BS EN 62047-2-2006 Semiconductor devices - Micro-electromechanical devices - Part 2 Tensile testing method of thin film materials《半导体器件 微型机电器件 薄膜材料的拉伸试验方法》.pdf

1、 g49g50g3g38g50g51g60g44g49g42g3g58g44g55g43g50g56g55g3g37g54g44g3g51g40g53g48g44g54g54g44g50g49g3g40g59g38g40g51g55g3g36g54g3g51g40g53g48g44g55g55g40g39g3g37g60g3g38g50g51g60g53g44g42g43g55g3g47g36g58devices Part 2: Tensile testing method of thin film materialsThe European Standard EN 62047-2:2006

2、has the status of a British StandardICS 31.080.99Semiconductor devices Micro-electromechanical BRITISH STANDARDBS EN 62047-2:2006BS EN 62047-2:2006This British Standard was published under the authority of the Standards Policy and Strategy Committee on 30 November 2006 BSI 2006ISBN 0 580 49740 2Amen

3、dments issued since publicationAmd. No. Date Commentscontract. Users are responsible for its correct application.Compliance with a British Standard cannot confer immunity from legal obligations.National forewordThis British Standard was published by BSI. It is the UK implementation of EN 62047-2:200

4、6. It is identical with IEC 62047-2:2006.The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors.A list of organizations represented on EPL/47 can be obtained on request to its secretary.This publication does not purport to include all the necessary provis

5、ions of a EUROPEAN STANDARD EN 62047-2 NORME EUROPENNE EUROPISCHE NORM September 2006 CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B - 1050 Bru

6、ssels 2006 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 62047-2:2006 E ICS 31.080.99 English version Semiconductor devices - Micro-electromechanical devices Part 2: Tensile testing method of thin film materials (IEC 62047-2:200

7、6) Dispositifs semiconducteurs - Dispositifs microlectromcaniques Partie 2: Mthode dessai de traction des matriaux en couche mince (CEI 62047-2:2006) Halbleiterbauelemente - Bauteile der Mikrosystemtechnik Teil 2: Prfverfahren zur Zugbeanspruchung bei Dnnschicht-Werkstoffen (IEC 62047-2:2006) This E

8、uropean Standard was approved by CENELEC on 2006-09-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical refere

9、nces concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC me

10、mber into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland

11、, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland and the United Kingdom. Foreword The text of document 47/1865/FDIS, future edition 1 of IEC 62047-2, prepared by IEC TC 47, Semiconductor devices, was sub

12、mitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 62047-2 on 2006-09-01. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2007-06-01 latest date by whic

13、h the national standards conflicting with the EN have to be withdrawn (dow) 2009-09-01 Annex ZA has been added by CENELEC. _ Endorsement notice The text of the International Standard IEC 62047-2:2006 was approved by CENELEC as a European Standard without any modification. _ EN 62047-2:2006 2 CONTENT

14、S 1 Scope.4 2 Normative references .4 3 Symbols and designations4 4 Testing method and test apparatus.5 4.1 Method of gripping 5 4.2 Method of loading5 4.3 Speed of testing 5 4.4 Force measurement 5 4.5 Elongation measurement.5 4.6 Stress-strain curve 6 4.7 Environment control 6 5 Test piece 6 5.1 G

15、eneral .6 5.2 Plane shape of test piece 6 5.3 Test piece thickness7 5.4 Gauge mark 7 6 Test report7 Annex A (informative) Test piece grip methods 8 Annex B (normative) Testing conditions .10 Annex C (informative) Test piece .11 EN 62047-2:2006 3 Annex ZA (normative) Normative references to internati

16、onal publications with theircorresponding European publications13 SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 2: Tensile testing method of thin film materials 1 Scope This International Standard specifies the method for tensile testing of thin film materials with length and width unde

17、r 1 mm and thickness under 10 m, which are main structural materials for micro-electromechanical systems (MEMS), micromachines and similar devices. The main structural materials for MEMS, micromachines and similar devices have special features such as typical dimensions in the order of a few microns

18、, a material fabrication by deposition, and a test piece fabrication by non-mechanical machining using etching and photolithography. This International Standard specifies the testing method, which enables a guarantee of accuracy corresponding to the special features. 2 Normative references The follo

19、wing referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. ISO 6892, Metallic materials Tensile testing at ambient te

20、mperature 3 Symbols and designations Symbols and corresponding designations are given in Table 1. Table 1 Symbols and designations of a test piece Symbol Unit Designation a m Thickness of a test piece b m Width of the parallel length of a test piece Lom Original gauge length Lcm Parallel length Ltm

21、Total length of test piece Som2Original cross-sectional area of the parallel length R m Radius of curvature of the transition curves between the gripped ends and the parallel length EN 62047-2:2006 4 a b L0S0R Grip ends Gauge mark LcLtIEC 1424/06 Figure 1 Thin film test piece 4 Testing method and te

22、st apparatus 4.1 Method of gripping The test piece should be gripped to the test apparatus to prevent unwanted stress such as bending and shear stress during the test. The grip should have the following two properties: a) fixing force is uniformly applied on the gripped end of the test piece; b) the

23、 grips are aligned to the tensile axis of the test apparatus. The test apparatus should have a test piece alignment mechanism to align the test piece tensile axis to the moving direction of the test apparatus. See Annex A. 4.2 Method of loading The tensile force should be applied along the tensile a

24、xis of the test piece to avoid the bending stress to the test piece. The tensile axis and the moving direction should be aligned. The following two conditions should be satisfied to prevent the generation of the bending stress: a) linearity of movement in the test apparatus, b) alignment between the

25、 tensile axis of the test piece and the moving axis of the test apparatus. 4.3 Speed of testing The straining rate should be lower than 0,01 /s. The straining rate or the stress rate should be constant during the test. See Clause B.1. 4.4 Force measurement A load cell with enough resolution, which g

26、uarantees 5 % accuracy of the measured tensile strength, shall be used for the force measurement. See Clause B.2. 4.5 Elongation measurement The measurement method that enables to measure 0,1 % strain value shall be used. EN 62047-2:2006 5 The gauge mark measurement method is recommended because the

27、 elongation of the curve and gripped end and the deformation of the test apparatus cannot be negligible. The elongation of the curve part of the plane shape test piece is larger than that of the rod type test piece. The load cell of low force range has a low stiffness. The gauge marks for elongation

28、 measurement should be formed on the parallel part of the test piece and the elongation should be measured by a non-contacting method. When the gauge mark is fabricated with thin film material, it shall be thinner enough than the test piece and be formed by low stiffness and low internal stress mate

29、rial so that the elongation of the test piece may not be restrained. See Clause B.3. 4.6 Stress-strain curve The stress-strain curve that is ordinarily used should be used. Refer to the figures in ISO 6892. 4.7 Environment control The test environment shall be controlled not to change the temperatur

30、e and the humidity during the test. 5 Test piece 5.1 General The test piece should be fabricated using a process as similar as possible to that of the device where the thin film is applied. It should have dimensions in the same order as that of the objective device component, in order to minimize th

31、e influence of size. The gripped end of the test piece should be temporarily fixed to the frame that supports the test piece until the test piece is fixed to the test apparatus. The thin film, which has internal stress distribution along the thickness, cannot be handled due to curling after release

32、from the substrate. 5.2 Plane shape of test piece The dimensions of a test piece, such as length, width and gauge length, should be designed to be of the same order as the dimensions of the device in order to minimize the size effect. The dimensions shall be specified within an accuracy range of 1 %

33、. The parallel length of the test piece shall be more than 2,5 times the width. See Clause C.1. The curve part between the gripped ends and the parallel part should have a large enough radius of curvature not to fracture at the curve part due to stress concentration. The shape of the curve part shou

34、ld be smooth enough so that it does not to fracture at the curve part. See Clause C.2. The substrate under the parallel and curve parts of the test piece shall be removed in order that the remaining substrate does not affect the test results. It is required that the process, which removes the substr

35、ate material, should not damage the test piece. EN 62047-2:2006 6 5.3 Test piece thickness Each test piece thickness shall be measured and the measured thickness shall be attached to the report. Thickness measurement accuracy shall be less than 5 %. Each test piece thickness should be measured direc

36、tly. However, the film thickness evaluated from step height of a window opening etched near to the test piece can be used as a thickness of the specimen, in order to avoid mechanical damage introduced by a stylus profiler. The position of the window should be determined within the area where the tes

37、t piece thickness can be estimated within the accuracy range of 1 % considering the thickness variation over the wafer. See Clause C.3. 5.4 Gauge mark Gauge marks should be formed on the test piece in order to measure the elongation. The gauge length should be less than 80 % of the parallel length a

38、nd more than twice the width. The gauge marks should not restrict the elongation of the test piece and should have small influence on the test result. For this reason, the gauge mark should be thin as long as contrast is obtained, or the elastic modulus and the internal stress of the material used f

39、or the gauge marks should be much lower than those of the test piece material. A metal film is recommended as a gauge mark material. The thickness of the gauge marks should be less than 1 % of the test piece thickness. See Clause C.4. 6 Test report The test report shall contain at least the followin

40、g information: a) reference to this International Standard, i.e. IEC 62047-2; b) identification of the test piece; c) test piece material; in case of single crystal: crystallographic orientation in case of polycrystal: texture and grain size internal stress d) shape and dimension of test piece; e) t

41、est piece fabrication method and its detail; deposition method annealing condition fabrication condition f) measured properties and results. EN 62047-2:2006 7 Annex A (informative) Test piece grip methods A.1 Electrostatic grip method An electrostatic grip method uses electrostatic force to chuck a

42、test piece. A cantilever beam having large paddles on its free end is used as a test piece. For conductive materials, electrostatic force for fixing the test piece is generated by applying voltage between the test piece and a chuck device (probe). The substrate of the test piece is fixed by such mea

43、ns as a vacuum chuck, an electrostatic chuck, a screw, etc. A.2 Adhesive method Optimum adhesive should be selected considering materials of test piece and fixture, and maximum load for the grip by the adhesive method. The coating quantity of the adhesive should be determined by an area of the test

44、piece grip part. When the test piece is loaded during the solidification process, the position of the test piece (upper, lower, left, right) should be adjusted properly. An adhesive solidified by ultraviolet ray irradiation may be used. A.3 Mechanical grip method The mechanical grip method is a simp

45、le test piece grip method where the test piece grip part is gripped mechanically. Since this method is possible to grip a test piece by a comparatively large force, it is possible to avoid grip-slipping problems and to grip test pieces which require a comparatively large load. It is also possible to

46、 carry it out in case of comparatively large load displacement. However, it is important to prevent grip breaking in this method. For this purpose it is required to grip the test piece grip part by uniform force all over the part. It is required that both grip surfaces are sufficiently smooth and no

47、t rugged, and the linear motion of the grip is sufficiently precise. It is also required that the test part of the test piece is sufficiently smaller than the grip part in order to prevent grip breaking. Under the existing conditions, a reinforcement part such as the silicon substrate is required in

48、 case of brittle materials such as silicon thin film. It is desirable that the gripping force is controllable in case of gripping the test piece. A.4 Tensile mechanism integration method (on-chip method) Since the test piece and a part of the tensile mechanism are integrated in a silicon die, the al

49、ignment between the tensile axis of the test piece and the moving axis of the test apparatus, the positioning between the test piece and the gripping element, and the gripping action of the test piece are not necessary in this method. There are different methods for applying displacement between both ends of the specimen. One is to use an external needle pushing down a silicon lever integrated on the chip, whose movement is converted to tensile motion by a lever mechan