BS EN 120003-1986 Specification for harmonized system of quality assessment for electronic components - Blank detail specification - Phototransistors photodarlington transistors ph.pdf

1、BRITISH STANDARD BS EN 120003:1993 Incorporating Amendment No. 1 Specification for Harmonized system ofquality assessment for electronic components Blankdetail specification Phototransistors, photodarlington transistors, phototransistor arrays The European Standard EN 120003:1992 has the status of a

2、 British Standard.BSEN120003:1993 BSI 10-1999 ISBN 0 580 35603 5 Amendments issued since publication Amd. No. Date Comments 8002 October 1993 Indicated by a sideline in the marginBSEN120003:1993 BSI 10-1999 i Contents Page National foreword ii Foreword 2 Foreword ii Text of CECC 120003 1BSEN120003:1

3、993 ii BSI 10-1999 National foreword This British Standard has been prepared under the direction of the Electronic Components Standards Committee. It is identical with CENELEC Electronic Components Committee (CECC)20003:1986 “Harmonized system of quality assessment for electronic components. Blank d

4、etail specification: Phototransistors, photodarlington transistors, phototransistor-arrays”. This standard is a harmonized specification within the CECC system. In 1992 the CENELEC Electronics Components Committee (CECC) accepted CECC20003:1986 as European Standard EN120003:1992. Terminology and con

5、ventions. The text of the CECC specification has been approved as suitable for publication as a British Standard without deviation. Some terminology and certain conventions are not identical with those used in British Standards; attention is drawn especially to the following. The comma has been used

6、 as a decimal marker. In British Standards it is current practice to use a full point on the baseline as the decimal marker. Cross-references. The British Standard which implements CECC00100 is BS9000 “General requirements for electronic components of assessed quality” Part2:1983 “Specification for

7、national implementation of CECC basic rules and rules of procedure”. Scope. This standard lists the ratings, characteristics and inspection requirements which shall be included as mandatory requirements in accordance with BSCECC20000 in any detail specification for these devices. Detail specificatio

8、n layout. The front page layout of detail specifications released to BSCECC family or blank detail specifications will be in accordance with BS9000 Circular Letter No.15. A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standards are respons

9、ible for their correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. International Standard a Corresponding British Standard IEC 191-2:1966 BS 3934:1965 Dimensions of semiconductor devices (Technically equivalent) CECC 20000:1982 BS CECC 2

10、0000:1983 Harmonized system of quality assessment for electronic components. Generic specification. Semiconductor opto-electronic and liquid crystal devices (Identical) CECC 00200 PD 9002 BS 9000, BS CECC and IECQ qualified products list (Technically equivalent for UK approvals only). a Undated in t

11、ext Summary of pages This document comprises a front cover, an inside front cover, pages i and ii, theEN title page, page 2, the CECC title page, page ii, pages1 to 9 andabackcover. This standard has been updated (see copyright date) and may have had amendments incorporated. This will be indicated i

12、n the amendment table on the inside front cover.EUROPEAN STANDARD NORME EUROPENNE EUROPISCHE NORM EN 120003 July 1992 UDC: Supersedes CECC 20003 Issue 1:1986 Descriptors: Quality, electronic components, Phototransistors, photodarlington transistors, phototransistor arrays English version Blank Detai

13、l Specification: Phototransistors, photodarlington transistors, phototransistor arrays Spcification Particulire Cadre: Phototransistors, transistors photodarlington,rseaux de phototransistors Vordruck fr Bauartspezifikation: Phototransistoren, Photo-Darlington-Transistoren, Phototransistorzeilen Thi

14、s European Standard was approved by the CENELEC Electronic Components Committee (CECC) on27 January1992. CENELEC members are bound to comply with CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration

15、. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the General Secretariat of the CECC or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language mad

16、e by translation under the responsibility of a CENELEC member into its own language and notified to the CECC General Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Denmark, Finland, France, Germany, Greece,

17、Iceland, Ireland, Italy, Luxembourg, Netherlands, Norway, Portugal, Spain, Sweden, Switzerland, and UnitedKingdom. The membership of the CECC is identical, with the exception of the national electrotechnical committees of Greece, Iceland and Luxembourg. CECC European Committee for Electrotechnical S

18、tandardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B-1050 Brussels 1992 Copyright reserved to CENELEC members Ref. No. EN 120003:1992 EEN120003:1992 BSI 10-1999 2 Foreword The CENELEC Electronic Com

19、ponents Committee (CECC) is composed of those member countries of the European Committee for Electrotechnical Standardization (CENELEC) who wish to take part in a harmonized System for electronic components of assessed quality. The object of the System is to facilitate international trade by the har

20、monization of the specifications and quality assessment procedures for electronic components, and by the grant of an internationally recognized Mark, or Certificate, of Conformity. The components produced under the System are thereby acceptable in all member countries without further testing. This E

21、uropean Standard was prepared by CECC WG20, “Opto-Electronic Components and Liquid Crystal Devices”. The text of the draft based on document CECC20003 Issue1:1986 was submitted to the formal vote for conversion to a European Standard; together with the voting report, circulated as document CECC(Secr

22、etariat)3000 the following documents were approved by CECC as EN120003 on27January1992: CECC 20003 Issue1:1986 with Amendment1 The following dates were fixed: Contents Page Foreword 2 1 Mechanical description 1 2 Short description 1 3 Level (s) of quality assessment 1 4 Limiting values 1 5 Electrica

23、l and optical characteristics 2 6 Marking 3 7 Ordering information 3 8 Test conditions and inspection requirements 3 9 Additional information 7 Appendix Endurance test conditions 9 latest date of announcement of the EN atnational level (doa) 1992-12-22 latest date of publication ofan identical natio

24、nal standard (dop) 1993-06-22 latest date of declaration ofnational standards obsolescence 1993-06-22 latest date of withdrawal ofconflicting national standards (dow) 2002-12-22EN120003:1992 ii BSI 10-1999 Foreword The CENELEC Electronic Components Committee (CECC) is composed of those member countr

25、ies of the European Committee for Electrotechnical Standardization (CENELEC) who wish to take part in a harmonized System for electronic components of assessed quality. The object of the System is to facilitate international trade by the harmonization of the specifications and quality assessment pro

26、cedures for electronic components, and by the grant of an internationally recognized Mark, or Certificate, of Conformity. The components produced under the System are thereby accepted by all member countries without further testing. This specification has been formally approved by the CECC, and has

27、been prepared for those countries taking part in the System who wish to issue national harmonized specifications for PHOTOTRANSISTORS, PHOTODARLINGTON TRANSISTORS, PHOTOTRANSISTOR ARRAYS. It should be read in conjunction with the current regulations of the CECC System. At the date of printing of thi

28、s document the member countries of the CECC are Austria, Belgium, Denmark, Finland, France, Germany, Ireland, Italy, the Netherlands, Norway, Portugal, Spain, Sweden, Switzerland, and the United-Kingdom. Preface This blank detail specification was prepared by the CECC Working Group20: “SEMICONDUCTOR

29、 OPTOELECTRONIC AND LIQUID CRYSTAL DEVICES”. It is one of a series of blank detail specifications for semiconductor devices, based on the generic specification CECC20000. Voting The text of this blank detail specification was circulated to the CECC for voting in the document indicated below, and was

30、 ratified by the President of the CECC for printing as a CECC Specification. NOTEThis specification is published initially in English and French. The German text will follow as soon as it has been prepared. Document Voting Date Report on the Voting CECC(Secretariat)1452 2 April1984 CECC(Secretariat)

31、1622EN120003:1992 BSI 10-1999 1 PHOTOTRANSISTORS, PHOTODARLINGTON TRANSISTORS, PHOTOTRANSISTOR ARRAYS Name (address) of responsible ONH (and possibly of body from which specification is available) e Page of CECC20003-XXX CECC detail specification number plus issue number and/or date f ELECTRONIC COM

32、PONENT OF ASSESSED QUALITY IN ACCORDANCE WITH: CECC20000, issue . . . and national references if different g National number of detail specification This box may not be used if national number includes CECC number h 1 Mechanical description k Detail Specification For: i Either outline references (co

33、de A) or base and case references (codes B + C): Type number (s) of relevant device (s) and, if appropriate, structurally similar devices from IEC191-2: national if desired ORDERING INFORMATION: see clause7 of this specification OUTLINE DRAWING AND CONNECTIONS (Terminal connected to case, if any) 2

34、Short description j PHOTOTRANSISTORS/PHOTODARLINGTON/. The outline drawing may correspond to the device itself and/or the device with its mounting clip Semiconductor material: Si/. Encapsulation: metal/glass/plastic/. Application: Signal and switching application may be transferred to, or given with

35、 more details, in clause9 of this specification MARKING: letters and figures/colour code see2.5 of CECC20000 and/or clause6 of this specification Power: ambient-rated (T amb ) Some important quick reference data may be added Polarity indication if special method is used 3 Level (s) of quality assess

36、ment if relevant l 4 Limiting values (Absolute maximum rating system) m These apply per transistor over the operating temperature range unless otherwise stated. X denotes that a value shall be inserted in the detail specification Clause CECC 20003 Repeat only clause numbers used, with text. Addition

37、al values, if any, shall be given at the appropriate place without clause number(s). Curves should preferably be given in clause9 of this specification Symbol Value min. max. Unit 4.1 Operating ambient temperatures T amb X X C 4.2 Storage temperatures T stg X X C 4.3 Soldering temperature Soldering

38、time and minimum distance to case shall be given Recommended mounting conditions (temperature, duration. . .) may be given in clause9.1 of this specification. T sld X C 4.4 Collector emitter voltage, direct voltage with I B=0 V CE0 X V 4.5 Where the base connection is present, collector base voltage

39、, direct voltage with I E=0 V CB0 X V 4.6.1 Where the base connection is present, emitter base voltage, direct voltage with I C=0 or V EBO X V 4.6.2 Emitter collector voltage (where no base connection is present) V ECO X V 4.7 Collector current at25 C I C X mA 4.8 Total power dissipation at ambient

40、temperature of25 C with derating curve if necessary (see9.2) P (tot) X W Information about manufacturers who have components qualified to this detail specification is available in the current CECC00200: Qualified Products List.EN120003:1992 2 BSI 10-1999 5 Electrical and optical characteristics See

41、clause8 of this specification for inspection requirements (Groups A and C) Signs between brackets correspond to characteristics given as “where appropriate” or as alternatives: Those characteristics marked “where appropriate” in this clause and in the inspection section shall either be omitted or, i

42、f specified, shall then be measured. For equivalent characteristics given as alternatives, the choice should preferably be left open to allow the use of the same detail specification by different manufacturers or countries. Repeat only clause numbers used, with text. Any additional characteristics t

43、o be given at appropriate place but without clause number. When several devices are defined in the same detail specification, the relevant values should be given on successive lines, where possible avoiding repetition of identical values. Clause CECC 20003 Measured Characteristics and conditions, at

44、 T amb=25 C and I B=0 unless otherwise stated Symbol Value min. max. Unit 5.1 A2b Collector current under irradiation at specified V CEandE eor E v(see note4). I C (H)(1) I C (e)(1) X mA 5.2 C2a Where appropriate: collector current under irradiation at specified V CEand E eor E v(see note4). I C (H)

45、(2) I C (e)(2) X mA 5.3 C2a Where appropriate: collector current under irradiation at specified V CEand low value of E eor E v(see note4). I C (H)(3) I C (e)(3) X mA 5.4 A2b Collector emitter saturation voltage at specified I Cand E vor E e(see note4) preferably under the same conditions of measurem

46、ents as for5.1. V CE (sat) X V 5.5 A2b Collector emitter dark current at specified V CEand irradiance E e =0. I CEO (1) X 4A 5.6 A4 Collector emitter dark current at specified V CE , irradiance E e=0 and specified T amb . I CEO (2) X 4A 5.7 A3 Emitter collector dark current (where no base connection

47、 is present) at V ECspecified, E e =0. I ECO X 4A 5.8 A3 Emitter base dark current (where base connection is present) at V EBspecified, E e=0. I EBO X 4A 5.9 C2a Rise time under specified supply voltage V, I Cpeak, R 2(if other than100 7), t w , $, 2 p , %2. t r X 4s 5.10 C2a Fall time under specifi

48、ed conditions (same as for5.9). t f X 4s 5.11 Responsivity diagram at specified V CEand 8 eor 8 v(seenote4) (see9.3). 5.12 Collector current under irradiation versus illuminance E v(see note4) or irradiance E eexpressed as a curve at specified V CE(see9.4). 5.13 Relative responsivity.expressed as a

49、curve at specified V CEand 8 e(see9.5). 5.14 A2b For arrays only, matching factor at specified V CEand E eor E v(see note4). m X Notes on page7 m I C H () highest () I C H () lowest () - or I C e () highest () I C e () lowest () - =EN120003:1992 BSI 10-1999 3 6 Marking Information actually marked on the device and on the primary pack Any particular information other than given in box k on front cover and/or2.5 of C