1、raising standards worldwideNO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAWBSI Standards PublicationIntegrated circuits Measurement of electromagnetic immunityPart 2: Measurement of radiated immunity TEM cell and wideband TEM cell methodBS EN 62132-2:2011National forewordThis B
2、ritish Standard is the UK implementation of EN 62132-2:2011. It is identical to IEC 62132-2:2010.The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained on request to its secretary.This
3、publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. BSI 2011ISBN 978 0 580 57114 5 ICS 31.200Compliance with a British Standard cannot confer immunity from legal obligations.This British Standard was published under t
4、he authority of the Standards Policy and Strategy Committee on 30 April 2011.Amendments issued since publicationAmd. No. Date Text affectedBRITISH STANDARDBS EN 62132-2:2011EUROPEAN STANDARD EN 62132-2 NORME EUROPENNE EUROPISCHE NORM March 2011 CENELEC European Committee for Electrotechnical Standar
5、dization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Management Centre: Avenue Marnix 17, B - 1000 Brussels 2011 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 62132-2:2011 E I
6、CS 31.200 English version Integrated circuits - Measurement of electromagnetic immunity - Part 2: Measurement of radiated immunity - TEM cell and wideband TEM cell method (IEC 62132-2:2010) Circuits intgrs - Mesure de limmunit lectromagntique - Partie 2: Mesure de limmunit rayonne - Mthode de cellul
7、e TEM et cellule TEM large bande (CEI 62132-2:2010) Integrierte Schaltungen - Messung der elektromagnetischen Strfestigkeit - Teil 2: Messung der Strfestigkeit bei Einstrahlungen - TEM-Zellen- und Breitband-TEM-Zellenverfahren (IEC 62132-2:2010) This European Standard was approved by CENELEC on 2011
8、-01-02. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be o
9、btained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the C
10、entral Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, L
11、uxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland and the United Kingdom. BS EN 62132-2:2011EN 62132-2:2011 - 2 - Foreword The text of document 47A/838/FDIS, future edition 1 of IEC 62132-2, prepared by SC 47A, Integrated circuits, o
12、f IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 62132-2 on 2011-01-02. This part of EN 62132 is to be read in conjunction with EN 62132-1. Attention is drawn to the possibility that some of the elements of this document may be the
13、subject of patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent rights. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2011-10-
14、02 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2014-01-02 Annex ZA has been added by CENELEC. _ Endorsement notice The text of the International Standard IEC 62132-2:2010 was approved by CENELEC as a European Standard without any modification. In th
15、e official version, for Bibliography, the following notes have to be added for the standards indicated: 7 IEC 61000-4-3:2006 NOTE Harmonized as EN 61000-4-3:2006 (not modified). IEC 61000-4-3:2006/A1:2007 NOTE Harmonized as EN 61000-4-3:2006/A1:2008 (not modified). 8 IEC 61000-4-6:2008 NOTE Harmoniz
16、ed as EN 61000-4-6:2009 (not modified). 9 IEC 61000-4-20:2003 NOTE Harmonized as EN 61000-4-20:2003 (not modified). 10 CISPR 16-1-1:2006 NOTE Harmonized as EN 55016-1-1:2007 (not modified). 12 CISPR 16-1-5:2003 NOTE Harmonized as EN 55016-1-5:2004 (not modified). 13 CISPR 16-2-1:2008 NOTE Harmonized
17、 as EN 55016-2-1:2009 (not modified). 15 CISPR 16-2-3:2006 NOTE Harmonized as EN 55016-2-3:2006 (not modified). 16 CISPR 16-2-4:2003 NOTE Harmonized as EN 55016-2-4:2004 (not modified). _ BS EN 62132-2:2011- 3 - EN 62132-2:2011 Annex ZA (normative) Normative references to international publications
18、with their corresponding European publications The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. NO
19、TE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies. Publication Year Title EN/HD Year IEC 60050-131 2002 International Electrotechnical Vocabulary (IEV) - Part 131: Circuit theory - - IEC 60050-161 1990 International Electro
20、technical Vocabulary (IEV) - Chapter 161: Electromagnetic compatibility - - IEC 61967-2 - Integrated circuits - Measurement of electromagnetic emissions, 150 kHz to 1 GHz - Part 2: Measurement of radiated emissions - TEM cell and wideband TEM cell method EN 61967-2 - IEC 62132-1 2006 Integrated circ
21、uits - Measurement of electromagnetic immunity, 150 kHz to 1 GHz - Part 1: General conditions and definitions EN 62132-1 + corr. November 2006 2006 BS EN 62132-2:2011 2 62132-2 IEC:2010 CONTENTS 1 Scope.5 2 Normative references 5 3 Terms and definitions 5 4 General . 6 5 Test conditions .7 6 Test eq
22、uipment.7 6.1 General . 7 6.2 Cables. 7 6.3 RF disturbance source . 7 6.4 TEM cell 8 6.5 Gigahertz TEM cell8 6.6 50- termination . 8 6.7 DUT monitor. 8 7 Test set-up 8 7.1 General . 8 7.2 Test set-up details.8 7.3 EMC test board . 10 8 Test procedure .10 8.1 General .10 8.2 Immunity measurement 10 8
23、.2.1 General . 10 8.2.2 RF disturbance signals . 10 8.2.3 Test frequencies .11 8.2.4 Test levels and dwell time 11 8.2.5 DUT monitoring 11 8.2.6 Detail procedure .11 9 Test report.12 Annex A (normative) Field strength characterization procedure. 13 Annex B (informative) TEM CELL and wideband TEM cel
24、l descriptions . 21 Bibliography. 22 Figure 1 TEM and GTEM cell cross-section 9 Figure 2 TEM cell test set-up .9 Figure 3 GTEM cell test set-up. .10 Figure 4 Immunity measurement procedure flowchart .12 Figure A.1 E-field characterization test fixture. .14 Figure A.2 The electric field to voltage tr
25、ansfer function. 16 Figure A.3 H-field characterization test fixture. .19 Figure A.4 The magnetic field to voltage transfer function . 20 BS EN 62132-2:201162132-2 IEC:2010 5 INTEGRATED CIRCUITS MEASUREMENT OF ELECTROMAGNETIC IMMUNITY Part 2: Measurement of radiated immunity TEM cell and wideband TE
26、M cell method 1 Scope This International Standard specifies a method for measuring the immunity of an integrated circuit (IC) to radio frequency (RF) radiated electromagnetic disturbances. The frequency range of this method is from 150 kHz to 1 GHz, or as limited by the characteristics of the TEM ce
27、ll. 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60050-131:2002, In
28、ternational Electrotechnical Vocabulary (IEV) Part 131: Circuit theory IEC 60050-161:1990, International Electrotechnical Vocabulary (IEV) Chapter 161: Electromagnetic compatibility IEC 61967-2, Integrated circuits Measurement of electromagnetic emissions, 150 kHz to 1 GHz Part 2: Measurement of rad
29、iated emissions TEM cell and wideband TEM cell method IEC 62132-1:2006, Integrated circuits Measurement of electromagnetic immunity, 150 kHz to 1 GHz Part 1: General conditions and definitions 3 Terms and definitions For the purpose of this document, the definitions in IEC 62132-1, IEC 60050-131 and
30、 IEC 60050-161, as well as the following, apply. 3.1 transverse electromagnetic mode (TEM) waveguide mode in which the components of the electric and magnetic fields in the propagation direction are much less than the primary field components across any transverse cross-section 3.2 TEM waveguide ope
31、n or closed transmission line system, in which a wave is propagating in the transverse electromagnetic mode to produce a specified field for testing purposes. BS EN 62132-2:2011 6 62132-2 IEC:2010 3.3 TEM cell enclosed TEM waveguide, often a rectangular coaxial line, in which a wave is propagated in
32、 the transverse electromagnetic mode to produce a specified field for testing purposes. The outer conductor completely encloses the inner conductor 3.4 two-port TEM waveguide TEM waveguide with input/output measurement ports at both ends 3.5 one-port TEM waveguide TEM waveguide with a single input/o
33、utput measurement port NOTE Such TEM waveguides typically feature a broadband line termination at the non-measurement-port end. 3.6 characteristic impedance for any constant phase wave-front, the magnitude of the ratio of the voltage between the inner conductor and the outer conductor to the current
34、 on either conductor NOTE The characteristic impedance is independent of the voltage/current magnitudes and depends only on the cross-sectional geometry of the transmission line. TEM waveguides are typically designed to have a 50 characteristic impedance. TEM waveguides with a 100 characteristic imp
35、edance are often used for transient testing. 3.7 anechoic material material that exhibits the property of absorbing, or otherwise reducing, the level of electromagnetic energy reflected from that material 3.8 broadband line termination termination which combines a low-frequency discrete-component lo
36、ad, to match the characteristic impedance of the TEM waveguides (typically 50 ), and a high-frequency anechoic-material volume 3.9 primary (field) component electric field component aligned with the intended test polarization NOTE For example, in conventional two-port TEM cells, the septum is parall
37、el to the horizontal floor, and the primary mode electric field vector is vertical at the transverse centre of the TEM cell. 3.10 secondary (field) component in a Cartesian coordinate system, either of the two electric field components orthogonal to the primary field component and orthogonal to each
38、 other 4 General The IC to be evaluated for EMC performance is referred to as the device under test (DUT). The DUT shall be mounted on a printed circuit board (PCB), referred to as the EMC test board. The EMC test board is provided with the appropriate measurement or monitoring points at which the D
39、UT response parameters can be measured. The EMC test board is clamped to a mating port (referred to as a wall port) cut in the top or bottom of a transverse electromagnetic mode (TEM) cell. Either a two-port TEM cell or a one-port TEM cell may be used. Within this standard, a two-port TEM cell is re
40、ferred to as a TEM cell while a one-port TEM cell is referred to as a wideband (Gigahertz) TEM, or GTEM, cell. BS EN 62132-2:201162132-2 IEC:2010 7 The test board is not positioned inside the cell, as in the conventional usage, but becomes a part of the cell wall. This method is applicable to any TE
41、M or GTEM cell modified to incorporate the wall port; however, the measured response of the DUT will be affected by many factors. The primary factor affecting the DUTs response is the septum to EMC test board (cell wall) spacing. NOTE 1 This procedure was developed using a 1 GHz TEM cell with a sept
42、um to housing spacing of 45 mm and a GTEM cell with a septum to housing spacing of 45 mm at the centre of the wall port. The EMC test board controls the geometry and orientation of the DUT relative to the cell and eliminates any connecting leads within the cell (these are on the backside of the boar
43、d, which is outside the cell). For the TEM cell, one of the 50 ports is terminated with a 50 load. The other 50 port for a TEM cell, or the single 50 port for a GTEM cell, is connected to the output of an RF disturbance generator. The injected CW disturbance signal exposes the DUT to a plane wave el
44、ectromagnetic field where the electric field component is determined by the injected voltage and the distance between the DUT and the septum of the cell. The relationship is given by E = V/h where E is the field strength (V/m) within the cell; V is the applied voltage (V) across the 50 load; and h i
45、s the height (m) between the septum and the centre of the IC package. Rotating the EMC test board in the four possible orientations in the wall port of the TEM or GTEM cell is required to determine the sensitivity of the DUT to induced magnetic fields. Dependent upon the DUT, the response parameters
46、 of the DUT may vary (e.g. a change of current consumption, deterioration in function performance, waveform jitter, etc.) The intent of this test method is to provide a quantitative measure of the RF immunity of ICs for comparison or other purposes. NOTE 2 Additional information on the use and chara
47、cterization of TEM cells for radiated immunity testing can be found in IEC 61000-4-20. 5 Test conditions The test conditions shall meet the requirements as described in IEC 62132-1. 6 Test equipment 6.1 General The test equipment shall meet the requirements as described in IEC 62132-1. In addition,
48、the following test equipment requirements shall apply. 6.2 Cables Double shielded or semi-rigid coaxial cable may be required depending on the local RF ambient conditions. 6.3 RF disturbance source The RF disturbance source may comprise an RF signal generator with a modulation function, an RF power
49、amplifier, and an optional variable attenuator. The gain (or attenuation) of the RF disturbance generating equipment, without the TEM or GTEM cell, shall be known with a tolerance of 0,5 dB. BS EN 62132-2:2011 8 62132-2 IEC:2010 6.4 TEM cell The TEM cell used for this test procedure is a two-port TEM waveguide and shall be fitted with a wall port sized to mate with the EMC test board. The TEM cell shall not exhibit higher
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