BS IEC 62396-1-2016 Process management for avionics Atmospheric radiation effects Accommodation of atmospheric radiation effects via single event effects within avionics electronic.pdf

1、BSI Standards PublicationProcess management for avionics Atmospheric radiation effectsPart 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipmentBS IEC 62396-1:2016National forewordThis British Standard is the UK implementation of IEC 62396-1:

2、2016.It supersedes BS IEC 62396-1:2012 which is withdrawn.The UK participation in its preparation was entrusted to TechnicalCommittee GEL/107, Process management for avionics.A list of organizations represented on this committee can be obtained onrequest to its secretary.This publication does not pu

3、rport to include all the necessary provisions ofa contract. Users are responsible for its correct application. The British Standards Institution 2016.Published by BSI Standards Limited 2016ISBN 978 0 580 90359 5ICS 03.100.50; 31.020; 49.060Compliance with a British Standard cannot confer immunity fr

4、omlegal obligations.This British Standard was published under the authority of the Standards Policy and Strategy Committee on 31 January 2016.Amendments/corrigenda issued since publicationDate Text affectedBRITISH STANDARDBS IEC 62396-1:2016IEC 62396-1 Edition 2.0 2016-01 INTERNATIONAL STANDARD Proc

5、ess management for avionics Atmospheric radiation effects Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment INTERNATIONAL ELECTROTECHNICAL COMMISSION ICS 03.100.50; 31.020; 49.060 ISBN 978-2-8322-3078-7 Registered trademark of the In

6、ternational Electrotechnical Commission Warning! Make sure that you obtained this publication from an authorized distributor. colourinsideBS IEC 62396-1:2016 2 IEC 62396-1:2016 IEC 2016 CONTENTS FOREWORD . 6 INTRODUCTION . 8 1 Scope 9 2 Normative references 9 3 Terms and definitions 9 4 Abbreviation

7、s and acronyms 18 5 Radiation environment of the atmosphere 21 5.1 Radiation generation . 21 5.2 Effect of secondary particles on avionics 21 5.3 Atmospheric neutrons . 21 5.3.1 General . 21 5.3.2 Atmospheric neutrons energy spectrum and SEE cross-sections . 22 5.3.3 Altitude variation of atmospheri

8、c neutrons . 24 5.3.4 Latitude variation of atmospheric neutrons . 25 5.3.5 Thermal neutrons within aircraft . 27 5.4 Secondary protons 27 5.5 Other particles 28 5.6 Solar enhancements . 29 5.7 High altitudes greater than 60 000 ft (18 290 m) . 29 6 Effects of atmospheric radiation on avionics 30 6.

9、1 Types of radiation effects 30 6.2 Single event effects (SEEs) 30 6.2.1 General . 30 6.2.2 Single event upset (SEU) . 31 6.2.3 Multiple bit upset (MBU) and multiple cell upset (MCU) 31 6.2.4 Single effect transients (SETs) 33 6.2.5 Single event latch-up (SEL) . 34 6.2.6 Single event functional inte

10、rrupt (SEFI) . 34 6.2.7 Single event burnout (SEB) . 34 6.2.8 Single event gate rupture (SEGR) 35 6.2.9 Single event induced hard error (SHE) . 35 6.2.10 SEE potential risks based on future technology . 35 6.3 Total ionising dose (TID) . 36 6.4 Displacement damage . 37 7 Guidance for system designs

11、. 37 7.1 Overview. 37 7.2 System design 40 7.3 Hardware considerations. 41 7.4 Electronic devices characterisation and control . 42 7.4.1 Rigour and discipline . 42 7.4.2 Level A systems 42 7.4.3 Level B 42 7.4.4 Level C 43 7.4.5 Levels D and E 43 8 Determination of avionics single event effects rat

12、es . 43 BS IEC 62396-1:2016IEC 62396-1:2016 IEC 2016 3 8.1 Main single event effects 43 8.2 Single event effects with lower event rates 44 8.2.1 Single event burnout (SEB) and single event gate rupture (SEGR) 44 8.2.2 Single event transient (SET) 44 8.2.3 Single event hard error (SHE) 45 8.2.4 Singl

13、e event latch-up (SEL) . 45 8.3 Single event effects with higher event rates Single event upset data 45 8.3.1 General . 45 8.3.2 SEU cross-section . 46 8.3.3 Proton and neutron beams for measuring SEU cross-sections . 46 8.3.4 SEU per bit cross-section trends in SRAMs . 50 8.3.5 SEU per bit cross-se

14、ction trends and other SEE in DRAMs 51 8.4 Calculating SEE rates in avionics 53 8.5 Calculation of availability of full redundancy 54 8.5.1 General . 54 8.5.2 SEU with mitigation and SET . 54 8.5.3 Firm errors and faults 55 9 Considerations for SEE compliance . 55 9.1 Compliance . 55 9.2 Confirm the

15、 radiation environment for the avionics application 55 9.3 Identify the system development assurance level 55 9.4 Assess preliminary electronic equipment design for SEE 55 9.4.1 Identify SEE-sensitive electronic components 55 9.4.2 Quantify SEE rates 55 9.5 Verify that the system development assuran

16、ce level requirements are met for SEE . 55 9.5.1 Combine SEE rates for the entire system . 55 9.5.2 Management of electronic components control and dependability 56 9.6 Corrective actions . 56 Annex A (informative) Thermal neutron assessment 57 Annex B (informative) Methods for calculating SEE rates

17、 in avionics electronics 58 B.1 Proposed in-the-loop system test Irradiating avionics LRU in neutron/proton beam, with output fed into aircraft simulation computer . 58 B.2 Irradiating avionics LRU in a neutron/proton beam 58 B.3 Utilising existing SEE data for specific electronic components on LRU

18、59 B.3.1 Neutron proton data . 59 B.3.2 Heavy ion data 60 B.4 Applying generic SEE data to all electronic components on LRU . 61 B.5 Component level laser simulation of single event effects . 62 B.6 Determination of SEU rate from service monitoring . 63 Annex C (informative) Review of test facility

19、availability . 65 C.1 Facilities in the USA and Canada 65 C.1.1 Neutron facilities 65 C.1.2 Proton facilities 66 C.1.3 Laser facilities . 68 C.2 Facilities in Europe . 69 C.2.1 Neutron facilities 69 C.2.2 Proton facilities 71 C.2.3 Laser facilities . 72 BS IEC 62396-1:2016 4 IEC 62396-1:2016 IEC 201

20、6 Annex D (informative) Tabular description of variation of atmospheric neutron flux with altitude and latitude . 73 Annex E (informative) Consideration of effects at higher altitudes 75 Annex F (informative) Prediction of SEE rates for ions . 80 Annex G (informative) Late news as of 2014 on SEE cro

21、ss-sections applicable to the atmospheric neutron environment . 83 G.1 SEE cross-sections key to SEE rate calculations 83 G.2 Limitations in compiling SEE cross-section data 83 G.3 Cross-section measurements (figures with data from public literature) 84 G.4 Conservative estimates of SEE cross-sectio

22、n data 84 G.4.1 General . 84 G.4.2 Single event upset (SEU) . 85 G.4.3 Multiple cell upset (MCU) . 87 G.4.4 Single event functional interrupt (SEFI) . 88 G.4.5 Single event latch-up (SEL) . 89 G.4.6 Single event transient (SET) 91 G.4.7 Single event burnout (SEB) . 92 Annex H (informative) Calculati

23、ng SEE rates from non-white (non-atmospheric like) neutron cross-sections for small geometry electronic components 94 H.1 Energy thresholds . 94 H.2 Nominal neutron fluxes . 94 H.3 Calculating event rates using non-atmospheric like cross-sections for small geometry electronic devices 95 Bibliography

24、 96 Figure 1 Energy spectrum of atmospheric neutrons at 40 000 ft (12 160 m), latitude 45 22 Figure 2 Model of the atmospheric neutron flux variation with altitude (see Annex D) 25 Figure 3 Distribution of vertical rigidity cut-offs around the world 26 Figure 4 Model of atmospheric neutron flux vari

25、ation with latitude 26 Figure 5 Energy spectrum of protons within the atmosphere 28 Figure 6 System safety assessment process 38 Figure 7 SEE in relation to system and LRU effect . 40 Figure 8 Variation of RAM SEU cross-section as function of neutron/proton energy . 48 Figure 9 Neutron and proton SE

26、U bit cross-section data 49 Figure 10 SEU cross-section in SRAMs as function of the manufacture date 51 Figure 11 SEU cross-section in DRAMs as function of manufacture date . 52 Figure E.1 Integral linear energy transfer spectra in silicon at 100 000 ft (30 480 m) for cut-off rigidities (R) from 0 G

27、V to 17 GV . 76 Figure E.2 Integral linear energy transfer spectra in silicon at 75 000 ft (22 860 m) for cut-off rigidities (R) from 0 to 17 GV 76 Figure E.3 Integral linear energy transfer spectra in silicon at 55 000 ft (16 760 m) for cut-off rigidities (R) from 0 GV to 17 GV 77 Figure E.4 Influe

28、nce of solar modulation on integral linear energy transfer spectra in silicon at 150 000 ft (45 720 m) for cut-off rigidities (R) of 0 GV and 8 GV . 77 Figure E.5 Influence of solar modulation on integral linear energy transfer spectra in silicon at 55 000 ft (16 760 m) for cut-off rigidities (R) of

29、 0 GV and 8 GV . 78 BS IEC 62396-1:2016IEC 62396-1:2016 IEC 2016 5 Figure E.6 Calculated contributions from neutrons, protons and heavy ions to the SEU rates of the Hitachi-A 4 Mbit SRAM as a function of altitude at a cut-off rigidity (R) of 0 GV . 79 Figure E.7 Calculated contributions from neutron

30、s, protons and heavy ions to the SEU rates of the Hitachi-A 4 Mbit SRAM as a function of altitude at a cut-off rigidity (R) of 8 GV 79 Figure F.1 Example differential LET spectrum 81 Figure F.2 Example integral chord length distribution for isotropic particle environment 81 Figure G.1 Variation of t

31、he high energy neutron SEU cross-section per bit as a function of electronic device feature size for SRAMs and SRAM arrays in microprocessors and FPGAs . 85 Figure G.2 Variation of the high energy neutron SEU cross-section per bit as a function of electronic device feature size for DRAMs . 86 Figure

32、 G.3 Variation of the high energy neutron SEU cross-section per electronic device as a function of electronic device feature size for NOR and NAND type flash memories 87 Figure G.4 Variation of the MCU/SBU percentage as a function of feature size based on data from many researchers in SRAMs 43, 45 8

33、8 Figure G.5 Variation of the high energy neutron SEFI cross-section in DRAMs as a function of electronic device feature size 89 Figure G.6 Variation of the high energy neutron SEFI cross-section in microprocessors and FPGAs as a function of electronic device feature size 90 Figure G.7 Variation of

34、the high energy neutron single event latch-up (SEL) cross-section in CMOS devices (SRAMs, processors) as a function of electronic device feature size . 91 Figure G.8 Single event burnout (SEB) cross-section in power electronic devices (400 V to 1 200 V) as a function of drain-source voltage (VDS) .

35、92 Table 1 Nomenclature cross reference . 39 Table B.1 Sources of high energy proton or neutron SEU cross-section data . 60 Table B.2 Some models for the use of heavy ion SEE data to calculate proton SEE data 61 Table D.1 Variation of 1 MeV to 10 MeV neutron flux in the atmosphere with altitude 73 T

36、able D.2 Variation of 1 MeV to 10 MeV neutron flux in the atmosphere with latitude 74 Table G.1 Information relevant to neutron-induced SET . 92 Table H.1 Approximate SEU energy thresholds for SRAM-based devices. 94 Table H.2 Neutron fluxes above different energy thresholds (40 000 ft, latitude 45)

37、. 94 BS IEC 62396-1:2016 6 IEC 62396-1:2016 IEC 2016 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ PROCESS MANAGEMENT FOR AVIONICS ATMOSPHERIC RADIATION EFFECTS Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment FOREWORD 1) The Internat

38、ional Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electron

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48、ments of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 62396-1 has been prepared by IEC technical committee 107: Process management for avionics. This second edition cancels and re

49、places the first edition published in 2012. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition: a) removed, in Clause 7 related to system design, reference to level A Type I and Type II (system and references). As Clause 7 is now for guidance, ”shall” statements have been changed to “should” and in 9.5.2 the requirement for electronic component managemen