DLA MIL-PRF-19500 124 L-2011 SEMICONDUCTOR DEVICE DIODE SILICON VOLTAGE REGULATOR TYPES 1N2970B THROUGH 1N2977B 1N2979B 1N2980B 1N2982B 1N2984B THROUGH 1N2986B 1N2988B THROUGH 1N290.pdf

1、 MILPRF19500/124L 24 August 2011 SUPERSEDING MILPRF19500/124K 17 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR TYPES 1N2970B THROUGH 1N2977B, 1N2979B, 1N2980B, 1N2982B, 1N2984B THROUGH 1N2986B, 1N2988B THROUGH 1N2993B, 1N2995B, 1N2997B, 1N2999B THRO

2、UGH 1N3005B, 1N3007B, 1N3008B, 1N3009B, 1N3011B, 1N3012B, 1N3014B, 1N3015B, PLUS RB TYPES, 1N3993A THROUGH 1N3998A, AND RA TYPES, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the produ

3、ct described herein shall consist of this specification sheet and MILPRF19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for 10 watt, silicon voltage regulator diodes: A and B type (standard polarity); RA and RB type (reverse polarity). Four levels of product assuran

4、ce are provided for each device type as specified in MILPRF19500. 1.2 Physical dimensions. See figure 1 (DO4). 1.3 Maximum ratings. Maximum ratings are as shown in columns 4, 8, and 10 of the test ratings table herein and as follows: 65C TJ +175C; PT= 10 W at TC= +55C; derate at .083 W/C above +55C.

5、 65C TSTG +200C. 1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 2, 9, 12, and 14 of the test ratings table herein, and as follows: Thermal resistance (RJC) = 12C/W maximum. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section a

6、re specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are caut

7、ioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. AMSC N/A FSC 5961 Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbu

8、s, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil. INCHPOUND The documentation and process conversion measures necessary to comply

9、with this revision shall be completed by 25 November 2011. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/124L 2 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handb

10、ooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MILPRF19500 Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDA

11、RDS MILSTD750 Test Methods for Semiconductor Devices. FEDERAL STANDARDS FEDSTDH28 ScrewThread Standards for Federal Services. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 R

12、obbins Avenue, Building 4D, Philadelphia, PA 191115094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, howe

13、ver, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MILPRF19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products th

14、at are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as speci

15、fied in MILPRF19500. The symbols used herein are listed in 6.5. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MILPRF19500, and herein on figure 1 (DO4). 3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance wi

16、th MILPRF19500, MILSTD750, and herein. Where a choice of lead finish is desired, it shall be specified in the contract (see 6.2). 3.4.2 Polarity. The polarity of device types shall be as follows: a. Device types 1N2970B through 1N3015B and 1N3993RA through 1N3998RA shall have the anode connected to

17、the stud (term 2 of figure 1). b. Device types 1N2970RB through 1N3015RB and 1N3993A through 1N3998A shall have the cathode connected to the stud (term 2 of figure 1) (see 3.6). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/124L 3 Symbo

18、l Dimensions Notes Inches Millimeters Min Max Min Max C .250 6.35 5 CD .255 .424 6.48 10.77 6 CH .300 .405 7.62 10.29 C1.012 .065 0.30 1.65 5 HF .424 .437 10.77 11.1 6 HT1.075 .175 1.91 4.45 7 HT2.060 .175 1.52 4.45 7 OAH .600 .800 15.24 20.32 SD SL .422 .453 10.72 11.51 SU .078 1.98 8 UD .163 .189

19、4.14 4.80 T .060 .095 1.52 2.41 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. See 3.4.2 for the polarity of the terminals. 3. Threads shall be 1032 UNF2A in accordance with FEDSTDH28. Maximum pitch diameter (SD) of plated threads shall be basic pitch diam

20、eter .1697 inch (4.31 mm). 4. Device shall not be damaged by a torque of 15 inchpounds applied to a 1032 UNF2B nut assembled on thread. 5. The angular orientation and peripheral configuration of terminal 1 is undefined, however, the major surfaces over dimension C and C1shall be flat. 6. Dimension C

21、D can not exceed dimension HF. 7. A chamfer or undercut on one or both ends of the hex portion is optional; minimum base diameter at seating plane .403 inch (10.24 mm). 8. Length of incomplete or undercut threads UD. 9. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE

22、1. Physical dimensions (DO4). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/124L 4 3.5 Marking. Devices shall be marked as specified in MILPRF19500. 3.6 Reverse polarity. Reverse polarity units (see 3.4.2.a and 3.4.2.b) shall be marked

23、with an “R“ preceding the “A“ or “B“ in the type designation, as applicable. 3.7 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classific

24、ation of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL

25、PRF19500. 4.3 Screening (JANS, JANTXV, AND JANTX levels only). Screening shall be in accordance with table EIV of MILPRF19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable

26、. Screening (see table E-IV of MILPRF19500) Measurement JANS level JANTXV and JANTX level 9 IR1and VZ(for devices with VZ(nom) 10 V dc; see column 2 of table III herein) Not applicable 11 IR1and VZ; IR1= 100 percent of initial value or 1 percent of column 12 of table III herein, whichever is greater

27、, VZ= 2.5 percent of initial value (for devices with VZ(nom) 10 V dc, see column 2 of table III herein) IR1and VZ12 See 4.3.1 See 4.3.1 13 Subgroups 2, 3, and 4 of table I herein; IR1= 100 percent of initial value or 1 percent of column 12 of table III herein, whichever is greater; VZ= 2.5 percent o

28、f initial value Subgroup 2 of table I herein; IR1= 100 percent of initial value or 1 percent of column 12 of table III herein, whichever is greater; VZ= 2.5 percent of initial value 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ = 165C minimum with IZnot to exceed IZin c

29、olumn 15 of table III herein; VZ= column 2 of table III herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MILPRF19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table EIV of MILPRF19500 and table I herein. End-point electr

30、ical measurements shall be in accordance with the applicable steps of table II herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/124L 5 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the condition

31、s specified for subgroup testing in table EVIa (JANS) and table EVIb (JAN, JANTX, and JANTXV), of MILPRF19500, and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table II herein. 4.4.2.1 Product quality level JANS (table EV

32、Ia of MILPRF19500). Subgroup Method Condition B2 2026 Dwell time = 10 1 s; immersion to cover flat portion of terminal only. B4 1037 2,000 cycles. See 4.5.6 herein. B5 1027 IZ= column 15 of table III herein for 96 hours, TA= +125C or adjusted, as required, to give an average lot TJ= +225C. Option 1

33、TJ= +200C, 336 hours. Option 2 TJ= +175C, 1,000 hours. B6 4081 RJC= 12C/W maximum, TA= +25C. For purposes of this test “junction to case“ shall be used in lieu of “junction to lead“ and “RJC“ shall be used in lieu of “RJL“. The case shall be the reference point for calculation of junction to case th

34、ermal resistance (RJC). The mounting arrangement shall be with heat sink to case. 4.4.2.2 Product quality levels JAN, JANTX and JANTXV (table EVIb of MILPRF19500). Subgroup Method Condition B2 4066 IZSM= column 10 of table III herein. B3 1027 IZ= column 15 of table III herein, adjust TA, mounting, o

35、r both, to achieve TC= 150C 5C. B3 1037 2,000 cycles. See 4.5.6 herein (separate samples may be used). B5 4081 RJC = 12C/W maximum; TA= +25C. For purposes of this test, “junction to case“ shall be used in lieu of “junction to lead“ and “RJC“ shall be used in lieu of “RJL“.The case shall be the refer

36、ence point for calculation of junction to case thermal resistance (RJC). The mounting arrangement shall be with heat sink to case. B6 1032 TA= +200C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/124L 6 4.4.3 Group C inspection. Group C

37、 inspection shall be conducted in accordance with the conditions specified for subgroup testing in table EVII of MILPRF19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table II herein. Subgroup Method Condition C2 2

38、036 Tension: Test condition A; 20 pounds; t = 15 3 s. C2 2036 Torque (terminal): Test condition D1; 10 inch-ounces; t = 15 3 s. C2 2036 Torque (stud): Test condition D2; 15 inch-pounds; t = 30 3 s. C2 2036 Bending stress: Test condition F; 3 pounds; t = 15 3 s, method B. C6 1027 IZ= column 15 of tab

39、le III herein, adjust TA, mounting, or both, to achieve TC= 150C 5C. C6 1037 6,000 cycles. See 4.5.6 herein (separate samples may be used). C8 4071 22 devices, c = 0, JAN, JANTX, and JANTXV levels only. Temperature coefficient of breakdown voltage (see 4.5.3 and 4.5.4). IZ= column 5 of table III her

40、ein, TA= +25C; T2= T1+ 100C; each sublot; Vz= percent/C column14 of table III herein. Voltage regulation (see 4.5.2) each sublot. Vz(reg)= V dc, column 9 of table III herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 Surge

41、current IZSM. The currents specified in column 10 of table III herein shall be applied in the reverse direction and shall be superimposed on the current (IZ= column 5 of table III herein) a total of five surges at 1-minute intervals. Each individual surge shall be a one-half square wave pulse of 1/1

42、20-second duration or an equivalent one-half sine wave with the same effective (rms) current. 4.5.2 Voltage regulation VZ(reg). A current at 10 percent of IZ(column 8 of table III herein) shall be maintained until thermal equilibrium is obtained, and the VZshall then be increased to a level of 50 pe

43、rcent of IZ(column 8 of table III herein) and maintained at this level for a period of time until thermal equilibrium is obtained at which time the voltage change shall not exceed column 9 of table III herein. During this test, the temperature shall be equal to TA= +25C. 4.5.3 Regulator voltage. The

44、 IZtest current (column 5 of table III herein) shall be applied until thermal equilibrium is obtained prior to reading the regulator voltage. During this test, the temperature shall be equal to TA= +25C 4.5.4 Temperature coefficient of regulator voltage (VZ). The device shall be temperature stabiliz

45、ed with current applied prior to reading regulator voltage at the specified case temperatures. 4.5.5 Inspection condition. Unless otherwise specified in MILPRF19500 or herein, all inspections shall be made at temperature shall be equal to TA= +25C. Provided by IHSNot for ResaleNo reproduction or net

46、working permitted without license from IHS-,-,-MILPRF19500/124L 7 4.5.6 DC intermittent operation life. A cycle shall consist of an “on“ period, when forward current is applied suddenly, not gradually, to the device for the time necessary to achieve an increase (delta) case temperature of +85C +15C,

47、 0C followed by an “off“ period, when the current is suddenly removed for cooling the case through a similar delta temperature. Auxiliary (forced) cooling is permitted during the “off“ period only. Forward current and “on“ time, within specific limits, and “off“ time may be adjusted to achieve the d

48、elta case temperature. Heat sinks shall only be used if, and to the degree necessary, to maintain test samples within the desired delta temperature tolerance. The heating time shall be such that 30 s theating 180 s. The forward current may be steady-state dc, full-wave rectified dc, or the equivalent half-sine wave dc, of the specified value. Alternately, IZmay be used to achieve heating. The test duration shall be the specified number of cycles. Within the time interval of 50 cycles before and 500 cycles after the termination of the test, the sampl