BS IEC 60747-14-5-2010 Semiconductor devices - Semiconductor sensors - PN-junction semiconductor temperature sensor《半导体器件 半导体传感器 PN-结点半导体温度传感器》.pdf

1、raising standards worldwideNO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAWBSI Standards PublicationSemiconductor devicesPart 14-5: Semiconductor sensors PN-junction semiconductor temperature sensorBS IEC 60747-14-5:2010National forewordThis British Standard is the UK implement

2、ation of IEC 60747-14-5:2010.The UK participation in its preparation was entrusted to Technical CommitteeEPL/47, Semiconductors.A list of organizations represented on this committee can be obtained onrequest to its secretary.This publication does not purport to include all the necessary provisions o

3、f acontract. Users are responsible for its correct application. BSI 2010ISBN 978 0 580 58809 9ICS 31.080.01Compliance with a British Standard cannot confer immunity fromlegal obligations.This British Standard was published under the authority of the StandardsPolicy and Strategy Committee on 30 April

4、 2010.Amendments issued since publicationAmd. No. Date Text affectedBRITISH STANDARDBS IEC 60747-14-5:2010IEC 60747-14-5Edition 1.0 2010-02INTERNATIONAL STANDARD NORME INTERNATIONALESemiconductor devices Part 14-5: Semiconductor sensors PN-junction semiconductor temperature sensor Dispositifs semico

5、nducteurs Partie 14-5: Capteurs semiconducteurs Capteur de temprature semiconducteurs jonction PN INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE RICS 31.080.01 PRICE CODECODE PRIXISBN 2-8318-1078-8 Registered trademark of the International Electrotechnical Commi

6、ssion Marque dpose de la Commission Electrotechnique Internationale BS IEC 60747-14-5:2010 2 60747-14-5 IEC:2010 CONTENTS FOREWORD.4 1 Scope.6 2 Normative references .6 3 Terms, definitions and symbols 6 3.1 Terms and definitions 6 3.2 Symbols 7 4 Essential ratings and characteristics.7 4.1 General

7、.7 4.2 Limiting values (absolute maximum rating system) 8 4.2.1 Electrical limiting values 8 4.2.2 Temperatures 8 4.3 Electrical characteristics8 5 Measuring methods 8 5.1 General .8 5.2 Circuit diagrams of PN-junction temperature sensors 8 5.3 Temperature sensitivity .10 5.3.1 Purpose.10 5.3.2 Circ

8、uit diagram 11 5.3.3 Principle of measurement 11 5.3.4 Measurement procedure11 5.3.5 Specified conditions 12 5.4 Bias supply operating current 12 5.4.1 Purpose.12 5.4.2 Circuit diagram 12 5.4.3 Measurement procedure12 5.4.4 Specified conditions 12 5.5 Output voltage.12 5.5.1 Purpose.12 5.5.2 Circuit

9、 diagram 13 5.5.3 Measurement procedure13 5.5.4 Specified conditions 13 5.6 Nonlinearity.13 5.6.1 Purpose.13 5.6.2 Circuit diagram 13 5.6.3 Principle of measurement 13 5.6.4 Measurement procedure14 5.6.5 Specified conditions 14 5.7 Line regulation 14 5.7.1 Purpose.14 5.7.2 Circuit diagram 14 5.7.3 P

10、rinciple of measurement 14 5.7.4 Measurement procedure15 5.7.5 Specified conditions 15 5.8 Load regulation .15 5.8.1 Purpose.15 5.8.2 Circuit diagram 15 BS IEC 60747-14-5:201060747-14-5 IEC:2010 3 5.8.3 Principle of measurement 15 5.8.4 Measurement procedure16 5.8.5 Specified conditions 16 5.9 Relia

11、bility test16 5.9.1 Steady-state life 16 5.9.2 Temperature humidity life 16 Annex A (informative) Features of a semiconductor temperature sensor .17 Bibliography18 Figure 1 The circuit diagram of a PN-junction temperature sensor with a negative temperature coefficient .9 Figure 2 The circuit diagram

12、 of a PN-junction temperature sensor with a positive temperature coefficient .10 Figure 3 Circuit diagram for the measurement of the temperature sensitivity11 Figure 4 Circuit diagram for the measurement of the temperature sensitivity11 Figure 5 Circuit diagram for the measurement of the bias supply

13、 operating current12 Figure 6 Measurement principle of the nonlinearity 13 Figure 7 Circuit diagram for the measurement of the line regulation.14 Table 1 Electrical limiting values8 Table 2 Parameters electrical characteristics .8 Table A.1 Features of some examples of semiconductor temperature sens

14、ors.17 BS IEC 60747-14-5:2010 4 60747-14-5 IEC:2010 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES Part 14-5: Semiconductor sensors PN-junction semiconductor temperature sensor FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standard

15、ization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes Intern

16、ational Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate

17、in this preparatory work. International, governmental and non-governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between th

18、e two organizations. 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international consensus of opinion on the relevant subjects since each technical committee has representation from all interested IEC National Committees. 3) IEC Publications hav

19、e the form of recommendations for international use and are accepted by IEC National Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any misi

20、nterpretation by any end user. 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications transparently to the maximum extent possible in their national and regional publications. Any divergence between any IEC Publication and the corresponding natio

21、nal or regional publication shall be clearly indicated in the latter. 5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any services c

22、arried out by independent certification bodies. 6) All users should ensure that they have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and members of its technical committees and IEC National

23、Committees for any personal injury, property damage or other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications. 8) Attention is dra

24、wn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not

25、 be held responsible for identifying any or all such patent rights. International Standard IEC 60747-14-5 has been prepared by subcommittee 47E: Discrete semiconductor devices, of IEC technical committee 47: Semiconductor devices. The text of this standard is based on the following documents: FDIS R

26、eport on voting 47E/390/FDIS 47E/392/RVDFull information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. A list of all the parts in the IEC 60747 se

27、ries, under the general title Semiconductor devices Discrete devices, can be found on the IEC website. BS IEC 60747-14-5:201060747-14-5 IEC:2010 5 The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC web site under “http:

28、/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. BS IEC 60747-14-5:2010 6 60747-14-5 IEC:2010 SEMICONDUCTOR DEVICES Part 14-5: Semiconductor sensors PN-junction semiconductor te

29、mperature sensor 1 Scope This standard is applicable to semiconductor PN-junction temperature sensors and defines terms, definitions, symbols, essential ratings, characteristics and test methods that can be used to determine the characteristics of semiconductor types of PN-junction temperature senso

30、rs. 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60747-14-1, Semico

31、nductor devices Part 14-1: Semiconductor sensors General and classification IEC 60749-5, Semiconductor devices Mechanical and climatic test methods Part 5: Steady-state temperature humidity bias life test IEC 60749-6, Semiconductor devices Mechanical and climatic test methods Part 6: Storage at high

32、 temperature 3 Terms, definitions and symbols 3.1 Terms and definitions For the purpose of this document, the following terms and definitions apply. For the general terms and definitions, refer to IEC 60747-14-1. 3.1.1 voltage output style output style of the temperature sensor where output change i

33、s expressed by voltage change 3.1.2 current output style output style of the temperature sensor where output change is expressed by current change 3.1.3 supply voltage range voltage range where the sensor operates normally 3.1.4 operating temperature range temperature range where the sensor operates

34、 normally BS IEC 60747-14-5:201060747-14-5 IEC:2010 7 3.1.5 line regulation ratio of output voltage change to supply voltage change NOTE The unit mV/V is usually used in the line regulation. 3.1.6 load regulation ratio of output voltage change to output current change NOTE The unit mV/mA is usually

35、used in the load regulation. 3.2 Symbols S sensitivity Voutfull scale of output voltage change F full scale of temperature change H hysteresis Hmaxmaximum difference between two outputs by the increasing input and decreasing input Rx resistors Qx transistors Rmaxmaximum difference between or among o

36、utputs I1current at emitter of transistor Q1I2current at emitter of transistor Q2VBE1voltage between base and emitter of transistor Q1VBE2voltage between base and emitter of transistor Q2VTequals qkTk Boltzmann constant T absolute temperature q electron charge Sjjunction area VFjunction voltage IFfo

37、rward current Naacceptor density Nddonor density Dphole diffusion constant Dnelectron diffusion constant Lphole diffusion distance Lnelectron diffusion distance niintrinsic carrier density 4 Essential ratings and characteristics 4.1 General This clause gives ratings and characteristics required for

38、specifying PN-junction temperature sensors. BS IEC 60747-14-5:2010 8 60747-14-5 IEC:2010 4.2 Limiting values (absolute maximum rating system) 4.2.1 Electrical limiting values Limiting values shall be specified as in Table 1. Table 1 Electrical limiting values Subclause Parameters Min. Max. 4.2.1.1 B

39、ias supply voltage + 4.2.1.2 Output terminal voltage + 4.2.2 Temperatures Operating temperature Storage temperature 4.3 Electrical characteristics The characteristics shall apply over the full operating temperature range, unless otherwise specified. The parameters shall be specified as in Table 2. T

40、able 2 Parameters electrical characteristics Subclause Parameters Min. Typical Max. 4.3.1 Temperature sensitivity + + + 4.3.2 Bias supply operating current + + 4.3.3 Output voltage + + + 4.3.4 Nonlinearity + 4.3.5 Line regulation + 4.3.6 Load regulation + 5 Measuring methods 5.1 General This clause

41、prescribes measuring methods for electrical characteristics of PN-junction temperature sensors. 5.2 Circuit diagrams of PN-junction temperature sensors Circuit diagrams of PN-junction temperature sensors are shown as follows. Figure 1 is a typical circuit diagrams of a PN-junction temperature sensor

42、 with a negative temperature coefficient. BS IEC 60747-14-5:201060747-14-5 IEC:2010 9 IFVF3VoutQ3IFIFQ2Q1VF2VF1IEC 101/10 Figure 1 The circuit diagram of a PN-junction temperature sensor with a negative temperature coefficient +=kTqVnNLDNLDSIF2ianndppjqFexp (1) Figure 2 shows typical circuit diagram

43、s of a PN-junction temperature sensor with a positive temperature coefficient. BS IEC 60747-14-5:2010 10 60747-14-5 IEC:2010 I Q1I IPTATVF2VF1R1R22I VFxMQ2x1VoutIEC 102/10 M emitter size ratio of Q1and Q2Figure 2 The circuit diagram of a PN-junction temperature sensor with a positive temperature coe

44、fficient 2FF1FVVV = )ln(MqkT= (2) 1FPTATRVI= (3) F1F12out1 VVRRV += F112)ln(1 VMqkTRR+= (4) 5.3 Temperature sensitivity 5.3.1 Purpose To measure the temperature sensitivity under specified conditions. BS IEC 60747-14-5:201060747-14-5 IEC:2010 11 5.3.2 Circuit diagram VSS VDDVOUT PNJ temp sensor V1V2

45、IEC 103/10 Figure 3 Circuit diagram for the measurement of the temperature sensitivity 5.3.3 Principle of measurement Temperature sensitivity SEis derived from the output voltages at low measuring temperature TLand high measuring temperature THas follows: LHoutLoutHSETTVV= (5) where VoutHis the outp

46、ut voltage at high measuring temperature TH; VoutLis the output voltage at low measuring temperature TL; SEis expressed with the unit mV/C. See Figure 4. Output voltage （Vout） VoutL（Ta= TL） Temperature Ta(C) SEVoutH（Ta= TH）THTL0 IEC 104/10 Figure 4 Circuit diagram for the measurement of the temperat

47、ure sensitivity 5.3.4 Measurement procedure The supply voltage shall be applied as specified. BS IEC 60747-14-5:2010 12 60747-14-5 IEC:2010 Ambient or reference-point temperature of the sensor shall be set at the specified low measuring temperature. The output voltage at low measuring temperature, V

48、outL, is measured using voltmeter V2. The ambient or reference-point temperature of the sensor shall be set at the specified high measuring temperature. The output voltage at high measuring temperature, VoutH, is measured using voltmeter V2. The temperature sensitivity is calculated from Equation (5

49、). 5.3.5 Specified conditions Supply voltage Low measuring temperature High measuring temperature 5.4 Bias supply operating current 5.4.1 Purpose To measure the bias supply operating current under specified conditions. 5.4.2 Circuit diagram VSSVDDVA VOUT PNJ temp sensor IEC 105/10 Figure 5 Circuit diagram for the measurement of the bias supply operating