DLA MIL-M-38510 135 G-2010 MICROCIRCUITS LINEAR LOW OFFSET OPERATIONAL AMPLIFIERS MONOLITHIC SILICON.pdf

1、 INCH-POUND MIL-M-38510/135G22 March 2010 SUPERSEDING MIL-M-38510/135F 8 April 2008 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, LOW OFFSET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON Reactivated after 5 November 2003 and may be used for new and existing designs and acquisitions This specification i

2、s approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-38535. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, low

3、offset operational amplifiers. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 (see 6.4). 1.2 Part or Identifying Number (

4、PIN). The PIN is in accordance with MIL-PRF-38535 and as specified herein. 1.2.1 Device types. Devices may be monolithic or they may consist of two separate independent die. The device types are as follows: Device type Circuit 01 Single operational amplifier, ultra low offset, internally compensated

5、. 02 Single operational amplifier, low offset, internally compensated. 03 Single operational amplifier, ultra low offset, internally compensated, ultra low noise. 04 Dual operational amplifier, low offset, ultra low noise internally compensated. 05 Single operational amplifier, ultra low offset, int

6、ernally compensated, ultra low noise, broadband. 06 Single operational amplifier, ultra low offset, internally compensated, ultra low noise. 1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535. 1.2.3 Case outline. The case outlines are as designated in MIL

7、-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-lineG MACY1-X8 8 Can P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier Comments, suggestions, or questions on this document should be addressed

8、to: Defense Supply Center Columbus, ATTN: DSCC-VAS, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to lineardla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil. AMSC N/A FSC

9、5962 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/135G 21.3 Absolute maximum ratings. Supply voltage (VCC) . 22 V Input voltage (VIN) . VCCDifferential input voltage range: Device types 01 and 02 30 V Device types 03, 04, 05, and 06 .

10、0.7 V 1/ Output short-circuit duration . 2/ Lead temperature (soldering, 60 seconds) +300C Storage temperature range -65C to +150C Junction temperature (TJ) +175C 3/ Maximum power dissipation (PD) . 500 mW 4/ 1.4 Recommended operating conditions. Supply voltage range (VCC): Device types 01 and 02 4.

11、5 V dc to 20.0 V Device types 03, 04, 05, and 06 . 4.5 V dc to 18.0 V Ambient operating temperature range (TA) -55C to +125C 1.5 Power and thermal characteristics. Case outlines Maximum allowable power dissipation Maximum JCMaximum JAC 400 mW at TA= +125C 28C/W 120C/W G 330 mW at TA= +125C 60C/W 150

12、C/W P 400 mW at TA= +125C 28C/W 120C/W 2 400 mW at TA= +125C 20C/W 120C/W 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or rec

13、ommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. _

14、 1/ If the differential input voltage exceeds 0.7 V, the input current should be limited to 10 mA. 2/ Output may be shorted to ground indefinitely at VS= 15 volts, TA= 25C. Temperature and supply voltages shall be limited to ensure dissipation rating is not exceeded. 3/ For short term test (in the s

15、pecific burn-in and steady-state life test configuration when required and up to 168 hours maximum), TJ= 175C. 4/ Maximum power dissipation versus ambient temperature. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/135G 32.2 Government d

16、ocuments. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFEN

17、SE SPECIFICATIONS MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard, Microcircuits. MIL-STD-1835 - Electronic Component Case Outlines. (Copies of these documents are available online at htt

18、ps:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in contract, in the event of a conflict between the text of this document and the references

19、cited herein (except for related specification sheets), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Qualification. Microcircuits furnished under this speci

20、fication sheet shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.3 and 6.3). 3.2 Item requirements. The individual item requirements shall be in accordance with MIL-P

21、RF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensi

22、ons shall be as specified in MIL-PRF-38535 and herein. 3.3.1 Circuit diagram and terminal connections. The circuit diagram and terminal connections shall be as specified on figure 1. 3.3.2 Schematic circuits. The schematic circuits shall be maintained by the manufacturer and made available to the qu

23、alifying activity and the preparing activity upon request. 3.3.3 Case outlines. The case outlines shall be as specified in 1.2.3. 3.4 Lead material and finish. The lead material and finish shall be in accordance with MIL-PRF-38535 (see 6.6). 3.5 Electrical performance characteristics. The electrical

24、 performance characteristics are as specified in table I, and unless otherwise specified, apply over the full recommended ambient operating temperature range for supply voltages from 4.5 V dc to 20 V dc for device types 01 and 02 and for supply voltages from 4.5 V dc to 18 V dc for device types 03,

25、04, 05, and 06. Unless otherwise specified, source resistance (RS) shall be 50 ohms for all tests. 3.5.1 Offset null circuits. The nulling inputs shall be capable of being nulled 0.5 mV beyond the specified offset voltage limits for 55C TA 125C using the circuit on figure 2. 3.5.2 Instability oscill

26、ations. The devices shall be free of oscillations when operated in the test circuits of this specification sheet. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/135G 4TABLE I. Electrical performance characteristics. Test Symbol Condition

27、s 1/ VCC= 15 V, unnulled, see figure 3 and reference 3.5 herein, unless otherwise specified Device type Limits Unit Min Max Input offset voltage VIO2/ 3/ 4/ 01,03,05,06 -25 25 V See figure 4, TA= 25C 02 -75 75 04 -80 80 2/ 3/ 01,03,05,06 -60 60 -55C TA+125C 02 -200 200 04 -180 180 End-point limit 4/

28、 01,03,05,06 -100 100 02 -175 175 04 -180 180 Input offset voltage temperature sensitivity VIO/T 01,03,05,06 -0.6 0.6 V/C 02 -1.3 1.3 04 -1.0 1.0 Input bias current +IIBTA= 25C 2/ 01 -2 2 nA 02 -3 3 03,04,05,06 -40 40 -55C TA+125C 2/ 01 -4 4 02 -6 6 03,04,05,06 -60 60 End-point limit 4/ 01 -3 3 02 -

29、4.5 4.5 03,04,05,06 -50 50 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/135G 5TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ VCC= 15 V, unnulled, see figure 3 and ref

30、erence 3.5 herein, unless otherwise specified Device type Limits Unit Min Max Input bias current -IIBTA= 25C 2/ 01 -2 2 nA 02 -3 3 03,04,05,06 -40 40 -55C TA+125C 2/ 01 -4 4 02 -6 6 03,04,05,06 -60 60 End-point limit 4/ 01 -3 3 02 -4.5 4.5 03,04,05,06 -50 50 Input offset current IIOTA= 25C 2/ 01 -2

31、2 nA 02 -2.8 2.8 03,04,05,06 -35 35 -55C TA+125C 2/ 01 -4 4 02 -5.6 5.6 03,04,05,06 -50 50 Power supply rejection ratio +PSRR +VCC= 20 V to 5 V, -VCC= -15 V, TA= 25C 01,02 -10 10 V/V +VCC= 18 V to 5 V, -VCC= -15 V, TA= 25C 03,04,05,06 -10 10 -PSRR -VCC= -20 V to -5 V, +VCC= 15 V, TA= 25C 01,02 -10 1

32、0 -VCC= -18 V to -5 V, +VCC= 15 V, TA= 25C 03,04,05,06 -10 10 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/135G 6TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ VCC= 1

33、5 V, unnulled, see figure 3 and reference 3.5 herein, unless otherwise specified Device type Limits Unit Min Max Power supply rejection ratio +PSRR +VCC= 20 V to 5 V, -VCC= -15 V, -55C TA+125C 01,02 -20 20 V/V +VCC= 18 V to 5 V, -VCC= -15 V, -55C TA+125C 03,04,05,06 -16 16 -PSRR -VCC= -20 V to -5 V,

34、 +VCC= 15 V, -55C TA+125C 01,02 -20 20 -VCC= -18 V to -5 V, +VCC= 15 V, -55C TA+125C 03,04,05,06 -16 16 PSRR VCC= 4.5 V to 20 V, TA+25C 01,02 -10 10 VCC= 4.5 V to 18 V, TA+25C 03,04,05,06 -10 10 VCC= 4.5 V to 20 V, -55C TA+125C 01,02 -20 20 VCC= 4.5 V to 18 V, -55C TA+125C 03,04,05,06 -16 16 Common

35、mode rejection mode CMRR VCM= 13 V, TA+25C 01,02 110 dB VCM= 11 V, TA+25C 03,04,05,06 114 VCM= 13 V, -55C TA+125C 01,02 106 VCM= 10 V, -55C TA+125C 03,04,05,06 108 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-3

36、8510/135G 7TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ VCC= 15 V, unnulled, see figure 3 and reference 3.5 herein, unless otherwise specified Device type Limits Unit Min Max Adjustment for input offset VIOAdj(+) TA+25C 2/ All 0.5 mV VIOAdj(-) -0.5 Output shor

37、t circuit current IOS(+) t 25 ms 5/ 03,05,06 -70 mA -55C TA+125C 04 -60 t 25 ms 5/ TA= +25C, +125C 01,02 -65 t 25 ms 5/ TA= -55C 01,02 -70 IOS(-) t 25 ms 5/ -55C TA+125C 03,04,05,06 70 t 25 ms 5/ TA= +25C, +125C 01,02 65 t 25 ms 5/ TA= -55C 01,02 70 Supply current ICCTA= +25C 2/ 6/ 01,02 4 mA 03,04,

38、05,06 5 -55C TA+125C 2/ 6/ 01,02 5 03,04,05,06 6 Output voltage swing (minimum) VOPRL= 1 k, -55C TA+125C 01,02 -10 10 V RL= 600 , -55C TA+125C 03,04,05,06 -10 10 RL= 2,000 , 01,02 -12 12 -55C TA+125C 03,04,05,06 -11.5 11.5 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction o

39、r networking permitted without license from IHS-,-,-MIL-M-38510/135G 8TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ VCC= 15 V, unnulled, see figure 3 and reference 3.5 herein, unless otherwise specified Device type Limits Unit Min Max Open loop voltage gain (si

40、ngle ended) AVSTA= +25C 7/ 01 300 V/mV 02 200 03,04, 05,06 1,000 -55C TA+125C 7/ 01 200 02 150 03,04, 05,06 600 Slew rate SR(+) VIN= 5 V, AV= 1, TA= +25C, see figure 5 01,02 .08 V/s and SR(-) 03,04, 06 1.7 VIN= 1 V, AV= 5, TA= +25C, see figure 5 05 11 Input noise voltage density En fO= 10 Hz, TA= +2

41、5C, 01,02 18 nV / see figure 6 03,05 5.5 Hz06 8 04 6.0 fO= 100 Hz 01,02 14 03,05 4.0 06 5.0 04 5.0 fO= 1 kHz 01,02 12 03,05 3.8 06 4 04 3.9 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/135G 9TABLE I. Elec

42、trical performance characteristics Continued. Test Symbol Conditions 1/ VCC= 15 V, unnulled, see figure 3 and reference 3.5 herein, unless otherwise specified Device type Limits Unit Min Max Low frequency input noise voltage Enpp fO= 0.1 Hz to 10 Hz, TA= +25C, see figure 7 01,02 0.6 VPP03,05 0.18 06

43、 0.375 04 0.20Input noise current density In fO= 10 Hz, TA= +25C, see figure 6 03,04, 05 5.66 pA / Hz 06 35 fO= 100 Hz, TA= +25C, see figure 6 03,05 1.88 04 2.1 06 18 fO= 1 kHz, TA= +25C, see figure 6 03,05 0.84 04 0.89 06 5 1/ For devices marked with the “Q” certification mark, the parameters liste

44、d herein shall be guaranteed if not tested to the limits specified in accordance with the manufacturers QM plan. 2/ Tested at VCM= 0 V, VCC= 15 V. 3/ Due to the inherent warm-up drift of types 01, 03, 04, 05, and 06, testing shall occur no sooner than 5 minutes after application of power. 4/ Refer t

45、o table IV for end-point parameters. 5/ Continuous short circuit limits are considerably less than the indicated test limits since maximum power dissipation cannot be exceeded. 6/ For device type 04, ICCis for each amplifier. 7/ VOUT= 0 to +10 for AVS(+)and VOUT= 0 to -10 for AVS(-). RL= 2,000 . 3.6

46、 Electrical test requirements. Electrical test requirements for each device class shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table III. 3.7 Marking. Marking shall be in accordance with MIL-PRF-38535. 3.8 Microcircuit group assignment. The de

47、vices covered by this specification sheet shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510/135G 10TABLE II. Electrical test requirements. Subgroups (see table III) M

48、IL-PRF-38535 test requirements Class S devices Class B devices Interim electrical parameters 1 1 Final electrical test parameters 1/ 1, 2, 3, 4, 7 1, 2, 3, 4, 7 Group A test requirements 2/ 1, 2, 3, 4, 5, 6, 7, 9 1, 2, 3, 4, 5, 6, 7, 9 Group B electrical test parameters when using the method 5005 QCI option 1