1、Designation: F 1892 06Standard Guide forIonizing Radiation (Total Dose) Effects Testing ofSemiconductor Devices1This standard is issued under the fixed designation F 1892; the number immediately following the designation indicates the year oforiginal adoption or, in the case of revision, the year of
2、 last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon (e) indicates an editorial change since the last revision or reapproval.INTRODUCTIONThis guide is designed to assist investigators in performing ionizing radiation effects testing ofsemiconductor devi
3、ces, commonly termed total dose testing. When actual use conditions, whichinclude dose, dose rate, temperature, and bias conditions and the time sequence of application of theseconditions, are the same as those used in the test procedure, the results obtained using this guideapplies without qualific
4、ation. For some part types, results obtained when following this guide aremuch more broadly applicable. There are many part types, however, where care must be used inextrapolating test results to situations that do not duplicate all aspects of the test conditions in whichthe response data were obtai
5、ned. For example, some linear bipolar devices and devices containingmetal oxide semiconductor (MOS) structures require special treatment. This guide provides directionfor appropriate testing of such devices.1. Scope1.1 This guide presents background and guidelines forestablishing an appropriate sequ
6、ence of tests and data analysisprocedures for determining the ionizing radiation (total dose)hardness of microelectronic devices for dose rates below 300rd(SiO2)/s. These tests and analysis will be appropriate to assistin the determination of the ability of the devices under test tomeet specific har
7、dness requirements or to evaluate the parts foruse in a range of radiation environments.1.2 The methods and guidelines presented will be applicableto characterization, qualification, and lot acceptance of silicon-based MOS and bipolar discrete devices and integrated cir-cuits. They will be appropria
8、te for treatment of the effects ofelectron and photon irradiation.1.3 This guide provides a framework for choosing a testsequence based on general characteristics of the parts to betested and the radiation hardness requirements or goals forthese parts.1.4 This guide provides for tradeoffs between mi
9、nimizingthe conservative nature of the testing method and minimizingthe required testing effort.1.5 Determination of an effective and economical hardnesstest typically will require several kinds of decisions. A partialenumeration of the decisions that typically must be made is asfollows:1.5.1 Determ
10、ination of the Need to Perform DeviceCharacterizationFor some cases it may be more appropriateto adopt some kind of worst case testing scheme that does notrequire device characterization. For other cases it may be mosteffective to determine the effect of dose-rate on the radiationsensitivity of a de
11、vice. As necessary, the appropriate level ofdetail of such a characterization also must be determined.1.5.2 Determination of an Effective Strategy for Minimizingthe Effects of Irradiation Dose Rate on the Test ResultTheresults of radiation testing on some types of devices arerelatively insensitive t
12、o the dose rate of the radiation applied inthe test. In contrast, many MOS devices and some bipolardevices have a significant sensitivity to dose rate. Severaldifferent strategies for managing the dose rate sensitivity of testresults will be discussed.1.5.3 Choice of an Effective Test MethodologyThe
13、 selec-tion of effective test methodologies will be discussed.1.6 Low Dose RequirementsHardness testing of MOS andbipolar microelectronic devices for the purpose of qualificationor lot acceptance is not necessary when the required hardnessis 100 rd(SiO2) or lower.1.7 SourcesThis guide will cover eff
14、ects due to devicetesting using irradiation from photon sources, such as60Co girradiators,137Cs g irradiators, and low energy (approximately1This guide is under the jurisdiction of ASTM Committee F01 on Electronicsand is the direct responsibility of Subcommittee F01.11 on Quality HardnessAssurance.C
15、urrent edition approved July 1, 2006. Published August 2006. Originallyapproved in 1998. Last previous edition approved in 2004 as F 1892 04.1Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.10 keV) X-ray sources. Other sources of test
16、 radiation such aslinacs, Van de Graaff sources, Dymnamitrons, SEMs, and flashX-ray sources occasionally are used but are outside the scopeof this guide.1.8 Displacement damage effects are outside the scope ofthis guide, as well.1.9 The values stated in SI units are to be regarded as thestandard.2.
17、Referenced Documents2.1 ASTM Standards:2E 170 Terminology Relating to Radiation Measurementsand DosimetryE 666 Practice for Calculating Absorbed Dose FromGamma or X RadiationE 668 Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for DeterminingAbsorbed Dosein Radiation-Hardness
18、 Testing of Electronic DevicesE 1249 Practice for Minimizing Dosimetry Errors in Radia-tion Hardness Testing of Silicon Electronic Devices UsingCo-60 SourcesE 1250 Test Method for Application of Ionization Cham-bers to Assess the Low Energy Gamma Component ofCobalt-60 Irradiators Used in Radiation-H
19、ardness Testingof Silicon Electronic DevicesE 1467 Specification for Transferring Digital Neurophysi-ological Data Between Independent Computer Systems3ISO/ASTM 51275 Practice for Use of a Radiochromic FilmDosimetry System2.2 Military Specifications:MIL-STD-883, Method 1019, Ionizing Radiation (Tota
20、lDose) Test Method4MIL-STD-750, Method 1019, Steady-State Total Dose Irra-diation Procedure4MIL-HDBK-814 Ionizing Dose and Neutron Hardness As-surance Guidelines for Microcircuits and SemiconductorDevices43. Terminology3.1 For terms relating to radiation measurements and do-simetry, see Terminology
21、E 170.3.2 Definitions of Terms Specific to This Standard:3.2.1 accelerated annealing test, nprocedure utilizingelevated temperature to accelerate time-dependent growth andannealing of trapped charge.3.2.2 category A, nused to refer to a part containingbipolar structures that is not low dose rate sen
22、sitive.3.2.3 category B, nused to refer to a part containingbipolar structures that is low dose rate sensitive.3.2.4 characterization, ntesting to determine the effect ofdose, dose-rate, bias, temperature, etc. on the radiation induceddegradation of a part.3.2.5 delayed reaction rate effect (DRRE),
23、na time andtemperature dependent effect where the rate of degradation fora second irradiation is much greater than the rate of degrada-tion for the first irradiation after a delay time that is dependenton the temperature of the part during the time between the twoirradiations.3.2.6 enhanced low dose
24、 rate sensitivity (ELDRS), nusedto refer to a bipolar part that shows enhanced (greater)radiation induced damage for a fixed dose at dose rates belowabout 50 rd(SiO2)/s compared to damage at the same dose fordose rates of 50 rd(SiO2)/s. The enhancement may be a resultof true dose rate effects or tim
25、e dependent effects, or both.3.2.7 gray, nthe gray (Gy) symbol, is the SI unit ofabsorbed dose, defined as 1 Gy = 1 J/kg (1 Gy = 100 rd).3.2.8 in-flux tests, nmeasurements made in-situ while thetest device is in the radiation field.3.2.9 in-situ tests, nelectrical measurements made ondevices during,
26、 or before-and-after, irradiation while theyremain in the irradiation location.3.2.10 in-source tests, nan in-flux test.3.2.11 ionizing radiation effects, nthe changes in theelectrical parameters of a microelectronic device resulting fromradiation-induced trapped charge.3.2.11.1 DiscussionIonizing r
27、adiation effects are some-times referred to as“ total dose effects.”3.2.11.2 DiscussionIn this guide, doses and dose rates arespecified in rd(SiO2) as contrasted with the use of rd(Si) inother related standards. The reason is that for ionizing radiationeffects in silicon based microelectronic compon
28、ents, it is theenergy deposited in the SiO2gate, field, and spacer oxides thatis responsible for the radiation-induced degradation effects. Forhigh energy irradiation, for example,60Co photons, the differ-ence between dose deposited in Si and SiO2typically isnegligible. For X-ray irradiation, approx
29、imately 10 keV photonenergy, the energy deposited in Si under some circumstancesmay be approximately 1.8 times the energy deposited in SiO2.For additional details, see Guide F 1467.3.2.12 not in-flux test, nelectrical measurements made ondevices at any time other than during irradiation.3.2.13 overt
30、est, na factor that is applied to the specifica-tion dose to determine the test dose level that the samples mustpass to be acceptable at the specification level. An overtestfactor of 1.5 means that the parts must be tested at 1.5 times thespecification dose.3.2.14 parameter delta design margin (PDDM
31、), na de-sign margin that is applied to the radiation induced change inan electrical parameter.3.2.14.1 DiscussionFor example, for a PDDM of 3 thechange in a parameter at a specified dose from the pre-irradiation value is multiplied by three and added to thepost-irradiation value to see if the sampl
32、e exceeds the post-irradiation parameter limit. For example, if the pre-irradiationvalue of Ibis 30 nA and the post-irradiation value at 20krd(SiO2) is 70 nA (change in Ibis 40 nA), then for a PDDMof 3 the post-irradiation value would be 150 nA (30 nA + 3 X40 nA). If the allowable post-irradiation l
33、imit is 100 nAthe partwould fail.2For referenced ASTM standards, visit the ASTM website, www.astm.org, orcontact ASTM Customer Service at serviceastm.org. For Annual Book of ASTMStandards volume information, refer to the standards Document Summary page onthe ASTM website.3Withdrawn.4Available from t
34、he Standardization Documents Order Desk, Building 4, SectionD, 700 Robbins Ave., Philadelphia, PA 191115094.F18920623.2.15 qualification, ntesting to determine the adequacyof a part to meet the requirements of a specific application.3.2.16 rad, nthe rad symbol, rd, is a commonly used unitfor absorbe
35、d dose, defined in terms of the SI unit of absorbeddose as 1 rd = 0.01 Gy.3.2.17 remote tests, nelectrical measurements made ondevices that are removed physically from the irradiationlocation for the measurements.3.2.18 time dependent effects (TDE), nthe time dependentgrowth and annealing of ionizin
36、g radiation induced trappedcharge and interface states and the resulting transistor or ICparameter changes caused by these effects.3.2.18.1 DiscussionSimilar effects also take place duringirradiation. Because of the complexity of time dependenteffects, alternative, but not inconsistent, definitions
37、may proveuseful. Two of these are: the complex of time-dependentprocesses that alter trapped oxide change (DNot) and interfacetrap density (DNit) in an MOS or bipolar structure during andafter irradiation; and, the effects of these processes upon deviceor circuit characteristics or performance, or b
38、oth.3.2.19 true dose rate effect, na response that occursduring low dose rate irradiation that cannot be reproduced witha high dose rate irradiation followed by an equivalent timeanneal.4. Summary of Guide4.1 This guide is designed to provide an introduction anddirection to the purposes, methods, an
39、d strategies of totalionizing dose testing.4.1.1 PurposesDevice or system hardness may be mea-sured for several different purposes. These may include devicecharacterization, device qualification, lot acceptance, linequalification, and studies of device physics.4.1.2 Methods:4.1.2.1 An ionizing radia
40、tion effects test consists of per-forming a set of electrical measurements on a device, exposingthe device to ionizing radiation while appropriately biased, andthen performing a set of electrical measurements either duringor after irradiation.4.1.2.2 Because several factors enter into the effects of
41、 theradiation on the device, parties to the test must establish andagree to a variety of conditions before the validity of the testcan be established or before the results of any one test can becompared with those of another. Conditions that must beestablished and agreed to include the following:(a)
42、 Radiation SourceThe type of radiation source (60Co,X-ray, etc.) that is to be used.NOTE 1The ionizing dose response of many device types has beenshown to depend on the type of ionizing radiation to which the device issubjected. The selection of a suitable radiation source for use in such a testmust
43、 be based on the understanding that the gamma or electron radiationsource will induce a device response that then should be correlated to theresponse anticipated in the device application.(b) Dose Rate RangeThe range of dose rates within whichthe radiation exposures must take place (see 6.4).NOTE 2T
44、he response of many devices has been shown to be highlydependent on the rate at which the dose is accumulated. There must be ademonstrated correlation between the response of the device under theselected test conditions and the rate at which the device would be expectedto accumulate dose in its inte
45、nded application.(c) Operating ConditionsThe test circuit, electrical biasesto be applied, and the electrical operating sequence, if appli-cable, for the part during irradiation (see 6.3). This includes theuse of in-flux or not in-flux testing.(d) Electrical ParametersThe measurements that are to be
46、made on the test devices before, during (if appropriate), andafter (if appropriate) irradiation.(e) Time SequenceThe exposure time, the elapsed timebetween exposure and post-exposure measurements, and thetime between irradiations (see 6.5).(f) Irradiation LevelsThe dose(s) to which the test deviceis
47、 to be exposed between measurements (see Practice E 666).(g) DosimetryThe dosimetry technique (TLDs, calorim-eters, diodes, etc.) to be used. This depends to some extent onthe radiation source selection.(h) TemperatureExposure, measurement, and storage tem-perature ranges (see 6.5 and 6.6).(i) Exper
48、imental ConfigurationThe physical arrangementof the radiation source, test unit, radiation shielding, and anyother mechanical or electrical elements of the test.(j) Accelerated Annealing Testing for MOSThe acceler-ated annealing tests called for in 8.2.2.3 (a) through (e) shouldbe performed for hard
49、ness assurance testing of any device thatcontains MOS elements by design. Further requirements andexceptions to such accelerated annealing testing may be madebased on the factors discussed in Appendix X1.(k) Special Testing for Linear Bipolar The special testingprocedures called for in 8.1.2.1 through 8.1.2.4 (e), and 8.2.3.1through 8.2.3.4 should be performed for hardness assurancetesting of linear bipolar devices. Further requirements andsuggestions for the testing of linear bipolar devices will befound in Appendix X2.4.1.3 StrategiesSeve
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