DLA MIL PRF 19500 734A-2012 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER DARLINGTON TYPES 2N7569 2N7570 AND 2N7571 JAN JANTX JANTXV AND JANS.pdf

1、+ MILPRF19500/734A 16 October 2012 SUPERSEDING MILPRF19500/734 16 February 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPES 2N7569, 2N7570, AND 2N7571, JAN, JANTX, JANTXV AND JANS This specification is approved for use by all Departments and

2、 Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MILPRF19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, power darlington transistors. Four levels of prod

3、uct assurance are provided for each device type as specified in MILPRF19500. 1.2 Physical dimensions. The device package style is TO204AA (formerly TO3) in accordance with figure 1. 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Types PTRJC(2)VCBOand VCEXVCEOVEBOIBICTJand TSTGTA= +25C TC

4、= +25C (1) W W C/W V dc V dc V dc A dc A dc C 2N7569 6 175 1.0 350 300 4.0 2.5 20 65 to +200 2N7570 6 175 1.0 400 350 4.0 2.5 20 65 to +200 2N7571 6 175 1.0 450 400 4.0 2.5 20 65 to +200 (1) See figure 2 for temperature-power derating curves. (2) See figure 3 (thermal impedance graph). AMSC N/A FSC

5、5961Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime ATTN: VAC, P.O. Box 3990, Columbus, OH 432183990, or emailed to semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the

6、ASSIST Online database at https:/assist.dla.mil. The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 January 2013. INCH-POUND Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/73

7、4A 2 1.4 Primary electrical characteristics. Unless otherwise specified, TC= +25C. hFE1(1) hFE2(1) VBE(sat)VCE(sat)1VCE(sat)2Limits VCE= 5 V dc IC= 10 A dc VCE= 5V dc IC= 20 A dc IC= 15 A dc IB= 1.2 A dc IC= 15 A dc IB= 1.2 A dc IC= 20 A dc IB= 1.2 A dc Min Max 75 500 50 V dc 2.6 V dc 1.5 V dc 1.7 |

8、hfe| CoboPulse response (2) Limits VCE= 10 V dc IC= 1 A dc f = 1 MHz VCB= 10 V dc IE= 0 100 KHz f 1 MHz td tr ts tf Min Max 25 pF 150 375 s 0.1 s 0.3 s 1.2 s 0.3 (1) Pulsed (see 4.5.1). (2) See figure 4 for pulse response circuits. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this se

9、ction are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users a

10、re cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of

11、 this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MILPRF19500 Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MILSTD750 Test

12、Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.dla.mil/quicksearch or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191115094.) 2.3 Order of precedence. Unless otherwise no

13、ted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provid

14、ed by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/734A 3 FIGURE 1. Physical dimensions (TO204AA, formerly TO3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/734A 4 Symbol Dimensions

15、 Notes Inches Millimeters Min Max Min Max CD .875 22.23 2 CH .250 .450 6.35 11.43 HR .495 .525 12.57 13.34 HR1.131 .188 3.33 4.78 3 HT .060 .135 1.52 3.43 L1.050 1.27 4, 5 LD .038 .043 0.97 1.09 4, 5 LL .312 .500 7.92 12.70 4 MHD .151 .161 3.84 4.09 6 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 1

16、1.18 4, 7, 8 PS1.205 .225 5.21 5.72 4, 7, 8 S1 .655 .675 16.64 17.15 7 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2 Body contour is optional within zone defined by dimension CD. 3. At both ends. 4. Both terminals. 5. Dimension LD applies between L1and LL.

17、 Lead diameter shall not exceed twice dimension LD within dimension L1. Diameter is uncontrolled in dimension L1. 6. Two holes. 7. These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below the seating plane. When gauge is not used, measurement shall be made at sea

18、ting plane. 8. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 9. Terminal 1 is

19、the emitter, terminal 2 is base. The collector shall be electrically connected to the case. 10. In accordance with ASME Y14.5M, diameters are equivalent to symbology. FIGURE 1. Physical dimensions (TO204AA, formerly TO3) Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted

20、 without license from IHS-,-,-MILPRF19500/734A 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MILPRF19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authoriz

21、ed by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as specified in MILPRF19500 and as follows: IH The col

22、lector current applied to the device under test during the heating period. IM The measurement current applied to forward bias the junction for measurement of VBE. tH The duration of the applied heating power pulse. tSW Sample window time during which final VBEmeasurement is made. 3.4 Interface requi

23、rements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in MILPRF19500 and on figure 1 (TO204AA, similar to TO3) herein. 3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with MILSTD750, MILPRF19500, and her

24、ein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Polarity. The identification of terminals of the device package shall be as shown on figure 1. Terminal 1 shall be connected to the emitter and terminal 2 shall be connected

25、 to the base. The collector shall be electrically connected to the case. 3.5 Marking. Marking shall be in accordance with MILPRF19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I h

26、erein. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance

27、. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection

28、shall be in accordance with MILPRF19500, and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of ta

29、ble II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/

30、734A 6 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table EIV of MILPRF19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. S

31、creen (see table EIV of MILPRF19500) Measurement JANS JANTX and JANTXV 3c (1) Thermal impedance (see 4.3.1) Thermal impedance (see 4.3.1) 7 Optional. Optional. 9 ICEX1ICEX111 ICEX1and hFE2, ICEX1= 100 percent of initial value or 100 nA dc, whichever is greater. ICEX1and hFE2, ICEX1= 100 percent of i

32、nitial value or 100 nA dc, whichever is greater. 12 See 4.3.2 See 4.3.2 13 See subgroups 2 and 3 of table I herein. ICEX1= 100 percent of initial value or 50 nA dc, whichever is greater. hFE2= 15 percent of initial value. See subgroup 2 of table I herein. ICEX1= 100 percent of initial value or 100 n

33、A dc, whichever is greater. hFE2= 25 percent of initial value. 14 Required. Required. (1) This test shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. 4.3.1 Thermal impedance. The thermal impedance measuremen

34、ts shall be performed in accordance with test method 3131 of MILSTD750 using the guidelines in that test method for determining IH, IM, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s maximum. The thermal impedance limit used in 4.3, screen 3c, and table I, subgroup 2 herein

35、shall be set statistically by the supplier. See group E inspection (table II, subgroup 4) herein. 4.3.2 Power burn-in conditions. Power burn-in conditions shall be as follows: TJ= +175C minimum, VCBgreater than or equal to 25 V dc; TA= +30C maximum. 4.4 Conformance inspection. Conformance inspection

36、 shall be in accordance with MILPRF19500, and as specified herein. If alternate screening is being performed in accordance with MILPRF19500, a sample of screened devices shall be submitted to and pass the requirements of table I, subgroup 1 and 2 inspection only. Group B inspection in accordance wit

37、h subgroup 1 of table EVIB of MILPRF19500 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table EV of MILPRF19500 and table I herein. Electrical measurements (end-

38、points) shall be in accordance with table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/734A 7 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified f

39、or subgroup testing in table EVIA (JANS) or table EVIB (JAN, JANTX, and JANTXV) of MILPRF19500 and herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable step of 4.6 herein. 4.4.2.1 Product as

40、surance level JANS (table EVIA of MILPRF19500). Subgroup Method Conditions B4 1037 For solder die attach: 2,000 cycles, VCBgreater than or equal to 100 V dc. B5 1027 For eutectic die attach: VCBgreater than or equal to 100 V dc; adjust PTto achieve TJ= +175C minimum; TA= +30C maximum 4.4.2.2 Product

41、 assurance levels JAN, JANTX, and JANTXV (table EVIB of MILPRF19500). Subgroup Method Conditions B3 1027 For eutectic die attach: VCBgreater than or equal to 25 V dc; adjust PTto achieve TJ= +175C minimum; TA= +30C maximum B3 1037 For solder die attach: 2,000 cycles, VCBgreater than or equal to 100

42、V dc. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table EVII of MILPRF19500 and as follows herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requ

43、irements shall be in accordance with the applicable step of table II herein. Subgroup Method Conditions C2 2036 Test condition A; weight = 10 pounds; time = 15 s. C5 3131 See 4.3.1, RJC= 1.0C/W. C6 1027 For eutectic die attach: VCBgreater than or equal to 100 V dc; adjust PTto achieve TJ= +175C mini

44、mum; TA= +30C maximum, 1,000 hours minimum. C6 1037 For solder die attach: 6,000 cycles, VCBgreater than or equal to 100 V dc. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in appendix E, table EIX of MILPRF

45、19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with the applicable step of 4.6 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appro

46、priate tables and as follows. 4.5.1 Pulse response measurements. The conditions for pulse response measurement shall be as specified in section 4 of MILSTD750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/734A 8 4.6 Delta measurements.

47、 The requirements for delta measurements for groups B, C, and E shall be as specified below. Steps Inspection (1) (2) (3) (4) (5) MILSTD750 Symbol Limits Unit Method Conditions Min Max 1 Collector to base cutoff current 3036 Bias condition D ICBO 100 percent of initial value or 100 nA, whichever is

48、greater. 2N7569 VCB= 350 V dc 2N7570 VCB= 400 V dc 2N7571 VCB= 450 V dc 2 Forward current transfer ratio 3076 VCE= 5 V dc; IC= 20 A dc; pulsed (see 4.5.1) hFE225 percent change from initial reading. 3 Saturation voltage, collector to emitter 3071 IC= 15 A dc; IB= 1.2 A dc, pulsed (see 4.5.1) VCE(sat)1200 mV change from previously measured value. (1) Devices which exceed the group A limits for this test shall not be acceptable. (2) The delta electrical measurements for group B, product assurance level JANS shall be as follows: a. In addi