-ray Energy Spectromet

15、ers.This standard was prepared by the Nuclear Instruments and Detectors Committee of the IEEE Nuclear and PlasmaSciences Society. When this standard was approved the members of the committee were:Sanford Wagner, Chair Louis Costrell, Secretary Muzaffer AtacJ. G. BellianJ. A. ColemanD. C. CookJ. F. D

16、etkoEdward Fairstein*F. S. GouldingRonald KeyserF. A. KirstenH. W. KranerG. L. MillerD. E. PersykP. L. PhelpsK. L. SwinthJ. H. TrainorS. WagnerF. J. Walter*Served as project leader for this revision.At the time this standard was published it was under consideration for approval as an American Nation

17、al Standard. TheAmerican National Standards Committee N42 on Radiation Instrumentation had the following members at the timethis document was sent to letter ballot.Louis Costrell, Chair David C. Cook, Secretary American Conference of Governmental Industrial HygienistsJesse LiebermanBattelle Pacic No

18、rthwest Laboratories. J. M. SelbyHealth Physics Society. J. B. Horner KuperJ. M. Selby (Alt)Institute of Electrical and Electronics Engineers .Louis CostrellD. C. Cook (Alt)A. J. Spurgin (Alt)J. Forster (Alt)Lawrence Berkeley Laboratory L. J. WagnerNuclear Suppliers Association K. F. SinclairOak Rid

19、ge National LaboratoryH. R. BrashearD. J. Knowles (Alt)US Nuclear Regulatory Commission. E. C. WenzingerUS Department of Energy. Gerald GoldsteinUS Department of the Army Materiel Command Basil MarkowUS Department of Commerce, National Bureau of Standards Louis CostrellUS Federal Emergency Managemen

20、t Agency . Carl R. Siebentritt, JrMembers-at-Large.J. G. BellianD. C. CookJohn M. Gallagher, JrD. A. MackE. J. VallarioivThe following persons were on the balloting committee that approved this document for submission to the IEEEStandards Board.A. AtacJ. G. BellianJ. A. ColemanD.C. CookL. CostrellJ.

21、 DetkoE. FairsteinF.S. GouldingR. KeyserF. A. KirstenH.W. KranerG. L. MillerD. E PersykP.L. PhelpsJ.A. TrainorK.L. SwinthS. WagnerF.J. WalterWhen the IEEE Standards Board approved this standard on June 9, 1988, it had the following membership:Donald C. Fleckenstein, Chair Marco W. Migliaro, Vice Cha

22、ir Andrew G. Salem, Secretary Arthur A. BlaisdellFletcher J. BuckleyJames M. DalyStephen R. DillonEugene P. FogartyJay Forster*Thomas L. HannanKenneth D. HendrixTheodore W. Hissey, JrJohn W. HorchJack M. KinnFrank D. KirschnerFrank C. KitzantidesJoseph L. Koepfinger*Irving KolodnyEdward LohseJohn E.

23、 May, JrLawrence V. McCallL. Bruce McClungDonald T. Michael*Richard E. MosherL. John RankineGary S. RobinsonFrank L. RoseHelen M. WoodKarl H. ZainingerDonald W. Zipse*Member EmeritusvCLAUSE PAGE1. Scope and Object 11.1 Scope 11.2 Object . 12. References.13. Symbols and Definitions.23.1 Symbols 23.2

24、Specialized Definitions 34. Introduction.74.1 Interaction of Charged Particles with Matter. 74.2 Semiconductor Charged-Particle Detector. 84.3 Bias Resistor 104.4 Pulse Shaping. 105. General Requirements.125.1 135.2 135.3 135.4 135.5 135.6 135.7 135.8 135.9 135.10 146. Resolution Measurements .146.1

25、 Energy Resolution 146.2 Time Resolution. 166.3 Position Resolution and Linearity of a Position-Sensitive Detector 197. Noise Measurement.227.1 Noise Measurement by Pulse Height Distribution. 227.2 Noise Measurement by Oscilloscope and True Root-Mean-Square Voltmeter. 237.3 Measurement of Electronic

26、 Noise with Detector Removed. 247.4 Determination of Detector Contribution to Noise and Resolution. 257.5 Noise Linewidth (FWHM) as a Function of Amplifier Shaping Index . 268. Sensitivity to Ambient Conditions268.1 Atmospheric Sensitivity. 268.2 Vacuum Thermal Cycle Test . 268.3 Mechanical and Envi

27、ronmental Test 278.4 Light Sensitivity. 278.5 Radiation Damage Measurements . 27viCLAUSE PAGE9. Other Measurements .279.1 Current-Voltage Characteristics. 279.2 Dead-Layer Energy Loss 289.3 Sensitive Area 289.4 Detector Thickness (Transmission Detectors) . 299.5 Capacitance-Voltage Characteristics .

28、 2910. Bibliography29Copyright 1988IEEE All Rights Reserved1IEEE Standard Test Procedures for Semiconductor Charged-Particle Detectors1. Scope and Object1.1 ScopeThis standard applies to semiconductor radiation detectors that are used for the detection and high-resolutionspectroscopy of charged part

29、icles. The measurement techniques described were selected to be readily available to all manufacturers and users of charged-particle detectors. Some superior techniques are not included because the methods are too complex or require equipment (such as particle accelerators) which may not be readily

30、available.Test procedures for the associated ampliers and preampliers are described in ANSI/IEEE Std 301-1988 2.11.2 ObjectThe object of this standard is to establish standard test procedures for semiconductor charged-particle detectors. These detectors are in widespread use for the detection and hi

31、gh-resolution spectroscopy of charged particles. It is desirable to maintain standard test procedures so that measurements may have the same meaning to all manufacturers and users.Not all tests described in this standard are mandatory, but tests which are used to specify performance shall be perform

32、ed in accordance with the procedures described herein.2. ReferencesThis standard shall be used in conjunction with the following publications:1 ANSI ENHSpecial Report SR-24B, 1982 Edition, ANSI Photo Lamp Codes.21The numbers in brackets correspond to those of the references in Section 2.2ANSI public

33、ations are available from the Sales Department, American National Standards Institute, 1430 Broadway, New York, NY 10018.2Copyright 1988IEEE All Rights ReservedIEEE Std 300-1988IEEE STANDARD TEST PROCEDURES FOR2 ANSI/IEEE Std 301-1988, IEEE Standard Test Procedures for Ampliers and Preampliers Used

34、with Detectors of Ionizing Radiation.33 ANSI/IEEE Std 325-1986, IEEE Standard Test Procedures for Germanium Gamma-Ray Detectors. 4 IEEE Std 194-1977, IEEE Standard Pulse Terms and Denitions. 3. Symbols and Definitions3.1 SymbolsADC= analogue-to-digital converterC= electrical capacitanceCc= calibrate

35、d capacitor used to couple a pulse generator to a preamplierCf= feedback capacitor in the charge-sensitive loop of a preamplierE= energy of a particle or photon= average energy required to form one hole-electron pair in a semiconductor detectorFWHM = full width at haft maximumFW.1M = full width at o

36、ne-tenth maximumFW.01M= full width at one one-hundreth maximumMCA = multichannel analyzerq= charge of the electron, 1.602 10-19coulombQ= electric chargeR= electrical resistanceRd= detector load resistorS= channel number for a multichannel analyzer spectrum obtained to check the positional resolution

37、 and linearity of position-sensitive detectorsSi= peak channel number of the ith position peak generated by a position-sensitive detector when used with a mask with slits. (The indices for irange from i= 0 to i= m.)T= absolute temperature (K)t= timeTAC = time-to-amplitude convertertc= charge collect

38、ion time in a detectorto= observed detector rise time due to the combined effects of the charge collection time and electronic rise timetf= pulse fall time (90% 10% of its peak value)tp= peaking time of a pulsetr= pulse rise time (10% 90% of its peak value)tt= tailing time of a pulset0.5= width of a

39、 pulse at 50% of its peak heightt.01= width of a pulse at one percent of its peak height= time constantd= time constant for decay of a pulseV= electric voltageZo= characteristic impedance3.2 Specialized DefinitionsDenitions that are followed with the reference IEEE Std 194-1977 4 contain pulse-shapi

40、ng terms dened in that standard.Copyright 1988IEEE All Rights Reserved3SEMICONDUCTOR CHARGED-PARTICLE DETECTORSIEEE Std 300-1988When the term amplieris used, preamplieralso is implied unless otherwise stated.active dimension (of a position-sensitive detector).A dimension (length, width) of that regi

41、on of a position-sensitive detector that is depleted.avalanche breakdown (of a semiconductor device).A breakdown caused by the cumulative multiplication of charge carriers through eld-induced impact ionization.band gap.The energy difference between the bottom of the conduction band and the top of th

42、e valence band.baseline.The average of the levels from which a pulse departs and to which it returns in the absence of a following overlapping pulse (see IEEE Std 194-1977 4).bias.(1) In a biased amplier, the applied threshold voltage (or current) below which the gain is zero.(2) In a detector, the

43、polarizing electric eld that causes charge to be collected.biased amplier.An amplier giving zero output for input signals below an adjustable threshold and having a constant incremental gain above that threshold up to a specied maximum output.bias resistor (detector).The resistor through which the p

44、olarizing voltage is applied to a detector.blocking contact (of a semiconductor radiation detector).That contact from which depletion proceeds into the semiconductor material under conditions of reverse bias.breakdown (of a semiconductor diode).A phenomenon occurring in a reverse-biased semiconducto

45、r diode, the initiation of which is observed as a transition from a region of high dynamic xresistance to a region of substantially lower dynamic resistance for increasing magnitude of reverse current.breakdown region (of a semiconductor diode characteristic).That entire region of the voltage-curren

46、t characteristic beyond the initiation of breakdown for increasing magnitude of reverse current.breakdown voltage (of a semiconductor diode).The voltage measured at a specied current in the breakdown region.capacitance (of a semiconductor radiation detector).The small-signal capacitance measured bet

47、ween terminals of the detector under specied conditions of bias and frequency.channel, surface (of a semiconductor radiation detector).A thin region at a semiconductor surface of p- or n-type conductivity created by the action of an electric eld; for example, that due to trapped surface charge.chann

48、eling, lattice (in a semiconductor radiation detector).A phenomenon that results in a crystallographic directional dependence of the rate of energy loss of ionizing particles.charge carrier (of a semiconductor).A mobile conduction electron or mobile hole.charge collection time (of a semiconductor ra

49、diation detector).The time interval, after the passage of an ionizing particle, for the integrated current owing between the terminals of the detector to increase from 10% to 90% of its nal value.clip, clipping.A limiting operation such as1) The use of a high-pass lter (differentiator) or2) A nonlinear operation to limit the amplitude of a pulse.The rst usage is archaic.4Copyright 1988IEEE All Rights ReservedIEEE Std 300-1988IEEE STANDARD TEST PROCEDURES FORconstant-fraction discriminator.An amplitude discriminator in