BS ISO 13083-2015 Surface chemical analysis Scanning probe microscopy Standards on the definition and calibration of spatial resolution of electrical scanning probe microscopes (ESa.pdf

1、BSI Standards PublicationBS ISO 13083:2015Surface chemical analysis Scanning probe microscopy Standards on the definitionand calibration of spatialresolution of electricalscanning probe microscopes(ESPMs) such as SSRM and SCMfor 2D-dopant imaging andother purposesBS ISO 13083:2015 BRITISH STANDARDNa

2、tional forewordThis British Standard is the UK implementation of ISO 13083:2015.The UK participation in its preparation was entrusted to TechnicalCommittee CII/60, Surface chemical analysis.A list of organizations represented on this committee can beobtained on request to its secretary.This publicat

3、ion does not purport to include all the necessaryprovisions of a contract. Users are responsible for its correctapplication. The British Standards Institution 2015. Published by BSI StandardsLimited 2015ISBN 978 0 580 67751 9ICS 71.040.40Compliance with a British Standard cannot confer immunity from

4、legal obligations.This British Standard was published under the authority of theStandards Policy and Strategy Committee on 31 August 2015.Amendments issued since publicationDate Text affectedBS ISO 13083:2015 ISO 2015Surface chemical analysis Scanning probe microscopy Standards on the definition and

5、 calibration of spatial resolution of electrical scanning probe microscopes (ESPMs) such as SSRM and SCM for 2D-dopant imaging and other purposesAnalyse chimique des surfaces - Microscopie sonde balayage - Normes sur la dfinition et ltalonnage de la rsolution spatiale des microscopes lectriques sond

6、e balayage (ESPMs) comme SSRM et SCM pour limagerie 2D-dopant et dautres finsINTERNATIONAL STANDARDISO13083First edition2015-08-15Reference numberISO 13083:2015(E)BS ISO 13083:2015ISO 13083:2015(E)ii ISO 2015 All rights reservedCOPYRIGHT PROTECTED DOCUMENT ISO 2015, Published in SwitzerlandAll right

7、s reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized otherwise in any form or by any means, electronic or mechanical, including photocopying, or posting on the internet or an intranet, without prior written permission. Permission can be requested from eit

8、her ISO at the address below or ISOs member body in the country of the requester.ISO copyright officeCh. de Blandonnet 8 CP 401CH-1214 Vernier, Geneva, SwitzerlandTel. +41 22 749 01 11Fax +41 22 749 09 47copyrightiso.orgwww.iso.orgBS ISO 13083:2015ISO 13083:2015(E)Foreword ivIntroduction v1 Scope .

9、12 Normative references 13 Terms and definitions . 14 Symbols and abbreviated terms . 15 General information . 25.1 Background information 25.2 Target 25.2.1 Scanning capacitance microscope 25.2.2 Scanning spreading resistance microscope 25.3 Measurement method for lateral resolution in SCM and SSRM

10、 35.4 Key parameters in determining the lateral resolution . 56 Measurement of lateral resolution of SCM with the sharp-edge method 56.1 Background information 56.2 Selection of the sample 56.3 Setting the parameters before the operation of the instrument 66.4 Data collection . 66.5 Data analysis .

11、66.5.1 Obtaining the resolution . 66.5.2 Random contributions to the resolution value 76.6 Recording of the parameters 77 Measurement of lateral resolution of SSRM with the sharp-edge method 87.1 Background information 87.2 Selection of the sample 87.3 Setting the parameters before the operation of

12、the instrument 87.4 Data collection . 87.5 Data analysis . 87.5.1 Obtaining the resolution . 87.5.2 Random contributions to the resolution value 97.6 Recording of the parameters 9Annex A (informative) An example of the measurement of SCM resolution 10Annex B (informative) An example of the measureme

13、nt of SSRM resolution 12Bibliography .14 ISO 2015 All rights reserved iiiContents PageBS ISO 13083:2015ISO 13083:2015(E)ForewordISO (the International Organization for Standardization) is a worldwide federation of national standards bodies (ISO member bodies). The work of preparing International Sta

14、ndards is normally carried out through ISO technical committees. Each member body interested in a subject for which a technical committee has been established has the right to be represented on that committee. International organizations, governmental and non-governmental, in liaison with ISO, also

15、take part in the work. ISO collaborates closely with the International Electrotechnical Commission (IEC) on all matters of electrotechnical standardization.The procedures used to develop this document and those intended for its further maintenance are described in the ISO/IEC Directives, Part 1. In

16、particular the different approval criteria needed for the different types of ISO documents should be noted. This document was drafted in accordance with the editorial rules of the ISO/IEC Directives, Part 2 (see www.iso.org/directives).Attention is drawn to the possibility that some of the elements

17、of this document may be the subject of patent rights. ISO shall not be held responsible for identifying any or all such patent rights. Details of any patent rights identified during the development of the document will be in the Introduction and/or on the ISO list of patent declarations received (se

18、e www.iso.org/patents).Any trade name used in this document is information given for the convenience of users and does not constitute an endorsement.For an explanation on the meaning of ISO specific terms and expressions related to conformity assessment, as well as information about ISOs adherence t

19、o the WTO principles in the Technical Barriers to Trade (TBT) see the following URL: Foreword - Supplementary informationThe committee responsible for this document is ISO/TC 201, Surface chemical analysis, Subcommittee SC 9, Scanning probe microscopy.iv ISO 2015 All rights reservedBS ISO 13083:2015

20、ISO 13083:2015(E)IntroductionElectrical scanning probe microscopy (ESPM) is a branch of scanning probe microscopy (SPM) with the capability of electrical imaging at nanometre spatial resolution. ESPM includes electrostatic force microscopy (EFM), scanning capacitance microscopy (SCM), scanning sprea

21、ding resistance microscopy (SSRM), etc. Because ESPM can observe electrical or electronic properties with molecule-scale resolution, it is applied to many fields such as semiconductors, displays, etc. However, there has been no standard measurement method for the spatial resolution.In this Internati

22、onal Standard, standardized procedures to determine the spatial (lateral) resolution of SSRM and SCM, which are widely used to image the distribution of carrier and other electrical properties in semiconductor devices, are provided with the use of suitable reference materials. This International Sta

23、ndard uses the sharp-edge method to measure the lateral resolution of ESPM in a similar manner to that already used in measuring the resolution in micro-beam spectroscopy and in depth-profiling measurements with Auger electron spectroscopy and X-ray photoelectron spectroscopy (refer to ISO 18516). I

24、SO 2015 All rights reserved vBS ISO 13083:2015BS ISO 13083:2015Surface chemical analysis Scanning probe microscopy Standards on the definition and calibration of spatial resolution of electrical scanning probe microscopes (ESPMs) such as SSRM and SCM for 2D-dopant imaging and other purposes1 ScopeTh

25、is International Standard describes a method for measuring the spatial (lateral) resolution of scanning capacitance microscopes (SCMs) or scanning spreading resistance microscopes (SSRMs), which are widely used in imaging the distribution of carriers and other electrical properties in semiconductor

26、devices. The method involves the use of a sharp-edged artefact.2 Normative referencesThe following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the

27、latest edition of the referenced document (including any amendments) applies.ISO 18115-2, Surface chemical analysis Vocabulary Part 2: Terms used in scanning-probe microscopy3 Terms and definitionsFor the purposes of this document, the terms and definitions given in ISO 18115-2 and the following app

28、ly.3.1electrical scanning probe microscopyESPMSPM mode in which a conductive tip is used to measure electrical properties such as capacitance, resistance, electrical field, etc.3.2contact modemode of scanning the probe tip over the sample surface, adjusting the relative heights of the probe and samp

29、le, in which there is always a repulsive force between the probe and the sampleNote 1 to entry: This mode can be, for example, either the constant-height or constant-force mode.SOURCE: ISO 18115-2:2013, 6.354 Symbols and abbreviated termsAC alternating currentDC direct currentESPM electrical scannin

30、g probe microscopySPM scanning probe microscopyAFM atomic force microscopyINTERNATIONAL STANDARD ISO 13083:2015(E) ISO 2015 All rights reserved 1BS ISO 13083:2015ISO 13083:2015(E)MIS metal-insulator-semiconductorMOS metal-oxide-semiconductorSCM scanning capacitance microscopySIMS secondary ion mass

31、spectroscopyS/N signal to noise ratioSSRM scanning spreading resistance microscopyTEM transmission electron microscope2D two dimensionx spatial resolution of ESPM5 General information5.1 Background informationESPM is a branch of scanning probe microscope that can be used to image an electrical or el

32、ectronic property of a sample surface using an electrically conducting probe. Since this conductive probe is scanned over the sample surface in the contact mode, its lateral resolution is strongly related to the size and shape of the probe apex. Currently, this can be as small as a few nanometres, e

33、nabling sub-10 nanometre spatial resolution to be achieved. Such a high resolution, shown in ESPM images, allows the investigation of the two-dimensional distribution of carriers in nanoscale semiconductor devices.5.2 TargetThere are a number of types of ESPM categorized by the methods of electrical

34、 characterization. Among these ESPMs, this International Standard is for SCM and SSRM.5.2.1 Scanning capacitance microscopeScanning capacitance microscopy (SCM) is a modification of scanning probe microscopy in which a conductive probe is in contact with the surface of a sample, with an applied AC b

35、ias, and scanned across it. SCM characterizes the change in electrostatic capacitance between the sample and the probe on the surface of the sample. SCM uses an ultra-sharp conducting probe made from etched silicon (often coated with Pt/Ir or Co/Cr alloy) to form a metal-insulator-semiconductor (MIS

36、/MOS) capacitor with a semiconductor sample if a native oxide exists on the sample. When the conducting probe is in contact to the surface under an AC bias, generated capacitance variations on the surface can be detected using a GHz resonant capacitance sensor. The probe is then scanned across the s

37、emiconductors surface in x- and y-axes while the probe is operated under the contact mode.By applying an alternating bias to the metal-coated probe or the sample, carriers are alternately accumulated and depleted within the semiconductors surface layers under the probe, changing the tip-sample capac

38、itance. The magnitude of this change in capacitance with the applied voltage gives information about the concentration of carriers (SCM amplitude data), whereas the difference in phase between the capacitance change and the applied, alternating bias carries information about the sign of the charge c

39、arriers (SCM phase data).25.2.2 Scanning spreading resistance microscopeA very challenging task as the size of the semiconductor components shrinks towards sub-100 nm level is the development of new tools allowing two-dimensional (2D) carrier profiling with very high spatial resolution. One of the p

40、romising new tools is scanning spreading resistance microscopy (SSRM). 2 ISO 2015 All rights reservedBS ISO 13083:2015ISO 13083:2015(E)SSRM is based on atomic force microscopy (AFM) and has been developed in recent years to probe the 2D resistivity and carrier distribution in semiconductor devices.

41、In SSRM, a very small conductive tip is contacted on the sample surface to be used to measure the local spreading resistance, which is intimately linked to the local resistivity. Scanning a cross section of the sample provides a 2D map of the local spreading resistance with a spatial resolution set

42、by the tip radius (typically 5 nm 15 nm). The main advantages of SSRM lie in its relative robustness, as it is less sensitive to surface preparation than, for instance, scanning capacitance microscopy (SCM) leading to excellent reproducibility. SSRM also benefits from an excellent dynamic range cove

43、ring the entire dopant range of interest (1014 1020) cm3with constant sensitivity and from a high spatial resolution (set by the tip radius only) combined with very accurate junction delineation capabilities.35.3 Measurement method for lateral resolution in SCM and SSRMThe spatial resolution is not

44、only influenced by geometric factors of the conductive probe. Other factors that affect spatial resolution include surface roughness of the sample, contrast of the electrical image from difference in carrier density, pixilation, noise and sensitivity of the detector. The spatial resolution of the ES

45、PM instrument or the image has been determined by a few methods: imaging a regular pattern and measuring the smallest feature and imaging across an electrically abrupt interface, etc.It is very difficult to fabricate electrically separated layers with two different carrier density. Also, it is cruci

46、al to connect, electrically, each plane of the repetitive pattern or the smallest feature. Therefore, the method chosen here is the sharp-edge method based on consideration of ease of use. This method of resolution definition is widely applied for depth-profiling of micro-beam spectroscopy such as s

47、econdary ion mass spectroscopy (SIMS). An electrically abrupt interface is line-scanned perpendicularly across the interface by a conductive probe and the detected profile of electrical characteristics is inspected. In the micro-beam spectroscopy, so called 16 % to 84 % width or some other criterion

48、 may be applied as the spatial resolution of SCM or SSRM as shown in Figure 1.14However, the definition of the resolution as 10 % to 90 % width is adopted as a standard method for SCM and SSRM since it has been well agreed academically.56 ISO 2015 All rights reserved 3BS ISO 13083:2015ISO 13083:2015

49、(E)123a) Side view of the sample and probexb) Electric output as a function of the scan position Key1 conductive probe2 coating3 siliconx spatial resolution of ESPMFigure 1 Schematic of sharp-edge method applied to SCM and SSRMIn applying this method and to obtain high-resolution data, the following should be noted.a) It is recognized that in SSRM, the resolution depends on the contrast. Therefore, the resolution should be compared at the same contrast level. A discussion of contrast levels is given in 7.3.b)