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本文(ASTM E3071-2016 Standard Guide for Nanotechnology Workforce Education in Materials Synthesis and Processing《材料合成和加工中纳米技术劳动力教育的标准指南》.pdf)为本站会员(boatfragile160)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

ASTM E3071-2016 Standard Guide for Nanotechnology Workforce Education in Materials Synthesis and Processing《材料合成和加工中纳米技术劳动力教育的标准指南》.pdf

1、Designation: E3071 16Standard Guide forNanotechnology Workforce Education in MaterialsSynthesis and Processing1This standard is issued under the fixed designation E3071; the number immediately following the designation indicates the year oforiginal adoption or, in the case of revision, the year of l

2、ast revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon () indicates an editorial change since the last revision or reapproval.1. Scope1.1 This guide provides a framework for a basic workforceeducation in materials synthesis and processing at thenanoscale, t

3、o be taught at an undergraduate college level. Thiseducation should be broad to prepare an individual to servewithin one of the many areas in nanotechnology research,development, or manufacturing.1.2 This guide may be used to develop or evaluate aneducation program for synthesis and processing appli

4、cations inthe nanotechnology field. This guide provides listings of keytopics that should be covered in a nanotechnology educationprogram on this subject, but it does not provide specific coursematerial to be used in such a program. This approach is takenin order to allow workforce education entitie

5、s to ensure theirprograms cover the required material while also enabling theseinstitutions to tailor their programs to meet the needs of theirlocal employers.1.3 While no units of measurements are used in thispractice, values stated in SI units are to be regarded asstandard.1.4 This standard does n

6、ot purport to address all of thesafety concerns, if any, associated with its use. It is theresponsibility of the user of this standard to establish appro-priate safety and health practices and determine the applica-bility of regulatory limitations prior to use.1.5 This standard does not purport to a

7、ddress all of thetechniques, materials, and concepts needed for materialssynthesis and processing at the nanoscale. It is the responsi-bility of the user of this standard to utilize other knowledge andskill objectives as applicable to local conditions or required bylocal regulations.2. Referenced Do

8、cuments2.1 ASTM Standards:2E2456 Terminology Relating to NanotechnologyE2996 Guide for Workforce Education in NanotechnologyHealth and Safety2.2 ISO Standards:3ISO/TS 80004-2 Nanotechnologies Vocabulary Part 2:Nano-ObjectsISO/TS 80004-8 Nanotechnologies Vocabulary Part 8:Nanomanufacturing Processes3

9、. Terminology3.1 Definitions:3.1.1 For definitions of terms related to nanotechnology ingeneral, refer to Terminology E2456 and ISO/TS 80004-2.3.1.2 For definitions of terms related to nanotechnologysynthesis and processing in general, refer to ISO/TS 80004-8.3.2 Definitions of Terms Specific to Thi

10、s Standard:3.2.1 additive processing, nadding a layer of newmaterial, in order to leave a pattern of deposited material on thesubstrate. ISO/TS 80004-83.2.2 materials processing, nthe technique(s) used totransform industrial materials from an initial or intermediatestate into modified or finished pa

11、rts or products.3.2.3 materials synthesis, nprocess(s) or reaction(s) forbuilding up a complex material or structure by the union ofsimpler compounds or elements.3.2.4 nanoparticle, na nano-object with all external di-mensions in the nanoscale where the lengths of the longest andthe shortest axes of

12、 the nano-object do not differ significantly.ISO/TS 80004-21This guide is under the jurisdiction of ASTM Committee E56 on Nanotech-nology and is the direct responsibility of Subcommittee E56.07 on Education andWorkforce Development.Current edition approved Dec. 1, 2016. Published December 2016. DOI:

13、10.1520/E3071-16.2For referenced ASTM standards, visit the ASTM website, www.astm.org, orcontact ASTM Customer Service at serviceastm.org. For Annual Book of ASTMStandards volume information, refer to the standards Document Summary page onthe ASTM website.3Available from International Organization f

14、or Standardization (ISO), ISOCentral Secretariat, BIBC II, Chemin de Blandonnet 8, CP 401, 1214 Vernier,Geneva, Switzerland, http:/www.iso.org.Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United StatesThis international standard was developed in

15、 accordance with internationally recognized principles on standardization established in the Decision on Principles for theDevelopment of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.13.2.5 subtractive processi

16、ng, nremoval of material exceptwhere the surface is protected by the patterned resist.ISO/TS 80004-84. Summary of Guide4.1 This guide designates a list of nanoscale synthesis andprocessing subject areas relevant to nanotechnology workforceeducation. Selection of the areas is based on inputs fromindu

17、stry, nanotechnology educators and subject matter experts.4.2 Within each subject area, important topics to be coveredare listed specifically.4.3 This approach provides both a broad education as wellas in-depth emphasis for key subjects within the time con-straints of an instructional course or prog

18、ram.5. Significance and Use5.1 This guide establishes the basic structure for educationin the synthesis and processing of nanoscale materials at theundergraduate college level.5.2 Workers may transition in their roles in the workplace.Participants in such education will have a broad understandingof

19、a complement of synthesis and processing topics, thusincreasing their marketability for jobs within as well as beyondthe nanotechnology field.5.3 This guide is intended to be one in a series of standardsdeveloped for workforce education in various aspects ofnanotechnology. It will assist in providin

20、g an organization abasic structure for developing a program applicable to manyareas in nanotechnology, thus providing dynamic and evolvingworkforce education.6. General Background Knowledge and Skills6.1 Introductory algebra, chemistry, physics, and statistics atthe college level.6.2 The environment

21、al, health, and safety (EHS) hazardspresented by nanoscale materials can be very different fromthose presented by bulk materials. Students should have a basicunderstanding of the unique EHS factors when handlingnanoscale materials (see Note 1).NOTE 1See Guide E2996 for details.6.3 Students should al

22、so have a basic knowledge of thephysical and chemical properties of nanoscale materials.7. Concepts and Skills to be Covered7.1 The methods relevant for workforce education in nano-technology regarding synthesis and processing are given inSection 8, with important topics to be covered for each metho

23、dlisted specifically. Teaching of these topics should includecomparing and contrasting different techniques. Additionalmethods or topics, or both, may be added on an as-neededbasis.7.2 Nanoscale synthesis and processing methods coveredshould include ones based on commonly used additive andsubtractiv

24、e material processing. Method selection is based oninputs from industry, nanotechnology educators and subjectmatter experts.8. Synthesis and Processing Concepts and Techniquesrelevant to Nanotechnology Workforce Education8.1 Material ConsiderationsStructure and basic processesthat affect properties:

25、8.1.1 Crystal structure.8.1.2 Defects.8.1.3 Bonding.8.1.4 Stress.8.1.5 Diffusion.8.1.6 Annealing.8.1.7 Adhesion and delamination.8.1.8 Aggregation, agglomeration, and suspension (seeNote 2).NOTE 2These processes are applicable to nanoparticles.8.2 Concepts of Additive Processing:8.2.1 Growth and Dep

26、osition Considerations:8.2.1.1 Nucleation.8.2.1.2 Thickness control.8.2.1.3 Uniformity.8.2.1.4 Step coverage.8.2.1.5 Homogeneous growth.8.2.1.6 Heterogeneous growth.8.2.1.7 Surface modification:(1) Morphology modification.(2) Chemical modification (see Note 3).NOTE 3For example, a method such as mol

27、ecular self-assemblywould fall under this category.(3) Biological functionalization.8.3 Growth and Deposition Techniques:8.3.1 Oxidation:8.3.1.1 Dry oxidation.8.3.1.2 Wet oxidation.8.3.1.3 High-pressure oxidation.8.3.2 Physical Vapor Deposition (PVD):8.3.2.1 Thermal and electron beam evaporation.8.3

28、.2.2 Sputter deposition.8.3.3 Chemical Vapor Deposition (CVD):8.3.3.1 Atmospheric Pressure Chemical Vapor Deposition(APCVD).8.3.3.2 Low Pressure Chemical Vapor Deposition (LP-CVD):(1) Vapor-Solid (VS) growth technique.(2) Vapor-Liquid-Solid (VLS) growth technique.8.3.3.3 Plasma Enhanced Chemical Vap

29、or Deposition(PECVD).8.3.4 Atomic Layer Deposition (ALD):8.3.4.1 Thermal Atomic Layer Deposition.8.3.4.2 Plasma Enhanced Atomic Layer Deposition(PEALD).8.3.5 Epitaxial Growth:8.3.5.1 Metal Organic Chemical Vapor Deposition(MOCVD).8.3.5.2 Molecular Beam Epitaxy (MBE).E3071 1628.3.6 Solution Based Dep

30、osition:8.3.6.1 Electrochemical deposition (plating).8.3.6.2 Anodization.8.3.6.3 Spin coating (see Note 4).NOTE 4For example, the deposition of a spin-on glass layer to forma planarizing dielectric or provide a dopant source in the fabrication ofintegrated circuits would fall under this category.8.4

31、 Techniques for Fabricating Discrete Nanoparticles:8.4.1 Nanoparticle Synthesis and Stabilization:8.4.1.1 Flame pyrolysis.8.4.1.2 Laser ablation.8.4.1.3 Wet chemistry:(1) Bulk colloidal methods.(2) Microfluidic synthesis using microreactors.8.4.1.4 Mechanical attrition.8.5 Concepts of Subtractive Pr

32、ocessing:8.5.1 Etching Considerations:8.5.1.1 Selectivity.8.5.1.2 Profile control:(1) Aspect ratio.(2) Anisotropic etching.(3) Isotropic etching.8.5.1.3 Etch rate.8.5.1.4 Etch damage.8.5.2 Wet Etching:8.5.2.1 Chemistries.8.5.2.2 Crystal plane orientation dependent etching.8.5.2.3 Dopant control of e

33、tching.8.5.3 Chemical mechanical planarization (see Note 5).NOTE 5The process is also known as chemical mechanical polishing.8.5.4 Dry Etching:8.5.4.1 Plasma generation:(1) Optical emission and end point detection.8.5.4.2 Plasma etching (no ion bombardment).8.5.4.3 Reactive Ion Etching (RIE).8.5.4.4

34、 Sputter etching (ion milling).8.5.4.5 Focused Ion Beam (FIB).8.5.4.6 Dry etch systems:(1) Inductively coupled plasma.(2) Capacitively coupled plasma.(3) Ashing systems.(4) Sputter etch.8.5.5 Vapor etching (see Note 6).NOTE 6For example, etching with vapors of hydrofluoric acid orxenon diflouride wo

35、uld fall under this category.9. Keywords9.1 nanotechnology; materials synthesis; materials process-ing; workforce educationRELATED MATERIALE2535 Standard Guide for Handling Unbound Engineered NanoscaleParticles in Occupational SettingsE3001 Standard Practice for Workforce Education in Nanotechnology

36、CharacterizationE3034 Standard Guide for Workforce Education in NanotechnologyPattern GenerationE3059 Standard Guide for Workforce Education in NanotechnologyInfrastructureASTM International takes no position respecting the validity of any patent rights asserted in connection with any item mentioned

37、in this standard. Users of this standard are expressly advised that determination of the validity of any such patent rights, and the riskof infringement of such rights, are entirely their own responsibility.This standard is subject to revision at any time by the responsible technical committee and m

38、ust be reviewed every five years andif not revised, either reapproved or withdrawn. Your comments are invited either for revision of this standard or for additional standardsand should be addressed to ASTM International Headquarters. Your comments will receive careful consideration at a meeting of t

39、heresponsible technical committee, which you may attend. If you feel that your comments have not received a fair hearing you shouldmake your views known to the ASTM Committee on Standards, at the address shown below.This standard is copyrighted by ASTM International, 100 Barr Harbor Drive, PO Box C7

40、00, West Conshohocken, PA 19428-2959,United States. Individual reprints (single or multiple copies) of this standard may be obtained by contacting ASTM at the aboveaddress or at 610-832-9585 (phone), 610-832-9555 (fax), or serviceastm.org (e-mail); or through the ASTM website(www.astm.org). Permission rights to photocopy the standard may also be secured from the Copyright Clearance Center, 222Rosewood Drive, Danvers, MA 01923, Tel: (978) 646-2600; http:/ 163

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