BS ISO 11452-3-2016 Road vehicles Component test methods for electrical disturbances from narrowband radiated electromagnetic energy Transverse electromagnetic (TEM) cell《道路车辆 用窄带发.pdf

1、BS ISO 11452-3:2016Road vehicles Componenttest methods for electricaldisturbances from narrowbandradiated electromagneticenergyPart 3: Transverse electromagnetic (TEM)cellBSI Standards PublicationWB11885_BSI_StandardCovs_2013_AW.indd 1 15/05/2013 15:06BS ISO 11452-3:2016 BRITISH STANDARDNational for

2、ewordThis British Standard is the UK implementation of ISO 11452-3:2016.The UK participation in its preparation was entrusted to TechnicalCommittee AUE/32, Electrical and electronic components andgeneral system aspects (Road vehicles).A list of organizations represented on this committee can beobtai

3、ned on request to its secretary.This publication does not purport to include all the necessaryprovisions of a contract. Users are responsible for its correctapplication. The British Standards Institution 2016.Published by BSI Standards Limited 2016ISBN 978 0 580 87192 4ICS 33.100.20; 43.040.10Compli

4、ance with a British Standard cannot confer immunity fromlegal obligations.This British Standard was published under the authority of theStandards Policy and Strategy Committee on 30 September 2016.Amendments/corrigenda issued since publicationDate T e x t a f f e c t e dBS ISO 11452-3:2016 ISO 2016R

5、oad vehicles Component test methods for electrical disturbances from narrowband radiated electromagnetic energy Part 3: Transverse electromagnetic (TEM) cellVhicules routiers Mthodes dessai dun quipement soumis des perturbations lectriques par rayonnement dnergie lectromagntique en bande troite Part

6、ie 3: Cellule lectromagntique transverse (TEM)INTERNATIONAL STANDARDISO11452-3Third edition2016-09-01Reference numberISO 11452-3:2016(E)BS ISO 11452-3:2016ISO 11452-3:2016(E)ii ISO 2016 All rights reservedCOPYRIGHT PROTECTED DOCUMENT ISO 2016, Published in SwitzerlandAll rights reserved. Unless othe

7、rwise specified, no part of this publication may be reproduced or utilized otherwise in any form or by any means, electronic or mechanical, including photocopying, or posting on the internet or an intranet, without prior written permission. Permission can be requested from either ISO at the address

8、below or ISOs member body in the country of the requester.ISO copyright officeCh. de Blandonnet 8 CP 401CH-1214 Vernier, Geneva, SwitzerlandTel. +41 22 749 01 11Fax +41 22 749 09 47copyrightiso.orgwww.iso.orgBS ISO 11452-3:2016ISO 11452-3:2016(E)Foreword ivIntroduction v1 Scope . 12 Normative refere

9、nces 13 Terms and definitions . 14 Test conditions . 15 Test apparatus . 25.1 TEM cell . 25.2 Instrumentation . 35.3 Test set-up . 35.3.1 General 35.3.2 Exposure of device under test and wiring harness (for major field coupling to the harness) 45.3.3 Exposure of device under test alone (for major fi

10、eld coupling to that device) 66 Test procedure 76.1 Test plan 76.2 Test method . 76.2.1 General 76.2.2 Test level setting . 76.2.3 DUT test . 86.3 Test report . 8Annex A (informative) TEM cell dimensions .10Annex B (informative) Calculations and measurements of TEM-cell frequency range 12Annex C (in

11、formative) Installation of external components and low pass filter design 14Annex D (informative) Test setup without low pass filters 17Annex E (informative) Function performance status classification (FPSC) and test severity levels .20Bibliography .21 ISO 2016 All rights reserved iiiContents PageBS

12、 ISO 11452-3:2016ISO 11452-3:2016(E)ForewordISO (the International Organization for Standardization) is a worldwide federation of national standards bodies (ISO member bodies). The work of preparing International Standards is normally carried out through ISO technical committees. Each member body in

13、terested in a subject for which a technical committee has been established has the right to be represented on that committee. International organizations, governmental and non-governmental, in liaison with ISO, also take part in the work. ISO collaborates closely with the International Electrotechni

14、cal Commission (IEC) on all matters of electrotechnical standardization.The procedures used to develop this document and those intended for its further maintenance are described in the ISO/IEC Directives, Part 1. In particular the different approval criteria needed for the different types of ISO doc

15、uments should be noted. This document was drafted in accordance with the editorial rules of the ISO/IEC Directives, Part 2 (see www.iso.org/directives).Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. ISO shall not be held responsi

16、ble for identifying any or all such patent rights. Details of any patent rights identified during the development of the document will be in the Introduction and/or on the ISO list of patent declarations received (see www.iso.org/patents).Any trade name used in this document is information given for

17、 the convenience of users and does not constitute an endorsement.For an explanation on the meaning of ISO specific terms and expressions related to conformity assessment, as well as information about ISOs adherence to the World Trade Organization (WTO) principles in the Technical Barriers to Trade (

18、TBT) see the following URL: www.iso.org/iso/foreword.html.The committee responsible for this document is ISO/TC 22, Road vehicles, Subcommittee SC 32, Electrical and electronic components and general system aspects.This third edition cancels and replaces the second edition (ISO 11452-3:2001), which

19、has been technically revised with the following changes: the use of forward power as the levelling parameter to make it consistent with the other ISO 11452 standards has been implemented; Annex D for testing of devices without using low pass filters has been included.A list of all parts in the ISO 1

20、1452 series can be found on the ISO website.iv ISO 2016 All rights reservedBS ISO 11452-3:2016ISO 11452-3:2016(E)IntroductionImmunity measurements of complete road vehicles are generally able to be carried out only by the vehicle manufacturer, owing to, for example, high costs of absorber-lined shie

21、lded enclosures, the desire to preserve the secrecy of prototypes or a large number of different vehicle models.For research, development and quality control, a laboratory measuring method can be used by both vehicle manufacturers and equipment suppliers to test electronic components.The TEM cell me

22、thod has the major advantage of not radiating energy into the surrounding environment. The method can be used for testing either the immunity of a component with the field coupling to the wiring harness or the immunity of the component alone with minimum exposure to the wiring harness. ISO 2016 All

23、rights reserved vBS ISO 11452-3:2016BS ISO 11452-3:2016Road vehicles Component test methods for electrical disturbances from narrowband radiated electromagnetic energy Part 3: Transverse electromagnetic (TEM) cell1 ScopeThis document specifies transverse electromagnetic (TEM) cell tests for determin

24、ing the immunity of electronic components of passenger cars and commercial vehicles to electrical disturbances from narrowband radiated electromagnetic energy, regardless of the vehicle propulsion system (e.g. spark-ignition engine, diesel engine, electric motor).The electromagnetic disturbances con

25、sidered are limited to continuous narrowband electromagnetic fields.2 Normative referencesThe following documents are referred to in the text in such a way that some or all of their content constitutes requirements of this document. For dated references, only the edition cited applies. For undated r

26、eferences, the latest edition of the referenced document (including any amendments) applies.ISO 11452-1, Road vehicles Component test methods for electrical disturbances from narrowband radiated electromagnetic energy Part 1: General principles and terminology3 Terms and definitionsFor the purposes

27、of this document, the terms and definitions given in ISO 11452-1 apply.ISO and IEC maintain terminological databases for use in standardization at the following addresses: IEC Electropedia: available at http:/www.electropedia.org/ ISO Online browsing platform: available at http:/www.iso.org/obp4 Tes

28、t conditionsThe upper frequency range limit of the TEM cell is a direct function of the TEM cell dimensions.For testing automotive electronic systems, a 0,01 MHz to 200 MHz TEM cell should be used. See Annex A for suggested cell dimensions.The user shall specify the test severity level or levels ove

29、r the frequency range. See Annex E for suggested test severity levels.Standard test conditions shall be those given in ISO 11452-1 for the following: test temperature; supply voltage;INTERNATIONAL STANDARD ISO 11452-3:2016(E) ISO 2016 All rights reserved 1BS ISO 11452-3:2016ISO 11452-3:2016(E) modul

30、ation; dwell time; frequency step sizes; definition of test severity levels; test-signal quality.5 Test apparatus5.1 TEM cellThe TEM cell used for this test is a rectangular coaxial line with a 50 characteristic impedance (see Figure 1). The device under test is exposed to a uniform TEM field.The TE

31、M cell is a laboratory measurement system which can be used to generate test fields within 2 dB of the theoretical value if the device under test does not occupy an excessive portion of the test volume (see 5.3).Key1 outer conductor (shield)2 septum (inner conductor)3 access door4 connector panel (o

32、ptional)5 coaxial connectors6 dielectric support (relative permittivity r 1,4)7 device under test8 input/output leadsFigure 1 TEM cell2 ISO 2016 All rights reservedBS ISO 11452-3:2016ISO 11452-3:2016(E)5.2 InstrumentationFigure 2 shows an example of a TEM cell test set-up. The TEM cell has high reso

33、nances in the region greater than the recommended upper frequency limit.A low pass filter with an attenuation of at least 60 dB at frequencies above 1,5 times the cut-off frequency of the TEM cell may be installed (e.g. 200 MHz TEM cell: 60 dB for frequencies above 300 MHz) to avoid resonances.Key1

34、signal generator 9 low pass filters/connector panel2 broadband amplifier 10 coupler3 low pass filter (optional) 11 high power load (50 )4 dual-directional coupler (30 dB decoupling ratio 12 controllerminimum) 13 TEM cell5 RF-power meteraPforward(forward power)6 peripheralbPreflected(reflected power)

35、7 device under testcPoutput(output power)8 dielectric support Figure 2 Example TEM cell configuration5.3 Test set-up5.3.1 GeneralIn order to maintain the homogeneous field in the TEM cell and obtain reproducible measurement results, the device under test shall be no larger than one-sixth of the cell

36、 (inside) height, b (see Figure 3 ISO 2016 All rights reserved 3BS ISO 11452-3:2016ISO 11452-3:2016(E)and Figure A.1). The device under test should be placed in the centre of the cell on a dielectric equipment support.The device under test and the wiring harness may be positioned in either of two ar

37、rangements, depending on whether the exposure of the device under test and the wiring harness (see 5.3.2) or that of the device alone (see 5.3.3) is being tested.An alternative test set-up without low pass filter is presented in Annex D.5.3.2 Exposure of device under test and wiring harness (for maj

38、or field coupling to the harness)The height of the dielectric support is one-sixth of cell height b (see Figure 3). In order to obtain reproducible measurement results, the device under test, together with its wiring harness or printed circuit board, shall be placed in the same position in the TEM c

39、ell for each measurement. In addition to the direct RF-field coupling to the device under test, the use of an unshielded harness or printed circuit board will result in a common mode electrical field coupling and a differential mode magnetic field coupling, depending on the inclination and the width

40、 of the harness or circuit board.Key1 device under test2 dielectric support (relative permittivity r 1,4)3 printed circuit board (no ground plane) or wiring harness, unshielded4 connector5 coaxial connectors6 connector panel7 TEM cell wall8 cables9 septumb TEM cell height (see Annex A)Figure 3 Examp

41、le test set-up Major field coupling to wiring harness (side view)The connector panel should be attached to the TEM cell as close as possible to the printed lead system. The supply and signal leads from the connector in the cell wall are directly connected to the device 4 ISO 2016 All rights reserved

42、BS ISO 11452-3:2016ISO 11452-3:2016(E)under test, using either a printed circuit board of length suitable for positioning the device under test in the allowed working region of the TEM cell, or a set of leads secured to a rigid support (see Figure 3 and Figure 4). The printed circuit board or suppor

43、ted wiring harness between the connector and the device under test will yield reproducible measurement results if the position of the leads and the device under test in the TEM cell are fixed.Key1 device under test2 dielectric support (relative permittivity r 1,4)3 printed circuit board or wiring ha

44、rness4 connector5 coaxial connectors6 connector panel7 TEM cell wall8 cablesNOTE RF filters can be connected to the coaxial connectors in the connector panel or directly to the connector in the TEM cell wall.Figure 4 Example test set-up Major field coupling to wiring harness (top view) ISO 2016 All

45、rights reserved 5BS ISO 11452-3:2016ISO 11452-3:2016(E)5.3.3 Exposure of device under test alone (for major field coupling to that device)The height of the dielectric support is b/6 mm (see Figure 5). In order to obtain reproducible measurement results, the device under test shall be placed in the s

46、ame position in the TEM cell for each measurement.Dimensions in millimetresKey1 device under test2 dielectric support (relative permittivity r 1,4)3 shielded wiring harness4 connector5 coaxial connectors6 connector panel7 TEM cell wall8 cables9 septumb TEM cell height (see Annex A)Figure 5 Example t

47、est set-up Major field coupling to device under test (side view)The connector panel should be attached to the TEM cell. The arrangement and nature of supply and signal leads shall be chosen in order to minimize the coupling on these leads, which shall be secured on the floor of the TEM cell and shie

48、lded between the connector in the cell wall and the device under test. This can be done by using metal tape with conductive adhesive to cover the leads on the floor of the TEM cell.The shield shall be in electrical contact with the cell floor, but shall not be in contact with the case of the device

49、under test.6 ISO 2016 All rights reservedBS ISO 11452-3:2016ISO 11452-3:2016(E)6 Test procedure6.1 Test planPrior to performing the test, a test plan shall be generated and which shall cover the following: frequency range; modulation; test set-up to be used (5.3.2 or 5.3.3 or Annex D); device under test mode of operation; device under test acceptance criteria; definition of test severity levels; test signal quality; use of net or output power measurements; device under