BS EN 62047-16-2015 Semiconductor devices Micro-electromechanical devices Test methods for determining residual stresses of MEMS films Wafer curvature and cantilever beam deflectio.pdf

1、BSI Standards PublicationSemiconductor devices Micro-electromechanical devicesPart 16: Test methods for determining residual stresses of MEMS films Wafer curvature and cantilever beam deflection methodsBS EN 62047-16:2015National forewordThis British Standard is the UK implementation of EN 62047-16:

2、2015. It isidentical to IEC 62047-16:2015.The UK participation in its preparation was entrusted to TechnicalCommittee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained onrequest to its secretary.This publication does not purport to include all the necessary

3、 provisions ofa contract. Users are responsible for its correct application. The British Standards Institution 2015.Published by BSI Standards Limited 2015ISBN 978 0 580 78080 6ICS 31.080.99Compliance with a British Standard cannot confer immunity fromlegal obligations.This British Standard was publ

4、ished under the authority of theStandards Policy and Strategy Committee on 31 July 2015.Amendments/corrigenda issued since publicationDate Text affectedBRITISH STANDARDBS EN 62047-16:2015EUROPEAN STANDARDNORME EUROPENNEEUROPISCHE NORMEN 62047-16 July 2015 ICS 31.080.99 English Version Semiconductor

5、devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMSfilms - Wafer curvature and cantilever beam deflection methods (IEC 62047-16:2015) Dispositifs semiconducteurs - Dispositifsmicrolectromcaniques - Partie 16: Mthodes dessai pour dterminer les c

6、ontraintes rsiduelles des films de MEMS -Mthodes de la courbure de la plaquette et de dviation de poutre en porte-faux (IEC 62047-16:2015) Halbleiterbauelemente - Bauelemente derMikrosystemtechnik - Teil 16: Messverfahren zur Ermittlung der Eigenspannungen in Dnnschichten von MEMS-Bauteilen - Substr

7、atkrmmungs- und Biegebalken-Verfahren (IEC 62047-16:2015) This European Standard was approved by CENELEC on 2015-04-09. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard wit

8、hout any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any o

9、ther language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cy

10、prus, the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and

11、the United Kingdom. European Committee for Electrotechnical Standardization Comit Europen de Normalisation ElectrotechniqueEuropisches Komitee fr Elektrotechnische Normung CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels 2015 CENELEC All rights of exploitation in any form and by any

12、means reserved worldwide for CENELEC Members. Ref. No. EN 62047-16:2015 E EN 62047-16:2015 2 European foreword The text of document 47F/209/FDIS, future edition 1 of IEC 62047-16, prepared by SC 47F “Microelectromechanical systems” of IEC/TC 47 “Semiconductor devices“ was submitted to the IEC-CENELE

13、C parallel vote and approved by CENELEC as EN 62047-16:2015. The following dates are fixed: latest date by which the document has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2016-01-10 latest date by which the national standards confli

14、cting with the document have to be withdrawn (dow) 2018-04-09 Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC and/or CEN shall not be held responsible for identifying any or all such patent rights. Endorsement notice The t

15、ext of the International Standard IEC 62047-16:2015 was approved by CENELEC as a European Standard without any modification. BS EN 62047-16:2015EN 62047-16:2015 3 Annex ZA (normative) Normative references to international publications with their corresponding European publications The following docu

16、ments, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. NOTE 1 When an Internatio

17、nal Publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies. NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is available here: www.cenelec.eu. Publication Year Title EN/HD Year IEC 62047-21 - Semicondu

18、ctor devices - Micro-electromechanical devices - Part 21: Test method for Poissons ratio of thin film MEMS materials EN 62047-21 - BS EN 62047-16:2015 2 IEC 62047-16:2015 IEC 2015 CONTENTS FOREWORD . 3 1 Scope 5 2 Normative references 5 3 Terms and definitions 5 4 Testing methods 6 4.1 General . 6 4

19、.2 Wafer curvature method 6 4.2.1 General . 6 4.2.2 Test apparatus 7 4.2.3 Measurement procedures 7 4.2.4 Reports 7 4.3 Cantilever beam deflection method . 8 4.3.1 General . 8 4.3.2 Test apparatus 9 4.3.3 Measurement procedures 9 4.3.4 Reports 9 Bibliography 11 Figure 1 Schematic drawing of compress

20、ive residual stress induced curvature after depositing thin film on substrate 6 Figure 2 Scheme for comprehensive residual stress induced curvature 9 Table 1 Mandatory details for the test of wafer curvature method . 8 Table 2 Mandatory details for the report of beam deflection method . 10 BS EN 620

21、47-16:2015IEC 62047-16:2015 IEC 2015 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 16: Test methods for determining residual stresses of MEMS films Wafer curvature and cantilever beam deflection methods FOREWORD 1) The International Electrot

22、echnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To

23、this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC Nation

24、al Committee interested in the subject dealt with may participate in this preparatory work. International, governmental and non-governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO

25、) in accordance with conditions determined by agreement between the two organizations. 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international consensus of opinion on the relevant subjects since each technical committee has representation fr

26、om all interested IEC National Committees. 3) IEC Publications have the form of recommendations for international use and are accepted by IEC National Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, IEC cannot be h

27、eld responsible for the way in which they are used or for any misinterpretation by any end user. 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications transparently to the maximum extent possible in their national and regional publications. Any

28、divergence between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter. 5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity assessment services and, in some areas, access to

29、IEC marks of conformity. IEC is not responsible for any services carried out by independent certification bodies. 6) All users should ensure that they have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual

30、 experts and members of its technical committees and IEC National Committees for any personal injury, property damage or other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this

31、IEC Publication or any other IEC Publications. 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this

32、IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 62047-16 has been prepared by subcommittee 47F: Micro-electromechanical systems, of IEC technical committee 47: Semiconductor devices. The

33、text of this standard is based on the following documents: FDIS Report on voting 47F/209/FDIS 47F/214/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/I

34、EC Directives, Part 2. BS EN 62047-16:2015 4 IEC 62047-16:2015 IEC 2015 A list of all parts in the IEC 62047 series, published under the general title Semiconductor devices Micro-electromechanical devices, can be found on the IEC website. The committee has decided that the contents of this publicati

35、on will remain unchanged until the stability date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. IMPORTANT The colour inside logo on

36、the cover page of this publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore print this document using a colour printer. BS EN 62047-16:2015IEC 62047-16:2015 IEC 2015 5 SEMICONDUCTOR DEVICES MICRO-ELECTR

37、OMECHANICAL DEVICES Part 16: Test methods for determining residual stresses of MEMS films Wafer curvature and cantilever beam deflection methods 1 Scope This part of IEC 62047 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 m to 10 m in MEMS s

38、tructures fabricated by wafer curvature or cantilever beam deflection methods. The films should be deposited onto a substrate of known mechanical properties of Youngs modulus and Poissons ratio. These methods are used to determine the residual stresses within thin films deposited on substrate 11. 2

39、Normative references The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendme

40、nts) applies. IEC 62047-21, Semiconductor devices Micro-electromechanical devices Part 21: Test method for Poissons ratio of thin film MEMS materials 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. 3.1 residual stress fstress that remains after t

41、he original cause of the stresses (external forces, heat source) has been removed 3.2 curvature amount by which a geometric object deviates from being flat Note 1 to entry: In case of a circle, = 1/R where R is the radius. 3.3 body object with mass, not only energy, that is three dimensional (extend

42、ed in 3-dimensions of space), has a trajectory of position and orientation in space, and is lasting for some duration of time _ 1Numbers in square brackets refer to the Bibliography. BS EN 62047-16:2015 6 IEC 62047-16:2015 IEC 2015 4 Testing methods 4.1 General The deposition of a film shall make th

43、e bi-layer structure to bend together due to residual stresses in the film. The amount of deflection is directly related to the residual stresses of the film. There are two kinds of test methods such as wafer curvature method and cantilever beam deflection method in order to measure the residual str

44、ess. In the case of tensile residual stress, the substrate bonded to the film becomes concave, whereas for a compressive residual stress, it becomes convex. 4.2 Wafer curvature method 4.2.1 General Wafer curvature method should be used in a wafer level processing. A wafer should be biaxial symmetric

45、 and stress free. Stoney 2 used a bi-layer plate system composed of a stress bearing thin film, of uniform thickness hf, deposited on a relatively thick substrate, of uniform thickness hs, and derived a simple Equation (1), so-called Stoneys equation, relating the curvature, , of the system as shown

46、 in Figure 1, to the stress, fof the film as follows 3: fs2sSf)-6(1 hvhE = (1) where f and s are film and substrate, respectively; E is the Youngs modulus; is Poissons ratio (see IEC 62047-21) The formula has been extensively used in the literature to infer film stress changes from experimental meas

47、urement of system curvature changes 4. a) Substrate before depositing thin film b) After depositing thin film on substrate Figure 1 Schematic drawing of compressive residual stress induced curvature after depositing thin film on substrate The following assumptions should be satisfied in order to use

48、 Equation (1) 3: IEC R, (=1/R)hshshfBS EN 62047-16:2015IEC 62047-16:2015 IEC 2015 7 a) both the film thickness hfand substrate thickness hsshould be uniform and small compared with the lateral dimensions; b) the film shall cover the one side surface of a circular substrate; c) the strains and rotati

49、ons of the plate system should be very small; d) the substrate material should be homogeneous, isotropic, and linearly elastic and the film material should be isotropic; e) the film stress states should be in-plane isotropic or equibiaxial (two equal stress components in any two, mutually orthogonal in-plane directions) while the out-of-plane direct stress and all shear stresses vanish; f) the systems curvature component