BS EN 60749-18-2003 Semiconductor devices - Mechanical and climatic test methods - Ionizing radiation (total dose)《半导体器件 机械和气候试验方法 电离辐射(总剂量)》.pdf

1、BRITISH STANDARD BS EN 60749-18:2003 Incorporating Corrigenda Nos. 1 and 2 Semiconductor devices Mechanical and climatic test methods Part 18: Ionizing radiation (total dose) The European Standard EN 60749-18:2003 has the status of a British Standard ICS 31.080.01 BS EN 60749-18:2003 This British St

2、andard was published under the authority of the Standards Policy and Strategy Committee on 13 March 2003 BSI 29 June 2004 ISBN 0 580 41385 3 National foreword This British Standard is the official English language version of EN 60749-18:2003. It is identical with IEC 60749-18:2002. The UK participat

3、ion in its preparation was entrusted to Technical Committee EPL/47, Semiconductors, which has the responsibility to: A list of organizations represented on this committee can be obtained on request to its secretary. Cross-references The British Standards which implement international or European pub

4、lications referred to in this document may be found in the BSI Catalogue under the section entitled “International Standards Correspondence Index”, or by using the “Search” facility of the BSI Electronic Catalogue or of British Standards Online. This publication does not purport to include all the n

5、ecessary provisions of a contract. Users are responsible for its correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. aid enquirers to understand the text; present to the responsible international/European committee any enquiries on the i

6、nterpretation, or proposals for change, and keep the UK interests informed; monitor related international and European developments and promulgate them in the UK. Summary of pages This document comprises a front cover, an inside front cover, the EN title page, pages 2 to 14, an inside back cover and

7、 a back cover. The BSI copyright date displayed in this document indicates when the document was last issued. Amendments issued since publication Amd. No. Date Comments 14531 Corrigendum No. 1 7 July 2003 Correction of supersession details in national foreword. 15225 Corrigendum No. 2 29 June 2004 C

8、hanges to first paragraph in the national foreword BS EN 0694781-:0023 ThrB sihsiti natSradd wsa upsilbheu dnedr hte uahtroyti fo htS etandasdr oPilcy nad Stragety Commno eetti 31 Mrach 3002 ISB uJ 92ne 2400 ISBN 0 085 83143 5 itaNanol owerofdr hTis BritisS htaadni drs htffo eiical Egnlisl hagnauge

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12、tx; persetn to the serpsnoitni elbetanreporuE/lanoian ocmmtiteyna e qneuiries on thi enetterpraitno, orp ropsolaof sr ahcnge, ank dpee the UK nietretsi snformed; monotir ertaled nitenratoinaa lnd uEporena deveolpmnets and prmoluaget htem ni thU eK. Summary of pages This document comprises tnorf a ev

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14、 noi susrepsesied notasli ni antierof lano.drow 25152 oCrrigendu.oN m 2 92 uJne 2400 Changes ot fitsr pgararpah in hte antilano erofdrowEUROPEAN STANDARD EN 60749-18 NORME EUROPENNE EUROPISCHE NORM February 2003 CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normali

15、sation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B - 1050 Brussels 2003 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 60749-18:2003 E ICS 31.080.01 English version

16、 Semiconductor devices Mechanical and climatic test methods Part 18: Ionizing radiation (total dose) (IEC 60749-18:2002) Dispositifs semiconducteurs Mthodes dessais mcaniques et climatiques Partie 18: Rayonnements ionisants (dose totale) (CEI 60749-18:2002) Halbleiterbauelemente Mechanische und klim

17、atische Prfverfahren Teil 18: Ionisierende Strahlung (Gesamtdosis) (IEC 60749-18:2002) This European Standard was approved by CENELEC on 2003-02-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the stat

18、us of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (English, French, German).

19、 A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republ

20、ic, Denmark, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Luxembourg, Malta, Netherlands, Norway, Portugal, Slovakia, Spain, Sweden, Switzerland and United Kingdom.Foreword The text of document 47/1657/FDIS, future edition 1 of IEC 60749-18, prepared by IEC TC 47, Semiconducto

21、r devices, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 60749-18 on 2003-02-01. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2003-11-01

22、latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2006-02-01 _ Endorsement notice The text of the International Standard IEC60749-18:2002 was approved by CENELEC as a European Standard without any modification. _ Page2 EN6074918:2003067-9418 CEI:0220 3 CO

23、NTENTS 1 Scope.4 2 Terms and definitions .4 3 Test apparatus .5 3.1 Radiation source .5 3.2 Dosimetry system5 3.3 Electrical test instruments .5 3.4 Test circuit board(s) 5 3.5 Cabling6 3.6 Interconnect or switching system.6 3.7 Environmental chamber.6 4 Procedure.6 4.1 Sample selection and handling

24、6 4.2 Burn-in 7 4.3 Dosimetry measurements 7 4.4 Lead/aluminium (Pb/Al) container7 4.5 Radiation level(s) 7 4.6 Radiation dose rate .8 4.6.1 Condition A8 4.6.2 Condition B8 4.6.3 Condition C .8 4.7 Temperature requirements 8 4.8 Electrical performance measurements.8 4.9 Test conditions9 4.9.1 In-flu

25、x testing.9 4.9.2 Remote testing 9 4.9.3 Bias and loading conditions .9 4.10 Post-irradiation procedure .9 4.11 Extended room temperature anneal test 10 4.11.1 Need to perform an extended room temperature anneal test10 4.11.2 Extended room temperature anneal test procedure10 4.12 MOS accelerated ann

26、ealing test11 4.12.1 Need to perform accelerated annealing test.11 4.12.2 Accelerated annealing test procedure12 4.13 Test report 12 5 Summary13 Page3 EN6074918:2003067-9418 CEI:0220 4 SEMICONDUCTOR DEVICES MECHANICAL AND CLIMATIC TEST METHODS Part 18: Ionizing radiation (total dose) 1 Scope This pa

27、rt of IEC 60749 provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 ( 60 Co) gamma ray source. This standard provides an accelerated annealing test f

28、or estimating low dose rate ionizing radiation effects on devices. This annealing test is important for low dose rate or certain other applications in which devices may exhibit significant time-dependent effects. This standard addresses only steady-state irradiations, and is not applicable to pulse

29、type irradiations. It is intended for military- and space-related applications. This standard may produce severe degradation of the electrical properties of irradiated devices and thus should be considered a destructive test. 2 Terms and definitions For the purposes of this part of IEC 60749, the fo

30、llowing terms and definitions apply. 2.1 ionizing radiation effects changes in the electrical parameters of a device or integrated circuit resulting from radiation- induced charge NOTE These are also referred to as total dose effects. 2.2 in-flux test electrical measurements made on devices during i

31、rradiation exposure 2.3 non in-flux test electrical measurements made on devices at any time other than during irradiation 2.4 remote tests electrical measurements made on devices that are physically removed from the radiation location Page4 EN6074918:2003067-9418 CEI:0220 5 2.5 time-dependent effec

32、ts significant degradation in electrical parameters caused by the growth or annealing or both of radiation-induced trapped charge after irradiation NOTE Similar effects also take place during irradiation. 2.6 accelerated annealing test procedure utilizing elevated temperature to accelerate time-depe

33、ndent effects 3 Test apparatus The apparatus shall consist of the radiation source, electrical test instrumentation, test circuit board(s), cabling, interconnect board or switching system, an appropriate dosimetry measurement system, and an environmental chamber (if required for time-dependent effec

34、ts measurements). Adequate precautions shall be observed to obtain an electrical measurement system with sufficient insulation, ample shielding, satisfactory grounding, and suitable low noise characteristics. 3.1 Radiation source The radiation source used in the test shall be the uniform field of a

35、60 Co gamma ray source. Uniformity of the radiation field in the volume where devices are irradiated shall be within 10 % as measured by the dosimetry system, unless otherwise specified. The intensity of the gamma ray field of the 60 Co source shall be known with an uncertainty of no more than 5 %.

36、Field uniformity and intensity can be affected by changes in the location of the device with respect to the radiation source and the presence of radiation absorption and scattering materials. 3.2 Dosimetry system An appropriate dosimetry system shall be provided that is capable of carrying out the m

37、easurements called for in 4.2. 3.3 Electrical test instruments All instrumentation used for electrical measurements shall have the stability, accuracy, and resolution required for accurate measurement of the electrical parameters. Any instrument- ation required to operate in a radiation environment

38、shall be appropriately shielded. 3.4 Test circuit board(s) Devices to be irradiated shall either be mounted on or connected to circuit boards together with any associated circuitry necessary for device biasing during irradiation or for in situ measurements. Unless otherwise specified, all device inp

39、ut terminals and any others which may affect the radiation response shall be electrically connected during irradiation, i.e. not left floating. The geometry and materials of the completed board shall allow uniform irradiation of the devices under test. Good design and construction practices shall be

40、 used to prevent oscillations, minimize leakage currents, prevent electrical damage and obtain accurate measurements. Only sockets that are radiation resistant and do not exhibit significant leakages (relative to the devices under test) shall be used to mount devices and associated circuitry to the

41、test board(s). Page5 EN6074918:2003067-9418 CEI:0220 6 All apparatus used repeatedly in radiation fields shall be checked periodically for physical or electrical degradation. Components which are placed on the test circuit board, other than devices under test, shall be insensitive to the accumulated

42、 radiation or they shall be shielded from the radiation. Test fixtures shall be made such that materials will not perturb the uniformity of the radiation field intensity on the devices under test. Leakage current shall be measured outside the field of radiation. With no devices installed in the sock

43、ets, the test circuit board shall be connected to the test system such that all expected sources of noise and interference are operative. With the maximum specified bias for the test device applied, the leakage current between any two terminals shall not exceed 10 % of the lowest current limit value

44、 in the pre-irradiation device specification. Test circuit boards used to bias devices during accelerated annealing must be capable of withstanding the temperature requirements of the accelerated annealing test and shall be checked before and after testing for physical and electrical degradation. 3.

45、5 Cabling Cables connecting the test circuit boards in the radiation field to the test instrumentation shall be as short as possible. If long cables are necessary, line drivers may be required. The cables shall have low capacitance and low leakage to ground, and low leakage between wires. 3.6 Interc

46、onnect or switching system This system shall be located external to the radiation environment location, and provides the interface between the test instrumentation and the devices under test. It is part of the entire test system and subject to the limitation specified in 3.4 for leakage between term

47、inals. 3.7 Environmental chamber The environmental chamber for time-dependent effects testing, if required, shall be capable of maintaining the selected accelerated annealing temperature within 5 C. 4 Procedure The test devices shall be irradiated and subjected to accelerated annealing testing (if r

48、equired for time-dependent effects testing) as specified by a test plan. This plan shall specify the device description, irradiation conditions, device bias conditions, dosimetry system, operating conditions, measurement parameters and conditions and accelerated annealing test con- ditions (if requi

49、red). 4.1 Sample selection and handling Only devices that have passed the electrical specifications as defined in the test plan shall be submitted to radiation testing. Unless otherwise specified, the test samples shall be randomly selected from the parent population and identically packaged. Each part shall be individually identifiable to enable pre- and post-irradiation comparison. For device types that are ESD- sensit