DLA MIL-PRF-19500 102 B-2013 SEMICONDUCTOR DEVICE TRANSISTORS NPN SILICON HIGH-POWER TYPES 2N1016B 2N1016C AND 2N1016D JAN.pdf

1、 MIL-PRF-19500/102B 23 August 2013 SUPERSEDING MIL-S-19500/102A 29 December 1966 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D JAN This specification is approved for use by all Departments and Agencies of the Departmen

2、t of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a high-power, NPN, silicon transistor. One level of product assurance is provided for

3、each device type. 1.2 Physical dimensions. See figure 1. 1.3 Maximum ratings. Unless otherwise specified TA= +25C.Types PTTC= +45C (1) RJCVCBOVEBOVCEOICTJand TSTG2N1016B 2N1016C 2N1016D W 150 150 150 C/W 0.7 0.7 0.7 V dc 100 150 200 V dc 25 25 25 V dc 100 150 200 A dc 7.5 7.5 7.5 C -65 to +150 (1) D

4、erate linearly 1.428 W/C for TC +45C. For temperature-power derating curves, see figure 2. 1.4 Primary electrical characteristics. Unless otherwise specified TA= +25C. hFEat VCE= 4.0 V dc VCE(sat)IC= 5 A dc IB= 1 A dc Limits hFE1 IC= 2.0 A dc hFE2 IC= 5.0 A dc hfe IC= 5 A dc fhfeIC= 5 A dc kHz 20 V

5、dc Min 20 10 5 Max 80 35 2.5 AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to ve

6、rify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. Inactive for new design after 7 June 1999. The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 November 2013. Provided by IHSNot for

7、 ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/102B 2 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. See NBS Handbook H28. 5/16 24 UNF-2A 4. Two leads. 5. Reference point for temperature measurement. 6. The coll

8、ector shall be internally connected to the mounting base. FIGURE 1. Physical dimensions. Symbol Dimensions Notes Inches Millimeters Min Max Min Max A 1.24 1.28 31.5 32.51 B 1.130 28.7 C .50 .56 12.70 14.22 D .55 .58 13.97 14.73 E .045 .055 1.14 1.40 4 F .73 .80 18.54 20.32 G .07 .14 1.78 3.56 H .13

9、.19 3.30 4.83 J .014 .024 0.36 0.61 K .14 .17 3.56 4.32 L .10 .14 2.54 3.56 M .48 .52 12.19 13.21 N .35 .40 8.89 10.16 P .09 .11 2.29 2.79 4 R .050 .060 1.27 1.52 S .81 .85 20.57 21.59 T 3 U .14 .17 3.56 4.32 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from I

10、HS-,-,-MIL-PRF-19500/102B 3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as exam

11、ples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications,

12、 standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500

13、 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robb

14、ins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, howeve

15、r, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products th

16、at are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MI

17、L-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 herein. 3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500. Where a choice of lead finish is desired, it shall be specified in

18、the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified

19、 in table I herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for

20、 ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/102B 4 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Conformance inspection (see 4.3 and ta

21、ble I). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of t

22、he specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.3 Thermal impedance. The thermal impedanc

23、e measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.3 Conformance inspection. Conformance i

24、nspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.3.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.3.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specif

25、ied for subgroup testing in table E-VIB (JAN) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition B3 1027 VCB= 30 V dc, IC= 2.39 A dc 4.3.3 Group C inspection. Group C inspection shall be conducted i

26、n accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Test condition A; weight = 5 pounds 1 ounce, application tim

27、e = 15 s Test condition D2; torque = 40 inch-pound; application time = 15 s. Test condition D1; torque = 5 in-oz; application time = 15 s; tubulated leads only. C5 3151 RJC(see 1.3). C6 1026 1,000 hours, VCB= 30 V dc, power and ambient temperature shall be applied to the device to achieve TJ= +150C

28、minimum, and minimum power dissipation of 75 percent of max rated PT(see 1.3 herein); n = 45, c = 0. The sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. Provide

29、d by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/102B 5 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II

30、 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in se

31、ction 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/102B 6 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical 2071 examination Subgrou

32、p 2 Thermal impedance 2/ 3131 See 4.2.3 ZJXC /W Breakdown voltage, collector to emitter 3011 Bias condition D, IC= 200 mA dc V(BR)CEO2N1016B 100 V dc 2N1016C 150 V dc 2N1016D 200 V dc Collector to emitter 3041 Bias condition A, VEB= -1.5 V dc, ICEX1cutoff current 2N1016B VCE= 100 V dc 1.0 mA dc 2N10

33、16C VCE= 150 V dc 1.0 mA dc 2N1016D VCE= 200 V dc 1.0 mA dc Collector to base 3037 Bias condition D, VEB= 1.5 V dc, ICBOcutoff current 2N1016B VCB= 100 V dc 1.0 mA dc 2N1016C VCB= 150 V dc 1.0 mA dc 2N1016D VCB= 200 V dc 1.0 mA dc Emitter to base cutoff current 3061 Bias condition D, VEB= 25 V dc, I

34、EBO11.0 mA dc Collector to emitter voltage (saturated) 3071 IC= 5 A dc, IB= 1 A dc VCE(sat)1 2.5 V dc Base emitter voltage (saturated) 3066 Test condition A, IC= 5 A dc, IB= 1 A dc VBE(sat)1 4.0 V dc Forward-current 3076 VCE= 4 V dc, IC= 2 A dc hFE120 80 transfer ratio Forward-current 3076 VCE= 4 V

35、dc, IC= 5 A dc hFE210 35 transfer ratio Forward-current 3076 VCE= 4 V dc, IC= 7.5 A dc hFE36 20 transfer ratio See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/102B 7 TABLE I. Group A inspection. Inspection

36、1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 2 - continued Small-signal short- circuit forward-current transfer ratio 3206 VCE= 4 V dc, IC= 5 A dc hfe5 Small-signal short- circuit forward-current transfer ratio cutoff frequency 3301 VCE= 4 V dc, IC= 5 A dc fhfe20 kHz Subgroup

37、 3 High temperature operation TC= +150 Emitter to base cutoff current 3061 Bias condition D, VEB= 25 V dc IEBO210 mA dc Collector to emitter 3041 Bias condition A, VEB= -1.5 V dc ICEX2cutoff current 2N1016B VCE= 100 V dc 10 mA dc 2N1016C VCE= 150 V dc 10 mA dc 2N1016D VCE= 200 V dc 10 mA dc Low-temp

38、erature operation TC= -55C Forward-current 3076 VCE= 4 V dc, IC= 5 A dc hFE410 35 transfer ratio Subgroup 4 Pulse response IC= 5 A dc, VEB= 6 V dc, VCE= 12 V dc; IB1and IB2= 1.5 A dc (See figure 2) td+ tr10 s Pulse response IC= 5 A dc, VEB= 6 V dc, VCE= 12 V dc; IB1and IB2= 1.5 A dc (See figure 3) t

39、s+ tf15 s Subgroups 5, 6, and 7 Not applicable 1/ For sampling plan, see MIL-PRF-19500. 2/ This test required for the following end-point measurements only: Group B, subgroups 2 and 3 (JAN). Group C, subgroup 2 and 6. Group E, subgroup 1. Provided by IHSNot for ResaleNo reproduction or networking pe

40、rmitted without license from IHS-,-,-MIL-PRF-19500/102B 8 TABLE II. Group E inspection (all quality levels) - for qualification only. Inspection MIL-STD-750 Qualification Method Conditions Subgroup 1 Temperature cycling (air to air) 1051 Test condition C, 500 cycles. 45 devices c = 0 Hermetic seal F

41、ine leak Gross leak 1071 Electrical measurements See table I, subgroup 2 herein. Subgroup 2 Steady-state operating life 1026 VCB= 30 V dc, 6,000 cycles. Adjust device current, or power, to achieve a minimum TJof 100C. 45 devices c = 0 Electrical measurements See table I, subgroup 2 herein. Subgroup

42、4 Thermal impedance curves 3131 See MIL-PRF-19500, table E-IX, group E, subgroup 4. Sample size N/A Subgroup 5 Not applicable Subgroup 8 45 devices c = 0 Reverse stability 1033 Condition B. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-1950

43、0/102B 9 NOTES: 1. Top curve is thermal runaway loci and cannot be used as a derate design curve since it exceeds the maximum ratings for this part. Operating under this curve using these mounting conditions assures the device will not have a thermal runaway. This is the true inverse of the worst ca

44、se thermal resistance value extrapolated out to the thermal runaway point. 2. Derate design curve constrained by the maximum junction temperature (TJ +150C) and power rating specified. (See 1.3 herein.) 3. Derate design curves chosen at TJ +125C, and +110C to show power rating where most users want

45、to limit TJin their application. FIGURE 2. Derating for all devices. 02040608010012014016025 50 75 100 125 150 175DCOperationMaximumRating (W)Tc (C) (Case) Tc=25C 2N1016, Tj=150C max.Note: Max Finish-Alloy Temp = 175.0CTemperature-Power Derating CurveDC OperationThermal Resistance Junction to Case =

46、 0.700C/WProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/102B 10 FIGURE 3. Pulse response test circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/102B 11 5. PACKAGING

47、 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packag

48、ing requirements. Packaging requirements are maintained by the Inventory Control Points packaging activities within the Military Service or Defense Agency, or within the Military Services system commands. Packaging data retrieval is available from the managing Military Departments or Defense Agencys automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory. The not