BS QC 790111-1993 Specification for harmonized system of quality assessment for electronic components - Semiconductor devices - Integrated circuits - Blank detail specification int.pdf

1、BRITISH STANDARD BS QC 790111:1993 IEC 748-2-8: 1993 Specification for Harmonized system of quality assessment for electronic components Semiconductor devices Integratedcircuits Blank detail specification Integrated circuit static read/write memoriesBSQC790111:1993 BSI 10-1999 ISBN 0 580 35604 3 Ame

2、ndments issued since publication Amd. No. Date CommentsBSQC790111:1993 BSI 10-1999 i Contents Page National foreword ii Introduction 1 1 Marking and ordering information 2 2 Application related description 3 3 Specification of the function 3 4 Limiting values 3 5 Operating conditions 4 6 Electrical

3、characteristics 4 7 Programming 7 8 Mechanical and environmental ratings, characteristics and data 7 9 Additional information 7 10 Screening 7 11 Quality assessment procedures 7 12 Structural similarity procedures 7 13 Test conditions and inspection requirements 7 14 Additional measurement method 12

4、 Table I Group A 9 Table II Group B 10 Table III Group C 11 Table IV Group D 12BSQC790111:1993 ii BSI 10-1999 National foreword This British Standard has been prepared under the direction of the Electronic Components Standards Policy Committee, ECL/-. It is identical with IECPublication748-2-8 (QC 7

5、90111) “Semiconductor devices. Integrated circuits. Part 2: Digital integrated circuits. Section 8 Blank detail specification for integrated circuit static read/write memories” published by the International Electrotechnical Commission (IEC) and is a harmonized specification within the IECQ system o

6、f quality assessment for electronic components. This blank detail specification is one of a series of blank detail specifications for semiconductor devices to be used with BS QC700000:1991 “Harmonized system of quality assessment for electronic components. Generic specification for discrete devices

7、and integrated circuits” and BS QC 790100:1991 Harmonized system of quality assessment for electronic components. Semiconductor devices. Sectional specification for semiconductor integrated circuits excluding hybrid circuits. The Technical Committee has reviewed the provisions of IEC134 to which ref

8、erence is made in the text, and has decided that they are acceptable for use in conjunction with this standard. A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standards are responsible for their correct application. Compliance with a Briti

9、sh Standard does not of itself confer immunity from legal obligations. Cross-references International Standard a Corresponding British Standard IEC 68-2-17 BS 2011 Environmental testing Part2.1Q:1981Test Q. Sealing (Identical) IEC 617-12 BS 3939 Graphical symbols for electrical power, telecommunicat

10、ions and electronics diagrams Part12:1991 Guide for binary logic elements (Identical) IEC 747-10 BS QC 700000:1991 Harmonized system of quality assessment for electronic components. Generic specification for discrete devices and integrated circuits (Identical) IEC 748-11 BS QC 790100:1991 Harmonized

11、 system of quality assessment for electronic components. Semiconductor devices. Sectional specification for semiconductor integrated circuits excluding hybrid circuits (Identical) IEC 749 BS 6493 Semiconductor devices Part3:1985Mechanical and climatic test methods (Identical) QC 001002 BS QC 001002:

12、1991 Rules of Procedure of the IECQuality Assessment System for Electronic Components (IECQ) (Identical) a Undated in the text. Summary of pages This document comprises a front cover, an inside front cover, pagesi andii, pages1 to12 and a back cover. This standard has been updated (see copyright dat

13、e) and may have had amendments incorporated. This will be indicated in the amendment table on the inside front cover.BSQC790111:1993 BSI 10-1999 1 Introduction The IEC Quality Assessment System for Electronic Components is operated in accordance with the statutes of the IEC and under the authority o

14、f the IEC. The object of this system is to define quality assessment procedures in such a manner that electronic components released by one participating country as conforming with the requirements of an applicable specification are equally acceptable in all other participating countries without the

15、 need for further testing. This blank detail specification is one of a series of blank detail specifications for semiconductor devices and shall be used with the following IEC Publications: 747-10/QC 700000: Semiconductor devices. Discrete devices. Part 10: Generic specification for discrete devices

16、 and integrated circuits. 748-11/QC 790100: Semiconductor devices. Integrated circuits. Part 11: Sectional specification for semiconductor integrated circuits excluding hybrid circuits. Required information Numbers shown in brackets on this and the following pages correspond to the following items o

17、f required information, which should be entered in the spaces provided. Identification of the detail specification 1 The name of the National Standards Organization under whose authority the detail specification is issued. 2 The IECQ number of the detail specification. 3 The numbers and issue number

18、s of the generic and sectional specifications. 4 The national number of the detail specification, date of issue and any further information, if required by the national system. Identification of the component 5 Main function and type number. 6 Information on typical construction (materials, main tec

19、hnology) and package. If applicable, variants of the products shall be given here together with the variant characteristics. The detail specification shall give a brief description including the following: technology (NMOS, H MOS); structure (words bits); type of output circuit (for example: three s

20、tate); major functions. 7 Outline drawing, terminal identification, marking and/or reference to the relevant document for outlines. 8 Category of assessed quality according to subclause 2.6 of the generic specification. 9 Reference data. The clauses given in square brackets on the next pages of this

21、 standard, which form the front page of the detail specification, are intended for guidance to the specification writer and shall not be included in the detail specification. When confusion may arise as to whether the paragraph is only instruction to the writer or not, the paragraph shall be indicat

22、ed between brackets.BSQC790111:1993 2 BSI 10-1999 1 Marking and ordering information 1.1 Marking See subclause2.5 of the generic specification. 1.2 Ordering information The following minimum information is necessary to order a specific device, unless otherwise specified: precise type reference (and

23、nominal voltage value, if required); IECQ reference of detail specification with issue number and/or date when relevant; category of assessed quality as defined in clause9 of the sectional specification and, if required, screening sequence as defined in clause8 of the sectional specification; any ot

24、her particulars. Name (address) of responsible NAI (and possibly of body from which specification is available). 1 Number of IECQ detail specification, plus issue number and/or date. QC 790111-. 2 ELECTRONIC COMPONENT OF ASSESSED QUALITY IN ACCORDANCE WITH: 3 National number of detail specification.

25、 4 Generic specification: Publication 747-10/QC 700000 This box need not be used if national number repeats IECQ number. Sectional specification: Publication 748-11/QC 790100 and national references if different. BLANK DETAIL SPECIFICATION FOR: INTEGRATED CIRCUIT STATIC READ/WRITE MEMORIES 5 Type nu

26、mber(s) of the relevant device(s). Ordering information: see subclause1.2 of this standard. Mechanical description 7 Short description 6 Outline references: Standard package references should be given, IEC number (mandatory if available) and/or national number. Application: Function: Typical constru

27、ction: Si,monolithic, bipolar, MOS. Encapsulation: cavity or non-cavity. Comparison table of characteristics for variant products. Outline drawing may be transferred to or given with more details in clause8 of this standard. CAUTION: Electrostatic sensitive devices Terminal identification drawing sh

28、owing pin assignments, including graphical symbols. Categories of assessed quality From subclause2.6 of the generic specification. 8 Marking: letters and figures, or colour code. The detail specification shall prescribe the information to be marked on the device, if any. See subclause2.5 of generic

29、specification and/or subclause1.1 of this standard. Reference data Reference data on the most important properties to permit comparison between types. 9 Information about manufacturers who have components qualified to this detail specification is available in the current Qualified Products List.BSQC

30、790111:1993 BSI 10-1999 3 2 Application related description The following characteristics shall be given: nominal supply voltage; nominal current consumption; operating modes; electrical compatibility (if appropriate); It shall be stated whether the integrated circuit memory is electrically compatib

31、le with other particular integrated circuits or families of integrated circuits, or whether special interfaces are required. 3 Specification of the function 3.1 Block diagram The block diagram shall be sufficiently detailed to enable the individual functional units within the memory to be identified

32、 with their main input and output paths and the identification of their external connections (chip enable, address decode, programming .). The graphical symbol for the function shall be given. This may be obtained from a catalogue of standards of graphical symbols, or designed according to the rules

33、 of IEC617-12. 3.2 Identification and function of terminals All terminals shall be identified on the block diagram (supply terminals, address, data and control terminals). The terminal functions shall be indicated in a table as follows. 3.3 Functional description The following characteristics shall

34、be given: memory size: the total number of bits of information capable of being stored in the memory circuit; memory organization: the number of bits per word capable of being stored in the memory circuit; addressing mode (for example: multiplexed, latched, etc.); chip select 1)(if applicable); outp

35、ut enable 1)(if applicable); standby mode (if applicable); truth table (this table shall show the output states versus the different combinations of the address inputs, the select inputs, the read/write inputs and the data inputs). 4 Limiting values (absolute maximum rating system) See IEC 134. Thes

36、e values apply over the operating temperature range, unless otherwise specified. Unless otherwise specified, limiting values shall be given as follows: any cautionary statement unique to an individual integrated circuit shall be included, for example the handling of MOS circuits; any interdependence

37、 of limiting values shall be specified; all conditions for which the limiting values apply shall be stated; Terminal number Terminal symbol Terminal designation Function Function of terminal Input/output identification Type of output circuit 1) The chip select and the output enable shall be distingu

38、ished.BSQC790111:1993 4 BSI 10-1999 if transient overloads are permitted, their magnitude and duration shall be specified. All voltages are referenced to a designated reference terminal. 5 Operating conditions (within the specified operating temperature range) These conditions are not to be inspecte

39、d but may be used for quality assessment purposes. 6 Electrical characteristics The characteristics shall apply over the full operating temperature range, unless otherwise specified. Where the stated performance of the circuit varies over the operating temperature range, the values of the input and

40、output voltages, and their associated currents shall be stated at25 C and at the extremes of the operating temperature range. Values of current and voltage shall be given for each functionally different type of input and/or output. Special characteristics and timing requirements shall be specified.

41、6.1 Static characteristics All voltages are referenced to a designated reference terminal. Parameters (note 2) Symbols Min. a Max. a Unit Supply voltage V CC , V DD V Input voltages V I V Output voltages V O V Off-state voltage (note 1) V OZ V Output currents I O mA Input currents I I mA Power dissi

42、pation P D W Operating temperature T amband/or T case C Storage temperature T stg C NOTE 1Where appropriate. NOTE 2Any conditions such as time, frequency, temperature, mounting method, etc. shall be stated. a Algebraic values. Characteristics Symbols Min. Max. Unit Supply voltage V CC(note 1) V DD(n

43、ote 2) V V Data retention voltage (note 2) V DD (DR) V Low-level input voltage V IL V High-level input voltage V IH V Operating temperature T amband/or T case C NOTE 1Where appropriate, these values shall also be quoted under standby conditions. NOTE 2Where appropriate.BSQC790111:1993 BSI 10-1999 5

44、The following shall also be stated where applicable: where certain terminals may be used both as inputs and outputs then both conditions shall be specified. Characteristics Conditions (note 4) (note 5) Symbols Min. a Max. a Unit Supply currents (note 1) for: V CCmax. I CC I DD Where appropriate mA m

45、A Normal mode Power down Maximum supply current(s) for data retention mode (note1) V CCmax. V DD(DR) I DD (DR) mA High-level output voltage V CCmin. I OHA V OH V Low-level output voltage V CCmin. I OLA V OL V High-level input or leakage current V CCmax. V IHB I IH(1) 4A High-level input or leakage c

46、urrent (where appropriate) V CCmax. V IHA I IH(2) 4A Low-level input or leakage current V CC max. V ILA I IL(1) 4A Low-level input or leakage current V CCmax. V ILB I IL(2) 4A High-level output current (note 5) V CCmin. V OHB I OH 4A Low-level output current V CCmax. V OLA I OL mA High-level output

47、current leakage (note 2) V CCmax. V OHA I OHX 4A Low-level output current leakage (note 2) V CCmax. V OLB I OLX 4A High-level output leakage current as three-state outputs (if applicable) V CCmax. V OHB I OHZ 4A Low-level output leakage current as three-state outputs (if applicable) V CCmax. V OLA I

48、 OLZ 4A Output short circuit current (note 3) V CCmax. V O= 0 I OS 4A NOTE 1Where appropriate, these values shall also be quoted under standby conditions. NOTE 2I OHXand I OLXapply only to circuits having open-collector (or open-source/drain) outputs and in this case replace I OHand I OL . NOTE 3Duration to be specified. NOTE 4Where appropriate, V DDshall be used instead of V CC . NOTE 5These conditions shall be specified for the worst case of the relevant characteristic measurement. a Algebraic values.BSQC790111:1993 6 BSI 10-1999 6.2 Dynamic characteristics 6.3 Timing diagrams Timi