BS IEC 60747-5-4-2006 Semiconductor devices - Discrete devices - Optoelectronic devices - Semiconductor lasers《半导体器件 分立器件 光电器件 半导体激光器》.pdf

1、 g49g50g3g38g50g51g60g44g49g42g3g58g44g55g43g50g56g55g3g37g54g44g3g51g40g53g48g44g54g54g44g50g49g3g40g59g38g40g51g55g3g36g54g3g51g40g53g48g44g55g55g40g39g3g37g60g3g38g50g51g60g53g44g42g43g55g3g47g36g58Part 5-4: Optoelectronic devices Semiconductor lasersICS 31.080.01; 31.260Semiconductor devices Dis

2、crete devices BRITISH STANDARDBS IEC 60747-5-4:2006BS IEC 60747-5-4:2006This British Standard was published under the authority of the Standards Policy and Strategy Committee on 30 June 2006 BSI 2006ISBN 0 580 48819 5The British Standards which implement international publications referred to in thi

3、s document may be found in the BSI Catalogue under the section entitled “International Standards Correspondence Index”, or by using the “Search” facility of the BSI Electronic Catalogue or of British Standards Online.This publication does not purport to include all the necessary provisions of a cont

4、ract. Users are responsible for its correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations.Summary of pagesThis document comprises a front cover, an inside front cover, the IEC title page, pages 2 to 28, an inside back cover and a back cover

5、The BSI copyright notice displayed in this document indicates when the document was last issued.Amendments issued since publicationAmd. No. Date CommentsA list of organizations represented on this committee can be obtained on request to its secretary.Cross-referencesenquiries on the interpretation,

6、 or proposals for change, and keep UK interests informed; monitor related international and European developments and promulgate them in the UK.National forewordThis British Standard reproduces verbatim IEC 60747-5-4:2006 and implements it as the UK national standard.The UK participation in its prep

7、aration was entrusted to Technical Committee EPL/47, Semiconductors, which has the responsibility to: aid enquirers to understand the text; present to the responsible international/European committee any CEIIECINTERNATIONAL STANDARD 60747-5-4First edition2006-02Semiconductor devices Discrete devices

8、 Part 5-4: Optoelectronic devices Semiconductor lasers Reference number CEI/IEC 60747-5-4:2006 BS IEC 60747-5-4:2006CONTENTS 1 Scope 14H3 2 Normative references. 15H3 3 General . 4 3.1 Physical concepts. 4 3.3 General terms. 4 3.4 Terms related to ratings and characteristics 5 4 Essential rating and

9、 characteristics 9 4.1 Type. 9 4.2 Semiconductor . 9 4.3 Details of outline drawing and encapsulation . 9 4.4 Limiting values (absolute maximum ratings) 10 4.5 Electrical and optical characteristics . 10 4.6 Supplementary information Temperature dependence of wavelength 125.1 Power measurement. 12 5

10、2 Output power stability . 12 5.3 Time domain profile 14 5.4 Lifetime 17 5.5 Optical characteristics of the laser beam. 18 Annex A (informative) Reference list of technical terms and definitions related to spatial profile and spectral characteristics 22 Annex B (informative) Reference list of measu

11、rement methods related to spatial profile and spectral characteristics 26 Annex C (informative) Reference list of technical terms and definitions, and measurement methods, related to power measurement and lifetime . 27 Bibliography. 28 0HFigure 1 Device with window but without lens 5 1HFigure 2 Swit

12、ching times . 6 2HFigure 3a Derivative threshold current of a laser diode 7 3HFigure 3b Extrapolated threshold current of a laser diode 8 4HFigure 4 Basic circuit diagram . 12 5HFigure 5 Basic circuits diagram . 14 6HFigure 6 Typical pulse response diagram 16 7HFigure 7 Basic circuit diagram . 17 8H

13、Figure 8 Half-intensity angle 18 9HFigure 9 Relationship between the specified plane and the mechanical reference plane. 19 10HFigure 10 Basic measurement setup diagram 19 11HFigure 11. 20 12HTable 1 Electrical and optical chracteristics. 10 BS IEC 60747-5-4:2006 2 5 Measurement methods . 12 SEMICON

14、DUCTOR DEVICES DISCRETE DEVICES Part 5-4: Optoelectronic devices Semiconductor laser 1 Scope This part of IEC 60747 deals with the terminology, the essential ratings and characteristics as well as the measuring methods of semiconductor lasers. 2 Normative references The following referenced document

15、s are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references the latest edition of the reference document (including any amendments) applies. IEC 62007-1, Semiconductor optoelectric devices for fibre optic system applications

16、Part 1: Essential ratings and characteristics IEC 62007-2, Semiconductor optoelectric devices for fibre optic system applications Part 2: Measuring methods ISO 11145, Optics and optical instruments Lasers and laser related equipment Vocabulary and symbols ISO 11146-1, Lasers and laser-related equipm

17、ent Test methods for laser beam widths, divergence angles and beam propagation ratios Part 1: Stigmatic and simple astigmatic beams ISO 11146-2, Lasers and laser-related equipment Test methods for laser beam widths, divergence angles and beam propagation ratios Part 2: General astigmatic beams ISO 1

18、1146-3, Lasers and laser-related equipment Test methods for laser beam widths, divergence angles and beam propagation ratios Part 3: Intrinsic and geometrical laser beam classification, propagation and details of test methods ISO 11554, Optics and optical instruments Lasers and laser-related equipme

19、nt Test methods for laser beam power, energy and temporal characteristics ISO 11670, Lasers and laser-related equipment Test methods for laser beam parameters -Beam positional stability ISO 12005, Lasers and laser-related equipment Test methods for laser beam parameters Polarization ISO 13694, Optic

20、s and optical instruments Lasers and laser-related equipment Test methods for laser beam power (energy) density distribution ISO 13695, Optics and photonics Laser and laser-related equipment Test methods for the spectral characteristics of lasers ISO 17526, Optics and optical instruments Lasers and

21、laser related equipment Lifetime of lasers BS IEC 60747-5-4:2006 3 3 Terms and definitions For the purpose of this document, the following terms and definitions apply. 3.1 Physical concepts a) (Electromagnetic) radiation (IEV 845-01-01) b) Optical radiation (see IEV 845-01-02) c) Visible radiation (

22、IEV 845-01-03) NOTE There are no precise limits for the spectral range of visible radiation since they depend upon the amount of output power available and the responsivity of the observer. The lower limit is generally taken between 360 nm and 400 nm and the upper limit between 760 nm and 830 nm. d)

23、 Infrared radiation (see IEV 845-01-04, specialized) e) Ultraviolet radiation (see IEV 845-01-05, specialized) f) Light (IEV 845-01-06, without Note 2 which is not relevant) Perceived light (IEV 845-02-17) Visible radiation (IEV 845-01-03) 3.2 Types of devices Semiconductor laser (laser diode) Semic

24、onductor diode that emits coherent optical radiation through stimulated emission resulting from the recombination of free electrons and holes when an electric current exceeds the threshold current of the diode. NOTE The laser diode chip is mounted on a submount or in a package with or without coupli

25、ng means (e.g. lens, fibre pigtail). 3.3 General terms 3.3.1 beam axis (see ISO 11145) 3.3.2 optical port geometrical configuration, referenced to an external plane or surface of the device, that is used to specify the optical radiation emitted from an emitting device. NOTE The geometrical configura

26、tion should be specified by the manufacturer by means of geometrical information, e.g: location, shape and size of the area of emission, angle of emission or acceptance, other parameters, e.g. numerical aperture of optical fibre, orientation of beam axis. Example: Signification of annotations in the

27、 figure: = acceptance angle or emission angle D = optical port with diameter D Ref. = reference locus for the definition of the optical port BS IEC 60747-5-4:2006 4 Packaged devices y z xD Package outlineRef.: Package outline IEC 203/06 Figure 1 Device with window but without lens 3.4 Terms related

28、to ratings and characteristics 3.4.1 switching times NOTE The specified lower and upper limit values referred to in 3.4.1.1 to 3.4.1.6 are usually 10 % and 90 % of the amplitude of the pulses (see Figure 3). 3.4.1.1 rise time tr (see ISO 11554) 3.4.1.2 fall time tf (see ISO 11554) NOTE In the most r

29、ecent edition of ISO 11554, there is no definition regarding fall time. For the time being, the descriptions of Figure 2 should be referred to until the complete version of fall time definition is fixed in ISO 11554. 3.4.1.3 turn-on delay time td(on)time interval between the instant the electrical i

30、nput signal reaches a specified level (10 % unless otherwise stated) and the instant the optical output signal reaches a specifies level (10 % of the steady-state maximum unless otherwise stated) 3.4.1.4 turn-on time ton time interval between the instant the electrical input signal reaches a specifi

31、ed level (10 % unless otherwise stated) and the instant the optical output signal reaches a specified level (90 % of the steady-state maximum unless otherwise stated) ton= td(on)+ trBS IEC 60747-5-4:2006 5 3.4.1.5 turn-off delay time td(off)time interval between the instant the electrical input sign

32、al downs a specified level (90 % unless otherwise stated) and the instant the optical output signal downs a specifies level (90 % of the steady-state maximum unless otherwise stated) 3.4.1.6 turn-off time tofftime interval between the instant the electrical input signal downs a specified level (90 %

33、 unless otherwise stated) and the instant the optical output signal downs a specified level (10 % of the steady-state maximum unless otherwise stated). toff= td(off)+ tf 100 % Upper specified value Lower specified value td(on)Upper specified value Lower specified value Optical output signal waveform

34、 Electrical input signal waveform tontrtd(off) tftofft t 100 % IEC 204/06 NOTE Lower and upper specified values indicate 10 % and 90 %, respectively, unless other wise stated. Figure 2 Switching times BS IEC 60747-5-4:2006 6 3.4.2 output power P(see ISO 13694) 3.4.3 differential output (radiant) pow

35、er efficiency doutput power efficiency for small-signal modulation: d= dP / dIFNOTE 1 Dimension of dis W/A. NOTE 2 The term “small-signal modulation efficacy“ is used as a synonym. NOTE 3 Differential output power quantum efficiency = q/h edis also applicable, where q is the electron charge, is the

36、optical frequency, h is equal 6,62 x 10-34Js (Plancks constant). 3.4.4 threshold current (of a semiconductor laser) ITHforward current derived from one of the following two methods: a) Derivative threshold current ITH(D)The forward current at which the second derivative of the curve showing output p

37、ower P versus forward current IF has its first maximum (see Figure 3a). b) Extrapolated threshold current The forward current at which the extrapolated two straight lines of the stimulated emission and the spontaneous emission cross each other (see Figure 3b). P d2P dIF2d2PdIF2PITHIFIEC 205/06 Figur

38、e 3a Derivative threshold current of a laser diode BS IEC 60747-5-4:2006 7 P ITHIFIEC 206/06 Figure 3b Extrapolated threshold current of a laser diode Figure 3 Threshold current of a laser diode 3.4.5 noise characteristics (of a semiconductor laser) 3.4.5.1 relative intensity noise RIN (see ISO 1155

39、4) 3.4.5.2 carrier-to-noise ratio C/N The quotient of: the mean square radiant power at the specified frequency, to the mean square radiant power fluctuations normalized to a frequency band of unit width centered on the carrier frequency 3.4.6 small signal cut-off frequency fc(see ISO 11554) 3.4.7 o

40、ptical characteristics of the laser beam (see ISO 11146-1, ISO 11146-2, ISO 1146-3, ISO 11670, ISO 13694 and ISO 13695) 3.4.7.1 spatial profile (see ISO 11146-1, ISO 11146-2, ISO 11146-3, ISO 11670 and ISO 13694) 3.4.7.2 spectral characteristics (see ISO 13695) 3.4.8 half-intensity angle 1/2in a rad

41、iation diagram, the angle within which the radiant intensity is greater than or equal to half of the maximum intensity BS IEC 60747-5-4:2006 8 3.4.9 1/e2-intensity angle 1/e2in a radiation diagram, the angle within which the radiant intensity is greater than or equal to 1/e2of the maximum intensity

42、3.4.10 half-intensity width D1/2full width of a beam, within which the power density is greater than or equal to half of the maximum power density at a specified position z along the beam propagation direction 3.4.11 1/e2-intensity width D1/e2full width of a beam, within which the power density is g

43、reater than or equal to 1/e2of the maximum power density at a specified position z along the beam propagation direction4 Essential rating and characteristics NOTE Terms and requirements needed for essential ratings and characteristics are defined in IEC 60747-1. 4.1 Type Ambient-rated or case-rated

44、semiconductor lasers. 4.2 Semiconductor 4.2.1.1 Material Material such as GaAlAs, InGaAsP, InGaAlP, InGaAlN. 4.2.2 Structure 4.2.2.1 Epitaxial structure Structure such as (single or multi) quantum well, quantum dots, surface emitting. 4.2.2.2 Lateral structure Structure such as gain guiding, index g

45、uiding, distributed feed-back, broad area, phase-coupled array. 4.3 Details of outline drawing and encapsulation a) IEC and/or national reference number of the outline drawing. b) Method of encapsulation: glass/metal/plastic/other. c) Terminal identification and indication of any electrical connecti

46、on between a terminal and the case. d) Characteristics of the optical port: orientation relative to mechanical axes, position relative to mechanical axes, area, numerical aperture. NOTE Numerical aperture should be essential depend on application. BS IEC 60747-5-4:2006 9 4.4 Limiting values (absolut

47、e maximum ratings) Over the operating temperature range, unless otherwise stated. 4.4.1 Minimum and maximum storage temperatures (Tstg) 4.4.2 Minimum and maximum operating temperatures Ambient or case temperature (Tambor Tcase). Submount temperature, where appropriate (Tsub). 4.4.3 Maximum soldering

48、 temperature (soldering time and minimum distance to case) (Tsld) 4.4.4 Maximum reverse voltage (VRM) 4.4.5 One or more of the following at an ambient or case temperature of 25 C together with a derating curve or derating factor with temperature Maximum continuous forward current (IFM). Maximum cont

49、inuous output power (PM). Maximum pulsed forward current at stated frequency and pulse duration (IFM). Maximum pulsed output power at stated frequency and pulse duration (PM). 4.5 Electrical and optical characteristics Output power shall be specified as continuous or pulsed as appropriate to the device. IFindicates a forward current above the measured threshold current ITHof th