DLA MIL-PRF-19500 291 U-2013 SEMICONDUCTOR DEVICE TRANSISTOR PNP SILICON SWITCHING TYPES 2N2906A 2N2906AL 2N2907A 2N2907AL 2N2906AUA 2N2907AUA 2N2906AUB 2N2906AUBC 2N2907AUB 2N29077.pdf

1、 MIL-PRF-19500/291U 16 February 2013 SUPERSEDING MIL-PRF-19500/291T 23 September 2011 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA, 2N2906AUB, 2N2906AUBC, 2N2907AUB, 2N2907AUBC, 2N2906AUB

2、N, 2N2906AUBCN, 2N2907AUBN, AND 2N2907AUBCN, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHC, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of D

3、efense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Five levels of product assurance are provided for each

4、encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance (RHA) level designators “M”, “D”, “P“, “L” “R”, “F, “G”, and “H” are appended to the device prefix to identify devices which have

5、passed RHA requirements. * 1.2 Physical dimensions. See figure 1 (similar to a TO-18), figure 2, (surface mount case outlines UA, figure 3 UB (metal lid, as shield, connected to fourth pad), UBC (ceramic lid, braze-ring connected to fourth pad), UBN (3-pin, isolated metal lid), and UBCN (3-pin, isol

6、ated ceramic lid) and figures 4, and 5 (JANHC and JANKC). 1.3 Maximum ratings. Unless otherwise specified TA= +25C.Types ICVCBOVEBOVCEOTJand TSTGAll devices mA dc 600 V dc 60 V dc 5 V dc 60 C -65 to +200 AMSC N/A FSC 5961 * Comments, suggestions, or questions on this document should be addressed to

7、DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil . INCH-POUND The documentation

8、 and process conversion measures necessary to comply with this document shall be completed by 16 May 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/291U 2 1.3 Maximum ratings. Unless otherwise specified TA= +25C. - Continued.Type

9、s PTPTPTPTRJA RJC RJSP(IS) RJSP(AM) TA= +25C (1) (2) TC= +25C (1) (2) TSP(IS)= +25C (1) (2) TSP(AM)= +25C (1) (2) (2) (3) (2) (3) (2) (3) (2) (3) W W W W C/W C/W C/W C/W 2N2906A, L, 2N2907A, L 0.5 0.5 1.0 1.0 N/A N/A N/A N/A 325 325 150 150 N/A N/A N/A N/A 2N2906AUA, 2N2907AUA (4) 0.5 (4) 0.5 N/A N/

10、A 1.0 1.0 1.5 1.5 (4) 325 (4) 325 N/A N/A 110 110 40 40 2N2906AUB, and UBN 2N2907AUB and UBN (4)0.5 (4) 0.5 N/A N/A 1.0 1.0 N/A N/A (4) 325 (4) 325 N/A N/A 90 90 N/A N/A 2N2906AUBC and UBCN 2N2907AUBC and UBCN (4) 0.5 (4) 0.5 N/A N/A 1.0 1.0 N/A N/A (4) 325 (4) 325 N/A N/A 90 90 N/A N/A (1) For dera

11、ting, see figures 6, 7, 8, 9, and 10. (2) See 3.3 for abbreviations. (3) For thermal curves, see figures 11, 12, 13, 14, and 15. (4) For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 6 and 11 for the UA, UB, UBC, UBN, and UBCN package and use RJA.

12、 1.4 Primary electrical characteristics. Unless otherwise specified TA= +25C. hFEat VCE= 10 V dc hFE1 IC= 0.1 mA dc hFE2 IC= 1.0 mA dc hFE3 IC= 10 mA dc hFE4(1) IC= 150 mA dc hFE5(1) IC= 500 mA dc 2N2906A, L, UA,UB, UBC, UBN, UBCN 2N2907A, L, UA,UB, , UBC, UBN, UBCN 2N2906A L, UA,UB, UBC, UBN, UBCN

13、2N2907A L, UA,UB, UBC, UBN, UBCN 2N2906A L, UA,UB, UBC, UBN, UBCN 2N2907A L, UA,UB, UBC, UBN, UBCN 2N2906A L, UA,UB, UBC, UBN, UBCN 2N2907A L, UA,UB, UBC, UBN, UBCN 2N2906A L, UA,UB, UBC, UBN, UBCN 2N2907A L, UA,UB, UBC, UBN, UBCN Min 40 75 40 100 40 100 40 100 40 50 Max 175 450 120 300 Switching (s

14、aturated) Types Limit |hfe| f = 100 MHz VCE= 20 V dc, IC= 20 mA dc Cobo 100 kHz f 1 MHz VCB= 10 V dc, IE= 0 ton See figure 16 toff See figure 17 2N2906A, 2N2907A, pF ns ns L, UA, UB, UBC, Min 2.0 UBN, UBCN Max 8 45 300 Types Limits VCE(sat)1(1) IC= 150 mA dc IB= 15 mA dc VCE(sat)2(1) IC= 500 mA dc I

15、B= 50 mA dc VBE(sat)1(1) IC= 150 mA dc IB= 15 mA dc VBE(sat)2(1) IC= 500 mA dc IB= 50 mA dc 2N2906A, 2N2907A, V dc V dc V dc V dc L, UA, UB, UBC Min 0.6 UBN, UBCN Max 0.4 1.6 1.3 2.6 (1) Pulsed see 4.5.1. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,

16、-,-MIL-PRF-19500/291U 3 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD,

17、CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. Dimension LU applies between L1and L2. Dimension LD applies between L2and

18、 LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 12. Lead 1 =

19、emitter, lead 2 = base, lead 3 = collector. 13. For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. FIGURE 1. Physical dimensions (similar to TO-18). Symbol Dimensions Notes Inches Millimeters Min Max Min Max CD .178 .195 4.52 4.95 CH .170 .210 4.32 5.33 H

20、D .209 .230 5.31 5.84 LC .100 TP 2.54 TP 6 LD .016 .021 0.41 0.53 7,8 LL .500 .750 12.70 19.05 7,8,13 LU .016 .019 0.41 0.48 7,8 L1.050 1.27 7,8 L2.250 6.35 7,8 P .100 2.54 Q .030 0.76 5 TL .028 .048 0.71 1.22 3,4 TW .036 .046 0.91 1.17 3 r .010 0.25 10 45 TP 45 TP 6 Provided by IHSNot for ResaleNo

21、reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/291U 4 Dimensions Note Symbol Inches Millimeters Min Max Min Max BL .215 .225 5.46 5.71 BL2.225 5.71 BW .145 .155 3.68 3.93 BW2.155 3.93 CH .061 .075 1.55 1.90 3 L3.003 0.08 5 LH .029 .042 0.74 1.07 LL1.032 .048 0.81 1.2

22、2 LL2.072 .088 1.83 2.23 LS .045 .055 1.14 1.39 LW .022 .028 0.56 0.71 LW2.006 .022 0.15 0.56 5 Pin no. 1 2 3 4 Transistor Collector Emitter Base N/C NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension “CH“ controls the overall package thickness. W

23、hen a window lid is used, dimension “CH“ must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). 4. The corner shape (square, notch, radius) may vary at the manufacturers option, from that shown on the drawing. 5. Dimensions “LW2“ minimum and “L3“ minimum and the ap

24、propriate castellation length define an unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation was designed. (Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension “LW2“ maximum and “L3“ maximum define the maximum width

25、and depth of the castellation at any point on its surface. Measurement of these dimensions may be made prior to solder dipping. 6. The coplanarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15 mm) for solder dipped leadless chip ca

26、rriers. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2. Physical dimensions, surface mount (UA version). UA * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/291U 5 * FIGURE 3. Physical dimensions

27、, surface mount (UB, UBN, UBC, and UBCN versions). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/291U 6 Dimensions Symbol Inches Millimeters Note Min Max Min Max BL .115 .128 2.92 3.25 BW .095 .108 2.41 2.74 BH .046 .056 1.17 1.42 UB

28、only, 4 BH .046 .056 1.17 1.42 UBN only, 5 BH .055 .069 1.40 1.75 UBC only, 6 BH .055 .069 1.40 1.75 UBCN only, 7 CL .128 3.25 CW .108 2.74 LL1 .022 .038 0.56 0.97 3 PLS LL2 .014 .035 0.356 0.89 3 PLS LS1.035 .040 0.89 1.02 LS2.071 .079 1.80 2.01 LW .016 .024 0.41 0.61 r .008 0.20 6 r1 .012 0.30 8 r

29、2 .022 0.56 UB hFE4; ICBO2= 100 percent of initial value or 5 nA dc, whichever is greater. hFE4= 15 percent ICBO2, hFE412 See 4.3.2 See 4.3.2 (2) 13 Subgroups 2 and 3 of table I herein; ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater; hFE4= 15 percent Subgroup 2 of table I here

30、in; ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater; hFE4= 15 percent 15 Required Not required 16 Required Not required (1) Shall be performed anytime after temperature cycling, screen 3a; TX and TXV do not need to be repeated in screening requirements. (2) PDA = 5 percent for

31、screen 13, applies to ICBO2, hFE4, ICBO2, and hFE4. Thermal impedance (ZJX) is not required in screen 13. 4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance“. Burn-in duration for the JANKC le

32、vel follows JANS requirements; the JANHC follows JANTX requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/291U 12 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB= 10 - 30 V dc. Power shall be appl

33、ied to achieve TJ= +135C minimum using a minimum PD= 75 percent of PTmaximum, TAambient rated as defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) for JANTX and JANTXV quality levels may b

34、e used. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. 4.3.3 Thermal impedance measurements). The thermal impedance measurements shall be performed in accor

35、dance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and tMD(and VCwhere appropriate). The thermal impedance limit used in screen 3c of 4.3 herein and subgroup 2 of table I shall comply with the thermal impedance graphs in figures 12, 13, 14, 15, and

36、16 (less than or equal to the curve value at the same tHtime) and shall be less than the process determined statisticalmaximum limit as outlined in method 3131. See table III, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as spec

37、ified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of subgroups 1 and 2, of table I herein, inspection only (table E-VIb, group B, subgroup 1 is not required to be performed again if g

38、roup B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup

39、testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points) and delta requirements shall be in accordance with table I, subgroup 2 and 4.5.3 herein. See 4.4.2.2 herein for JAN, JANTX, and JANTXV, group B testing. Electrical measurements (end-points) and de

40、lta requirements for JAN, JANTX, and JANTXV, shall be after each step in 4.4.2.2 and shall be in accordance with table I, subgroup 2 and 4.5.3 herein. 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB= 10 - 30 V dc. Adjust device current, or power

41、, to achieve a minimum TJof 100C. B5 1027 VCB= 10 V dc; PD 100 percent of maximum rated PT(see 1.3). (NOTE: If a failure occurs, resubmission shall be at the test conditions of the original sample.) Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500, table E-VIa, adjust TAor PDt

42、o achieve TJ= +275C minimum. Option 2: 216 hours minimum, sample size = 45, c = 0; adjusted TAor PDto achieve a TJ= +225C minimum. B6 3131 RJA, RJConly (see 1.3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/291U 13 4.4.2.2 Group B i

43、nspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic failures during conformance inspection shall be analyzed to the extent possible to identify root c

44、ause and corrective action. Whenever a failure is identified as wafer lot and wafer processing related, the entire wafer lot and related devices assembled from the wafer lot shall be rejected unless an appropriate determined corrective action to eliminate the failures mode has been implemented and t

45、he devices from the wafer lot are screened to eliminate the failure mode. Step Method Condition 1 1026 Steady-state life: 1,000 hours minimum, VCB= 10 dc, power and ambient shall be applied to achieve TJ= +150C minimum using a minimum of PD= 75 percent of maximum rated PTas defined in 1.3. n = 45 de

46、vices, c = 0. The sample size may be increased and the test time decreased so long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. 2 1048 Blocking life, TA= +150C, VCB= 80 percent of rated voltage, 48 hours minimum. n = 45 de

47、vices, c = 0. 3 1032 High-temperature life (non-operating),t = 340 hours, TA= +200C. n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX,and JANTXV samples shall be selected randomly from a minimum

48、of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2, conformance inspection. When the final lead finis

49、h is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified fo