1、BSI Standards PublicationIntegrated circuits Measurement of impulse immunityPart 3: Non-synchronous transient injection methodBS EN 62215-3:2013National forewordThis British Standard is the UK implementation of EN 62215-3:2013. It isidentical to IEC 62215-3:2013.The UK participation in its preparati
2、on was entrusted to TechnicalCommittee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained onrequest to its secretary.This publication does not purport to include all the necessary provisions ofa contract. Users are responsible for its correct application. Th
3、e British Standards Institution 2013.Published by BSI Standards Limited 2013ISBN 978 0 580 69165 2ICS 31.200 Compliance with a British Standard cannot confer immunity fromlegal obligations.This British Standard was published under the authority of theStandards Policy and Strategy Committee on 31 Oct
4、ober 2013.Amendments/corrigenda issued since publicationDate Text affectedBRITISH STANDARDBS EN 62215-3:2013EUROPEAN STANDARD EN 62215-3 NORME EUROPENNE EUROPISCHE NORM October 2013 CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europi
5、sches Komitee fr Elektrotechnische Normung CEN-CENELEC Management Centre: Avenue Marnix 17, B - 1000 Brussels 2013 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 62215-3:2013 E ICS 31.200 English version Integrated circuits - Mea
6、surement of impulse immunity - Part 3: Non-synchronous transient injection method (IEC 62215-3:2013) Circuits intgrs - Mesure de limmunit aux impulsions - Partie 3: Mthode dinjection de transitoires non synchrones (CEI 62215-3:2013) Integrierte Schaltungen - Messung der Strfestigkeit gegen Impulse -
7、 Teil 3: Asynchrones Transienteneinspeisungs-Verfahren (IEC 62215-3:2013) This European Standard was approved by CENELEC on 2013-08-21. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a natio
8、nal standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A
9、version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulga
10、ria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerl
11、and, Turkey and the United Kingdom. BS EN 62215-3:2013EN 62215-3:2013 - 2 - Foreword The text of document 47A/881/CDV, future edition 1 of IEC 62215-3, prepared by SC 47A “Integrated circuits” of IEC/TC 47 “Semiconductor devices” was submitted to the IEC-CENELEC parallel vote and approved by CENELEC
12、 as EN 62215-3:2013. The following dates are fixed: latest date by which the document has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2014-05-21 latest date by which the national standards conflicting with the document have to be withd
13、rawn (dow) 2016-08-21 Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC and/or CEN shall not be held responsible for identifying any or all such patent rights. Endorsement notice The text of the International Standard IEC 62
14、215-3:2013 was approved by CENELEC as a European Standard without any modification. BS EN 62215-3:2013- 3 - EN 62215-3:2013 Annex ZA (normative) Normative references to international publications with their corresponding European publications The following documents, in whole or in part, are normati
15、vely referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. NOTE When an international publication has been modified by comm
16、on modifications, indicated by (mod), the relevant EN/HD applies. Publication Year Title EN/HD Year IEC 60050 Series International Electrotechnical Vocabulary (IEV) - - IEC 61000-4-4 2012 Electromagnetic compatibility (EMC) - Part 4-4: Testing and measurement techniques - Electrical fast transient/b
17、urst immunity test EN 61000-4-4 2012 IEC 61000-4-5 + corr. October 2005 2009 Electromagnetic compatibility (EMC) - Part 4-5: Testing and measurement techniques - Surge immunity test EN 61000-4-5 2006 IEC 62132-4 2006 Integrated circuits - Measurement of electromagnetic immunity, 150 kHz to 1 GHz - P
18、art 4: Direct RF power injection method EN 62132-4 2006 ISO 7637-2 2011 Road vehicles - Electrical disturbances from conduction and coupling - Part 2: Electrical transient conduction along supply lines only - - BS EN 62215-3:2013 2 62215-3 IEC:2013 CONTENTS 1 Scope . 6 2 Normative references . 6 3 T
19、erms and definitions . 6 4 General 8 5 Coupling networks 9 5.1 General on coupling networks . 9 5.2 Supply injection network 9 5.2.1 Direct injection 9 5.2.2 Capacitive coupling . 10 5.3 Input injection 10 5.4 Output injection . 11 5.5 Simultaneous multiple pin injection 12 6 IC configuration and ev
20、aluation 12 6.1 IC configuration and operating modes . 12 6.2 IC monitoring . 13 6.3 IC performance classes . 13 7 Test conditions . 14 7.1 General . 14 7.2 Ambient electromagnetic environment . 14 7.3 Ambient temperature . 14 7.4 IC supply voltage . 14 8 Test equipment . 14 8.1 General requirements
21、 for test equipment . 14 8.2 Cables . 14 8.3 Shielding . 14 8.4 Transient generator . 14 8.5 Power supply . 14 8.6 Monitoring and stimulation equipment . 14 8.7 Control unit . 15 9 Test set up . 15 9.1 General . 15 9.2 EMC test board . 15 10 Test procedure . 17 10.1 Test plan . 17 10.2 Test preparat
22、ion 17 10.3 Characterization of coupled impulses 17 10.4 Impulse immunity measurement 17 10.5 Interpretation and comparison of results 18 10.6 Transient immunity acceptance level . 18 11 Test report 18 Annex A (informative) Test board recommendations 19 Annex B (informative) Selection hints for coup
23、ling and decoupling network values . 24 Annex C (informative) Industrial and consumer applications 26 Annex D (informative) Vehicle applications 29 BS EN 62215-3:201362215-3 IEC:2013 3 Figure 1 Typical pin injection test implementation 9 Figure 2 Supply pin direct injection test implementation . 10
24、Figure 3 Supply pin capacitive injection test implementation 10 Figure 4 Input pin injection test implementation . 11 Figure 5 Output pin injection test implementation . 12 Figure 6 Multiple pin injection test implementation . 12 Figure 7 Test set-up diagram . 15 Figure 8 Example of the routing from
25、 the injection port to a pin of the DUT . 16 Figure A.1 Typical EMC test board topology. 22 Figure A.2 Example of implementation of multiple injection structures . 23 Table A.1 Position of vias over the board . 19 Table C.1 Definition of pin types 26 Table C.2 Test circuit values 27 Table C.3 Exampl
26、e of IC impulse test level (IEC 61000-4-4) 28 Table D.1 IC pin type definition 29 Table D.2 Transient test level 12 V (ISO 7637-2) . 30 Table D.3 Transient test level 24 V (ISO 7637-2) . 31 Table D.4 Example of transient test specification . 32 BS EN 62215-3:2013 6 62215-3 IEC:2013 INTEGRATED CIRCUI
27、TS MEASUREMENT OF IMPULSE IMMUNITY Part 3: Non-synchronous transient injection method 1 Scope This part of IEC 62215 specifies a method for measuring the immunity of an integrated circuit (IC) to standardized conducted electrical transient disturbances. The disturbances, not necessarily synchronized
28、 to the operation of the device under test (DUT), are applied to the IC pins via coupling networks. This method enables understanding and classification of interaction between conducted transient disturbances and performance degradation induced in ICs regardless of transients within or beyond the sp
29、ecified operating voltage range. 2 Normative references The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referen
30、ced document (including any amendments) applies. IEC 60050 (all parts), International Electrotechnical Vocabulary (IEV) (available at ) IEC 61000-4-4:2012, Electromagnetic compatibility (EMC) Part 4-4: Testing and measurement techniques Electrical fast transient/burst immunity test IEC 61000-4-5:200
31、5, Electromagnetic compatibility (EMC) Part 4-5: Testing and measurement techniques Surge immunity test IEC 62132-4:2006, Integrated circuits Measurement of electromagnetic immunity 150 kHz to 1 GHz Part 4: Direct RF power injection method ISO 7637-2:2011, Road vehicles Electrical disturbances from
32、conduction and coupling Part 2: Electrical transient conduction along supply lines only 3 Terms and definitions For the purposes of this document, the terms and definitions given in IEC 60050-131 and IEC 60050-161, some of which have been added for convenience, as well as the following apply. 3.1 au
33、xiliary equipment equipment not under test but is indispensable for setting up all the functions and assessing the correct performance (operation) of the equipment under test (EUT) during its exposure to the disturbance 3.2 burst sequence of a limited number of distinct impulses or an oscillation of
34、 limited duration BS EN 62215-3:201362215-3 IEC:2013 7 3.3 coupling network electrical circuit for transferring energy from one circuit to another with well-defined impedance and known transfer characteristics 3.4 performance degradation undesired departure in the operational performance of any devi
35、ce, equipment or system from its intended performance Note 1 to entry: The term “degradation” can apply to temporary or permanent failure. 3.5 DUT device under test device, equipment or system being evaluated Note 1 to entry: In this part of IEC 62215, it refers to a semiconductor device being teste
36、d. Note 2 to entry: This note applies to the French language only. 3.6 EMC electromagnetic compatibility ability of an equipment or system to function satisfactorily in its electromagnetic environment without introducing intolerable electromagnetic disturbance to anything in that environment 3.7 glo
37、bal pin pin that carries a signal or power which enters or leaves the application board without any active device in between 3.8 immunity ability of a device, equipment or system to perform without degradation in the presence of an electromagnetic disturbance 3.9 jitter short-term variations of the
38、significant instants of a digital signal from their ideal positions in time 3.10 local pin pin that carries a signal or power which does not leave the application board Note 1 to entry: The signal or power remains on the application board as a signal between two components with or without additional
39、 EMC circuitry. 3.11 response signal signal generated by the DUT for the purpose of monitoring for detecting performance degradation 3.12 electromagnetic ambient totality of electromagnetic phenomena existing at a given location BS EN 62215-3:2013 8 62215-3 IEC:2013 3.13 transient pertaining to or d
40、esignating a phenomenon or a quantity which varies between two consecutive steady states during a time interval which is short compared with the time-scale of interest 3.14 surge voltage transient voltage wave propagating along a line or a circuit and characterized by rapid increase followed by a sl
41、ower decrease of the voltage 3.15 VS power supply input 3.16 ZLline impedance of a trace on the test board 4 General Electrical transients are a common part of the EMC environment of electrical and electronic devices. These transients are generated often on power nets and are directly applied or cou
42、pled to the terminals of integrated circuits which may affect the functionality of the device. The knowledge about the impulse immunity level enables the optimization of the IC as well as the definition of application requirements. The transient waveforms are dependent on the application area of the
43、 DUT. Typical transient waveforms are burst and surge voltages as specified in IEC 61000-4-4 and IEC 61000-4-5 for industrial and consumer applications and in ISO 7637-2 for automotive application to get reproducible and comparable results for different DUTs. The impulse immunity measurement method
44、as described in this standard uses impulses with different amplitude and rise times, duration, energy and polarity in a conductive mode to the IC. In this test method the test time or the number of the applied impulses has to be chosen in a way that statistical effects are covered. This method is si
45、milar to immunity test method of integrated circuits in the presence of conducted RF disturbances defined in IEC 62132-4. As in IEC 62132-4, the disturbance signal can be injected into I/O pins, supply pins and into the PCB reference via defined coupling networks. The EMC test board for this method
46、can be the same as the one specified in IEC 62132-4. The pin injection test method evaluates the performance of individual IC pins or groups of them when subjected to a transient waveform. Both positive and negative polarity transients, referenced to ground are applied. The basic test implementation
47、 is shown in Figure 1 . BS EN 62215-3:201362215-3 IEC:2013 9 ZL= 50 Transient generator IC EMC test board Coupling network GND R IEC 1742/13 Figure 1 Typical pin injection test implementation 5 Coupling networks 5.1 General on coupling networks The transient disturbances are applied to the IC pin un
48、der test via defined coupling networks implemented on the PCB and connected to a device pin with respect to the pin functionality and the disturbance signal. Coupling networks are defined for: supply injection; input injection; output injection; multiple pin injection. The coupling network shown in
49、Figure 1 is identical to that used for RF immunity testing in IEC 62132-4. The series resistance (R) can be used to control the injected current, if required. The capacitance (C) is a DC block with a value selected to represent coupling effects in practice and to provide sufficient signal bandwidth while not excessively loading the connected pin (see Annex B). Default values of the series resistor and DC block capacitor are 0 and 1 nF (representing capacity
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