DLA DSCC-DWG-03021-2003 SEMICONDUCTOR DEVICE DIODE SILICON RECTIFIER MODULE HIGH VOLTAGE 1N5597 1N5600 1N5603 TX AND TXV《TX和TXV型1N5597 1N56001 N5603 高电压整流模块 整流硅二极管半导体器件》.pdf

1、 REVISIONS LTR DESCRIPTION DATE APPROVED Prepared in accordance with ASME Y14.100 Selected item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Roger Kissel DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OH http:/www.dscc.dla.mil/programs/mils

2、pec/docsearch.asp Original date of drawing CHECKED BY Alan Barone TITLE 9 June 2003 APPROVED BY Thomas M. Hess SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, MODULE, HIGH VOLTAGE, 1N5597, 1N5600, 1N5603, TX AND TXV SIZE A CODE IDENT. NO. 037Z3 DWG NO. 03021 REV PAGE 1 OF 14 AMSC N/A 5961-E071 DIST

3、RIBUTION STATEMENT A. Approved for public release; distribution is unlimited.MIL-PRF-19500/404 has been cancelled. This drawing may be used as a substitute. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHI

4、O SIZE A CODE IDENT NO. 037Z3 DWG NO. 03021 REV PAGE 2 1. SCOPE 1.1 Scope. This drawing describes the requirements for silicon, high voltage, rectifier modules. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Part or Identifying Number (PIN). The

5、complete PIN shall be as follows: 03021 - 1N5597 TX, TXV | | | Drawing number Device Quality level 1.2.1 Device types. The device type shall be as follows: Device type Figure number 03021-1N5597TX, TXV 1 03021-1N5600TX, TXV 1 03021-1N5600TX, TXV 1 1.2.2 Quality levels. The TX and TXV-suffix part sha

6、ll be as specified in MIL-PRF-19500 paragraph 3.3. 1.3 Ratings. Types VRWMIO= IFTC= 75C IFSMTC= 75C trrIR(surge)TC= 75C TJand TSTG1N5597 1N5600 1N5603 KV (pk) 10 5 5 A dc 1.0 (1) 2.0 (2) 5.0 (3) A dc 30 80 200 s 2 2 2 J 2 6 12 C -55 to +150 -55 to +150 -55 to +150 (1) Derate linearly by 13.3 mA dc/C

7、 from IO= 1.0 A dc at TC= +75C. Derate to zero at TC= +150C. (2) Derate linearly by 26.7 mA dc/C from IO= 2.0 A dc at TC= +75C. Derate to zero at TC= +150C. (3) Derate linearly by 66.7 mA dc/C from IO= 5.0 A dc at TC= +75C. Derate to zero at TC= +150C. 1.4 Primary electrical characteristics at TA= +

8、25C, unless otherwise indicated. Types VF atIF= rated IF(see 1.3) IR1 atVR= rated VRWM(see 1.3) IR2 atVR= rated VRWM TA= +100C (see 1.3) C VR= 100 V dc f = 0.1 to 0.15 MHz 1N5597 1N5600 1N5603 V dc Min Max 13 19 6 10 6 10 A dc Min Max 1 5 5 A dc Min Max 75 100 100 pF Min Max 5 30 7 30 15 40 Provided

9、 by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 03021 REV PAGE 3 2. APPLICABLE DOCUMENTS 2.1 Government documents. 2.1.1 Specifications, standards, and handbooks. The followin

10、g specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in

11、 the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-202 - Electronic And Electrical Component Parts MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated,

12、 copies of federal and military specifications, standards, and handbooks are available from the Defense Automation and Production Service (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following documents form a part of this d

13、ocument to the extent specified herein. Unless otherwise specified, the issues of the documents which are DoD adopted are those listed in the issue of the DoDISS cited in the solicitation. Unless otherwise specified, the issues of documents not listed in the DoDISS are the issues of the documents ci

14、ted in the solicitation (see 6.2). AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) D1868 - Standard Test Method for Detection and Measurement of Partial Discharge (Corona) Pulses in Evaluation of Insulation Systems. D3487 - Standard Specification for Mineral Insulating Oil Used in Electrical Appar

15、atus (Application for copies should be addressed to ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, Pennsylvania, USA 19428-2959.) SOCIETY OF AUTOMOTIVE ENGINEERS (SAE) AMS-C-26074 - Coatings, Electroless Nickel, Requirements for. (Application for copies should be addresse

16、d to SAE World Headquarters, 400 Commonwealth Drive, Warrendale, PA 15096-001.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable

17、laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be in accordance with MIL-PRF-19500, and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall

18、 be as specified in MIL-PRF-19500. 3.3 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBU

19、S, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 03021 REV PAGE 4 3.3.1 Internal construction. The rectifier module shall contain an assembly of series-connected discrete controlled avalanche diodes (arbitrarily designated D-1, D-2, and D-3 in tables I and II). Each diode shall be in a glass-to-metal, ce

20、ramic-to-metal, or fused metal oxide-to-metal hermetically sealed non-cavity package. The completed assembly of diodes and other internal structures shall be encapsulated in a plastic material which polymerizes to a rigid condition by virtue of a chemical cross-linking mechanism. The rectifier modul

21、e shall be free of voids either visible or as evidenced by failure to pass the environmental corona test specified. The rectifier module shall not internally include nor utilize component capacitors and/or resistors for compensation. Only those discrete diodes which have passed the tests in 4.3, tab

22、les I, and II shall be used in the rectifier module. Discrete diodes shall be TX or TXV screened devices. 3.3.2 External construction. Metal surfaces shall be nickel plated in accordance with AMS-C-26074 (class 3, grade A). Plastic surfaces shall be finished smooth, free of pits, cracks, and other i

23、mperfections. 3.3.3 Polarity. Marking shall be in accordance with MIL-PRF-19500. As an option to the polarity marking requirements, a diode graphic symbol or the words cathode terminal may be used. 3.4 Performance characteristics. Performance characteristics shall be in accordance with table III. 3.

24、5 Marking. The marking shall be in accordance with MIL-PRF-19500. It is not necessary that marking be on one line. Complete marking, which shall include part number, manufacturers identification, Commercial and Government Entity (CAGE) code, and lot date code, shall be included on the initial packag

25、ing. 3.6 Manufacturer eligibility. To be eligible to supply devices to this drawing, the manufacturer shall have an approved facility in accordance with MIL-PRF-19500 for at least one line and at least one qualified JAN device listed on QML-19500. In addition, all devices specified herein shall meet

26、 all requirements of MIL-PRF-19500 except qualification. It is prohibited for a manufacturer not listed on the DSCC drawing approval bulletin to mark devices with this drawing number. 3.7 Submission of certificate of compliance. A certificate of compliance shall be required from a manufacturer in or

27、der to be listed as a source of supply in 6.5. The certificate of compliance submitted to DSCC-VAC, prior to listing as a source of supply in 6.5, shall state that the manufacturers product meets the applicable requirements of MIL-PRF-19500 and the requirements herein. 3.8 Certificate of compliance.

28、 A certificate of compliance shall be required from manufacturers requesting to be a suggested source of supply. 3.9 Recycled, recovered, or environmentally preferable materials. Recycled, recovered, or environmentally preferable materials should be used to the maximum extent possible provided that

29、the material meets or exceeds the operational and maintenance requirements, and promotes economically advantageous life cycle costs. 3.10 Workmanship. The semiconductor shall be uniform in quality and free from any defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Sam

30、pling and inspection. Unless otherwise specified, sampling and inspection procedures shall be performed in accordance with MIL-PRF-19500, and as specified herein. 4.2 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and tables I, II, and III herein. 4.2.1 Grou

31、p A inspection. Group A inspection shall consist of the inspections and tests specified in table III. 4.2.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in paragraph 4.4.2.1. Electrical measurements (end-points) shall be i

32、n accordance with the applicable inspections of table III, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 03021 REV PAGE 5 4.2.2.1 Group B inspecti

33、on, table VIb of MIL-PRF-19500. Subgroup Method Condition 1 2026 Not applicable. 2 4066 VRWM= 0 V, IFSM= (see 1.3) ten surges, 8.3 ms IO= IOrated at TC= +75C. 3 1036 Intermittent life test (modules may be series connected and horizontally mounted in a dielectric fluid such as 3M Brand FC40 or equiva

34、lent, or oil in accordance with ASTM-D3487, controlled to maintain a case temperature of 75C minimum.) Time on = 50 min, time off = 10 min, duration = 340 cycles (340 hours). (For determining sample size, each module shallbe considered a test unit with resistive load.) IOduring time on: 1N5597 - 1 A

35、 dc 1N5600 - 2 A dc 1N5603 - 5 A dc. 4 Not applicable. 5 Not applicable. 6 1032 TA= +150C. 4.2.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-poin

36、ts) shall be in accordance with table III, subgroup 2 herein. Subgroup Method Condition 2 2036 Test condition D2 (stud torque), t = 3 s; torque for 1N5597 torque for 1N5603 = 36 inch-pound. 3 Not applicable. 4 1041 Reject criteria, a device with illegible marking, evidence of flaking or pitting or c

37、orrosion that will interfere with the application of the device will be considered a failure. 5 Not applicable. 6 1036 Intermittent life test (modules may be series connected and horizontally mounted in a dielectric fluid such as 3 Ms FC40 or equivalent, controlled to maintain a case temperature of

38、75C minimum.) Time on = 50 minutes, time off = 10 minutes, duration 1,000 cycles (1,000 hours). (For determining sample size, each module shall be considered a test unit with resistive load.) IOduring time on: 1N5597 - 1 A dc 1N5600 - 2 A dc 1N5603 - 5 A dc. Provided by IHSNot for ResaleNo reproduct

39、ion or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 03021 REV PAGE 6 4.3 Screening. Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be ma

40、de in accordance with table III herein. Devices that exceed the limits of table I herein shall not be acceptable. Screening shall be conducted on 100 percent of the discrete diode lot prior to assembly and encapsulation into rectifier modules. Screen (see table IV of MIL-PRF-19500) Measurement TX an

41、d TXV levels (1) Surge, see 4.3.2. (2) Peak Transient Reverse Power (table I) 9, 10 Not applicable 11 VF2and IR112 See 4.3.1 13 VF2= +0.1/-0.2 V dc IR1= 250 nA dc or 100 percent of initial value, whichever is greater, for D-1 (1N5597)and D-2 (1N5600). IR1= 500 nA dc or 100 percent of initial value,

42、whichever is greater, for D-3 (1N5603). Electrical endpoints, table II, all tests (1) Surge screening shall be performed anytime after screen 3 and before screen 10. (2) Shall be performed anytime after screen 3. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA= +125C, VRa

43、t rated (dc), IF= 0. 4.3.2 Surge screening. See method 4066 of MIL-STD-750. VRWM= 0, IO= 0, IFSM= 20 x IOrated (see 1.3) at TA= +25C, tp= 8.3 ms, 3 surges, duty factor = 1 percent maximum (half-sine or rectangular pulse of equivalent energy). 4.3.3 Internal corona screening. This 100-percent test sh

44、all be performed in accordance with 4.4.3 herein on the finished module. 4.4 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.4.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Prov

45、ided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 03021 REV PAGE 7 4.4.1 Reverse recovery time. Reverse recovery time (method 4031 of MIL-STD-750) shall be measured in a cir

46、cuit and with equipment as shown on figure 2. The pulse generator shall have a pulse repetition frequency of 1 kHz maximum, and a pulse width of 10 microseconds minimum. Recovery conditions: 0.5 ampere forward current to 1.0 ampere reverse current. Recovery time measured from the time the rectifier

47、begins to conduct in the reverse direction (crosses I = 0) until the reverse current recovers to -0.25 ampere. 4.4.2 Peak transient reverse power. The circuit on figure 3 or a similar circuit, at the option of the supplier, shall be used to apply a single cycle reverse power surge to discrete diodes

48、. The reverse power surge used to test discrete diodes may be applied in the form of a one-half sinusoidal pulse of 8.3 milliseconds duration. 4.4.3 Internal corona testing. Internal corona testing shall be conducted on all rectifier modules (see figure 4). The method of corona detection, measuremen

49、t and display shall conform to the following requirements: The terminals shall be connected together and connected to the high potential side of the corona test equipment. A test voltage of 25 KV(rms) at 60 Hz shall be applied between the terminals and the ground plane which shall be no more than 2 inches from the major diameter of the rectifier m