DLA MIL-PRF-19500 287 G-2008 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON SWITCHING TYPE 2N3013 JAN AND JANTX.pdf

1、 MIL-PRF-19500/287G 8 May 2008 SUPERSEDING MIL-PRF-19500/287F 19 July 2002 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, SWITCHING, TYPE 2N3013, JAN AND JANTX This specification is approved for use by all Departments and Agencies of the Department of Defense. * The r

2、equirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon switching transistors. Two levels of product assurance are provided for each device type as

3、specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-52). * 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Types PT(1) TA= +25C PT(2) TC= +25C VCBOVCEOICICRJARJCTSTGand TOP2N3013 W 0.36 W 1.2 V dc 40 V dc 20 V dc 5.0 mA dc 300 C/W 476 C/W 146 C -65 to +200 (1)

4、 Derate linearly, 2.10 mW/C for TA= 25C. (2) Derate linearly, 6.86 mW/C for TC= 25C. AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semicon

5、ductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 8 A

6、ugust 2008. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/287G 2Dimensions Symbol Inches Millimeters Note Min Max Min Max CD .178 .195 4.52 4.95 CH .170 .210 4.32 5.33 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 6 LD .016 .021 0.41 0.53

7、 7,8 LL .500 .750 12.7 19.05 7,8,13 LU .016 .019 0.41 0.48 7,8 L1.050 1.27 7,8 L2.250 6.35 7,8 P .100 2.54 Q .030 0.76 5 TL .028 .048 0.71 1.22 3,4 TW .036 .046 0.91 1.17 3 r .010 0.25 10 45 TP 45 TP 6 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyo

8、nd r (radius) maximum, TL shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 i

9、nch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. Dimension LU applies between L1and L2. Dimension LD applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. The collector shall be electrica

10、lly connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 12. Lead 1 = emitter, lead 2 = base, lead 3 = collector. FIGURE 1. Physical dimensions (similar to TO-52). Provided by IHSNot for Re

11、saleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/287G 31.4 Primary electrical characteristics at TA= +25C. tontoffLimit hFE1(1) VCE= 0.4 V dc IC= 30 mA dc VCE(sat)1(1) IC= 30 mA dc IB= 3.0 mA dc VBE(sat)2(1) IC= 30 mA dc IB= 3.0 mA dc IC= 300 mA dc IB1= 30 mA dc

12、 VCC= 15 V dc IC= 300 mA dc IB1= 30 mA dc IB2= 30 mA dc |hfe| VCE= 10 V dc IC= 30 mA dc f = 100 MHz Minimum Maximum 35 120 V dc 0.18 V dc 0.75 0.95 ns 15 ns 25 35 12 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5

13、 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all speci

14、fied requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified her

15、ein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices.

16、 (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the cont

17、ract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. Th

18、e individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufact

19、urers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500

20、/287G 43.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired,

21、it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Devices shall be marked in accordance with MIL-PRF-19500. At the option of the manufacturer, the marking of the country of origin may be omitted from the body of the transistor. 3.6 Electrical performance characteristics. Unle

22、ss otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a man

23、ner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (s

24、ee 4.3). c. Conformance inspection (see 4.4, and tables I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification

25、only. In case qualification was awarded to a prior revision of the associated specification that did not request the performance of table III tests, the tests specified in table III herein shall be performed by the first inspection lot of this revision to maintain qualification. * 4.3 Screening. Scr

26、eening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Measurement Screen (see table E-IV of MIL-PRF-19500) JANTX lev

27、els (1) 3 Thermal impedance, method 3131 of MIL-STD-750 9 Not applicable 11 ICES1and hFE112 See 4.3.1 13 Subgroup 2 of table I herein, ICES1= 100 percent of initial value or 50 nA dc, whichever is greater. hFE1= 20 percent of initial value. (1) Shall be performed anytime after temperature cycling, s

28、creen 3a; and does not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/287G 5* 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB= 10 - 30 V dc. Power shall be app

29、lied to achieve TJ= +135C minimum using a minimum PD= 75 percent of PTmaximum rated as defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used for JANTX quality levels. A justificati

30、on demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. * 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD

31、-750 using the guidelines in that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. * 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified her

32、ein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of subgroup 1 and 2, of table I herein, inspection only (table E-VIb, group B, subgroup 1 is not required to be performed since solderability

33、and resistance to solvents testing is performed in table I herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specifie

34、d in 4.4.2.1 for JAN and JANTX group B testing. Electrical measurements (end-points) and delta requirements for JAN and JANTX shall be after each step in 4.4.2.1 and shall be in accordance with table I, subgroup 2 and table II herein. * 4.4.2.1 Group B inspection, JAN and JANTX. Separate samples may

35、 be used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic failures during conformance inspection shall be analyzed to the extent possible to identify root cause and corrective action. Whenever a failure is identif

36、ied as wafer lot and wafer processing related, the entire wafer lot and related devices assembled from the wafer lot shall be rejected unless an appropriate determined corrective action to eliminate the failures mode has been implemented and the devices from the wafer lot are screened to eliminate t

37、he failure mode. Step Method Condition 1 1026 Steady-state life: 1,000 hours minimum, VCB= 10 dc, power and ambient shall be applied to achieve TJ= +150C minimum using a minimum of PD= 75 percent of maximum rated PTas defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the te

38、st time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. 2 1048 Blocking life, TA= +150C, VCB= 80 percent of rated voltage, 48 hours minimum. n = 45 devices, c = 0. 3 1032 High-temperature life (non-operating

39、), t = 340 hours, TA= +200C. n = 22, c = 0. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/287G 64.4.2.2 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN and JA

40、NTX, samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. See MIL-PRF-19500. b. Shall be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance inspection. When the final lead finish is so

41、lder or any plating prone to oxidation at high temperature, the samples for life test (group B for JAN and JANTX) may be pulled prior to the application of final lead finish. * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup te

42、sting in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. Subgroup Method Condition C2 1056 Thermal shock, test condition A. C2 2036 Terminal stre

43、ngth, test condition E. C5 3131 RJAand RJConly (see 1.3). C6 Not applicable. * 4.4.3.1 Group C sample selection. Samples for steps in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted t

44、o and passes table I tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.4.4 Group E qualification. Group E inspection shall be performed for qualification

45、 or re-qualification only. In case qualification was awarded to a prior revision of the associated specification that did not request the performance of table III tests, the tests specified in table III herein shall be performed by the first inspection lot of this revision to maintain qualification.

46、 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without

47、 license from IHS-,-,-MIL-PRF-19500/287G 7* TABLE I. Group A inspection. MIL-STD-750 Limits Inspection 1/ Method Conditions Symbol Min Max Unit Subgroup 1 2/ Visual and mechanical inspection 3/ 2071 n = 45 devices, c = 0 Solderability 3/ 4/ 2026 n = 15 leads, c = 0 Resistance to solvents 3/ 4/ 5/ 10

48、22 n = 15 devices, c = 0 Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Hermetic seal 4/ 6/ Fine leak Gross leak 1071 n = 22 devices, c = 0 Electrical measurements 4/ Table I, subgroup 2 Bond strength 3/ 4/ 2037 Precondition TA= +250C at t = 24 hours or TA= +300C at t = 2

49、 hours n = 11 wires, c = 0 Decap internal visual (design verification) 4/ 2075 n = 4 devices, c = 0 Subgroup 2 Breakdown to voltage, collector to base 3001 Bias condition D, IC= 100 A dc V(BR)CBO40 V dc Breakdown voltage, collector to emitter 3011 Bias condition D, IC= 10 mA dc pulsed (see 4.5.1) V(BR)CEO20 V dc Breakdown voltage, collector to emitter 3011 Bias condition C, I