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本文(DLA DSCC-VID-V62 09606 REV A-2013 MICROCIRCUIT DIGITAL CMOS HEX VOLTAGE LEVEL SHIFTER FOR TTL TO CMOS OR CMOS TO CMOS OPERATION MONOLITHIC SILICON.pdf)为本站会员(cleanass300)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA DSCC-VID-V62 09606 REV A-2013 MICROCIRCUIT DIGITAL CMOS HEX VOLTAGE LEVEL SHIFTER FOR TTL TO CMOS OR CMOS TO CMOS OPERATION MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE APPROVED A Correct terminal connections in figure 2. - PHN 13-01-16 Thomas M. Hess CURRENT DESIGN ACTIVITY CAGE CODE 16236 HAS CHANGED NAMES TO: DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 Prepared in accordance with ASME Y14.24 Vendor item drawing REV PAGE REV PA

2、GE REV STATUS OF PAGES REV A A A A A A A A PAGE 1 2 3 4 5 6 7 8 PMIC N/A PREPARED BY Phu H. Nguyen DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO 43218-3990 Original date of drawing CHECKED BY Phu H. Nguyen TITLE MICROCIRCUIT, DIGITAL, CMOS HEX VOLTAGE LEVEL SHIFTER FOR TTL TO CMOS OR CMOS TO CMOS O

3、PERATION, MONOLITHIC SILICON YY MM DD 09-02-04 APPROVED BY Charles F. Saffle SIZE A CODE IDENT. NO. 16236 DWG NO. V62/09606 REV A PAGE 1 OF 8 AMSC N/A 5962-V039-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMB

4、US, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/09606 REV A PAGE 2 1. SCOPE 1.1 Scope. This drawing documents the general requirements of a high performance CMOS hex voltage level shifter for TTL to CMOS or CMOS to CMOS operation microcircuit, with an operating temperature range of -55C to +125C. 1

5、.2 Vendor Item Drawing Administrative Control Number. The manufacturers PIN is the item of identification. The vendor item drawing establishes an administrative control number for identifying the item on the engineering documentation: V62/09606 - 01 X E Drawing Device type Case outline Lead finish n

6、umber (See 1.2.1) (See 1.2.2) (See 1.2.3) 1.2.1 Device type(s). Device type Generic Circuit function 01 CD4504B-EP CMOS hex voltage level shifter for TTL to CMOS or CMOS to CMOS operation 1.2.2 Case outline(s). The case outlines are as specified herein. Outline letter Number of pins JEDEC PUB 95 Pac

7、kage style X 16 JEDEC MO-153 Plastic small outline package 1.2.3 Lead finishes. The lead finishes are as specified below or other lead finishes as provided by the device manufacturer: Finish designator Material A Hot solder dip B Tin-lead plate C Gold plate D Palladium E Gold flash palladium Z Other

8、 1.3 Absolute maximum ratings. DC supply voltage range, Voltage referenced to VSS terminal (VDD) -0.5 V to +20.0 V Input voltage range, all inputs -05 V to VCC+ 0.5 V Maximum DC input current, any one input . 10 mA Maximum power dissipation per package, (PD): TA= -55C to +100C . 500 mW TA= +100C to

9、+125C 1/ Maximum device dissipation per output transistor, for TA= full package temperature range (all package types) 100 mW Operating temperature range, (TA) . -55C to +125C Maximum package thermal impedance (JA) . 91.1C/W 2/ Storage temperature range, (TSTG) . -85C to +150C Maximum lead temperatur

10、e (during soldering) , at distance 1/16 1/32 inch (1.59 0.79 mm) from case for 10 s max +265C 1/ Derate linearly at 12 mW/C to 200 nW. 2/ The package thermal impedance is calculated in accordance with JESD 51-7. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro

11、m IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/09606 REV A PAGE 3 1.4. Recommended operating conditions. 3/ 4/ Supply voltage range, (for TA= full package temperature range) (VDD) +5.0 V to +18.0 V 2. APPLICABLE DOCUMENTS JEDEC SOLID STATE TECHNOLOGY

12、 ASSOCIATION (JEDEC) JEP95 Registered and Standard Outlines for Semiconductor Devices JESD51-7 High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages (Copies of these documents are available online at http:/www.jedec.org or from JEDEC Solid State Technology Association, 310

13、3 North 10th Street, Suite 240S, Arlington, VA 22201-2107). 3. REQUIREMENTS 3.1 Marking. Parts shall be permanently and legibly marked with the manufacturers part number as shown in 6.3 herein and as follows: A. Manufacturers name, CAGE code, or logo B. Pin 1 identifier C. ESDS identification (optio

14、nal) 3.2 Unit container. The unit container shall be marked with the manufacturers part number and with items A and C (if applicable) above. 3.3 Electrical characteristics. The maximum and recommended operating conditions and electrical performance characteristics are as specified in 1.3, 1.4, and t

15、able I herein. 3.4 Design, construction, and physical dimension. The design, construction, and physical dimensions are as specified herein. 3.5 Diagrams. 3.5.1 Case outline(s). The case outline(s) shall be as shown in 1.2.2 and figure 1. 3.5.2 Terminal connections. The terminal connections shall be

16、as shown in figure 2. 3.5.3 Block diagram. The block diagram shall be as shown in figure 3. _ 3/ For maximum reliability, nominal operating conditions should be selected so that operation is always within the recommended range. 4/ Use of this product beyond the manufacturers design rules or stated p

17、arameters is done at the users risk. The manufacturer and/or distributor maintain no responsibility or liability for product used beyond the stated limits. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO

18、 SIZE A CODE IDENT NO. 16236 DWG NO. V62/09606 REV A PAGE 4 TABLE I. Electrical performance characteristics. 1/ Test Symbol Conditions 2/ Limits at indicated temperatures (C) Unit VO(V) VIN(V) VCC(V) VCC(V) -55 -40 +85 +125 +25 Min Max Quiescent device current, IDDmax and ICCin CMOS-CMOS mode 0, 5 5

19、 5 1.5 1.5 1.5 1.5 1.5 mA 0, 10 5 10 2 2 2 2 2 0, 15 5 15 4 4 120 120 4 A 0, 20 5 20 20 20 600 600 20 Quiescent device current, ICCmax TTL-CMOS mode 0, 5 5 5 5 5 6 6 5 mA 0, 10 5 10 5 5 6 6 5 0, 15 5 15 5 5 6 6 5 Output low (sink) current, IOLmin 0.4 0, 5 5 0.64 0.61 0.42 0.36 0.51 mA 0.5 0, 10 10 1

20、.6 1.5 1.1 0.9 1.3 1.5 0, 15 15 4.2 4 2.8 2.4 3.4 Output low (source) current, IOHmin 4.6 0, 5 5 -0.64 -0.61 -0.42 -0.36 -0.51 2.5 0, 5 5 -2 -1.8 -1.3 -1.15 -1.6 9.5 0, 10 10 -1.6 -1.5 -1.1 -0.9 -1.3 13.5 0, 15 15 -4.2 -4 -2.8 -2.4 -3.4 Output voltage: low level, VOLmax 0, 5 5 0.05 0.05 V 0, 10 10 0

21、.05 0.05 0, 15 15 0.05 0.05 Output voltage: high level, VOHmin 0, 5 5 4.95 4.95 0, 10 10 9.95 9.95 0, 15 15 14.95 14.95 Input low voltage, VILmax 3/ TTL-CMOS 1 5 10 0.8 0.8 TTL-CMOS 1 5 15 0.8 0.8 CMOS-CMOS 1 5 10 1.5 1.5 CMOS-CMOS 1.5 5 15 1.5 1.5 CMOS-CMOS 1.5 10 15 3 3 Input high voltage, VIHmin

22、3/ TTL-CMOS 9 5 10 2 2 TTL-CMOS 13.5 5 15 2 2 CMOS-CMOS 9 5 10 3.5 3.5 CMOS-CMOS 13.5 5 15 3.5 3.5 CMOS-CMOS 13.5 10 15 7 7 Input current, IINmax 0, 18 18 0.1 0.1 1 1 0.1 A See footnote at end of the table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS

23、-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/09606 REV A PAGE 5 TABLE I. Electrical performance characteristics. 1/ Test Symbol Conditions 4/ VCC(V) VDD (V) Limits Unit Min Max Propagation delay: high to low From TTL to CMOS tPHLVDD VCC5 10 280 ns 5 15

24、280 From CMOS to CMOS VDD VCC5 10 240 5 15 240 10 15 140 From CMOS to CMOS VCC VDD10 5 550 15 5 550 15 10 140 Propagation delay: high to low From TTL to CMOS tPLHVDD VCC5 10 280 ns 5 15 280 From CMOS to CMOS VDD VCC5 10 240 5 15 240 10 15 140 From CMOS to CMOS VCC VDD10 5 400 15 5 400 15 10 120 Tran

25、sition time tTHL, tTLHAll modes 5 200 ns 10 100 15 80 Input capacitance CINAny input 7.5 pF 1. Testing and other quality control techniques are used to the extent deemed necessary to assure product performance over the specified temperature range. Product may not necessarily be tested across the ful

26、l temperature range and all parameters may not necessarily be tested. In the absence of specific parametric testing, product performance is assured by characterization and/or design. 2. Over recommended operating free air temperature range (unless otherwise noted). 3. Applies to the six input signal

27、s. For mode control (P13), only the CMOS-CMOS ratings apply 4. TA= 25C, Input tr, tf= 20 ns, CL= 50 pF, RL= 200 . Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/0

28、9606 REV A PAGE 6 Case X Dimensions Symbol Min Max Symbol Min Max A 1.20 e 0.65 BSC A1 0.05 0.15 E 4.30 4.50 b 0.19 0.30 E1 6.20 6.60 c 0.15 NOM L 0.50 0.75 D 4.90 5.10 Notes: 1. All linear dimensions are in millimeters. 2. This drawing is subject to change without notice. 3. Body dimensions do not

29、include mold flash or protrusion not to exceed 0.15. 4. Fall within JEDEC MO-153. FIGURE 1. Case outlines. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/09606 RE

30、V A PAGE 7 Pin No. Signal name Pin No. Signal name 1 VCC16 VDD2 AOUT15 FOUT3 AIN14 FIN4 BOUT13 SELECT 5 BIN12 EOUT6 COUT11 EIN7 CIN10 DOUT8 VSS9 DINFIGURE 2. Terminal connections. FIGURE 3. Block diagram. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,

31、-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 16236 DWG NO. V62/09606 REV A PAGE 8 4. VERIFICATION 4.1 Product assurance requirements. The manufacturer is responsible for performing all inspection and test requirements as indicated in their internal documentation. Such proc

32、edures should include proper handling of electrostatic sensitive devices, classification, packaging, and labeling of moisture sensitive devices, as applicable. 5. PREPARATION FOR DELIVERY 5.1 Packaging. Preservation, packaging, labeling, and marking shall be in accordance with the manufacturers stan

33、dard commercial practices for electrostatic discharge sensitive devices. 6. NOTES 6.1 ESDS. Devices are electrostatic discharge sensitive and are classified as ESDS class 1 minimum. 6.2 Configuration control. The data contained herein is based on the salient characteristics of the device manufacture

34、rs data book. The device manufacturer reserves the right to make changes without notice. This drawing will be modified as changes are provided. 6.3 Suggested source(s) of supply. Identification of the suggested source(s) of supply herein is not to be construed as a guarantee of present or continued

35、availability as a source of supply for the item. DLA Land and Maritime maintains an online database of all current sources of supply at http:/www.landandmaritime.dla.mil/Programs/Smcr/. Vendor item drawing administrative control number 1/ Device manufacturer CAGE code Vendor part number Top side mar

36、king V62/09606-01XE 01295 CD4504BMPWREP 4504BEP 1/ The vendor item drawing establishes an administrative control number for identifying the item on the engineering documentation. CAGE code Source of supply 01295 Texas Instruments, Inc. Semiconductor Group 8505 Forest Lane P.O. Box 660199 Dallas, TX 75243 Point of contact: U.S. Highway 75 South P.O. Box 84, M/S 853 Sherman, TX 75090-9493 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

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