DLA MIL-PRF-19500 181 J-2011 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON LOW-POWER TYPES 2N718A 2N1613 AND 2N1613L JAN JANTX AND JANTXV.pdf

1、 INCH POUND MIL-PRF-19500/181J 16 February 2011 SUPERSEDING MIL-PRF-19500/181H 28 June 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N718A, 2N1613, AND 2N1613L, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments a

2、nd Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, low-power transistors. Three levels of produc

3、t assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, (similar to TO-18) and figure 2, (similar to TO-39 and TO-5). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type PT(1) PT(2) VCBOVCEOVEBOICVCERRJCRJA TJ and TC= +25C TA= +

4、25C RBE= 10 TSTG W W V dc V dc V dc mA dc V dc C/W C/W C 2N718A 1.8 0.5 75 30 7 500 50 97 325 -65 2N1613 3.0 0.8 75 30 7 500 50 58 175 to 2N1613L 3.0 0.8 75 30 7 500 50 58 175 +200 (1) Derate linearly at 17.2 mW/C for type 2N1613 and 2N1613L and at 10.3 mW/C for type 2N718A for TC +25C. (2) See figu

5、res 3 and 4. AMSC N/A FSC 5961 * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this

6、 address information using the ASSIST Online database at https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 16 April 2011. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro

7、m IHS-,-,-MIL-PRF-19500/181J 2 1.4 Primary electrical characteristics. Limits hFE1(1) hFE2(1) hFE3(1) hFE4(1) VCE(SAT)(1) |hFE| at 20 MHz VCE= 10 V dc VCE= 10 V dc VCE= 10 V dc VCE= 10 V dc IC= 150 mA dc VCE= 10 V dc IC= 0.1 mA dc IC= 10 mA dc IC= 150 mA dc IC= 500 mA dc IB= 15 mA dc IC= 50 mA dc f

8、= 20 MHz V dc Min 20 35 40 20 3 Max 120 1.5 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, and 5 of this specification. This section does not include documents cited in other sections of this specification or recommen

9、ded for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3, 4, and 5 of this specification, whether or not they are listed. 2.2 Gove

10、rnment documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT

11、OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil

12、or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this

13、document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devi

14、ces furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbo

15、ls, and definitions used herein shall be as specified in MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/181J 3 Symbol Inches Millimeters Notes Min Max Min Max CD .178 .195 4.52 4.95 CH .170 .210 4.32 5.33 HD .209 .230 5.

16、31 5.84 LC .100 TP 2.54 TP 5 LD .016 .021 0.41 0.53 8, 9 LL .500 .750 12.70 19.05 7, 9 LU .016 .019 0.41 0.48 4, 8, 9 L1 .050 1.27 9 L2 .250 6.35 9 TL .028 .048 0.71 1.22 5 TW .036 .046 .91 1.17 P .100 2.54 3 Q .030 0.76 6 r .010 .025 45 TP 45 TP NOTES: 1. Dimensions are in inches. 2. Millimeters ar

17、e given for general information only. 3. This zone is controlled for automatic handling. The variation in actual diameter within this zone shall not exceed .010 inch (0.254 mm). 4. (Three leads) LU applies between L1and L2. LD applies between L2and .5 inch (12.70 mm) from seating plane. Diameter is

18、uncontrolled in L1and beyond .5 inch (12.70 mm) from seating plane. 5. Measured from maximum diameter of the actual device. 6. Details of outline in this zone optional. 7. The collector shall be electrically connected to the case. 8. Lead number 1 - emitter; lead number 2 - base; lead number 3 - col

19、lector. 9. All three leads. 10. In accordance with ANSI Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions 2N718A (TO-18). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/181J 4 Symbol Dimensions Notes Inches

20、 Millimeter Min Max Min Max CH .240 .260 6.10 6.60 LC .200 TP 5.08 TP 7 LD .016 .021 0.41 0.53 8,9 LL See notes 12, and 13 LU .016 .019 0.41 0.48 8,9 L1 .050 1.27 8, 9 L2 .250 6.35 8, 9 HD .335 .370 8.51 9.40 CD .305 .335 7.75 8.51 P .100 2.54 6 Q .050 1.27 5 r .010 0.25 TL .029 .045 0.74 1.14 4 TW

21、.028 .034 0.71 0.86 0.71 45 TP 45 TP 7 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of 0.011 inch (0.28 mm). 4. TL measured from maximum HD. 5. Outline in this zone is not control

22、led. 6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.000 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at a maximum material conditi

23、on (MMC) relative to the tab at MMC. The device may be measured by direct methods or by the gauging procedure. 8. LU applies between L1and L2. LU applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 9. All three leads. 10. The collector shall be electrically and mec

24、hanically connected to the case. 11. r (radius) applies to both inside corners of tab. 12. For transistor types 2N1613, dimension LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm) maximum. 13. For transistor types 2N1613L, dimension LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches

25、(44.45 mm) maximum. 14. Lead number 1 - emitter; lead number 2 - base; lead number 3 - collector. FIGURE 2. Physical dimensions 2N1613 and 2N1613L (similar to TO-5 and TO-39). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/181J 5 3.4 I

26、nterface and physical dimensions. The design, construction and physical dimensions shall be as specified on figures 1 and 2 herein. 3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified

27、 in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirement

28、s. The electrical test requirements shall be the subgroups specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.

29、1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-1950

30、0 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in ta

31、ble II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/181J 6 4.3 Screening (JANTX and JANTX

32、V levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-P

33、RF-19500) JANTX and JANTXV levels (1) 3c Thermal impedance see 4.3.2 9 Not applicable 10 48 hours minimum 11 ICBO2, hFE312 See 4.3.1 13 Subgroup 2 of table I herein; ICBO2= 100 percent of initial value or 5 nA dc, whichever is greater; hFE3= +15 percent (1) Shall be performed anytime after temperatu

34、re cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB= 10 - 30 V dc. Power shall be applied to achieve TJ= +135C minimum using a minimum PD= 75 percent of PTmaximum rated as defined in 1.3. With

35、 approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and

36、performance history will be essential criteria for burn-in modification approval. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate

37、). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened

38、 devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table E-VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in acco

39、rdance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in 4.4.2.1 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN, J

40、ANTX, and JANTXV shall be after each step in 4.4.2.1 and shall be in accordance with table I, subgroup 2, and 4.5.2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/181J 7 * 4.4.2.1 Group B inspection, (JAN, JANTX, and JANTXV). S

41、eparate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall b

42、e scrapped. Step Method Condition 1 1026 Steady-state life: 1,000 hours minimum, VCB= 10 V dc, power shall be applied to achieve TJ= +150C minimum using a minimum of PD= 75 percent of maximum rated PTas defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time decreas

43、ed as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. * 2 1048 Blocking life, TA= 150C, VCB= 80 percent of rated voltage, without going over the maximum rated VCE, 48 hours minimum. n = 45 devices, c = 0. 3 1032 High-tem

44、perature life (non-operating), t = 340 hours, TA= +200C. n = 22, c = 0. 4.4.2.2 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from ea

45、ch wafer in the lot) from each wafer lot. See MIL-PRF-19500. b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life t

46、est (group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. * 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and 4.4.3.1 herein for group C testi

47、ng. Electrical measurements (end-points) and delta requirements shall be in accordance with table I, subgroup 2 herein. 4.4.3.1 Group C inspection, appendix E, table VII of MIL-PRF-19500. Subgroup Method Conditions C2 2036 Test condition E. C5 3131 RJAand RJConly, as applicable (see 1.3) and in acco

48、rdance with thermal impedance curves. * C6 Not applicable. * 4.4.4 Group E Inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall b

49、e in accordance with table I, subgroup 2 and 4.5.2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/181J 8 4.5 Method of inspection. Methods of inspection shall be as specified in appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurements shall be a