DLA MIL-PRF-19500 240 R-2009 SEMICONDUCTOR DEVICE DIODE SILICON RECTIFIER TYPES 1N645-1 1N647-1 1N649-1 1N645UR-1 1N647UR-1 1N649UR-1 JAN JANTX AND JANTXV.pdf

1、 MIL-PRF-19500/240R 13 August 2009 SUPERSEDING MIL-PRF-19500/240P 5 September 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N645-1, 1N647-1, 1N649-1, 1N645UR-1, 1N647UR-1, 1N649UR-1, JAN, JANTX, AND JANTXV 1/ This specification is approved for use by al

2、l Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for use as a general purpose silicon rectifier

3、diode or as a low speed switching rectifier diode. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (DO-35) and figure 2 (DO-213AA). * 1.3 Maximum ratings. Unless otherwise specified TC= 25C. Type (1) VRSMVRWMIO(

4、PCB) TA= +25C (2) IO TA= +150C IFSM tp= 1/120 s TA= +25C TJand TSTGBarometric pressure, reduced RJL L = .375 inch (9.53 mm) RJEC (UR) V (pk) V dc mA mA A C mm Hg C/W C/W 1N645-1, UR-1 270 225 400 150 5 -65 to +175 8 250 100 1N647-1, UR-1 480 400 400 150 5 -65 to +175 8 250 100 1N649-1, UR-1 720 600

5、400 150 5 -65 to +175 8 250 100 (1) Electrical characteristics for UR suffix devices are identical to the corresponding non-UR suffix devices unless otherwise specified. (2) Derate 2.0 mA/C between +25C to +150C. Derate 6 mA/C between +150C to +175C. 1/ See 6.2.2. AMSC N/A FSC 5961 INCH-POUND Commen

6、ts, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil . Since contact information can change, you may want to verify the currency of this address informati

7、on using the ASSIST Online database at http:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2009. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PR

8、F-19500/240R 2 1.4 Primary electrical characteristics at TA= +25C, unless otherwise specified. Type (1) VFat IF= 400 mA dc, 2 percent duty cycle, 8.3 ms max pulse width IRat TA= 25C IRat TA= 150C V dc (max) A dc (max) at VR A dc (max) at VR1N645-1 1.0 .05 225 V dc 50 225 V dc 1N647-1 1.0 .05 400 V d

9、c 50 400 V dc 1N649-1 1.0 .05 600 V dc 50 600 V dc (1) Electrical characteristics for UR suffix devices are identical to the corresponding non-UR suffix devices unless otherwise specified. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5

10、of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specif

11、ied requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified here

12、in. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. MIL-PRF-19500/587 - Semiconductor Device, Diode, Silicon, Rectifier, Types 1N6661, 1N6

13、662, 1N6663, 1N6661US, 1N6662US and 1N6663US, JAN, JANTX, JANTXV, AND JANS DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standard

14、ization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes prece

15、dence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/240R 3 Symbol Dimensions Notes Inches Millimeters Min Ma

16、x Min Max BD .055 .090 1.40 2.29 5 BL .120 .200 3.05 5.08 3 LD .018 .022 0.46 0.56 LL 1.000 1.500 25.40 38.10 LU .050 1.27 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The BL dimension shall include the entire body including slugs. 4. Dimension LU sha

17、ll include the sections of the lead over which the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. 5. The specified lead diameters apply in the zone between .050 (1.27 mm) from the diode body

18、 to the end of the lead. Outside of this zone the lead diameter shall not exceed the maximum dimension BD. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for types 1N645-1, 1N647-1, and 1N649-1 (DO-35). DO-35 Provided by IHSNot for ResaleNo

19、reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/240R 4 Symbol Dimensions Inches Millimeters Min Max Min Max BL .130 .146 3.30 3.71 BD .063 .067 1.60 1.70 ECT .016 .022 0.41 0.56 S .001 0.03 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general infor

20、mation only. 3. Dimensions are presolder dip. 4. Referencing dimension S, minimum clearance of glass body to mounting surface on all orientations. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions for types 1N645UR-1, 1N647UR-1, and 1N649UR-1(D

21、O-213AA). DO-213AA Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/240R 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished

22、under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols,

23、and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 (similar to DO-35), figure 2 (similar to DO-213AA) herein. 3.4.1 Lead finish. Lead finish shall be solde

24、rable in accordance with MIL-PRF-19500, MIL-STD-750, and herein (see 6.2). 3.4.2 Dash one construction. Dash one (-1) devices shall be metallurgically bonded double plug construction in accordance with the requirements of category I, II, or III (see MIL-PRF-19500). 3.5 Marking. Devices shall be mark

25、ed in accordance with MIL-PRF-19500. At the option of the manufacturer, the marking of the country of origin may be omitted from the body of the diode. 3.5.1 UR devices. For UR version devices only, all marking, except polarity, may be omitted from the body, but shall be retained on the initial cont

26、ainer. Polarity marking shall consist, as a minimum, a band or three contrasting dots spaced equally around the periphery of the cathode. 3.5.2 Marking of UR version devices. For UR version devices only, all marking (except polarity) may be omitted from the body, but shall be retained on the initial

27、 container. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I. 3.8 Workman

28、ship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as fol

29、lows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for q

30、ualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspect

31、ion lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/240R 6 4.3 Screening (JANTXV, JANTX levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified her

32、ein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANTXV and JANTX levels 3c Thermal impedance (see 4.3.1) 9 VF111 IR112 See 4.3.2 (1) 13 Subg

33、roup 2 of table I herein, IR1 100 percent of initial reading or 10 nA dc, whichever is greater. VF1 0.025 V dc change from initial reading (1) Thermal impedance need not be repeated at this step. 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

34、 3101 or 4081 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See group E, subgroup 4 of table II herein. The thermal impedance limit used in screen 3c and table I, subgroup 2 shall be set statist

35、ically by the supplier. 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.3): Method 1038 of MIL-STD-750, condition B. VR= rated VRWM; f = 50 - 60 Hz. TA= 35C maximum; IO(PCB)= 400 mA dc (min) or IF= 400 mA dc (min). The maximum current density of small die shall be su

36、bmitted to the qualifying activity for approval. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In ad

37、dition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. 4.3.3 JAN testing. JAN level product which is either category II or III shall have temperature cycling and thermal impedance testing performed in accordance with MIL-PRF

38、-19500, JANTX level screening level requirements. Electrical testing shall be in accordance with table I, subgroup 2 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Group A inspection shall be performed on each sublot. 4.4

39、.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein. 4.4.2 Group B inspection. Group B inspection shall be c

40、onducted in accordance with the conditions specified for subgroup testing in table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein. Provided by IHSNot

41、for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/240R 7 4.4.2.1 Group B inspection, table E-VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1056 0C to +100C, 10 cycles. B2 1051 -55C to +175C, 25 cycles. B3 1027 IO= 150 mA min, f

42、= 50 - 60 Hz, TJ= +150C min., supplier may adjust TAto obtain a minimum TJof +150C, (see 4.5.2). VR= 225 V(pk) for 1N645-1; VR= 400 V(pk) for 1N647-1; VR= 600 V(pk) for 1N649-1. B5 Not applicable. B6 1032 TA= +175C. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with t

43、he conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein. Subgroup Method Condition C2 1056 0C to +100C, 15 cycles. C2 1051 -55C to +1

44、75C, 20 cycles. C2 2036 Tension: Test condition A; weight = 10 pounds, t = 15 3 s. Lead fatigue: Test condition E. (Terminal strength not applicable to surface mount devices.) C5 4081 See 4.3.1. See 1.3 for thermal resistance values. C6 1026 IO= 150 mA, f = 50 - 60 Hz, TJ= +150C min., supplier may a

45、djust TAto obtain a minimum TJof +150C, (see 4.5.2). VR= 225 V(pk) for 1N645-1; VR= 400, V(pk) for 1N647-1; VR= 600 V(pk) for 1N649-1. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-IX of MIL-PRF

46、-19500 and as specified herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements.

47、 Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Steady-state operation life. A half-sine wave of the specified peak voltage shall be impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average rectified curr

48、ent. The forward conduction angle of the rectified current shall not be greater than 180 degrees nor less than 150 degrees. 4.5.3 Free air burn-in and life tests. The use of a current limiting or ballast resistor is permitted provided that each device under test still sees the full Pt (minimum) and

49、that the minimum applied voltage, where applicable, is maintained through-out the burn-in period. Alternate mounting conditions shall be submitted to the qualifying activity for approval. Method 3100 of MIL-STD-750 shall be used to measure TJ. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,