ARMY MIL-M-63324 A-1981 MICROCIRCUIT DIGITAL CMOS SPECIAL PURPOSE NOR GATE《无闸特殊用途的互补金属氧化物半导体数字微电路》.pdf

1、! MIL-I-63324A 13 M 9997906 0348235 7 - - MIL-M- 6 3 3 24A (AR ) 8 April 1981 SUPERSEDING MIL-M- 6 3 3 24 (AR ) 24 August 1979 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, CMOS, SPECIAL PURPOSE NOR GATE This specification is approved for use by the U.S. Army Armament Research and Development Conman

2、d, and is available for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 This specification contains requirements not covered by the drawings and provides quality assurance provisions for fabrication and packing of a complementary, metal oxide, semiconductor (CMOS) inte

3、grated circuit used in various Scatterable Mines. 2. APPLICABLE DOCUMENTS 2.1 Issue of documents. The following documents of the issue in effect on date of invitation for bids or request for proposal, form a part of this specification to the extent specified herein. SPECIFICATIONS MILITARY MIL-M-385

4、10 - Microcircuits, General Specifications For MIL-M-55565 - Microcircuits, Preparation For Delivery Of STANDARDS MIL I TARY MIL-STD-883 - Test Methods and Procedures for Microelectronics THIS DOCUMENT CONTAINS Ib PAGES. Provided by IHSNot for ResaleNo reproduction or networking permitted without li

5、cense from IHS-,-,-MIL-M-b3324A 13 m 7777706 034823b 7 m MIL-STD-1188- Commercial Packaging of Supplies and E qu i pmen t DRAWINGS (Sec. 6.4) U,S. ARMY ARMAMENT RESEARCH AND DEVELOPMENT COMMAND (ARRADCOM) 9292968 - Microcircuit, Digital, CMOS Special Purpose Nor Gate (Copies of specifications, stand

6、ards, drawings, and publications required by suppliers in connection with specific procurement functions should be obtained from the procuring activity or as directed by the Contracting Officer.) 3 . REQUIREMENTS 3.1 General. The manufacturer of Microcircuit, Digital, CMOS, Special Purpose Nor Gate

7、(device(s) shall have production and test facilities and a quality and reliability assurance program adequate to assure successful compliance with the provisions of this specification. Only devices which were inspected for and met all the requirements specified herein shall be marked and delivered,

8、3.2 Detail. The devices shall comply with all the requirements specified on Drawing (DWG) 9292968, in applicable specifications and standards, and herein. Device design, processing, assembly, and inspection shall be in accordance with MIL-M-38510 for Class B microcircuits. MIL-STD-883. Device testin

9、g shall be in accordance with 3.3 Temperature 3.3.1 Operating temperature. The device shall comply withall the electrical and mechanical requirements of this specification over the operating temperature range of minus 55OC through 85OC. 3.3.2 Storage temperature. The device shall have a minimum stor

10、age life of ten years and shall comply with all the requirements of this specification after storage over the temperature range of minus 55OC through 125OC. 3.4 Environmental and mechanical. Devices to be delivered under this specification shall be capable of meeting the following MIL-STD-883 enviro

11、nmental and mechanical tests when the devices are subjected to these tests in accordance with this specification 2 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-Pl-63329A 13 = 979990b 0398237 O MIL-M-6 3 3 24A (AR Environmental Tests Method Con

12、ditions Moisture resistance . 1004 Steady state life Temperature cycling High temperature storage Seal (Fine and Gross) Burn-in 1005 I), 1000 hrs 125OC 1010 C, 10 cycles 1008 C 1014 10 15 D, 168 hours 125OC (A or B however, only one input terminal per device shall be tested. 3,6 Device marking. Mark

13、ing of the device shall be in accordance with this specification and MIL-M-38510 as applicable. The marking shall be legible and complete, and shall meet the resistance to solvents requirements of MIL-STD-883, Method 2015. The following markings shall be placed on each device: a. index point (Pin No

14、 1) see DWG 9292968 b, Part No.: Example: 9292968X (X: DWG revision letter) C. Inspection lot identification (Date Code) d. Manufacturers identification Markings a, b and c shall be placed on the top surface of the device. interfering with the other markings. Marking d may be placed in any suitable

15、location without 4 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-63324A 13 M 777770b m - g U I rD O O m “E: “ “In m I I -n XX alcd aa 33 II II II II i o -Id O I *a - h x ce R rn 3 3 O a d O a rl O . 4 n X 8 u rn 7 9 4 O 4 O 4 . 1 o u i O0 in

16、0. eo + InEl 4 (II U er4 U op *d f.4 a U U (d e rl 4 k u O al FI r4 ! . CI Y ! u O “ 4N m 39 I. 0“ ,? In 14-4 +i N i pi F1 H 5 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-63 324A(AR ) . TABLE II. Screening - all devices 100%. Test - interna

17、l Visual High Temperature Storage (Post Seal Bake) Temperature Cycling Constant Acceleration S ea1 A. Fine B. Gross Electrical Characteristics (Pre Burn-in) Burn-in. 21 Electrical Characteristics (Post Burn-in) External Visual Method and Condition L/ - 2010, Condition B 1008, Condition C 1010, Condi

18、tion C 2001, Condition E,Y1 Orientation Only 1014, Condition A or B 1014, Condition C TABLE I, (25OC + 5%) herein - 1015, Condition D, 168 Hrs. 125OC TABLE I, (25OC - + SOC) herein 2009 - i/ - 2/ Methods refer to MIL-STD-883 except as noted. Class B device, using circuit of Figure 1. 10 + 0.1 volts

19、dc 200 K OHM f 8 + 2 volts DUT 4- 4 1 -5 7 Q I 0JLn- 2 K Hz square wave (50% duty factor) FIGURE I. Burn-in and life test circuit. 6 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M- 63 3 24A(AR) t 3.7 Data requirements. Data shall be recorded o

20、n a go/no-go basis and retained for all tests caled out by this specification in accordance with 4.5.4. qualifying agency accept/reject limits used for each go/no-go test. The contractor shall submit to the 3.8 Process controls. All process controls essential for manufacturing of devices to assure a

21、 reliable end item shall be submitted to the.designated agency specified in 6.6 herein, prior to the start of fabrication. 3.9 First article inspection. This specification contains technical provisions for first article inspection. the submission of first article samples by the contractor shall be a

22、s specified in the contract. Requirements for 3.10 Workmanship. Devices shall be manufactured, processed, and tested in a careful and workmanlike manner in accordance with good engineering practice, with the requirements of this specification, and with the production practices, workmanship instructi

23、ons, inspection and test procedures, and training aids prepared by the manufacturer. 4. QUALITY ASSURANCE PROVISIONS 4.1 Responsibility for inspection and standard quality assurance provisions. Unless otherwise specified herein or in the contract, the provisions of MIL-M-38510 shall apply and are he

24、reby made part of this detail specification, the supplier is responsible for the performance of all inspection requirements as specified herein, and the supplier may use his own or any other facilities suitable for the Performance of the inspection requirements specified herein, unless disapproved b

25、y the Government. In addition, the Government reserves the right to perform any of the inspections set forth in the specification where such inspections are deemed necessary to assure supplies and services conform to prescribed requirements . 4.2 Classification of inspections. The following types of

26、 inspection shall be conducted on this item. a. First Article Inspection b. Quality Conformance Inspection C. Screening 4.3 First article insnection 7 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- MIL-M-63324A 23 m 777790b 0348242 4 m - 4.3.1 Subm

27、ission. The contractor shall submit a first article sample as designated by the Contracting Officer for evaluation in accordance with the provisions of 4.3.2. The first article inspection lot size after screening shall consist of fifty (50) devices, minimum. 4.3.2 Inspection to be performed. First a

28、rticle inspection shall be in accordance with the applicable requirements of MIL-M-38510 and as modified by this specification, except that the procuring agency shall be the qualifying activity. requirements shall consist of inspections specified in subgroups “a“ through “go listed in TABLE III. sub

29、jected by the qualifying activity (Government) to all of the examinations and tests specified in this specification and to any requirements of the applicable drawings. First article First article items may be a. Screening. Screening shall be performed on all devices in accordance with the inspection

30、 flow specified in TABLE II. 4,3.3 Rejection. If any device fails to comply with any of the applicable requirements, the first article sample shall be rejected. The Government reserves the right to terminate its inspection upon any failure of a device in the sample to comply with any of the stated r

31、equirements. 4.3,4 Requalification. The device shall be subjected to another First Article as stipulated in the contract if: a. The contractors manufacturing techniques or process controls which affect the form, fit, function or internal geometry of the device are revised by either the contractor or

32、 one of his sub-contractors supplying parts or assemblies. b. The contractor relocated his assembly facilities. C. The contractor uses a new sub-contractor for material, parts, or assembly. d, A change occurs in devicess material, performance or assemhly . 8 Provided by IHSNot for ResaleNo reproduct

33、ion or networking permitted without license from IHS-,-,-U H H Y 3 MIL-M-63324A 13 9999906 0348243 b I - . - . e4 t5 t rl f er I !2 r 13 Z - aJ m O a $4 rl a 4 0 O) a rn rn 7 h 8 a rl a u *I4 bo *d Fi U a * O a e s U c *d al -I om mhl m hl n n m mm hl N U U vu O0 mm +I+ VU O0 mm ma) I+ Wc9 (om h o g

34、 pl al LI vc V O m +I V O m w W (o LI al u al a LI a a ri (d 0 4 k U u al a 9 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-I MIL-M-b3324A 13 7777706 0348294 8 a 10 i Provided by IHSNot for ResaleNo reproduction or networking permitted without lice

35、nse from IHS-,-,-MIL-M-b3324A 13 W 7777706 O348245 T M MIL-M- 63 324A(AR) 4.4 Quality conformance inspection 4.4.1 Inspection lot formation. Inspection lot formation shall be as defined in MIL-M-38510 for Class B devices. 4.4.2 Examinations a. Quality conformance inspection. Quality conformance insp

36、ection shall consist of the inspections specified for Group A and Group B and when required Group C. inspection requirements shall be in accordance with the Classification of Defects and Tests specified in 4.4.2.1 of TABLE IV, Quality conformance b. Inspection requirements. Inspection requirements f

37、or this device shall be in accordance with the requirements of MIL-M-38510 and MIL-STD-883, Method 5005 for Groups A, B, and C tests except as modified herein. See 4.4.2.1 of TABLE IV. C. Screening, Screening shall be performed on all devices in accordance with the inspection flow specified in TABLE

38、 II. d. Sampling. Inspection samples of devices required by this specification shall be randomly selected from each inspection lot in accordance with Appendix B-1 of MIL-M-38510. 11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-i a i d z! il I: Y f

39、 s P E - W 4 O hl a m il E .rl al k 8 hl m 44v O U 0, e 4 VI . G CI H H al d H 9 . a al m 3 al P Ca al o 4 ? *al ma Sm rl LL bsM VIVI rlrl E Y s Y Y P 9 Z 9 o , I I al m O a k I Pl FI (d *rl U al a rn rn * 8 CI Pl (d U 9rl M .I4 Gl U *rl CI vu O0 VIVI +1+1 O0 mm me0 I+ UJei u O VI h +I 4 hl 4 . . .

40、- 12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-i 4.4.3 Testing. Testing is described in the First Article and Quality Conformance Inspection Tables. 4.4.4 Inspection equipment. The inspection equipment required to perform the examinations and t

41、ests prescribed herein is described in the Paragraph Reference/Inspection Method column in Tables III and IV. The contractor shall submit for approval inspection equipment designs in accordance with the terms of the contract (see 6.4). 4.5 Test methods, circuits and proceiiures. The contractor shall

42、 submit to the qualifying agency (6.5) for approval the test circuits and procedures to be used to measure the electrical characteristics of the device as specified in TABLE I. The information submitted shall identify the loading conditions on all device pins, the dynamic drive signal characteristic

43、s (type, magnitude, frequency, rise time, duration, fall time) applied to the device during each test, and the type of equipment used to make the measurement and how it is connected to the device under test, 4.5.1 Screening. Screening of devices shall be conducted as specified in Table II, in the se

44、quence shown, using only Government approved test equipment. Devices which fail any of the acceptance test criteria during the screening procedure shall be removed from the lot at the time of observation or immediately at the conclusion of the test in which the failure was observed. non-destructive

45、and only devices that pass all of the screening tests of Table II shall be returned to the lot. (Non-destructive). Testing is 4.5.2 Steady state life. Devices shall be subjected to the steady state life test in accordance with MIL-STD-883, Method 1005, Condition D, and as specified herein. Test dura

46、tion shall be 1000 hours minimum at 125% + 5OC. For this test the device shall be connected as shown in Fygure 1; the same test set up as for the burn-in test. Electrical parameters shall be measured before, during (see 3.5.4) and after the steady state life test in accordance with Method 1005. Obse

47、rvation shall be made for compliance with requirements of Table I and 3.5.4. (Non-destructive). 4.5.3 Static discharge (VZa,) test. Unless otherwise specified, one input terminal of the device under test (DUT) shall be subjected to avoltage pulse from a high voltage source. destructive test shall be

48、 conducted as follows using the test circuit on Figure 2. This 13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-S1 R2 1 1 -f.- I+ 2 ! l i I POWER i i j SUPPLY ! I vzap T I - +- - : 1 I Ri = 10 to 50 M-ohms Rp = 1.5 K-ohms Vzap = 400 Volts charge on Ci S1 = Hg. Wetted tlbounceless“ relay Ci = 100 pF FIGURE 2. Static discharge test circuit. a. Measure input current, high level (11) and low level (11) 25OC + 5OC at one input terminal of device under test (DUT). Also measure quiescent device current (IL) at 25OC + SOC. The test limit for