BS IEC 62615-2011 Electrostatic discharge sensitivity testing Transmission line pulse (TLP) Component level《静电放电敏感性试验 传输线脉冲(TLP) 部件等级》.pdf

1、raising standards worldwideNO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAWBSI Standards PublicationElectrostatic discharge sensitivity testing Transmission line pulse (TLP) Component levelBS IEC 62615:2010National forewordThis British Standard is the UK implementation of IEC 6

2、2615:2010.The UK participation in its preparation was entrusted to Technical CommitteeEPL/47, Semiconductors.A list of organizations represented on this committee can be obtained on request to its secretary.This publication does not purport to include all the necessary provisions of a contract. User

3、s are responsible for its correct application. BSI 2011ISBN 978 0 580 65874 7 ICS 17.220.99; 31.080 Compliance with a British Standard cannot confer immunity from legal obligations.This British Standard was published under the authority of the Standards Policy and Strategy Committee on 31 July 2011.

4、Amendments issued since publicationAmd. No. Date Text affectedBRITISH STANDARDBS IEC 62615:2010IEC 62615Edition 1.0 2010-05INTERNATIONAL STANDARD NORME INTERNATIONALEElectrostatic discharge sensitivity testing Transmission line pulse (TLP) Component level Essai de sensibilit aux dcharges lectrostati

5、ques Impulsion de ligne de transmission (TLP) Niveau composant INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE RICS 17.220.99; 31.080 PRICE CODECODE PRIXISBN 978-2-88910-976-0 Registered trademark of the International Electrotechnical Commission Marque dpose de l

6、a Commission Electrotechnique Internationale BS IEC 62615:2010 2 62615 IEC:2010 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ ELECTROSTATIC DISCHARGE SENSITIVITY TESTING TRANSMISSION LINE PULSE (TLP) COMPONENT LEVEL FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organiz

7、ation for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IE

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11、C Publications have the form of recommendations for international use and are accepted by IEC National Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, IEC cannot be held responsible for the way in which they are us

12、ed or for any misinterpretation by any end user. 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications transparently to the maximum extent possible in their national and regional publications. Any divergence between any IEC Publication and the c

13、orresponding national or regional publication shall be clearly indicated in the latter. 5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible

14、for any services carried out by independent certification bodies. 6) All users should ensure that they have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and members of its technical committees

15、 and IEC National Committees for any personal injury, property damage or other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications. 8

16、) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rig

17、hts. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 62615 has been prepared by IEC technical committee 47: Semiconductor devices. This first edition is based on an ANSI/ESDA document ANSI/ESD STM5.5.1-2008. The text of this standard is bas

18、ed on the following documents: FDIS Report on voting 47/2046/FDIS 47/2056/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. BS IE

19、C 62615:201062615 IEC:2010 3 The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed,

20、withdrawn, replaced by a revised edition, or amended. BS IEC 62615:2010 4 62615 IEC:2010 INTRODUCTION Interest in TLP testing is growing rapidly in the testing of electronic components in the semiconductor industry. TLP testing techniques are being used for semiconductor process development, device

21、and circuit design. This technique or practice is being utilized on products in both wafer level and packaged environments. TLP testing is used as an electrostatic discharge (ESD) characterization tool to obtain voltage-current pulse characterization parameters, failure levels, and ESD metrics. The

22、TLP technique is being used today as a standard measurement for ESD devices. The TLP system to the ESD engineer is becoming a tool as critical as the parameter analyzer is to the semiconductor engineer. The majority of TLP systems are designed by engineers in a laboratory environment. A number of co

23、mmercial TLP systems have been marketed in the industry. Hence it is clear a TLP specification was needed for the TLP vendors, semiconductor industry and product customers to be able to make valid data comparisons. With the usage of TLP data for ESD characterization, technology benchmarking, and pro

24、duct quality evaluation, there is a growing need to have standard methodologies, failure criteria, and means of reporting to allow dialogue between semiconductor suppliers, vendors, and product customers. This document defines the standard test method used today in the semiconductor industry for TLP

25、 testing method and techniques in both industrial and academic institutions (this document is intended to be used by electrical technicians, electrical engineers, semiconductor process and device engineers, ESD reliability and quality engineers, and circuit designers). The context of this document i

26、s the application of TLP techniques for the electrical characterization of semiconductor components. These semiconductor components can be single devices, a plurality of devices, integrated circuits, or semiconductor chips. This methodology is relevant to both active and passive elements. This test

27、method is applicable to diodes, MOSFET devices, bipolar transistors, resistors, capacitors, inductors, contacts, vias, wire interconnects, and related components. BS IEC 62615:201062615 IEC:2010 5 ELECTROSTATIC DISCHARGE SENSITIVITY TESTING TRANSMISSION LINE PULSE (TLP) COMPONENT LEVEL 1 Scope and o

28、bject This International Standard defines a method for pulse testing to evaluate the voltage current response of the component under test and to consider protection design parameters for electro-static discharge (ESD) human body model (HBM). This technique is known as transmission line pulse (TLP) t

29、esting. This document establishes a methodology for both testing and reporting information associated with transmission line pulse (TLP) testing. The scope and focus of this document pertains to TLP testing techniques of semiconductor components. This document should not become alternative method of

30、 HBM test standard such as IEC 60749-26. The purpose of the document is to establish guidelines of TLP methods that allow the extraction of HBM ESD parameters on semiconductor devices. This document provides the standard measurement and procedure for the correct extraction of HBM ESD parameters by u

31、sing TLP. 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60749-26: Se

32、miconductor devices Mechanical and climatic test methods Part 26: Electrostatic discharge (ESD) sensitivity testing Human body model (HBM) IEC 60749-27, Semiconductor devices Mechanical and climatic test methods Part 27: Electrostatic discharge (ESD) sensitivity testing Machine model (MM) IEC 60749-

33、28, Semiconductor devices Mechanical and climatic test methods Part 28: Electrostatic discharge (ESD) sensitivity testing Direct contact charged device model (DC-CDM)13 Terms and definitions For the purposes of this document, the following terms and definitions apply. 3.1 current source method TLP m

34、ethodology (sometimes referred to as constant current method) that utilizes a 500 resistor in series with the DUT and measures the voltage and current at the DUT 3.2 destructive damage damage where the operating electrical characteristics or parameters are altered and do not recover to the initial c

35、onditions prior to stress _ 1Under consideration. BS IEC 62615:2010 6 62615 IEC:2010 3.3 safe operation area (SOA) current and voltage regime where a device is in normal operation without degradation 3.4 second breakdown condition where a negative resistance state occurs in a device due to thermal p

36、rocesses NOTE This is designated as the voltage trigger point Vt2and current It2. and is typically observed after electrical breakdown (e.g., Vt1, It1) 3.5 thermal instability condition whereby a device is in a negative resistance regime due to thermal processes 3.6 time domain reflectometer method

37、(TDR) TLP methodology that uses an oscilloscope to measure both the incident and the reflected waves from the device under test (DUT) 3.7 time domain transmission method (TDT) TLP methodology that uses an oscilloscope to measure the transmitted wave after application to the device under test (DUT) 3

38、.8 time domain transmission and reflection method (TDRT) TLP methodology that incorporates both the transmitted and reflected waves 3.9 transmission line pulse (TLP) a rectangular current pulse formed by discharging a charged transmission line cable. NOTE In this document, TLP refers to any rectangu

39、lar pulse formed from any pulse source 3.10 transmission line pulse test system a test system that applies a rectangular pulse to a device under test and allows measurement of device electrical characteristics during a pulsed state NOTE The system typically measures current and voltage across the de

40、vice, as well as leakage current after TLP pulse application 4 Test apparatus 4.1 General Transmission line pulse (TLP) systems vary in their use of equipment, configurations, and methodology to extract the current and voltage characteristics of a device. TLP design and system configuration is conta

41、ined in Annex A. All equipment within the test system shall be able to withstand the maximum current for the largest pulse width applied. Additionally, all equipment shall withstand the maximum voltage from the initial charge voltage (including the reflected voltage) observed in the test system. Cur

42、rent and voltage probes shall not saturate and/or fail during TLP testing. BS IEC 62615:201062615 IEC:2010 7 4.2 Oscilloscope Oscilloscope requirements: a) minimum single shot bandwidth of at least 500 MHz 4.3 Voltage probe Voltage probe requirements: a) a minimum bandwidth of 200 MHz. b) shall be a

43、ble to withstand a maximum voltage of twice the open-circuit maximum voltage (e.g. twice the pre-charge voltage) without electrical damage 4.4 Current probe Current probe requirements: a) a minimum bandwidth of 1 GHz. b) shall not saturate under TLP test maximum current and/or maximum pulse width 4.

44、5 Transmission line Transmission line requirements: a) shall be able to withstand the maximum current for the largest TLP test pulse width without electrical damage. b) shall be able to withstand the maximum TLP test voltage observed (combined initial charge voltage and reflected voltage) without el

45、ectrical damage. 4.6 High voltage power supply High voltage power supply requirements: a) shall be able to source TLP test voltage levels required to evaluate the DUT. b) shall be able to withstand the maximum TLP test voltage observed (combined initial charge voltage and reflected voltage) without

46、electrical damage. 4.7 High voltage switch High voltage switch requirements: a) shall be able to withstand maximum current for the largest TLP test pulse width without electrical damage. b) shall be able to withstand the maximum TLP test voltage observed (combined initial charge voltage and reflecte

47、d voltage) without electrical damage. 4.8 Attenuator Attenuator requirements: a) shall be able to withstand maximum current for the largest TLP test pulse width without electrical damage. b) shall be able to withstand the maximum TLP test voltage observed (combined initial charge voltage and reflect

48、ed voltage) without electrical damage. 4.9 Rise time filter Rise time filter requirements: BS IEC 62615:2010 8 62615 IEC:2010 a) shall be able to withstand maximum current for the largest TLP test pulse width without electrical damage. b) shall be able to withstand the maximum TLP test voltage obser

49、ved (combined initial charge voltage and reflected voltage) without electrical damage. 5 TLP waveform parameters 5.1 Pulse characteristics This subclause describes pulse characteristics for specified load conditions. Table 1 summarizes these pulse characteristics. Table 1 TLP current and voltage pulse parameters TLP Pulse Parameters (Voltage and Current Conditions) Typical Value Load Condition Current pulse width 100 ns Short Voltage rise time 0,2 to 10 ns