1、BSI Standards PublicationPower losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systemsPart 1: General requirementsBS EN 62751-1:2014National forewordThis British Standard is the UK implementation of EN 62751-1:2014. It isidentical to IEC 62751-1:2014.The UK pa
2、rticipation in its preparation was entrusted to TechnicalCommittee PEL/22, Power electronics.A list of organizations represented on this committee can be obtained onrequest to its secretary.This publication does not purport to include all the necessary provisions ofa contract. Users are responsible
3、for its correct application. The British Standards Institution 2014.Published by BSI Standards Limited 2014ISBN 978 0 580 76626 8ICS 29.200; 29.240Compliance with a British Standard cannot confer immunity fromlegal obligations.This British Standard was published under the authority of theStandards P
4、olicy and Strategy Committee on 30 November 2014. Amendments/corrigenda issued since publicationDate Text affectedBRITISH STANDARDBS EN 62751-1:2014EUROPEAN STANDARDNORME EUROPENNEEUROPISCHE NORMEN 62751-1 October 2014 ICS 29.200; 29.240 English Version Power losses in voltage sourced converter (VSC
5、) valves for high-voltage direct current (HVDC) systems - Part 1: Generalrequirements (IEC 62751-1:2014) Pertes de puissance dans les valves convertisseur desource de tension (VSC) des systmes en courant continu haute tension (CCHT) - Partie 1: Exigences gnrales(CEI 62751-1:2014) Bestimmung der Leis
6、tungsverluste inSpannungszwischenkreis-Stromrichtern (VSC) frHochspannungsgleichstrom(HG)-Systeme - Teil 1: Allgemeine Anforderungen (IEC 62751-1:2014) This European Standard was approved by CENELEC on 2014-10-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which st
7、ipulate the conditions for giving this European Standard the status of a national standard without any alteration.Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member. This Euro
8、pean Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the official versions.CENELEC mem
9、bers are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, No
10、rway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom. European Committee for Electrotechnical Standardization Comit Europen de Normalisation ElectrotechniqueEuropisches Komitee fr Elektrotechnische Normung CEN-CENELEC Management Centre: Avenu
11、e Marnix 17, B-1000 Brussels 2014 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members. Ref. No. EN 62751-1:2014 E EN 62751-1:2014 - 2 - Foreword The text of document 22F/302/CDV, future edition 1 of IEC 62751-1, prepared by SC 22F “Power electronics
12、 for electrical transmission and distribution systems“, of IEC/TC 22 “Power electronic systems and equipment“ was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 62751-1:2014. The following dates are fixed: latest date by which the document has to be implemented at national
13、level by publication of an identical national standard or by endorsement (dop) 2015-07-01 latest date by which the national standards conflicting with the document have to be withdrawn (dow) 2017-10-01 Attention is drawn to the possibility that some of the elements of this document may be the subjec
14、t of patent rights. CENELEC and/or CEN shall not be held responsible for identifying any or all such patent rights. Endorsement notice The text of the International Standard IEC 62751-1:2014 was approved by CENELEC as a European Standard without any modification. In the official version, for Bibliog
15、raphy, the following note has to be added for the standard indicated: IEC 61803:1999 NOTE Harmonised as EN 61803:1999. BS EN 62751-1:2014- 3 - EN 62751-1:2014 Annex ZA (normative) Normative references to international publications with their corresponding European publications The following document
16、s, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. NOTE 1 When an International
17、Publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies. NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is available here: www.cenelec.eu. Publication Year Title EN/HD Year IEC 60633 - Terminology for
18、high-voltage direct current (HVDC) transmission EN 60633 - IEC 60747-2 - Semiconductor devices - Discrete devices and integrated circuits - Part 2: Rectifier diodes - - IEC 60747-9 2007 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs) - - IEC 62747 2014 T
19、erminology for voltage-sourced converters (VSC) for high-voltage direct current (HVDC) systems EN 62747 2014 BS EN 62751-1:2014 2 IEC 62751-1:2014 IEC 2014 CONTENTS 1 Scope 6 2 Normative references 6 3 Terms and definitions 7 3.1 Converter types 7 3.2 Semiconductor devices . 7 3.3 Converter operatin
20、g states 8 3.4 Device characteristics . 9 3.5 Other definitions . 9 4 General conditions. 10 4.1 General . 10 4.2 Causes of power losses 11 4.3 Categories of valve losses 11 4.4 Operating conditions . 12 4.4.1 General . 12 4.4.2 Reference ambient conditions 12 4.4.3 Reference a.c. system conditions
21、12 4.4.4 Converter operating states. 12 4.4.5 Treatment of redundancy . 12 4.5 Use of real measured data 13 4.5.1 General . 13 4.5.2 Routine testing 13 4.5.3 Characterisation testing . 13 5 Conduction losses . 14 5.1 General . 14 5.2 IGBT conduction losses 16 5.3 Diode conduction losses . 16 5.4 Oth
22、er conduction losses 17 6 D.C. voltage-dependent losses 17 7 Losses in d.c. capacitors . 18 8 Switching losses 18 8.1 General . 18 8.2 IGBT switching losses . 19 8.3 Diode switching losses 20 9 Other losses 21 9.1 Snubber circuit losses . 21 9.2 Valve electronics power consumption 21 10 Total valve
23、losses per converter substation . 22 Annex A (informative) Determination of power losses in other HVDC substation equipment . 25 A.1 General . 25 A.2 Guidance for calculating losses in each equipment . 25 A.2.1 Circuit breaker . 25 A.2.2 Pre-insertion resistor . 25 A.2.3 Line side harmonic filter .
24、26 BS EN 62751-1:2014IEC 62751-1:2014 IEC 2014 3 A.2.4 Line side high frequency filter 26 A.2.5 Interface transformer . 26 A.2.6 Converter side harmonic filter 27 A.2.7 Converter side high frequency filter . 27 A.2.8 Phase reactor 27 A.2.9 VSC unit 27 A.2.10 VSC d.c. capacitor . 27 A.2.11 D.C. harmo
25、nic filter 27 A.2.12 Dynamic braking system 27 A.2.13 Neutral point grounding branch 28 A.2.14 D.C. reactor . 28 A.2.15 Common mode blocking reactor . 28 A.2.16 D.C. side high frequency filter 28 A.2.17 D.C. cable or overhead transmission line . 28 A.3 Auxiliaries and station service losses 29 Bibli
26、ography 30 Figure 1 On-state voltage of an IGBT or diode . 14 Figure 2 Piecewise-linear representation of IGBT or diode on-state voltage . 15 Figure 3 IGBT switching energy as a function of collector current 19 Figure 4 Diode recovery energy as a function of current 20 Figure A.1 Major components th
27、at may be found in a VSC substation 26 Table 1 Matrix indicating the relationship of data needed for calculation of losses and the type of valve losses (1 of 2) . 23 BS EN 62751-1:2014 6 IEC 62751-1:2014 IEC 2014 POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT
28、(HVDC) SYSTEMS Part 1: General requirements 1 Scope This part of IEC 62751 sets out the general principles for calculating the power losses in the converter valves of a voltage sourced converter (VSC) for high-voltage direct current (HVDC) applications, independent of the converter topology. Clauses
29、 6 and 8 and subclauses 9.1, 9.2 and A.2.12 of the standard can also be used for calculating the power losses in the dynamic braking valves (where used) and as guidance for calculating the power losses of the valves for a STATCOM installation. Power losses in other items of equipment in the HVDC sub
30、station, apart from the converter valves, are excluded from the scope of this standard. Power losses in most equipment in a VSC substation can be calculated using similar procedures to those prescribed for HVDC systems with line-commutated converters (LCC) in IEC 61803. Annex A presents the main dif
31、ferences between LCC and VSC HVDC substations in so far as they influence the method for determining power losses of other equipment. This standard does not apply to converter valves for line-commutated converter HVDC systems. 2 Normative references The following documents, in whole or in part, are
32、normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60633, Terminology for high-voltage direct current (H
33、VDC) transmission IEC 60747-2, Semiconductor devices Discrete devices and integrated circuits Part 2: Rectifier diodes IEC 60747-9:2007, Semiconductor devices Discrete devices Part 9: Insulated-gate bipolar transistors (IGBTs) IEC 62747:2014, Terminology for voltage-sourced converters (VSC) for high
34、-voltage direct current (HVDC) systems BS EN 62751-1:2014IEC 62751-1:2014 IEC 2014 7 3 Terms and definitions For the purposes of this document, the terms and definitions given in IEC 60633, IEC 62747, IEC 60747-2, IEC 60747-9 as well as the following apply. NOTE 1 Related terms and definitions can a
35、lso be found in IEC TR 62543, IEC 62751-2 and in the other relevant parts of the IEC 60747 series. NOTE 2 Throughout this standard, the term “insulated gate bipolar transistor (IGBT)” is used to indicate a turn-off semiconductor device; however, the standard is equally applicable to other types of t
36、urn-off semiconductor devices such as the GTO, IGCT, ETO, IEGT, etc. 3.1 Converter types 3.1.1 2-level converter converter in which the voltage between the a.c. terminals of the VSC unit and VSC unit midpoint is switched between two discrete d.c. voltage levels Note 1 to entry: VSC unit midpoint is
37、defined in 3.5.9. 3.1.2 multi-level converter converter in which the voltage between the a.c. terminals of the VSC unit and VSC unit midpoint is switched between more than three discrete d.c. voltage levels Note 1 to entry: VSC unit midpoint is defined in 3.5.9. 3.1.3 modular multi-level converter M
38、MC multi-level converter in which each VSC valve consists of a number of MMC building blocks connected in series Note 1 to entry: MMC building block is defined in 3.5.4. Note 2 to entry: This note applies to the French language only. 3.1.4 cascaded two-level converter CTL modular multi-level convert
39、er in which each switch position consists of more than one IGBT-diode pair connected in series Note 1 to entry: IGBT-diode pair is defined in 3.2.4. Note 2 to entry: This note applies to the French language only. 3.2 Semiconductor devices 3.2.1 turn-off semiconductor device controllable semiconducto
40、r device which may be turned on and off by a control signal, for example an IGBT 3.2.2 insulated gate bipolar transistor IGBT turn-off semiconductor device with three terminals: a gate terminal (G) and two load terminals emitter (E) and collector (C) BS EN 62751-1:2014 8 IEC 62751-1:2014 IEC 2014 No
41、te 1 to entry: By applying appropriate gate to emitter voltages, current in one direction can be controlled, i.e. turned on and turned off. Note 2 to entry: This note applies to the French language only. 3.2.3 free-wheeling diode FWD power semiconductor device with diode characteristic Note 1 to ent
42、ry: A FWD has two terminals: an anode (A) and a cathode (K). The current through FWDs is in opposite direction to the IGBT current. FWDs are characterized by the capability to cope with high rates of decrease of current caused by the switching behaviour of the IGBT. Note 2 to entry: This note applie
43、s to the French language only. 3.2.4 IGBT-diode pair arrangement of IGBT and FWD connected in inverse parallel Note 1 to entry: An IGBT-diode pair is usually in one common package; however, it can include individual IGBTs and/or diodes packages connected in parallel. 3.3 Converter operating states 3
44、.3.1 no-load operating state condition in which the VSC substation is energized but the IGBTs are blocked and all substation service loads and auxiliary equipment are connected 3.3.2 idling operating state condition in which the VSC substation is energized and the IGBTs are de-blocked but with no ac
45、tive or reactive power output at the point of common connection to the a.c. network Note 1 to entry: The “idling operating” and “no-load” conditions are similar but from the no-load state several seconds may be needed before power can be transmitted, while from the idling operating state, power tran
46、smission may be commenced almost immediately (less than 3 power frequency cycles). Note 2 to entry: In the idling operating state, the converter is capable of actively controlling the d.c. voltage, in contrast to the no-load state where the behaviour of the converter is essentially “passive”. Note 3
47、 to entry: Losses will generally be slightly lower in the no-load state than in the idling operating state, therefore this operating mode is preferred where the arrangement of the VSC system permits it. 3.3.3 operating state condition in which the VSC substation is energized and the converters are d
48、e-blocked Note 1 to entry: Unlike line-commutated converter, VSC can operate with zero active/reactive power output. 3.3.4 no-load power losses power losses in the VSC valve in the no-load state Note 1 to entry: In some converter designs, it may be necessary to make occasional switching operations f
49、or the purposes of balancing voltages between different parts of the converter. In such converters, the calculation of no-load losses shall take into account the switching frequency of such an operating mode. 3.3.5 idling operating losses losses in the VSC valve in the idling operating state BS EN 62751-1:2014IEC 62751-1:2014 IEC 2014 9 3.3.6 operating losses losses in the VSC valve in the operating state 3.4 Device characteristics 3.4.1 IGBT collector-emitter saturation voltage VCE(sat)collector-emi
copyright@ 2008-2019 麦多课文库（www.mydoc123.com）网站版权所有
备案/许可证编号：苏ICP备17064731号-1