BS CECC 90111-1987 Specification for harmonized system of quality assessment for electronic components - Blank detail specification - MOS read write static memories silicon monolit.pdf

1、BRITISH STANDARD BS CECC 90111:1987 Incorporating Amendment No. 1 Specification for Harmonized system of quality assessment for electronic components Blank detail specification MOS read/write static memories silicon monolithic circuitsBSCECC90111:1987 BSI 10-1999 ISBN 0 580 35602 7 Amendments issued

2、 since publication Amd. No. Date of issue Comments 8164 March 1994 Indicated by a sideline in the marginBSCECC90111:1987 BSI 10-1999 i Contents Page National foreword ii Foreword ii General 1 1 Type description 2 2 Operating characteristics 3 3 Identification of the device types 8 4 Test and measure

3、ment procedures 8 5 Structural similarity of memories 9 6 Qualification approval procedures 9 7 Capability approval procedures 9 8 Screening procedures 9 9 Inspection requirements 10BSCECC90111:1987 ii BSI 10-1999 National foreword This British Standard has been prepared under the direction of the E

4、lectronic Components Standards Committee. It is identical with CENELEC Electronic Components Committee (CECC)90111:1986 “Harmonized system of quality assessment for electronic components Blank detail specification: MOS read/write static memories silicon monolithic circuits”. This standard is a harmo

5、nized specification within the CECC system. Terminology and conventions. The text of the CECC specification has been approved as suitable for publication as a British Standard without deviation. Some terminology and certain conventions are not identical with those used in British Standards; attentio

6、n is drawn especially to the following. The comma has been used as a decimal marker. In British Standards it is current practice to use a full point on the baseline as the decimal marker. Cross-references. The British Standard which implements CECC00100 is BS9000: “General requirements for a system

7、for electronic components of assessed quality” Part 2:1983 “Specification for national implementation of CECC basic rules and rules of procedure”. The Technical Committee has reviewed the provisions of IEC747, to which reference is made in the text, and has decided that they are acceptable for use i

8、n conjunction with this standard. Scope. This standard lists the ratings, characteristics and inspection requirements which shall be included as mandatory requirements in accordance with BS CECC90100 in any detail specification for these devices. Detail specification layout. The front page layout of

9、 detail specifications released to BS CECC family or blank detail specifications will be in accordance with BS9000 Circular Letter No.15. A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standards are responsible for their correct applicatio

10、n. Compliance with a British Standard does not of itself confer immunity from legal obligations. International Standards a Corresponding British Standards IEC 68-2-30:1980 BS 2011 Basic environmental testing procedures Part2.1Db:1981 Test Db and guidance. Damp heat cyclic(12+12 hour cycle) (Identica

11、l) IEC 617-12:1983 BS 3939 Guide for graphical symbols for electrical power, telecommunications and electronics diagrams Part12:1985 Binary logic elements (Identical) CECC 90000:1985 BS CECC90000:1985 Harmonized system of quality assessment for electronic components. Generic specification: monolithi

12、c integrated circuits (Identical) CECC 90100:1986 BS CECC90100:1986 Harmonized system of quality assessment for electronic components. Sectional specification: digital monolithic integrated circuits (Identical) a Undated in text. Summary of pages This document comprises a front cover, an inside fron

13、t cover, pagesi andii, theCECC title page, page ii, pages1 to11 and a back cover. This standard has been updated (see copyright date) and may have had amendments incorporated. This will be indicated in the amendment table on the inside front cover.BSCECC90111:1987 ii BSI 10-1999 Foreword The CENELEC

14、 Electronic Components Committee (CECC) is composed of those member countries of the European Committee for Electrotechnical Standardization (CENELEC) who wish to take part in a harmonized System for electronic components of assessed quality. The object of the System is to facilitate international t

15、rade by the harmonization of the specifications and quality assessment procedures for electronic components, and by the grant of an internationally recognized Mark, or Certificate, of Conformity. The components produced under the System are thereby accepted by all member countries without further te

16、sting. This specification has been formally approved by the CECC, and has been prepared for those countries taking part in the System who wish to issue national harmonized specifications for MOS READ/WRITE STATIC MEMORIES SILICON MONOLITHIC CIRCUITS. It should be read in conjunction with the current

17、 regulations for the CECC System. At the date of printing of this specification the member countries of the CECC are Austria, Belgium, Denmark, Finland, France, Germany, Ireland, Italy, the Netherlands, Norway, Portugal, Spain, Sweden, Switzerland, and the UnitedKingdom. Preface This blank detail sp

18、ecification (BDS) was prepared by CECC WG9 “Integrated circuits”. It is based, wherever possible, on the Publications of the International Electrotechnical Commission and in particular on IEC747: Semiconductor devices Discrete devices and integrated circuits. The text of this BDS was circulated to t

19、he CECC for voting in the documents indicated below and was ratified by the President of the CECC for printing as a CECC specification. It is recognized that the layout proposed cannot be applied to all detail specifications based on this document. For instance, it may be preferable to indicate the

20、limiting values in the form of a table when several similar devices appear in the same detail specification. In accordance with the decision of the CECC Management Committee this specification is published initially in English and French. The German text will follow as soon as it has been prepared.

21、Documents Date of Voting Report on the Voting CECC (Secretariat) 1337 March 1983 CECC (Secretariat) 1492 CECC (Secretariat) 1604 August 1984 CECC (Secretariat) 1723BSCECC90111:1987 BSI 10-1999 1 General The following information is given for guidance. Scope This BDS relates to MOS Read/Write Static

22、Memories in accordance with IEC747:Semiconductor devices Discrete devices and integrated circuits. Related documents See 2.1 of CECC90100 and 2.2 of CECC90000 Structure of Detail Specifications Clause numbering of DS shall be in accordance with that of this document. Units, symbols and terminology S

23、ee 2.3 of CECC90100 and 2.3 of CECC90000 Application of Quality Assessment Procedures See 3 of CECC90100 and CECC90000.BSCECC90111:1987 2 BSI 10-1999 Layout for front page of detail specification Front pageBSCECC90111:1987 BSI 10-1999 3 The front page of the DS shall be laid out as shown on the prev

24、ious page. The numbers between square brackets correspond to the following indications which shall be given: Identification of the DS and of the component: 1 The name of the National Standards Organization under whose authority the DS is published and, if applicable, the organization from whom the D

25、S is available. 2 The CECC Symbol and the CECC number allotted to the DS by the CECC General Secretariat. 3 The number and issue number of the CECC generic or sectional specification as relevant; also national reference if different. 4 If different from the CECC number, the national number of the DS

26、, date of issue and any further information required by the national system, together with any amendment numbers. 5 Type number, a short description of the type by: function performance, for example variants based on speed, temperature, power etc. 6 Information on typical construction material and t

27、ype of construction (silicon, monolithic, bipolar, MOS) For 5 and 6 the text to be given in the DS should be suitable for an entry in CECC00200 (QPL) and CECC00300 (Library List). 7 An outline drawing with main dimensions which are of importance for interchangeability, and/or reference to the approp

28、riate national or international document for outlines. Alternatively, this drawing may be given in an annex to the DS. 8 Quality assessment level(s) 9 Reference data giving information on the most important properties of the component, which allow comparison between the various component types inten

29、ded for the same, or for similar, application. The DS shall give a brief description including the following: Technology (N MOS, H MOS . . .) Structure (words x bits) The type of output circuit (for example: open collector, three state . . . ) Essential functions Identification of the component and

30、supplementary information: Description of the materials for the package (for example, glass, ceramic, metal, plastic) and information relating to the mounting (welding, soldering), lead material and finish. Inside the sketch of the package, the terminal connections to the inputs, outputs or other im

31、portant points of the circuit shall be identified. This can be shown by a functional block diagram. Description of the numbering of the terminals with the identification of pin number1. Marking on the device in accordance with the GS (see 2.5 of CECC90000). 2 Operating characteristics The following

32、characteristics shall apply over the full operating temperature range and the supply voltage range unless otherwise specified. 2.1 General description The following characteristics shall be given if they are not adequately defined in clause 1: Nominal voltage supply level. Nominal current consumptio

33、n. Operating modes. Electrical compatibility (if appropriate): it shall be stated whether the integrated circuit memory is electrically compatible with other particular integrated circuits or families of integrated circuits, or whether special interfaces are required.BSCECC90111:1987 4 BSI 10-1999 B

34、lock diagram: the block diagram shall be sufficiently detailed to enable the individual functional units within the memory to be identified with their main input and output paths and the identification of their external connections (chip enable, address decode . . .). The function(s) performed by ea

35、ch terminal. The IEC617-12 symbolic representation shall be given if it exists. 2.2 Detailed functional specification This paragraph defines the following characteristics memory size: the total number of bits of information capable of being stored in the memory circuit memory organisation: the numbe

36、r of bits per word capable of being stored in the memory circuit addressing mode (for example multiplexed, latched, etc.) chip select 1) output enable 1) standby mode truth table (this table will show the output states versus the different combinations between the address inputs, select inputs, the

37、read/write inputs, the data inputs) 2.3 Limiting conditions of use (ratings) Limiting conditions (ratings) are not for inspection purposes. Values of limiting conditions of use shall be given as follows: Any cautionary statement unique to an individual integrated circuit shall be included, for examp

38、le the handling of MOS circuits. Any interdependence of limiting conditions shall be specified. If externally connected elements have an influence on the values of the ratings, the ratings shall be prescribed for the integrated circuit with the elements connected for example heatsinks. If transient

39、overloads are permitted, their magnitude and durations shall be specified. All voltages are referenced to a reference terminal (V SS , GND, etc.). 1) The chip select and the output enable shall be distinguished. Characteristics Symbol min. max. Unit Supply voltage V CC , V DD V Input voltages V I V

40、Output voltages V O V Off-state voltage (Note 1) V OZ V Output currents I O mA Input currents I I mA Max. power-dissipation (Note 1) P Dmax. n.a. W Operating temperature T amband/or T case C Storage temperature T stg C NOTE 1Where appropriate.BSCECC90111:1987 BSI 10-1999 5 2.4 Recommended conditions

41、 of use and associated characteristics (In accordance with 5.3.8 ofCECC90100) Not for inspection purposes. The characteristics shall apply over the full operating temperature range, unless otherwise specified. Where the stated performance of the circuit varies over the operating temperature range, t

42、he values of the input and output voltages and their associated currents shall be stated at25 C and at the extremes of the operating temperature range. Values of current and voltage shall be given for each functionally different type of input and/or output. Special characteristics and timing require

43、ments shall be specified. 2.4.1 Recommended conditions of use All voltages are referenced to a reference terminal (V SS , GND, etc. ). 2.4.2 Associated characteristics (if applicable) Characteristics Conditions Symbols min. max. Unit Supply voltage V CC(Note 1) V DD(Note 1) V V Data retention voltag

44、e (Note 2) V DD(DR) V Low level input voltage V IL V High level input voltage V IH V Operating temperature T amband/or T case C NOTE 1Where appropriate these values should also be quoted under standby conditions. NOTE 2Where appropriate.BSCECC90111:1987 6 BSI 10-1999 2.5 Static characteristics All v

45、oltages are referenced to a reference terminal (V SS , GND etc.) Characteristics Conditions (Notes 4, 5) Symbols min. a max. a Unit Maximum supply current(s)for (Note 1) Normal mode V CCmax. I CC I DD Where appropriate mA mA Power down Maximum supply current(s) for data retention mode (Note1) V CCma

46、x. V DD(DR)I DD(DR)mA High level input voltage V CC V IH V Low level input voltage V CC V IL V High level output voltage V CC I OHA V OH V Low level output voltage V CC I OLA V OL V High level input or leakagecurrent V CC V IHB I IH 4A Low level input or leakagecurrent V CC V ILA I IL (1) 4A Low lev

47、el input or leakagecurrent V CC V ILB I IL (2) 4A High level output current V CC V OHB I OH 4A Low level output current V CC V OLA I OL mA High level output current(leakage) (Note 2) V CC V OHA I OHX 4A Low level output current(leakage) (Note 2) V CC V OLB I OLX 4A High level output leakage current

48、at three-state outputs (if applicable) V CC V OHB I OHZ 4A Low level output leakage current at three-state outputs (if applicable) V CC V OLA I OLZ 4A Output short circuit current (Note 3) V CC V O= 0 I OS mA NOTE 1Where appropriate. NOTE 2I OHXand I OLXapply only to circuits having open-collector (

49、or open source/drain) outputs and in this case replace I OHand I OL . NOTE 3Duration to be specified NOTE 4Where appropriate V DDshall be used instead of V CC . NOTE 5The supply voltages shall be specified to ensure the worst case for the relevant characteristic measurement. a algebraic values BSCECC90111:1987 BSI 10-1999 7 The following shall also be stated: where certain terminals may function as inputs or as outputs, then information shall be given for both these conditions 2.6 Dy