ImageVerifierCode 换一换
格式:PDF , 页数:18 ,大小:1.07MB ,
资源ID:578080      下载积分:10000 积分
快捷下载
登录下载
邮箱/手机:
温馨提示:
如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
如填写123,账号就是123,密码也是123。
特别说明:
请自助下载,系统不会自动发送文件的哦; 如果您已付费,想二次下载,请登录后访问:我的下载记录
支付方式: 支付宝扫码支付 微信扫码支付   
注意:如需开发票,请勿充值!
验证码:   换一换

加入VIP,免费下载
 

温馨提示:由于个人手机设置不同,如果发现不能下载,请复制以下地址【http://www.mydoc123.com/d-578080.html】到电脑端继续下载(重复下载不扣费)。

已注册用户请登录:
账号:
密码:
验证码:   换一换
  忘记密码?
三方登录: 微信登录  

下载须知

1: 本站所有资源如无特殊说明,都需要本地电脑安装OFFICE2007和PDF阅读器。
2: 试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。
3: 文件的所有权益归上传用户所有。
4. 未经权益所有人同意不得将文件中的内容挪作商业或盈利用途。
5. 本站仅提供交流平台,并不能对任何下载内容负责。
6. 下载文件中如有侵权或不适当内容,请与我们联系,我们立即纠正。
7. 本站不保证下载资源的准确性、安全性和完整性, 同时也不承担用户因使用这些下载资源对自己和他人造成任何形式的伤害或损失。

版权提示 | 免责声明

本文(BS EN 62047-10-2011 Semiconductor devices Micro-electromechanical devices Micro-pillar compression test for MEMS materials《半导体装置 微电子机械装置 MEMS材料的微型柱压缩试验》.pdf)为本站会员(arrownail386)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

BS EN 62047-10-2011 Semiconductor devices Micro-electromechanical devices Micro-pillar compression test for MEMS materials《半导体装置 微电子机械装置 MEMS材料的微型柱压缩试验》.pdf

1、raising standards worldwideNO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAWBSI Standards PublicationBS EN 62047-10:2011Semiconductor devices Micro-electromechanicaldevicesPart 10: Micro-pillar compression test forMEMS materialsBS EN 62047-10:2011 BRITISH STANDARDNational forewo

2、rdThis British Standard is the UK implementation of EN 62047-10:2011.The UK participation in its preparation was entrusted to TechnicalCommittee EPL/47, Semiconductors.A list of organizations represented on this committee can beobtained on request to its secretary.This publication does not purport t

3、o include all the necessaryprovisions of a contract. Users are responsible for its correctapplication. BSI 2011ISBN 978 0 580 69447 9ICS 31.080.99Compliance with a British Standard cannot confer immunity fromlegal obligations.This British Standard was published under the authority of theStandards Po

4、licy and Strategy Committee on 30 September 2011.Amendments issued since publicationDate Text affectedBS EN 62047-10:2011EUROPEAN STANDARD EN 62047-10 NORME EUROPENNE EUROPISCHE NORM September 2011 CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electro

5、technique Europisches Komitee fr Elektrotechnische Normung Management Centre: Avenue Marnix 17, B - 1000 Brussels 2011 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 62047-10:2011 E ICS 31.080.99 English version Semiconductor dev

6、ices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (IEC 62047-10:2011) Dispositifs semiconducteur - Dispositifs microlectromcaniques - Partie 10: Essai de compression utilisant la technique des micro-piliers pour les matriaux des MEMS (CEI 62047-10:201

7、1) Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 10: Druckprfverfahren an zylinderfrmigen Mikroproben fr Werkstoffe der Mikrosystemtechnik (IEC 62047-10:2011) This European Standard was approved by CENELEC on 2011-08-30. CENELEC members are bound to comply with the CEN/CENELEC In

8、ternal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC

9、 member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CE

10、NELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romani

11、a, Slovakia, Slovenia, Spain, Sweden, Switzerland and the United Kingdom. BS EN 62047-10:2011EN 62047-10:2011 - 2 - Foreword The text of document 47F/85/FDIS, future edition 1 of IEC 62047-10, prepared by SC 47F, Micro-electromechanical systems, of IEC TC 47, Semiconductor devices, was submitted to

12、the IEC-CENELEC parallel vote and approved by CENELEC as EN 62047-10:2011. The following dates are fixed: latest date by which the document has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2012-05-30 latest date by which the national st

13、andards conflicting with the document have to be withdrawn (dow) 2014-08-30 Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC and/or CEN shall not be held responsible for identifying any or all such patent rights. _ Endorsem

14、ent notice The text of the International Standard IEC 62047-10:2011 was approved by CENELEC as a European Standard without any modification. _ BS EN 62047-10:2011- 3 - EN 62047-10:2011 Annex ZA (normative) Normative references to international publications with their corresponding European publicati

15、ons The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. NOTE When an international publication has be

16、en modified by common modifications, indicated by (mod), the relevant EN/HD applies. Publication Year Title EN/HD Year IEC 62047-8 - Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test method for tensile property measurement of thin films EN 62047-8 - 2 62047-10 IEC:

17、2011 CONTENTS FOREWORD . 3 1 Scope . 5 2 Normative references . 5 3 Symbols and designations 5 4 Test piece 6 4.1 General . 6 4.2 Shape of test piece . 6 4.3 Measurement of dimensions 6 5 Testing method and test apparatus . 7 5.1 Test principle 7 5.2 Test machine . 7 5.3 Test procedure 8 5.4 Test en

18、vironment. 8 6 Test report 8 Annex A (informative) Error estimation using finite element method . 10 Bibliography 11 Figure 1 Shape of cylindrical pillar (See Table 1 for symbols) 5 Figure 2 Schematic of Micro-pillar compression test 7 Figure A.1 Error estimation with the aspect ratio and friction c

19、oefficient in the elastic modulus measurement 10 Table 1 Symbols and designations of test piece . 6 62047-10 IEC:2011 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 10: Micro-pillar compression test for MEMS materials FOREWORD 1) The Internat

20、ional Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electron

21、ic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees;

22、any IEC National Committee interested in the subject dealt with may participate in this preparatory work. International, governmental and non-governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standa

23、rdization (ISO) in accordance with conditions determined by agreement between the two organizations. 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international consensus of opinion on the relevant subjects since each technical committee has rep

24、resentation from all interested IEC National Committees. 3) IEC Publications have the form of recommendations for international use and are accepted by IEC National Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, I

25、EC cannot be held responsible for the way in which they are used or for any misinterpretation by any end user. 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications transparently to the maximum extent possible in their national and regional publ

26、ications. Any divergence between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter. 5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity assessment services and, in some are

27、as, access to IEC marks of conformity. IEC is not responsible for any services carried out by independent certification bodies. 6) All users should ensure that they have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents includ

28、ing individual experts and members of its technical committees and IEC National Committees for any personal injury, property damage or other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or relian

29、ce upon, this IEC Publication or any other IEC Publications. 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the ele

30、ments of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 62047-10 has been prepared by subcommittee 47F: Micro-electromechanical systems, of IEC technical committee 47: Semiconductor

31、 devices. The text of this standard is based on the following documents: FDIS Report on voting 47F/85/FDIS 47F/94/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance wi

32、th the ISO/IEC Directives, Part 2. A list of all parts of IEC 62047, under the general title Semiconductor devices Micro-electromechanical devices, can be found on the IEC website. 4 62047-10 IEC:2011 The committee has decided that the contents of this publication will remain unchanged until the sta

33、bility date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. IMPORTANT The “colour inside” logo on the cover page of this publication i

34、ndicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore print this publication using a colour printer. 62047-10 IEC:2011 5 SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 10: Micro-pillar compression test fo

35、r MEMS materials 1 Scope This part of IEC 62047 specifies micro-pillar compression test method to measure compressive properties of MEMS materials with high accuracy, repeatability, and moderate effort of specimen fabrication. The uniaxial compressive stress-strain relationship of a specimen is meas

36、ured, and the compressive modulus of elasticity and yield strength can be obtained. The test piece is a cylindrical pillar fabricated on a rigid (or highly stiff) substrate by micro-machining technologies, and its aspect ratio (ratio of pillar diameter to pillar height) should be more than 3. This s

37、tandard is applicable to metallic, ceramic, and polymeric materials. 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced do

38、cument (including any amendments) applies. IEC 62047-8, Semiconductor devices Micro-electromechanical devices Part 8: Strip bending test method for tensile property measurement of thin films 3 Symbols and designations For the purposes of this document, the shape of test piece and symbols are given i

39、n Figure 1 and Table 1, respectively. Test piece in this standard is often referred to as a pillar specimen. Cylindrical pillar Substrate D H IEC 1708/11 Key Components Dimensions of cylindrical pillar cylindrical pillar: a part of micro-pillars fabricated on a substrate using micro-machining proces

40、s shaped in a cylinder as a test piece D: diameter of a test piece substrate: a kind of rigid (or highly stiff) material supporting the test piece H: height of a test piece Figure 1 Shape of cylindrical pillar (See Table 1 for symbols) 6 62047-10 IEC:2011 Table 1 Symbols and designations of test pie

41、ce Symbol Unit Designation H m height of a test piece D m diameter of a test piece 4 Test piece 4.1 General The test piece shall be prepared by using the same fabrication process as the actual device fabrication. To minimize the size effect of a test piece, the structure and size of the test piece s

42、hould be similar to those of the device components. There are many fabrication methods of the test piece depending on the applications. 4.2 Shape of test piece This standard specifies the compressive properties of a cylindrical micro-pillar. The micro-pillars are fabricated on a substrate using micr

43、o-machining process. The shape and the verticality of the pillars should be checked using electron or optical microscopy. The boundary condition on the bottom surface of the pillar is usually regarded as the fixed boundary, and these boundary conditions are different from those of bulk scale pillars

44、 where the top and bottom surfaces are usually lubricated and regarded as the frictionless boundary. Since it is also difficult to directly measure the compressive strain of the micro-pillar during the test, the strain is estimated from the displacement of the rigid punch using the Equation (2) of 5

45、.1. This leads to errors in strain, and consequently errors in elastic modulus and yield strength as described in Annex A. The accuracy of this method depends on the friction coefficient between the punch and the top surface, and the aspect ratio of the micro-pillar. The pillar with high aspect rati

46、o is desirable for reducing the errors in strain estimation unless the buckling occurs. The upper limit of aspect ratio is dependent on boundary conditions and material properties of the pillar. The maximum aspect ratio is suggested as 10 41. When there is no buckling after test for a pillar with an

47、 aspect ratio larger than 10, the test data should be considered as a valid one. The friction coefficient on the top surface can be reduced by applying a lubricating layer for bulk pillars (see 4), but it is very difficult to apply the lubricating layer to micro-pillars. The maximum variation in dia

48、meter of a cross-section of a pillar should be less than 1 % of the nominal diameter. When this is not the case, the actual cross-sectional area should be measured. 4.3 Measurement of dimensions To analyze the test results, the accurate measurement of the test piece dimensions is required since the

49、dimensions are used to extract mechanical properties of test materials. The diameter and the height of the pillar should be measured with high accuracy with less than 1 % error. Interferometric technique or FIB (Focused Ion Beam) sectioning can be utilized to measure the height accurately. The test piece can have a changing cross-section in the longitudinal direction and the diameter or the top surface can be different from that of the bottom surface. This dimens

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1