ASTM E1161-2003 Standard Test Method for Radiologic Examination of Semiconductors and Electronic Components《半导体和电子元件放射性检验的标准试验方法》.pdf

1、Designation: E 1161 03Standard Test Method forRadiologic Examination of Semiconductors and ElectronicComponents1This standard is issued under the fixed designation E 1161; the number immediately following the designation indicates the year oforiginal adoption or, in the case of revision, the year of

2、 last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon (e) indicates an editorial change since the last revision or reapproval.1. Scope1.1 This test method provides a standard procedure fornondestructive radiographic examination of semiconductordevices, e

3、lectronic components, and the materials used forconstruction of these items. This test method covers theradiographic examination of these items for possible defectiveconditions such as extraneous material within the sealed case,improper internal connections, voids in materials used forelement mounti

4、ng, or the sealing glass, or physical damage.1.2 The quality level and acceptance criteria for the speci-mens being examined shall be specified in the detail drawing,purchase order or contract.1.3 This standard does not purport to address all of thesafety concerns, if any, associated with its use. I

5、t is theresponsibility of the user of this standard to establish appro-priate safety and health practices and determine the applica-bility of regulatory limitations prior to use.2. Referenced Documents2.1 ASTM Standards:E 94 Guide for Radiographic Examination2E 431 Guide to Interpretation of Radiogr

6、aphs of Semicon-ductors and Related Devices2E 543 Practice for Agencies Performing NondestructiveTesting2E 801 Practice for Controlling Quality of Radiological Ex-amination of Electronic Devices2E 1255 Practice for Radioscopy2E 1316 Terminology for Nondestructive Examinations22.2 ASNT Standard:3ANSI

7、/ASNT CP-189 Standard for Qualification and Certi-fication of Nondestructive Testing PersonnelSNT-TC-1A Personnel Qualification and Certification2.3 AIA Documents:NAS-410 Certification and Qualification of NondestructiveTest Personnel42.4 Federal Standard:FED-STD-595 Color (Requirements for Individu

8、al ColorChits)53. Terminology3.1 DefinitionsFor definitions of terms used in this testmethod, see Terminology E 1316.4. Significance and Use4.1 This test method is useful for determination of voidingin semiconductor element to header mounting material, glassseal, and lid seal areas. It is also usefu

9、l for examination of theinternal cavities of devices for extraneous material, wire dress,and bond placement for unattached elements.5. Basis of Application5.1 The following items are subject to contractual agree-ment between the parties using or referencing this standard.5.1.1 Personnel Qualificatio

10、nIf specified in the contrac-tual agreement, personnel performing examinations to thisstandard shall be qualified in accordance with a nationally orinternationally recognized NDT personnel qualification prac-tice or standard such as ANSI/ASNT-CP-189, SNT-TC-1A,NAS-410, or a similar document and cert

11、ified by the employeror certifying agency, as applicable. The practice or standardused and its applicable revision shall be identified in thecontractual agreement between the using parties.5.1.2 Qualification of Nondestructive Testing AgenciesIfspecified in the contractual agreement, NDT agencies sh

12、all bequalified and evaluated as described in Practice E 543. Theapplicable edition of Practice E 543 shall be specified in thecontractual agreement.5.1.3 Surface PreparationThe pre-examination surfacepreparation criteria shall be as specified in the contractualagreement.1This test method is under t

13、he jurisdiction of ASTM Committee E07 onNondestructive Testing and is the direct responsibility of Subcommittee E07.01 onRadiology (X and Gamma) Methods.Current edition approved June 10, 2003. Published August 2003. Originallyapproved in 1987. Last previous edition approved in 1995 as E 1161 95.2Ann

14、ual Book of ASTM Standards, Vol 03.03.3Available from the American Society for Nondestructive Testing, 1711 Arlin-gate Plaza, P.O. Box 28518, Columbus, OH 43228.4Aerospace Industries Association (AIA), 1050 Eye St., NW, Washington, DC20005.5Available from Standardization Documents Order Desk, Bldg.

15、4 Section D, 700Robbins Ave., Philadelphia, PA 19111-5094, Attn: NPODS.1Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.5.1.4 Timing of ExaminationThe timing of examinationshall be as specified in the contractual agreement.5.1.5 Exten

16、t of ExaminationThe extent of examinationshall be in accordance with paragraph 9.2.1.1 or 9.2.1.2 unlessotherwise specified.5.1.6 Reporting Criteria/Acceptance CriteriaReportingcriteria for the examination results shall be as specified in thecontractual agreement. Since acceptance criteria (for exam

17、ple,for reference radiographs) are not specified in this standard,they shall be specified in the contractual agreement.5.1.7 Reexamination of Repaired/Reworked ItemsReexamination of repaired/reworked items is not addressed inthis standard and if required shall be specified in the contrac-tual agreem

18、ent.6. Apparatus6.1 Radiation SourceOnly X-radiation generating equip-ment shall be used. It shall provide the proper quality level andfilm density when used in accordance with this test method.6.1.1 Focal SpotThe focal spot size shall be such that theresolution specified in 9.4 can be achieved.6.2

19、Radiographic Viewer, capable of resolving a flaw of0.025 mm at a density of 1.0 to 2.0.6.3 Holding Fixtures, capable of holding specimens in therequired positions without interfering with the accuracy or easeof interpretation.6.4 Lead-Topped TablesPerform all semiconductor andelectronic component ra

20、diographic examination on a lead-topped table. The lead shall be at least 1.5 mm thick.6.5 Film HoldersFilm holders and cassettes shall be lighttight. They may be flexible vinyl, plastic, or other durablematerial.6.6 IQIs, shall be in accordance with Practice E 801.6.7 Density Measurement ApparatusU

21、se a densitometercapable of repeatable measurements within 0.02 density unitsand step wedge comparison films.7. Materials7.1 FilmsFilms used for radiographic examination ofsemiconductors and electronic components must be very finegrain. The grain must be fine enough to permit resolution ofdiscontinu

22、ities that are 0.025 mm.7.2 Non-Film Techniques, When SpecifiedThe use ofnon-film techniques is permitted if agreed upon betweenpurchaser and supplier and the equipment is capable ofproducing results of equal quality when compared with filmtechniques, and all requirements of this test method arecomp

23、lied with, except those pertaining to the actual film. Typesof permanent records using non-film techniques if required are,for example, digital magnetic tape or disc, video tape, andphotograph of video image.8. Calibration8.1 The step wedge comparison films used for densitometercalibration shall be

24、currently calibrated with traceability to theNational Institute of Standards and Technology.9. Procedure9.1 Select or adjust the X-ray exposure factors, voltage,milliampere setting, and time settings as necessary to obtainsatisfactory exposures and image detail within the sensitivityrequirements for

25、 the device or defect features toward which theradiographic examination is directed. The X-ray voltage shallbe the lowest consistent with these requirements and shall notexceed 150kV.9.2 Mounting and ViewsMount the devices in the holdingfixture so that the devices are not damaged or contaminated and

26、are in the proper plane as specified. The devices may bemounted in any type of fixture and masking with lead dia-phragms or barium clay may be employed to isolate multipledevices. The fixtures or masking materials must not block theview from the X-ray source to the film of any portion of thebody of

27、the device that requires examination.9.2.1 Views:9.2.1.1 Take one view of flat packages, dual-in-line pack-ages, and single-ended cylindrical devices, unless otherwisespecified, with the X-rays penetrating in the Y direction asshown in Figs. 1 and 2. When more than one view is required,take the seco

28、nd and third views, as applicable, with the X-rayspenetrating in the Z and X directions respectively. Position thedie/cavity interface as close as possible to the film to avoiddistortion.9.2.1.2 Take one view of stud-mounted and cylindrical axiallead devices, unless otherwise specified, with the X-r

29、ayspenetrating in the X direction as defined in Figs. 1 and 2. Whenmore than one view is required, take the second and thirdviews, as applicable, with the X-rays penetrating in the Zdirection and at 45 between the X and Z directions. Positionthe die/cavity interface as close as possible to the film

30、to avoiddistortion.9.3 Radiographic Image Quality Indicators (IQIs)Eachradiograph shall have at least two IQIs exposed with eachview located (and properly identified) in opposite corners ofthe film. These IQIs shall be selected and used in accordanceFIG. 1 Orientation of Noncylindrical Semiconductor

31、 Device to Direction of Accelerating ForceE1161032with, and shall meet the requirements of, Practice E 801. Forradioscopic images (where allowed) the additional require-ments of Practice E 1255 shall be met.9.4 Film and MarkingPlace the radiographic film in a filmholder on the lead-topped table. Ide

32、ntify the film using tech-niques that print the following information, photographically,on the radiograph:9.4.1 Marking:9.4.1.1 Device manufacturers name or code identificationnumber.9.4.1.2 Device type or part number.9.4.1.3 Production lot number or date code or examinationlot number.9.4.1.4 Radiog

33、raphic film view number and date.9.4.1.5 Device serial or cross-reference numbers, whenapplicable.9.4.1.6 X-ray laboratory identification, if other than devicemanufacturer.9.4.2 Serialized DevicesWhen device serialization is re-quired, identify each device readily by a serial number.Radiograph in co

34、nsecutive, increasing serial order. When adevice is missing, the blank space shall contain either the serialnumber or other X-ray objects to readily identify and correlateX-ray data. When large skips occur within serialized devices,the serial number of the last device before the skip and the firstde

35、vice after the skip may be used in place of the multipleopaque objects.9.4.3 Special Device MarkingWhen specified, identifythe devices that have been X-rayed and found acceptable witha contrasting color dot on the external case. The dot shall beapproximately 1.5 mm in diameter. The color selected fr

36、omFED-STD-595 shall be any shade agreed upon between clientand purchaser. Place the dot so that it is readily visible but doesnot obliterate other device marking.9.5 ExaminationsSelect the X-ray exposure factors toachieve resolution of a flaw of 0.0254 mm, less than 10 %distortion, and a film densit

37、y between 1 and 2 in the area ofinterest of the device image. Make radiographs for each viewrequired.9.6 ProcessingProcess the radiographic film in accor-dance with Guide E 94 unless otherwise specified, and processfilm so that it is free of processing defects such as fingerprints,scratches, fogging

38、, chemical spots, blemishes, and the like.9.7 Interpretation of RadiographsUtilizing the equipmentspecified herein, inspect radiographs to determine that eachdevice conforms to the criteria agreed upon by the seller andthe buyer. Guide E 431 provides many useful illustrationswhich may aid in this in

39、terpretation. Interpretation of theradiograph shall be made under low light level conditionswithout glare on the radiographic viewing surface. Examinethe radiographs on a suitable illuminator with variable intensityor on a viewer suitable for radiographic examination onprojection-type viewing equipm

40、ent. View the radiograph at amagnification between 63 and 253. Viewing masks may beused when necessary. Any radiograph not clearly illustratingthe features in the radiographic quality standards is notacceptable and another radiograph of the devices shall betaken.10. Precision and Bias10.1 The precis

41、ion and bias of this test method are depen-dent upon the calibration of the film comparison step wedgeand the use of appropriate paragraphs of Practice E 801.11. Keywords11.1 electronic devices; nondestructive testing; radio-graphic; radioscopy; semiconductors; X-RayFIG. 2 Orientation of Cylindrical

42、 Semiconductor Device to Direction of Accelerating ForceE1161033ASTM International takes no position respecting the validity of any patent rights asserted in connection with any item mentionedin this standard. Users of this standard are expressly advised that determination of the validity of any suc

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