ASTM D5127-2012 Standard Guide for Ultra-Pure Water Used in the Electronics and Semiconductor Industries《电子学和半导体工业用超纯水的标准指南》.pdf

1、Designation: D5127 12Standard Guide forUltra-Pure Water Used in the Electronics andSemiconductor Industries1This standard is issued under the fixed designation D5127; the number immediately following the designation indicates the year oforiginal adoption or, in the case of revision, the year of last

2、 revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon () indicates an editorial change since the last revision or reapproval.1. Scope1.1 This guide provides recommendations for water qualityrelated to electronics and semiconductor-industry manufactur-ing. Sev

3、en classifications of water are described, includingwater for line widths as low as 0.032 micron. In all cases, therecommendations are for water at the point of distribution(POD).1.2 Water is used for washing and rinsing of semiconductorcomponents during manufacture. Water is also used for clean-ing

4、 and etching operations, making steam for oxidation ofsilicon surfaces, preparing photomasks, and depositing lumi-nescent materials. Other applications are in the developmentand fabrication of solid-state devices, thin-film devices, com-munication lasers, light-emitting diodes, photo-detectors,print

5、ed circuits, memory devices, vacuum-tube devices, orelectrolytic devices.1.3 Users needing water qualities different from those de-scribed here should consult other water standards, such asSpecification D1193 and Guide D5196.1.4 This standard does not purport to address all of thesafety concerns, if

6、 any, associated with its use. It is theresponsibility of the user of this standard to establish appro-priate safety and health practices and determine the applica-bility of regulatory limitations prior to use.2. Referenced Documents2.1 ASTM Standards:2D1129 Terminology Relating to WaterD1193 Specif

7、ication for Reagent WaterD1976 Test Method for Elements in Water by Inductively-Coupled Argon Plasma Atomic Emission SpectroscopyD2791 Test Method for On-line Determination of Sodiumin WaterD3919 Practice for Measuring Trace Elements in Water byGraphite Furnace Atomic Absorption SpectrophotometryD41

8、91 Test Method for Sodium in Water by Atomic Ab-sorption SpectrophotometryD4192 Test Method for Potassium in Water by AtomicAbsorption SpectrophotometryD4327 Test Method for Anions in Water by Suppressed IonChromatographyD4453 Practice for Handling of High Purity Water SamplesD4517 Test Method for L

9、ow-Level Total Silica in High-Purity Water by Flameless Atomic Absorption Spectros-copyD5173 Test Method for On-Line Monitoring of CarbonCompounds in Water by Chemical Oxidation, by UV LightOxidation, by Both, or by High Temperature CombustionFollowed by Gas Phase NDIR or by Electrolytic Conduc-tivi

10、tyD5196 Guide for Bio-Applications Grade WaterD5391 Test Method for Electrical Conductivity and Resis-tivity of a Flowing High Purity Water SampleD5462 Test Method for On-Line Measurement of Low-Level Dissolved Oxygen in WaterD5542 Test Methods for Trace Anions in High Purity Waterby Ion Chromatogra

11、phyD5544 Test Method for On-Line Measurement of ResidueAfter Evaporation of High-Purity WaterD5673 Test Method for Elements in Water by InductivelyCoupled PlasmaMass SpectrometryD5996 Test Method for Measuring Anionic Contaminantsin High-Purity Water by On-Line Ion ChromatographyD5997 Test Method fo

12、r On-Line Monitoring of Total Car-bon, Inorganic Carbon in Water by Ultraviolet, PersulfateOxidation, and Membrane Conductivity DetectionF1094 Test Methods for Microbiological Monitoring ofWater Used for Processing Electron and Microelectronic1This guide is under the jurisdiction of ASTM Committee D

13、19 on Water and isthe direct responsibility of Subcommittee D19.02 on Quality Systems, Specification,and Statistics.Current edition approved June 15, 2012. Published July 2012. Originallyapproved in 1990. Last previous edition approved in 2007 as D5127 07. DOI:10.1520/D5127-12.2For referenced ASTM s

14、tandards, visit the ASTM website, www.astm.org, orcontact ASTM Customer Service at serviceastm.org. For Annual Book of ASTMStandards volume information, refer to the standards Document Summary page onthe ASTM website.1Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocke

15、n, PA 19428-2959, United States.Devices by Direct Pressure Tap Sampling Valve and by thePresterilized Plastic Bag Method3. Terminology3.1 DefinitionsFor definitions of terms used in this guiderefer to Terminology D1129.3.2 Definitions of Terms Specific to This Standard:3.2.1 total bacterial counts,

16、ntotal number of cultureablemicroorganisms present in the named sample, excluding obli-gate anaerobic organisms, determined in accordance with TestMethods F1094.3.2.2 total organic carbon (TOC), ncarbon measuredafter inorganic-carbon response has been eliminated by one ofthe prescribed ASTM test met

17、hods.4. Significance and Use4.1 This guide recommends the water quality required forthe electronics and microelectronics industries. High-puritywater is required to prevent contamination of products duringmanufacture, since contamination can lead to an unacceptable,low yield of electronic devices.4.

18、2 The range of water purity is defined in accordance withthe manufacturing process. The types of ultra-pure water aredefined with respect to device line width. In all cases, thewater-quality recommendations apply at the point of distribu-tion.4.3 The limits on the impurities are related to currentco

19、ntamination specifications and to available analytical meth-ods (either performed in a suitable clean laboratory or byon-line instrumentation). On-line and off-line methods are usedin accordance with current industry practice. Concentration ofthe sample may be required to measure the impurities at t

20、helevels indicated in Table 1.5. Classification5.1 Seven types of electronic-grade water are described inthis guide. In all cases, the water-quality recommendationsapply at the point of distribution.5.1.1 Type E-1This water is classified as microelectronicwater to be used in the production of device

21、s having linewidths between 0.5 and 1.0 m.5.1.2 Type E-1.1This water is classified as microelec-tronic water to be used in the production of devices having linewidths between 0.25 and 0.35 m.5.1.3 Type E-1.2This water is classified as microelec-tronic water to be used in the production of devices ha

22、ving linewidths between 0.09 and 0.18 m.5.1.4 Type E-1.3This water is classified as microelec-tronic water to be used in production of devices having linewidths between 0.065 and 0.032m. This type is the water ofultimate practical purity produced in large volumes, and isintended for the most critica

23、l microelectronic uses. ASTMType E-1.3 is also identical to the SEMI (SemiconductorEquipment and Materials International) Guide for UltrapureWater Used in Semiconductor Processing (F063), 2010 ver-sion.5.1.5 Type E-2This water is classified as microelectronicwater to be used in the production of dev

24、ices that havedimensions between 1 and 5 m.5.1.6 Type E-3This grade of water is classified as macro-electronic water to be used in the production of devices havingdimensions larger than 5 m. This grade may be used toproduce larger components and some small components notaffected by trace amounts of

25、impurities.5.1.7 Type E-4This grade may be classified as water usedin preparation of plating solutions and for other applicationswhere the water being used can be of lesser quality.5.2 Components of the water system for producingelectronic-grade water shall be grouped into five generalprocess sectio

26、ns for the purpose of simplifying the organizationof the components of the systems. These processes are de-scribed in 5.2.1-5.2.5.5.2.1 PretreatmentThe processes in this category includethe addition of various types of coagulants, precipitatingagents, clarifiers, sedimentation tanks, and particulate

27、-filtrationsystems (including sand filters, disposable filter elements,ultrafilter membranes, and other particle-removing systems).Adsorbent or entrapment beds may include greensand, acti-vated carbon, and various synthetic materials specific forcertain organic and inorganic impurities.5.2.2 Desalin

28、ationThis process is fundamental to theproduction of ultra-pure water of all grades, and may includemore than one of the processes of ion exchange, reverseosmosis, electrodialysis, continuous electrodeionization, or allof the above. The size of the system governs the choice of thecombination of desa

29、lination processes. Various configurationsof the different processes should be considered, includingtwo-bed and mixed-bed demineralization, multi-stage reverseosmosis employing various types of membranes, electrodeion-ization, and electrodialysis.5.2.3 Organic and Biological Removal SystemsRemovalof

30、 biological and organic contaminants is an important adjunctto any system used to prepare ultra-pure water. Dissolvedorganic compounds can accumulate in the system during theprocess as well as being present in the original water. Methodsof minimizing biological contamination include the addition ofh

31、ydrogen peroxide and ozone. Ultraviolet irradiation at the 185nm wavelength provides intense energy for breaking chemicalbonds and produces traces of ozone. The 185 nm light lysesbacteria and breaks down organic compounds to organic acidsand carbon dioxide. Also formed are active intermediatereactan

32、ts; the main such reactant is the hydroxyl radical, whichinactivates bacteria. Variables such as water flow and degree ofcertain contaminants like turbidity, iron, and humic and fluvicacid should be considered to achieve the maximum effect fromthe irradiation. With the destruction of organics, TOC w

33、ill bereduced. Therefore, 185 nm light should only be used upstreamof the final ion-exchange component. Ultraviolet irradiation at254 nm significantly reduces the growth of organisms bydislocating the DNA base pairs. This process prevents thebacteria from replicating. Membrane filters (including rev

34、erseosmosis and ultrafilters) may also remove biological impuritiesas well as organic molecules. Synthetic adsorbent columnsranging from porous resins to activated carbon may be effec-tive in removing organics.5.2.4 Particulate RemovalParticulate removal in the pro-duction of ultra-pure water is dif

35、ferentiated from pretreatmentD5127 122that removes gross suspended substances. Particles of all types(biological, organic, or inorganic) significantly interfere withthe production of electronic components. Processes used toremove particulate matter generally consist of the use of aTABLE 1 Requiremen

36、ts for Water at the Point of Distribution in the Electronics and Semiconductor IndustriesAParameter Type E-1 Type E-1.1 Type E-1.2BType E-1.3BType E-2 Type E-3 Type E-4Linewidth (microns) 1.00.5 0.350.25 0.180.09 0.0650.032 5.01.0 5.0 Resistivity, 25C (On-line) 18.1 18.2 18.2 18.2 16.5 12 0.5TOC (g/

37、L) (on-line for 0.05 m 500C0.050.1 1000 200 N/AC0.10.2 1000 350 100 N/A 0.20.5 500 100 10 N/A 0.5-1.0 200 50 5 N/A 1.0 100 20 1 N/A SEM particles/L (micron range)0.10.2 1000 700 250 N/A 0.20.5 500 400 100 N/A 3000 0.51 100 50 30 N/A 10 000 10 50 30 10 N/A 100 000Bacteria in CFU/Volume100 mL Sample 5

38、 3 1 N/A 10 50 1001 L Sample 10 110 L Sample 1Silica total (g/L) 5 3 1 0.5 10 50 1000Silica dissolved (g/L) 3 1 0.5 0.5 Anions and Ammonium by IC (g/L)Ammonium 0.1 0.10 0.05 0.050 Bromide 0.1 0.05 0.02 0.050 Chloride 0.1 0.05 0.02 0.050 1 10 1000Fluoride 0.1 0.05 0.03 0.050 Nitrate 0.1 0.05 0.02 0.0

39、50 1 5 500Nitrite 0.1 0.05 0.02 0.050 Phosphate 0.1 0.05 0.02 0.050 1 5 500Sulfate 0.1 0.05 0.02 0.050 1 5 500Metals by ICP/MS (g/L)Aluminum 0.05 0.02 0.005 0.001 Antimony 0.001Arsenic 0.001Barium 0.05 0.02 0.001 0.001 BoronD0.3 0.1 0.05 0.050 Cadmium 0.010Calcium 0.05 0.02 0.002 0.001 Chromium 0.05

40、 0.02 0.002 0.001 Copper 0.05 0.02 0.002 0.001 1 2 500Iron 0.05 0.02 0.002 0.001 Lead 0.05 0.02 0.005 0.001 Lithium 0.05 0.02 0.003 0.001 Magnesium 0.05 0.02 0.002 0.001 Manganese 0.05 0.02 0.002 0.010 Nickel 0.05 0.02 0.002 0.001 1 2 500Potassium 0.05 0.02 0.005 0.001 2 5 500Sodium 0.05 0.02 0.005

41、0.001 1 5 1000Strontium 0.05 0.02 0.001 Tin 0.010Titanium 0.010Vanadium 0.010Zinc 0.05 0.02 0.002 0.001 1 5 500Temperature Stability (K) 61Temperature Gradient (K/10 min) 0.1Dissolved Nitrogen On-line (mg/L) 8-18Dissolved Nitrogen Stability (mg/L) 62AThe user should be advised that analytical data o

42、ften are instrument dependent and technique dependent. Thus, the numbers in Table 1 are only guidelines. This tablewill be revised whenever the semiconductor industry develops new linewidths, thereby keeping the guidelines current.BValues shown in Type E-1.3 are a result of aligning ITRS risk factor

43、s of known contaminates to the production processes found in current semiconductor processingfor the linewidth of interest and may differ in a few cases to those found in Type E-1.2. Users who wish to use the higher numbers for Type E-1.2 water should feel freeto do so.All values are equal to or les

44、s than with the exception of Resistivity.CParticle metrology has not kept pace with the decreasing line-width of semiconductor manufacturing. Current line-widths require the ability to monitor 20-nm particles.However, existing Optical Particle Counters (OPCs) are only capable of detecting 50-nm part

45、icles with a counting efficiency of 5%, and a background count (noise level)of 500 particles per liter. Particle-counting statistics become important as count levels approach the noise level. Therefore, the OPC setup and performance must beoptimized. Particle levels must consistently be within the n

46、oise level of any OPC (regardless of any specified level).DBoron is monitored only as an operational parameter for monitoring the ion-exchange beds.D5127 123microporous membrane structure of flat, cylindrical, or pleatedconfiguration. The Final Filters are preceded by a bank ofPrefilters with a 23 l

47、arger pore size. Ultrafilters and reverse-osmosis units may also be used for final filtration. The choiceof the particular membrane depends in part upon the pore size,characteristics of that membrane, and the size of particle to beremoved.As a general rule, particles should be removed if theyare lar

48、ger than 10 % of the minimum dimension of the devicebeing produced.5.2.5 Storage and Distribution SystemThe storage ofelectronic-grade water during production is very important,because impurities are added to the water in proportion to thesolubility of the impurities, the area of contact, and time o

49、fcontact between the water, the air, the materials of contain-ment, or combinations thereof. Because it is important tominimize the contact of the water with the storage container,the volume of storage should also be minimized. A loop-distribution design is preferred to an antenna-distributiondesign, the latter of which can constitute dead legs duringperiods of non-use. Particular emphasis must be placed uponthe atmosphe