DLA MIL-PRF-19500 315 G-2011 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPES 2N2880 2N3749 JAN JANTX JANTXV AND JANS.pdf

1、 MIL-PRF-19500/315G 14 September 2011 SUPERSEDING MIL-PRF-19500/315F 30 June 1999 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N2880, 2N3749, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Depart- ments and Agencies of the

2、 Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Four levels of product assurance are prov

3、ided for each device type as specified in MIL-PRF-19500. * 1.2 Physical dimensions. Type 2N2880, see figure 1 (TO-59), for type 2N3749, see figure 2 (TO-111). * 1.3 Maximum ratings. PT(1) TA= 25C PT(2) TC= 100C VCBOVCEOVEBOICIBTSTGand TOPW 2 W 30 V dc 110 V dc 80 V dc 8 A dc 5 A dc 0.5 C -65 to +200

4、 (1) Derate linearly 11.4 mW/C for TA 25C. * (2) Derate linearly 300 mW/C for TC 100C, see figure 3. 1.4 Primary electrical characteristics at TC= 25C. Limits hFE3(1) VCE= 5 V dc IC= 5 A dc hFE2(1) VCE= 2 V dc IC= 1 A dc |hfe| VCE= 10 V dc IC= 1 A dc f = 10 MHz VBE(sat)(1) IC= 1 A dc IB= 100 mA dc V

5、CE(sat)(1) IC= 1 A dc IB= 100 mA dc CoboVCB= 10 V dc IE= 0 100 kHz f 1 MHzRJCMin Max 15 - 40 120 3 12 V dc 1.2 V dc 0.25 pF 150 C/W 3.33 (1) Pulsed (see 4.5.1). AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC

6、, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . The documentation and process conversion measures neces

7、sary to comply with this document shall be completed by 14 December 2011. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/315G 2 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4,

8、 or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all

9、specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. * 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent spec

10、ified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor

11、 Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein

12、 or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSN

13、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/315G 3 FIGURE 1. Physical dimensions of transistor type 2N2880 (TO-59). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/315G 4 Symbol Dimens

14、ion Notes Inches MillimetersMin Max Min MaxCH .320 .468 8.13 11.89HT 250 6.35CD .318 .380 8.08 9.65CD1.380 .437 9.65 11.10 HF .423 .438 10.74 11.13E .125 .165 3.18 4.19 5, 8, 9e1.110 .145 2.79 3.68 5, 8 A1 .090 .150 2.29 3.81 OAH .570 .763 14.48 19.38 4UD .155 .189 3.94 4.80SL .400 .455 10.16 11.56S

15、U .078 - 1.98 10T .040 .065 1.02 1.65 T1.040 .070 1.02 1.78 SD 0.190-32UNF-2A 4PS1 .090 .110 2.29 2.79 5, 8, 9 PS.185 .215 4.70 5.46 5, 8, 9NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Collector shall be electrically connected to the case. This termin

16、al may be flattened and pierced only when the 90 degree option is used. 4. SD is the outer diameter of coated threads. (Reference: Screw thread standards for Federal Standard H28/1 , (FED-STD-H28/1). 5. The orientation of the terminals in relation to the hex flats is not controlled. 6. All three ter

17、minals. 7. The case temperature may be measured anywhere on the seating plane within .125 (3.18 mm) of the stud. 8. Terminal spacing measured at the base seat only. 9. Dimensions e, e1, PS1, and PS are measured from the center line of terminals. 10. Maximum unthreaded dimension. 11. This dimension a

18、pplies to the location of the center line of the terminals. 12. A 90 degeee angle lead orientation as shown may be used at the option of the manufacturer. All dimensions of the basic outline except e, e1, and the 120 degree lead angle apply to this option. 13. Terminal -1, emitter; terminal -2, base

19、; terminal -3, collector. 14. A slight chamfer or undercut on one, or both, ends of the hexagonal is optional. FIGURE 1. Physical dimensions of transistor type 2N2880 (TO-59) - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/

20、315G 5 * FIGURE 2. Physical dimensions of transistor type 2N3749 (TO-111). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/315G 6 Symbol Dimension Notes Inches MillimetersMin Max Min MaxCH .320 .458 8.13 11.63HT .250 6.35 5E .505 12.83C

21、D .318 .380 8.08 9.65CD1.380 .437 9.65 11.10 5 HF .423 .438 10.74 11.13e1.180 .215 4.57 5.46 7 E .080 .110 2.03 2.79 7A1.090 .150 2.29 3.81 4, 8 OAH .570 .763 14.48 19.38SL .400 .455 10.16 11.56SU .078 1.98 9T .040 .065 1.02 1.65 T1.040 .070 1.02 1.78 6 SD 0.190-32UNF-2A 10Z .002 0.05Z1 .006 0.15 NO

22、TES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Terminal 1 - emitter; terminal 2 - base; terminal 3 - collector; terminal 4 - case. 4. Chamfer or undercut on one, or both, ends of hexagonal portion is optional. 5. The outline contour, with the exception of

23、 the hexagon, is optional within cylinder defined by CD1and HT. 6. Terminal 4 can be flattened and pierced or hook type. A visual index is required when the flattened and pierced tab terminal contour (identical to the adjacent terminals) option is used. 7. Angular orientation of terminals with respe

24、ct to hexagon is optional. 8. A1dimension does not include sealing flanges. 9. SU is the length of incomplete or undercut threads. 10. SD is the outer diameter of coated threads. (Reference: Screw thread standards for Federal Standard H28/1 , (FED-STD-H28/1). * FIGURE 2. Physical dimensions of trans

25、istor type 2N3749 (TO-111) - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/315G 7 3. REQUIREMENTS * 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. * 3.2 Qualific

26、ation. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviat

27、ions, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. * 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500 and figure 1, 2N2880 (TO-59), and figure 2, 2N3749 (TO-111). * 3.4.1 Lead finish. Lead finish shall be

28、solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise sp

29、ecified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. * 3.8 Workmanship. Semiconductor devices shall be processed in such a ma

30、nner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4.VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (s

31、ee 4.3) c. Conformance inspection (see 4.4). * 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualificat

32、ion was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provi

33、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/315G 8 * 4.3 Screening (JANS, JANTX, and JANTXV). Screening shall be in accordance with table E-IVb of MIL-PRF-19500 (JANS, JANTX, and JANTXV), and as specified herein. The following measuremen

34、ts shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1) 3c Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.1) Thermal impedance, me

35、thod 3131 of MIL-STD-750 (see 4.3.1) 9 ICBO1and hFE2ICBO111 ICBO1and hFE2; ICBO1= 100 percent of initial reading or 50 nA dc, whichever is greater; hFE2= +15 percent, -10 percent ICBO1and hFE2ICBO1= 100 percent of initial reading or 100 nA dc, whichever is greater. 12 See 4.3.2 See 4.3.2 13(a) Subgr

36、oups 2 and 3 of table I herein; ICBO1= 100 percent of initial value or 50 nA dc, whichever is greater; hFE2= +15 percent, -10 percent Subgroup 2 of table I herein ICBO1= 100 percent of initial value or 100 nA dc, whichever is greater; hFE2= +20 percent, -10 percent 13(b) (2N3749 only) Method 1016 of

37、 MIL-STD-750, insulation resistance test condition B (short connector, emitter, and base terminals together) RISO= 109ohms (min) Method 1016 of MIL-STD-750 insulation resistance test condition B (short connector, emitter, and base terminals together) RISO= 109ohms (min) * (1) Shall be performed anyt

38、ime after temperature cycling, screen 3a; TX and TXV levels do not need to be repeated in screening requirements. * 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH,

39、 tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.3.2 Power burn-in conditions. Power burn-in conditions (all levels) are as follows: a. TJ= 187.5 12.5C. b. TA 100C. c. VCE= 25 5 V dc. 4.4 Conformance inspection. Conformance ins

40、pection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. (End-point electrical measurements shall be in accordance with table I, subgroup 2 herein.) Provided by IH

41、SNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/315G 9 * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIa (JANS) and E-VIb (JAN, JANTX, and JANTXV) of MIL-

42、PRF-19500 and 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table III herein. * 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037

43、 VCE 5 V dc; TA= 25 3C, 2,000 cycles. B5 1027 VCE 5 V dc; 96 hours. PT= 2 W at TA= 100C or adjusted as required by the chosen TA to give an average lot TJ= 275C. Marking legibility requirements shall not apply. B6 3131 See 4.5.2. * B7 3053 Load condition C; 22 devices; c = 0 (unclamped inductive loa

44、d) (see figure 4). TA= 25C; duty cycle 10 percent; RS= 0.1 ; Tp= 640 s. Test 1, RBB1= 39 ; VBB1= 20 V dc; RBB2= ; VBB2= 0; VCC= 15 V dc; IC= 5 A dc; L = 1 mH; (0.5 , 5 A dc) (Tower #7870 or equivalent). Test 2, TP= 2.88 ms; RBB1= 120 ; VBB1= 20 V dc; RBB2= ; VBB= 0; VCC= 15 V dc; IC= 1.6 A dc; L = 1

45、0 mH; (0.11 , 12.5 A dc) (Stancor C-2688 or equivalent). * B7 3053 See figures 5 and 6 (clamped inductive load). TA= 25C; IB= 0.5 A dc; IC= 5 A dc; VCC= 55 V dc. * 4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1027 TJ= 187.5 12.5C; TA

46、35C; VCE= 25 5 V dc. B5 3131 See 4.5.2. * B7 3053 Load condition C; 22 devices; c = 0 (unclamped inductive load) (see figure 3). TA= 25C; duty cycle 10 percent; RS= 0.1 . Test 1, Tp= 640 s, RBB1= 39 ; VBB1= 20 V dc; RBB2= ; VBB2= 0; VCC= 15 V dc; IC= 5 A dc; L = 1 mH; (0.5 0, 5 A dc) (Tower #7870 or

47、 equivalent). Test 2, TP= 2.88 ms; RBB1= 120 ; VBB1= 20 V dc;RBB2= ; VBB= 0; VCC= 15 V dc; IC= 1.6 A dc; L = 10 mH; (0.11 , 12.5 A dc) (Stancor C-2688 or equivalent). * B7 3053 See 4 and 5, (clamped inductive load). TA= 25C; IB= 0.5 A dc; IC= 5 A dc; VCC= 55 V dc. Provided by IHSNot for ResaleNo rep

48、roduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/315G 10 * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table III herein. Subgroup Method Condition * C2 2036 Test condition A; weight= 10 pounds; time = 15 s. C2 2036 Thermal strength (terminal torque). Test cond