BS IEC 62830-2-2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2 Thermo power based thermoelectric energy harvesting《半导体器件 能量收集和产生用半导.pdf

1、Semiconductor devices Semiconductor devices for energy harvesting and generationPart 2: Thermo power based thermoelectric energy harvestingBS IEC 62830-2:2017BSI Standards PublicationWB11885_BSI_StandardCovs_2013_AW.indd 1 15/05/2013 15:06IEC 62830-2 Edition 1.0 2017-01 INTERNATIONAL STANDARD NORME

2、INTERNATIONALE Semiconductor devices Semiconductor devices for energy harvesting and generation Part 2: Thermo power based thermoelectric energy harvesting Dispositifs semiconducteurs Dispositifs semiconducteurs pour recupration et production dnergie Partie 2: Rcupration dnergie thermolectrique base

3、 sur la puissance thermolectrique INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE ICS 31.080.99 ISBN 978-2-8322-3830-1 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale Warning! Mak

4、e sure that you obtained this publication from an authorized distributor. Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agr. National forewordThis British Standard is the UK implementation of IEC 62830-2:2017.The UK participation in its preparation was e

5、ntrusted to Technical Committee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained on request to its secretary.This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. The Bri

6、tish Standards Institution 2017 Published by BSI Standards Limited 2017ISBN 978 0 580 85753 9ICS 31.080.99Compliance with a British Standard cannot confer immunity from legal obligations. This British Standard was published under the authority of the Standards Policy and Strategy Committee on 31 Aug

7、ust 2017.Amendments/corrigenda issued since publicationDate Text affectedBRITISH STANDARDBS IEC 62830-2:2017IEC 62830-2 Edition 1.0 2017-01 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Semiconductor devices for energy harvesting and generation Part 2: Thermo power based thermoel

8、ectric energy harvesting Dispositifs semiconducteurs Dispositifs semiconducteurs pour recupration et production dnergie Partie 2: Rcupration dnergie thermolectrique base sur la puissance thermolectrique INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE ICS 31.080.9

9、9 ISBN 978-2-8322-3830-1 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale Warning! Make sure that you obtained this publication from an authorized distributor. Attention! Veuillez vous assurer que vous avez obtenu cet

10、te publication via un distributeur agr. BS IEC 62830-2:2017 2 IEC 62830-2:2017 IEC 2017 CONTENTS FOREWORD . 3 1 Scope 5 2 Normative references 5 3 Terms and definitions 5 4 Testing methods 6 4.1 General . 6 4.2 Thermo-power measurement 6 4.2.1 Integral method . 6 4.2.2 Differential method 8 4.3 Ther

11、mal conductivity measurement . 11 4.3.1 General . 11 4.3.2 Transient 3 method . 12 4.3.3 Test report . 13 Annex A (informative) Thermoelectric energy generator . 14 Bibliography 15 Figure 1 Schematic diagram of integral method for measurement of the thermo-power of thermoelectric materials . 7 Figur

12、e 2 Schematic diagram of the differential method for measuring the thermo-power . 9 Figure 3 Diagram of the setup for measuring electrical resistivity and Seebeck coefficient using differential method 10 Figure 4 Schematic diagram of measuring in-plane thermal conductivity of thin film on the substr

13、ate 12 Figure 5 The MEMS structure for measuring thermal conductivity of thin film materials using transient 3 method. 12 BS IEC 62830-2:2017 2 IEC 62830-2:2017 IEC 2017 CONTENTS FOREWORD . 3 1 Scope 5 2 Normative references 5 3 Terms and definitions 5 4 Testing methods 6 4.1 General . 6 4.2 Thermo-

14、power measurement 6 4.2.1 Integral method . 6 4.2.2 Differential method 8 4.3 Thermal conductivity measurement . 11 4.3.1 General . 11 4.3.2 Transient 3 method . 12 4.3.3 Test report . 13 Annex A (informative) Thermoelectric energy generator . 14 Bibliography 15 Figure 1 Schematic diagram of integra

15、l method for measurement of the thermo-power of thermoelectric materials . 7 Figure 2 Schematic diagram of the differential method for measuring the thermo-power . 9 Figure 3 Diagram of the setup for measuring electrical resistivity and Seebeck coefficient using differential method 10 Figure 4 Schem

16、atic diagram of measuring in-plane thermal conductivity of thin film on the substrate 12 Figure 5 The MEMS structure for measuring thermal conductivity of thin film materials using transient 3 method. 12 IEC 62830-2:2017 IEC 2017 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES SE

17、MICONDUCTOR DEVICES FOR ENERGY HARVESTING AND GENERATION Part 2: Thermo power based thermoelectric energy harvesting FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Commi

18、ttees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Availa

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27、 publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. Internation

28、al Standard IEC 62830-2 has been prepared by IEC technical committee 47: Semiconductor devices. The text of this standard is based on the following documents: FDIS Report on voting 47/2329/FDIS 47/2352/RVD Full information on the voting for the approval of this International Standard can be found in

29、 the report on voting indicated in the above table. This document has been drafted in accordance with the ISO/IEC Directives, Part 2. BS IEC 62830-2:2017 4 IEC 62830-2:2017 IEC 2017 A list of all the parts in the IEC 62830 series, published under the general title Semiconductor devices Semiconductor

30、 devices for energy harvesting and generation, can be found on the IEC website. The committee has decided that the contents of this document will remain unchanged until the stability date indicated on the IEC website under “http:/webstore.iec.ch“ in the data related to the specific document. At this

31、 date, the document will be reconfirmed, withdrawn, replaced by a revised edition, or amended. BS IEC 62830-2:2017 4 IEC 62830-2:2017 IEC 2017 A list of all the parts in the IEC 62830 series, published under the general title Semiconductor devices Semiconductor devices for energy harvesting and gene

32、ration, can be found on the IEC website. The committee has decided that the contents of this document will remain unchanged until the stability date indicated on the IEC website under “http:/webstore.iec.ch“ in the data related to the specific document. At this date, the document will be reconfirmed

33、 withdrawn, replaced by a revised edition, or amended. IEC 62830-2:2017 IEC 2017 5 SEMICONDUCTOR DEVICES SEMICONDUCTOR DEVICES FOR ENERGY HARVESTING AND GENERATION Part 2: Thermo power based thermoelectric energy harvesting 1 Scope This part of IEC 62830 describes procedures and definitions for mea

34、suring the thermo power of thin films used in micro-scale thermoelectric energy generators, micro heaters and micro coolers. This part of IEC 62830 specifies the methods of tests and the characteristic parameters of the thermoelectric properties of wire, bulk and thin films which have a thickness of

35、 less than 5 m and energy harvesting devices that have thermoelectric thin films, in order to accurately evaluate their performance and practical uses. This part of IEC 62830 is applicable to energy harvesting devices for consumer, general industries, military and aerospace applications without any

36、limitations of device technology and size. 2 Normative references There are no normative references in this document. 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. ISO and IEC maintain terminological databases for use in standardization at the

37、following addresses: IEC Electropedia: available at http:/www.electropedia.org/ ISO Online browsing platform: available at http:/www.iso.org/obp 3.1 Seebeck coefficient S magnitude of an induced thermoelectric voltage in response to a temperature difference across a material, and the entropy per cha

38、rge carrier in the material 3.2 thermal conductivity k at a point fixed in a medium with a temperature field, scalar quantity characterizing the ability of the medium to transmit heat through a surface element containing that point: =-k grad T, where is the density of heat flow rate and T is thermod

39、ynamic temperature Note 1 to entry: In an anisotropic medium, thermal conductivity is a tensor quantity. Note 2 to entry: The coherent SI unit of thermal conductivity is watt per metre kelvin, W/(mK). SOURCE: IEC 60050-113:2011, 113-04-38 3.3 electrical conductivity specific conductance value of a m

40、aterials ability to conduct an electrical current BS IEC 62830-2:2017 6 IEC 62830-2:2017 IEC 2017 3.4 figure of merit Z characteristic value of thermoelectric films given by the convolution of electrical conductivity and the square of the Seebeck coefficient divided by thermal conductivity 4 Testing

41、 methods 4.1 General It is indispensable to measure the thermo-power to establish the thermoelectric devices. The electrical resistivity and the thermopower shall be measured in order to define the thermoelectric properties of the materials used for fabrication of thermoelectric devices. Generally t

42、o measure these values the materials should be investigated under temperature from between 3 K and 300 K. There are two types of measuring methods for thermo-power measurement. The first is the integral method and the other is the differential method. In case of measuring the electrical conductance

43、the electrical resistivity is to be measured and the reciprocal number of the measured value is to be used.A four-point proof method is typically used in electrical resistivity. When this method is used, the total voltage drop can be measured by the sum of resistive voltage and Seebeck voltage. To o

44、btain resistive voltage without the Seebeck-induced voltage, very fast switching DC or AC measurement is needed to measure the electrical resistivity. In addition, the sample will be prepared of a wire type which has a diameter under 200 m and thin films which have been deposited onto the silicon su

45、bstrate with a 100 nanometer insulating layer. 4.2 Thermo-power measurement 4.2.1 Integral method 4.2.1.1 General The integral method is a very simple method of obtaining the thermo-power value for thermoelectric materials. The generated voltage change between the reference material and sample mater

46、ial is used for the calculation of the thermo-power value of the materials. In this method the materials shall be fabricated in wire form to make a thermocouple form. The third thermocouple can be attached to the hot junction of the reference and sample wire to measure the temperature of the junctio

47、n. The schematic diagram of the integral method to measure the thermo-power of thermoelectric materials is shown in Figure 1. BS IEC 62830-2:2017 6 IEC 62830-2:2017 IEC 2017 3.4 figure of merit Z characteristic value of thermoelectric films given by the convolution of electrical conductivity and the

48、 square of the Seebeck coefficient divided by thermal conductivity 4 Testing methods 4.1 General It is indispensable to measure the thermo-power to establish the thermoelectric devices. The electrical resistivity and the thermopower shall be measured in order to define the thermoelectric properties

49、of the materials used for fabrication of thermoelectric devices. Generally to measure these values the materials should be investigated under temperature from between 3 K and 300 K. There are two types of measuring methods for thermo-power measurement. The first is the integral method and the other is the differential method. In case of measuring the electrical conductance the electrical resistivity is to